BSNL TTA (JE) ELECTRONICS DEVICES AND CIRCUITS 200

EXPECTED QUESTIONS (WWW.ALLEXAMREVIEW.COM) PART

ONE
ANSWER KEY-Correct answer is indicated by symbol (V) in options.
HINTS-In some questions options E-HINTS is indicating the hints of answer.

1) A silicon diode measures a low value of resistance with the meter leads in both
positions. The trouble, if any, is
A [ ]) the diode is open.
B [ ]) the diode is shorted to ground.
C [v]) the diode is internally shorted.
D [ ]) the diode is working correctly.

2) For a forward-biased diode, the barrier potential ________ as temperature increases.

A [v]) decreases
B [ ]) remains constant
C [ ]) increases
D [v]) None of above

3) The wide end arrow on a schematic indicates the ________ of a diode.

A [ ]) ground
B [ ]) direction of electron flow
C [ ]) cathode
D [v]) anode

4) An n-type semiconductor material

A [ ]) is intrinsic.
B [ ]) has trivalent impurity atoms added.
C [v]) has pentavalent impurity atoms added.
D [ ]) requires no doping.

5) For a forward-biased diode, as temperature is ________, the forward current ________

for a given value of forward voltage.
A [ ]) decreased, increases
B [v]) increased, increases

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 C [ ]) increased, decreases
D [ ]) decreased, decreases

6) Which statement best describes an insulator?

A [ ]) A material with many free electrons.
B [ ]) A material doped to have some free electrons.
C [v]) A material with few free electrons.
D [ ]) none of these

7) An ideal diode presents a(n) ________ when reversed-biased and a(n) ________ when
forward-biased.
A [v]) open, short
B [ ]) short, open
C [ ]) open, open
D [ ]) short, short

8) A reverse-biased diode has the ________ connected to the positive side of the source,
and the ________ connected to the negative side of the source.
A [v]) cathode, anode
B [ ]) cathode, base
C [ ]) base, anode
D [ ]) anode, cathode

9) What types of impurity atoms are added to increase the number of conduction-band
electrons in intrinsic silicon?
A [ ]) bivalent
B [v]) pentavalent
C [ ]) trivalent
D [ ]) none of these

10) What factor(s) do(es) the barrier potential of a pn junction depend on?

A [ ]) type of semiconductive material

B [ ]) the amount of doping

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 C [ ]) the temperature
D [v]) all of the above

11) Reverse breakdown is a condition in which a diode

A [v]) is subjected to a large reverse voltage
B [ ]) is reverse-biased and there is a small leakage current.
C [ ]) has no current flowing at all.
D [ ]) is heated up by large amounts of current in the forward direction.

12) There is a small amount of current across the barrier of a reverse-biased diode. This
current is called
A [ ]) forward-bias current.
B [ ]) reverse breakdown current.
C [ ]) conventional current.
D [v]) reverse leakage current

13) As the forward current through a silicon diode increases, the voltage across the diode
A [ ]) increases to a 0.7 V maximum.
B [ ]) decreases.
C [v]) is relatively constant.
D [ ]) decreases and then increases.

14) Doping of a semiconductor material means

A [ ]) Doping of a semiconductor material means
B [ ]) that impurities are added to increase the resistance of the material.
C [v]) that impurities are added to decrease the resistance of the material
D [ ]) that all impurities are removed to get pure silicon.

15) The forward voltage across a conducting silicon diode is about

A [ ]) 0.3 V.
B [ ]) 1.7 V.
C [ ]) -0.7 V.
D [v]) 0.7 V.

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16) The most common type of diode failure is a(n) ________.
A [v]) open
B [ ]) short
C [ ]) resistive
D [ ]) all of these

17) What occurs when a conduction-band electron loses energy and falls back into a hole
in the valence band?
A [ ]) doping
B [v]) recombination
C [ ]) generation
D [ ]) diffusion

18) A silicon diode is forward-biased. You measure the voltage to ground from the anode at
________, and the voltage from the cathode to ground at ________.
A [ ]) 0 V, 0.3 V
B [v]) 2.3 V, 1.6 V
C [ ]) 1.6 V, 2.3 V
D [ ]) 0.3 V, 0 V

19) The term bias in electronics usually means

A [ ]) the value of ac voltage in the signal.
B [ ]) the condition of current through a pn junction
C [v]) the value of dc voltages for the device to operate properly.
D [ ]) the status of the diode.

20) Which capacitance dominates in the reverse-bias region?

A [v]) depletion
B [ ]) conversion
C [ ]) Diffusion
D [ ]) None of the above

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21) How many orbiting electrons does the germanium atom have?
A [ ]) 4
B [ ]) 14
C [v]) 32
D [ ]) 41

22) What unit is used to represent the level of a diode forward current IF?
A [ ]) pA
B [ ]) nA
C [v]) mA
D [ ]) A

23) The diffused impurities with ________ valence electrons are called donor atoms.
A [v]) 5
B [ ]) 4
C [ ]) 3
D [ ]) 0

24) What is the range of the operating voltage level for LEDs?
A [ ]) 5-12 mV
B [v]) 1.7-3.3 V
C [ ]) 5-12 V
D [ ]) 20-25 V

25) At what kind of operating frequency diffusion or transition is a capacitor represented in

parallel with the ideal diode?
A [ ]) Low frequency
B [ ]) Moderate frequency
C [ ]) Mid frequency
D [v]) Very high frequency

26) Which of the following devices can check the condition of a semiconductor diode?
A [ ]) Digital display meter (DDM)

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 B [ ]) Multimeter
C [ ]) Curve tracer
D [v]) All of the above

27) How many valence electrons does a silicon atom have?

A [ ]) 2
B [v]) 4
C [ ]) 6
D [ ]) 8

28) Calculate the power dissipation of a diode having ID = 40 mA.

A [v]) 28mW
B [ ]) 28W
C [ ]) 280mW
D [ ]) Undefined
E [ ]) HINTS-By default take it Si diode then V=0.7 Given I=40 mA Then
power=VI=0.7*40=28mW
NOTE-IF Ge diode then take V=0.3

29) Which of the following elements is most frequently used for doping pure Ge or Si?
A [ ]) Boron
B [ ]) Gallium
C [ ]) Indium
D [v]) All of the above

30) Which of the following ratings is true?

A [ ]) Si diodes have higher PIV and narrower temperature ranges than Ge diodes.
B [v]) Si diodes have higher PIV and narrower temperature ranges than Ge diodes.
C [ ]) Si diodes have lower PIV and narrower temperature ranges than Ge diodes.
D [ ]) Si diodes have lower PIV and wider temperature ranges than Ge diodes.

31) In what state is a silicon diode if the voltage drop across it is about 0.7 V?
A [ ]) No bias

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 B [v]) Forward bias
C [ ]) Reverse bias
D [ ]) Zener region

32) Schottky diodes are also known as

A [ ]) PIN diodes.
B [v]) hot carrier diodes.
C [ ]) step-recovery diodes.
D [ ]) tunnel diodes.

33) Zener diodes with breakdown voltages less than 5 V operate predominantly in what
type of breakdown?
A [ ]) avalanche
B [v]) zener
C [ ]) varactor
D [ ]) Schottky

34) The Schottky diode is used

A [ ]) in high-power circuits.
B [ ]) in circuits requiring negative resistance.
C [v]) in very fast-switching circuits.
D [ ]) in power supply rectifiers.

35) You have an application for a diode to be used in a tuning circuit. A type of diode to use
might be
A [ ]) an LED.
B [ ]) a Schottky diode.
C [ ]) a Gunn diode.
D [v]) a varactor

36) What kind of diode is formed by joining a doped semiconductor region with a metal?
A [ ]) laser
B [ ]) tunnel

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 C [ ]) pin
D [v]) Schottky

37) Which diode employs graded doping?

A [ ]) zener
B [ ]) LED
C [ ]) tunnel
D [v]) step-recovery

38) LEDs are made out of

A [ ]) silicon.
B [ ]) germanium.
C [v]) gallium.
D [ ]) silicon and germanium, but not gallium.

39) The normal operating region for a zener diode is the

A [ ]) forward-bias region.
B [ ]) reverse-bias region.
C [ ]) zero-crossing region.
D [v]) reverse-breakdown region.

40) An 8.2 V zener has a resistance of 5. The actual voltage across its terminals when the
current is 25 mA is
A [ ]) 8.2 V.
B [ ]) 125 mV.
C [v]) 8.325 V.
D [ ]) 8.075 V.
E [ ]) HINTS-Voltage drop across zener diode=5*25=125mV=0.125V Now total terminal
voltage=8.2+0.125=8.125

41) What diode is used in seven-segment displays?

A [ ]) zener
B [v]) LED

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 C [ ]) laser
D [ ]) Schottky

42) Zener diodes with breakdown voltages greater than 5 V operate predominantly in what
type of breakdown?
A [v]) avalanche
B [ ]) zener
C [ ]) varactor
D [ ]) Schottky

43) Back-to-back varactor diodes are used for what reason?

A [ ]) over-voltage protection
B [ ]) a wider tuning range
C [v]) to eliminate harmonic distortion
D [ ]) no reason; only zeners are used in a back-to-back configuration

44) A tunnel diode is used

A [ ]) in high-power circuits.
B [v]) in circuits requiring negative resistance
C [ ]) in power supply rectifiers
D [ ]) in very fast-switching circuits.

45) A laser diode normally emits

A [ ]) coherent light.
B [ ]) monochromatic light.
C [v]) coherent and monochromatic light.
D [ ]) neither coherent nor monochromatic light.

46) A varactor is a pn junction diode that always operates in ________-bias and is doped to
________ the inherent capacitance of the depletion region.
A [ ]) forward, maximize
B [v]) reverse, maximize
C [ ]) reverse, minimize

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 D [ ]) forward, minimize

47) What type of diode circuit is used to clip off portions of signal voltages above or below
certain levels?
A [v]) clipper or limiter
B [ ]) clamper
C [ ]) IC voltage regulator
D [ ]) none of the above

48) Each diode in a center-tapped full-wave rectifier is ________ -biased and conducts for
________ of the input cycle.
A [ ]) forward, 90º
B [ ]) reverse, 180º
C [v]) forward, 180º
D [ ]) reverse, 90º

49) The output frequency of a full-wave rectifier is ________ the input frequency.
A [ ]) one-half
B [ ]) equal to
C [v]) twice
D [ ]) one-quarter

50) What type of diode circuit is used to add or restore a dc level to an electrical signal?
A [ ]) clipper or limiter
B [v]) clamper
C [ ]) IC voltage regulator
D [ ]) none of the above

51) Electrons in p-type material of a semi-conductor are called as

A [ ]) either minority carriers or majority carriers
B [v]) minority carriers
C [ ]) majority carriers
D [ ]) valance carriers

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52) Depletion region of a p-n junction is formed
A [ ]) During Reverse bias
B [ ]) During Forward bias
C [v]) During Manufacturing
D [ ]) During Heating

53) A 555 IC is used to produce

A [ ]) counter
B [ ]) register
C [v]) clock
D [ ]) byte

54) Example of donor atom is

A [ ]) Germinium
B [ ]) Silicon
C [ ]) Both A and B
D [v]) Antimony

55) Donors to a semiconductor material is

A [v]) Pentavalant
B [ ]) Trivalant
C [ ]) Divalant
D [ ]) Tetravalant

56) Acceptors impurities are of ________ material

A [ ]) n-type
B [v]) p-type
C [ ]) solid
D [ ]) Both A and B

57) The majority carriers in the emitter of a PNP transistor are

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 A [v]) holes.
B [ ]) free electrons.
C [ ]) trivalent atoms.
D [ ]) pentavalent atoms.

58) Darlington connection is achieved in 2 transistors by connecting

A [ ]) both emitter.
B [v]) both collector.
C [ ]) both base.
D [ ]) grounding both collector.

59) The current gain of a pnp transistor is

A [ ]) the negative of the npn current gain.
B [ ]) the collector current divided by the emitter current.
C [ ]) near zero.
D [v]) the ratio of collector current to emitter current.

60) Which material behave like perfect insulators at low temperatures & conductor at
higher temperature ?
A [ ]) Si
B [ ]) Ge
C [ ]) GaAs
D [v]) All the above

61) What is the charge of mobile charge carriers of holes ?

A [ ]) Negatively charged
B [ ]) No charged
C [v]) Positively charged
D [ ]) None of the above

62) Diode is also called as:

A [ ]) Amplifier
B [v]) Rectifier

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 C [ ]) Resistance
D [ ]) Reactance

63) Which is the third region where no charge carriers are present when n-type and p-type
are attached together ?
A [ ]) Forward region
B [v]) Depletion region
C [ ]) Reversed region
D [ ]) None of the above

64) What will be the Potential barrier for Ge Diode ?

A [ ]) 0.7V
B [v]) 0.3V
C [ ]) 0.5V
D [ ]) 0.03V

65) When will be the P-N junction is formed ?

A [ ]) In reverse biased region
B [ ]) In depletion region
C [v]) Two opposite doped materials
D [ ]) None of the above

66) If temperature increases then conductivity of a semiconductor is ...................

A [ ]) Decreases
B [v]) Increases
C [ ]) Constant
D [ ]) None of the above

67) What is an energy gap?

A [ ]) Energy band in which electrons can move freely
B [ ]) Energy level at which an electron can exist
C [v]) Space between two orbital shells
D [ ]) None of the above

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68) What is the range of energy band gap of semiconductors ?
A [v]) 1-3 ev
B [ ]) 0 ev
C [ ]) 10-15 ev
D [ ]) 14-15 ev

69) Which impurity is added into semiconductor to increase its conductivity ?

A [v]) extrinsic
B [ ]) intrinsic
C [ ]) doping
D [ ]) None of the above

70) What will be the result if pentavalent impurity is added to pure germanium or silicon ?
A [v]) N-type semiconductor
B [ ]) Intrinsic semiconductor
C [ ]) P-type semiconductor
D [ ]) None of the above

71) Which of the following is the pentavalent material ?

A [ ]) Boron
B [ ]) Neon
C [v]) Arsenic
D [ ]) Gallium

72) How will be the extrinsic semiconductor act at room temperature ?

A [v]) Poor conductor
B [ ]) Medium Conductor
C [ ]) Conductor
D [ ]) None of the above

73) Which of the following is trivalent impurity ?

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 A [ ]) Antimony
B [ ]) Silicon
C [v]) Boron
D [ ]) None of the above

74) What will happen if doping of an intrinsic semiconductor with pentavalent impurity
atom ?
A [ ]) Fermi level not change
B [ ]) Fermi level fall
C [v]) Fermi level raises
D [ ]) None of the above

75) Germanium has

A [ ]) ionic bond.
B [v]) covalent bond.
C [ ]) molecular bond.
D [ ]) metallic bond.

76) Energy gap of conductor is

A [ ]) 1 - 2 eV.
B [v]) 0 eV.
C [ ]) 5 - 8 eV.
D [ ]) 8 eV.

77) Why is silicon preferred than germanium ?

A [ ]) Leakage current due to minority charge carrier is less in silicon
B [ ]) Current sensitivity of silicon with temperature is less
C [ ]) Silicon has higher tolerance to temperature
D [v]) All the above

78) Why holes are not created in a metal ?

A [ ]) The forbidden band is missing
B [ ]) The conduction band and valance band are overlapped

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 C [v]) Both A & B
D [ ]) None of the above

79) Which is the pair of acceptor elements ?

A [v]) Gallium and boron
B [ ]) Antimony and indium
C [ ]) Phosphorous and aluminium
D [ ]) None of the above

80) A Semiconductor has a

A [v]) Negative Temperature coefficient of resistance
B [ ]) Positive Temperature coefficient of resistance
C [ ]) Constant Temperature coefficient of resistance
D [ ]) None of the above

81) A pn junction/Diode is a/an

A [ ]) Bidirectional component
B [v]) Unidirectional Component
C [ ]) Linear component
D [ ]) None of the Above

82) The amount of time between the creation and disappearance of a free electrons is
called
A [ ]) recombination
B [ ]) bound electrons
C [ ]) drift velocity
D [v]) life time of the carriers

83) Conduction electrons have more mobility than holes because they
A [ ]) have negative charge
B [ ]) are free
C [v]) need less energy to move them
D [ ]) none of the above

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84) The resistance of pn junction when it is forward biased in the order of
A [ ]) Mega Ohm
B [ ]) Killo Ohm
C [v]) Ohm
D [ ]) None of the above

85) Electron mobility is defined as

A [ ]) Diffusion velocity per unit field
B [ ]) the movement of electrons
C [v]) Drift velocity per unit field
D [ ]) None of the above

86) Which of the following does not obey the Ohm's law?
A [ ]) Resistor
B [ ]) Semiconductor
C [ ]) bilateral device
D [ ]) None of the above

87) When pn junction is reverse biased

A [ ]) the witdh of depletion layer increases
B [ ]) a small current flows through it because of minority carriers
C [ ]) it offers a very high resistance

88) A semiconductor diode is

A [ ]) a processing device
B [v]) non-linear device
C [ ]) linear device
D [ ]) bilateral device

89) Depending upon the switching recovery time and on state drop, the power diodes are
types
A [ ]) General purpose, fast recovery.

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 B [ ]) Fast recovery, Schottky.
C [v]) General purpose, fast recovery and schottly.
D [ ]) None of these.

90) Optocouplers combine

A [ ]) IGBTs and MOSFETs.
B [ ]) SITs and BJTs.
C [ ]) Power transistor and silicon transistor.
D [v]) Infrared light emitting diode and a silicon photo transistor.

91) For a diode, reverse recovery time is defined as the time between the instant diode
current becomes zero and the instant reverse recovery current decays to

A [ ]) 0.
B [ ]) 10% of reverse peak current.
C [v]) 25% of reverse peak current.
D [ ]) 15% of reverse peak current.

92) Reverse recovery current in a diode depends upon

A [ ]) PIV.
B [ ]) Temperature.
C [ ]) Storage change
D [v]) Forward field current

93) The softness factor for soft recovery and fast recovery diodes are respectively
A [ ]) 1, 1.
B [ ]) 1, >1.
C [ ]) <1, 1.
D [v]) 1, <1.

94) When the pn junction is forward biased the sequence of events that take place are
A [ ]) diffusion, drift and recombination.
B [v]) injection, diffusion and recombination.

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 C [ ]) diffusion, injection and drift.
D [ ]) none of above.

95) For a reverse biased pn junction, the electric current through the junction increases
abruptly at
A [v]) breakdown voltage.
B [ ]) 0 V.
C [ ]) 0.2 eV.
D [ ]) 7.2 eV.

96) The reverse saturation electric current of a pn junction varies with temperature (T) as
A [v]) T.
B [ ]) 1 / T.
C [ ]) independent of T.
D [ ]) T²

97) The transition capacitance of a reverse biased pn junction having uniform doping on
both sides, varies with junction voltage ( VB ) as
A [ ]) 1 / VB.
B [ ]) VB.
C [v]) ( VB )⁻¹⁄²
D [ ]) ( VB )²

98) The junction capacitance of linearly graded junction varies with the applied reverse
bias, VR as
A [ ]) (VR)⁻¹
B [ ]) (VR)⁻¹⁄²
C [v]) (VR)⁻¹⁄³
D [ ]) (VR)¹⁄²

99) The diffusion capacitance of a forward biased P N junction diode with a steady electric
current I depends on
A [ ]) width of the depleted region.
B [ ]) mean life time of the holes.

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 C [v]) mean life time of the electrons.
D [ ]) junction area.

100) Avalanche breakdown in a diode occurs when

A [ ]) potential barrier is reduced to zero.
B [ ]) forward electric current exceeds certain value.
C [v]) reverse bias exceeds a certain value.
D [ ]) none of the above.

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