5 Assignment-1
5 Assignment-1
Q–1 Using ngspice, simulate a CPL XOR gate, using the models appended to this assignment.
Use a channel length of 0.4 µm for all transistors. Use a transistor width of 0.8 µm for
all pass transistors. For the final inverter, the n channel transistor should have a width
of 0.8 µm, while the p channel transistor should have a width of 1.6 µm. Place a wiring
capacitance of 50 fF at the input of the inverters and load capacitance of 0.1pF at the
output of the inverters.
a) For this part, do not include the p channel pull up used for leakage reduction.
Apply square wave inputs which will go through all combinations of input bits
to show that the correct XOR and XNOR outputs are obtained. Determine the
maximum input frequency till which the circuit gives correct output.
b) For the circuit above (without leakage reduction pull up), find the worst case
leakage current through the inverter for a static input.
c) Now add the leakage reduction pull up p channel transistor. (You may use a
channel length higher than the width for this transistor, giving W/L < 1). Through
simulations, determine the highest W/L value for this transistor for which the
input can be successfully pulled low by the input pass transistors during an input
transition from 1 to 0. What is the worst case leakage current with this size for
the p channel leakage reduction pull up?
For all simulations, use a supply voltage of 3.3 V and test with input voltage of 0.2 V
for logic ‘0’ input and 3.0 V for logic ‘1’ input.
Include the drain and source capacitances for all transistors by specifying ad = as
= 2W × Lmin and pd = ps = 2 × (W + 2Lmin ).
End of assignment.
The models to be used for the n and p channel transistors are given overleaf.
– [P.T.O.]
1
MODELS