Bipolar Transistor

Low Power

Features:
•  PNP Silicon Planar switching Transistors
•  General Purpose Transistor

Pin Configuration
1. Emitter
2. Base
3. Collector

Absolute Maximum Ratings

Description Symbol Value Units
Collector Emitter Voltage Vceo 40
Collector Base Voltage Vcbo 60 V
Emitter Base Voltage Vebo 5
Collector Current Continuous Ic 600 mA
Power Dissipation at Ta = 25°C 600
Derate above 25°C 3.43 W
Pd
Power Dissipation at Tc = 25°C 3 mW/°C
Derate above 25°C 17
Operating and Storage Junction
Tj, Tstg -65 to +200 °C
Temperature Range

Electrical Characteristics: (Tc = +25°C unless specified otherwise)

Description Symbol Test Condition Min. Max. Units
Collector Emitter Voltage *Vceo Ic = 10mA, Ib = 0 40 -
Collector Base Voltage Vcbo Ic = 10μA, Ie = 0 60 - V
Emmiter Base Voltage Vebo Ie = 10μA, Ic = 0 5 -
Collector Cut off Current Icex Vce = 30V, Vbe = 0.5V - 50 nA
Vcb = 50V, Ie = 0 - nA
Collector Cut off Current Icbo Vcb = 50V, Ie = 0, 20
- μA
Ta = 150°C
Base Current Ib Vce = 30V, Vbe = 0.5V - 50 nA
Ic = 0.1mA, Vce = 10V >35
Ic = 1mA, Vce = 10V >50
DC Current Gain hfe Ic = 10mA, Vce = 10V - >75 -
*Ic = 150mA, Vce = 10V 100 - 300
*Ic = 500mA, Vce = 10V >30
*Pulse Test: Pulse Width ≤300μs, Duty Cycle ≤2%

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 Bipolar Transistor
Low Power

Description Symbol Test Condition Min. Max. Units

Small Signal Characteristics
Ic = 150mA, Ib = 15mA 0.4
Collector Emitter Saturation Voltage *Vce(sat) -
Ic = 500mA, Ib = 50mA 1.6
V
Ic = 150mA, Ib = 15mA 1.3
Base Emitter Saturation Voltage *Vbe(sat) -
Ic = 500mA, Ib = 50mA 2.6
Ic = 50mA, Vce = 20V
Transition Frequency **ft 200 - MHz
f = 100MHz
Vcb = 10V, Ie = 0
Output Capacitance Cobo - 8
f = 100KHz
pF
Vbe = 2V, Ic = 0
Input Capacitance Cibo - 30
f = 100KHz
*Pulse Test: Pulse Width ≤300μs, Duty Cycle ≤2%
**ft is defined as the frequency at which /hfe/ extrapolates to unity

Description Symbol Test Condition Min. Max. Units

Switching Time
Delay Time td - 10
Ic = 150mA, IB1 = 15mA,
Rise Time tr - 40
Vcc = 30V
Turn on Time ton - 45
nS
Storage Time ts - 80
Ic = 150mA, IB1 = IB2 = 15mA,
Fall Time tf - 30
Vcc = 6V
Turn off Time toff - 100

Dim. A B C D E F G H J K L
Min. 8.5 7.74 6.09 0.4 - 2.41 4.82 0.71 0.73 12.7 42°
Max. 9.39 8.5 6.6 0.53 0.88 2.66 5.33 0.86 1.02 - 48°
Dimensions : Millimetres

Part Number Table

Description Part Number
Transistor, PNP, TO-39 2N2905
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
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Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.

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