HY4903P/B

N-Channel Enhancement Mode MOSFET

Features Pin Description

• 30V/290A
RDS(ON)= 1.6mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed
• Super Low Gate Charge
• Excellent CdV/dt effect decline
S
• Advanced high cell density Trench technology G
D

• Halogen - Free Device Available

D
S
G

TO-220FB-3L TO-263-2L

Applications

• High Frequency Synchronous Buck D

Converters for Computer Processor Power

• High Frequency Isolated DC-DC G N-Channel MOSFET

Converters with Synchronous Rectification
for Telecom and Industrial Use
S

Ordering and Marking Information

Package Code
P B P : TO-220FB-3L B: TO-263-2L
HY4903 HY4903 Date Code Assembly Material
ÿ
YYXXXJWW ÿ
G YYXXXJWW G YYXXX WW G : Lead Free Device

Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.

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Absolute Maximum Ratings

Symbol Parameter Rating Unit

Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage 30
V
VGSS Gate-Source Voltage ±20
TJ Maximum Junction Temperature 175 °C
TSTG Storage Temperature Range -55 to 175 °C
IS Diode Continuous Forward Current TC=25°C 290 A
Mounted on Large Heat Sink
IDM Pulsed Drain Current * TC=25°C 1000** A
TC=25°C 290
ID Continuous Drain Current A
TC=100°C 200
TC=25°C 214
PD Maximum Power Dissipation W
Tc=100°C 107
RθJC Thermal Resistance-Junction to Case 0.7 °C/W
RθJA Thermal Resistance-Junction to Ambient 62.5 °C/W
EAS Avalanche Energy,Single Pulsed L=0.5mH 1325*** mJ
Note： * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=24V

Electrical Characteristics (TC = 25°C Unless Otherwise Noted)

HY4903
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 30 - - V
VDS=30V, VGS=0V - - 1
IDSS Zero Gate Voltage Drain Current µA
TJ=85°C - - 30
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1.0 - 3.0 V
IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA
VGS=10V, IDS=145A - 1.6 2.0 mΩ
RDS(ON) * Drain-Source On-state Resistance
VGS=4.5V, I DS=145A 2.0 3.0 mΩ
Diode Characteristics
VSD * Diode Forward Voltage ISD=145 A, VGS=0V - 0.8 1.0 V
trr Reverse Recovery Time - 38 - ns
IDS=145A, dlSD/dt=100A/µs
Qrr Reverse Recovery Charge - 80 - nC

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Electrical Characteristics (Cont.) (TC = 25°C Unless Otherwise Noted)

HY4903
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 0.5 - Ω
Ciss Input Capacitance - 11506 -
VGS=0V,
Coss Output Capacitance VDS=25V, - 1236 - pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance - 762 -
td(ON) Turn-on Delay Time - 52 -
Tr Turn-on Rise Time VDD=15V, R G =3.3 Ω, - 120 -
IDS =145A, VGS =10 V, ns
td(OFF) Turn-off Delay Time - 90 -
Tf Turn-off Fall Time - 78 -
Gate Charge Characteristics
Qg Total Gate Charge - 247 -
VDS=24V, VGS=10 V,
Qgs Gate-Source Charge - 27 - nC
I DS =145A
Qgd Gate-Drain Charge - 58 -
Note * : Pulse test ; pulse width ≤300µs, duty cycle≤2%.
.

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Typical Operating Characteristics

Power Dissipation Drain Current

350
250

ID - Drain Current (A)

300 limited by package
Ptot - Power (W)

200
250

150 200

150
100
100
50
50
o
TC=25 C o
TC=25 C,VG=10V
0 0
0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200

Tc - Case Temperature (°C) Tc - Case Temperature (°C)

Safe Operation Area

1000
it
im
n)L 100us
s(o
Rd
ID - Drain Current (A)

100 1ms

10ms

10
DC

1
0.1 1 10 100 400
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
1

Duty = 0.5
Normalized Effective Transient

0.1 0.2

0.1

0.01 0.05

0.02

0.001 0.01

Single Mounted on minimum pad

o
RθJA :62.5 C/W

0.0001
0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration (sec)

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Typical Operating Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

640 4

560

RDS(ON) - On - Resistance (mΩ)

VGS= 7,8,9,10V
480 6V 3
ID - Drain Current (A)

400 VGS=4.5V

320 5V 2
VGS=10V
240

160 4V 1

80 3V

0 0
0 1 2 3 4 5 0 100 200 300 400 500

VDS - Drain-Source Voltage (V) ID - Drain Current (A)

Drain-Source On Resistance Gate Threshold Voltage

8 1.8
IDS=145A IDS =250µA
1.6
7
RDS(ON) - On - Resistance (mΩ)

Normalized Threshold Vlotage

1.4
6
1.2

5
1.0

4 0.8

0.6
3
0.4
2
0.2

1 0.0
4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150 175

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

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Typical Operating Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

2.2
VGS = 10V 200
2.0
IDS = 145A
Normalized On Resistance

1.8

IS - Source Current (A)

1.6 o
Tj=175 C
100
1.4
o
1.2 Tj=25 C

1.0

0.8 10

0.6

0.4
o
RON@T =25
j
C:1.6m Ω
0.2 1
-50 -25 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0

Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V)

Capacitance Gate Charge

22000 10
Frequency=1MHz VDS=24V
20000 9
IDS=145A
VGS - Gate-source Voltage (V)

18000
8
16000
C - Capacitance (pF)

7
14000 Ciss
6
12000
5
10000
4
8000

6000 3

4000 2
Coss
2000 1
Crss
0 0
0 5 10 15 20 25 30 35 40 0 40 80 120 160 200 240 280

VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

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Avalanche Test Circuit and Waveforms

VDS
L VDSX(SUS)
tp
DUT VDS
IAS
RG
VDD
VDD
tp IL EAS
0.01Ω

tAV

Switching Time Test Circuit and Waveforms

VDS
RD
VDS
DUT 90%

VGS
RG
VDD
10%
tp
VGS
td(on) tr td(off) tf

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Package Information
TO-220FB-3L

SYMBOL MIN NOM MAX MIN NOM MAX

A 4.40 4.57 4.70 0.173 0.180 0.185
A1 1.27 1.30 1.33 0.050 0.051 0.052
A2 2.35 2.40 2.50 0.093 0.094 0.098
b 0.77 0.80 0.90 0.030 0.031 0.035
b2 1.17 1.27 1.36 0.046 0.050 0.054
c 0.48 0.50 0.56 0.019 0.020 0.022
D 15.40 15.60 15.80 0.606 0.614 0.622
D1 9.00 9.10 9.20 0.354 0.358 0.362
DEP 0.05 0.10 0.20 0.002 0.004 0.008
E 9.80 10.00 10.20 0.386 0.394 0.402
E1 - 8.70 - - 0.343 -
E2 9.80 10.00 10.20 0.386 0.394 0.402
e 2.54 BSC 0.100 BSC
e1 5.08 BSC 0.200 BSC
H1 6.40 6.50 6.60 0.252 0.256 0.260
L 12.75 13.50 13.65 0.502 0.531 0.537
L1 - 3.10 3.30 - 0.122 0.130
L2 2.50 REF 0.098 REF
P 3.50 3.60 3.63 0.138 0.142 0.143
P1 3.50 3.60 3.63 0.138 0.142 0.143
Q 2.73 2.80 2.87 0.107 0.110 0.113
θ1 5° 7° 9° 5° 7° 9°
θ2 1° 3° 5° 1° 3° 5°
θ3 1° 3° 5° 1° 3° 5°

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TO-263-2L

MM INCH
SYMBOL
MIN NOM MAX MIN NOM MAX
A 4.40 4.57 4.70 0.173 0.180 0.185
A1 1.22 1.27 1.32 0.048 0.050 0.052
A2 2.59 2.69 2.79 0.102 0.106 0.110
A3 0.00 0.10 0.20 0.000 0.004 0.008
b 0.77 0.813 0.90 0.030 0.032 0.035
b1 1.20 1.270 1.36 0.047 0.050 0.054
c 0.34 0.381 0.47 0.013 0.015 0.019
D1 8.60 8.70 8.80 0.339 0.343 0.346
E 10.00 10.16 10.26 0.394 0.400 0.404
E2 10.00 10.10 10.20 0.394 0.398 0.402
e 2.54 BSC 0.100 BSC
H 14.70 15.10 15.50 0.579 0.594 0.610
H2 1.17 1.27 1.40 0.046 0.050 0.055
L 2.00 2.30 2.60 0.079 0.091 0.102
L1 1.45 1.55 1.70 0.057 0.061 0.067
L2 2.50 REF 0.098 REF
L4 0.25 BSC 0.010 BSC
0° 5° 8° 0° 5° 8°
1 5° 7° 9° 5° 7° 9°
2 1° 3° 5° 1° 3° 5°
ΦP1 1.40 1.50 1.60 0.055 0.059 0.063
DEP 0.05 0.10 0.20 0.002 0.004 0.008

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Devices Per Unit

Package Type Unit Quantity
TO-220FB-3L Tube 50
TO-263-2L Tube 50

Classification Profile

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Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)

Average ramp-up rate

3 °C/second max. 3°C/second max.
(Tsmax to TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 See Classification Temp in table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

3 3
Package Volume mm Volume mm
Thickness <350 ≥350
<2.5 mm 235 °C 220 °C
≥2.5 mm 220 °C 220 °C

Table 2. Pb-free Process – Classification Temperatures (Tc)

3 3 3
Package Volume mm Volume mm Volume mm
Thickness <350 350-2000 >2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
≥2.5 mm 250 °C 245 °C 245 °C

Reliability Test Program

Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HOLT JESD-22, A108 1000 Hrs, Bias @ 125°C
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C

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