STS2DPFS20V

P-CHANNEL 20V - 0.14 Ω - 2.5A SO-8

2.7V-DRIVE STripFET™ II MOSFET PLUS SCHOTTKY DIODE

MAIN PRODUCT CHARACTERISTICS

MOSFET VDSS RDS(on) ID
< 0.20Ω (@4.5V)
20 V 2.5 A
< 0.25Ω (@2.7V)
SCHOTTKY IF(AV) VRRM VF(MAX)
3A 30 V 0.51 V
SO-8
DESCRIPTION
This product associates the latest low voltage
StripFETœ in p-channel version to a low drop
Schottky diode. Such configuration is extremely INTERNAL SCHEMATIC DIAGRAM
versatile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and
cellular phones.

MOSFET ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
VDS Dain-source Voltage (VGS = 0) 20 V
VDGR Drain-gate Voltage (RGS = 20 kW) 20 V
VGS Gate- source Voltage ± 12 V
ID Drain Current (continuous) at TC = 25°C 2.5 A
ID Drain Current (continuous) at TC = 100°C 1.58 A
IDM(•) Drain Current (pulsed) 10 A
Ptot Total Dissipation at TC = 25°C 2 W

SCHOTTKY ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
VRRM Repetitive Peak Reverse Voltage 30 V
IF(RMS) RMS Forward Curren 20 A
TL=125 oC
IF(AV) Average Forward Current 3 A
δ =0.5
tp= 10 ms
IFSM Surge Non Repetitive Forward Current 75 A
Sinusoidal
IRSM Non Repetitive Peak Reverse Current tp=100 µs 1 A
dv/dt Critical Rate Of Rise Of Reverse Voltage 10000 V/µs
(•) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
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TERMAL DATA
Rthj-amb (*)ThermalResistance Junction-ambient MOSFET 62.5 oC/W
Rthj-amb (*)ThermalResistance Junction-ambient SCHOTTKY MAX 100 oC/W
Tstg Storage Temperature Range -55 to 150 oC
Tj Maximum Lead Temperature For Soldering Purpose 150 oC

(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t [ 10 sec

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Drain-source ID = 250 µA, VGS = 0
V(BR)DSS 20 V
Breakdown Voltage

IDSS Zero Gate Voltage VDS = Max Rating 1 µA

Drain Current (VGS = 0) VDS = Max Rating TC = 125°C 10 µA

Gate-body Leakage VGS = ± 12 V ±100 nA

IGSS
Current (VDS = 0)

ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 0.6 V

RDS(on) Static Drain-source On VGS = 4.5 V ID = 1 A 0.14 0.20 Ω

Resistance VGS = 2.7 V ID = 1 A 0.20 0.25 Ω

SCHOTTCKY STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Test Conditions Min. Typ. Max. Unit

TJ= 25 oC VR= 30 V 0.2 mA

IR(*) Reversed Leakage Current
TJ= 125 oC VR= 30 V 30 100 mA

TJ= 25 oC IF= 3 A 0.51 mA

VF(*) Forward Voltage drop
TJ= 125 oC IF= 3 A 0.40 0.46 mA

DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (*) Forward Transconductance VDS= 15 V ID=1 A 4 S

Ciss Input Capacitance VDS = 15V, f = 1 MHz, VGS = 0 315 pF

Coss Output Capacitance 87 pF
Crss Reverse Transfer 17 pF
Capacitance

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ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(on) Turn-on Delay Time VDD = 10 V ID = 1 A 38 ns

tr Rise Time RG = 4.7 Ω VGS = 4.5 V 30 ns
(Resistive Load, Figure 3)
Qg Total Gate Charge VDD= 10V ID= 2A VGS=4.5V 3.5 4.7 nC
Qgs Gate-Source Charge 0.34 nC
Qgd Gate-Drain Charge 0.8 nC

SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(off) Turn-off Delay Time VDD = 10 V ID = 1 A 45 ns

tf Fall Time RG = 4.7Ω, VGS = 4.5 V 11 ns
(Resistive Load, Figure 3)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 2 A
ISDM (•) Source-drain Current (pulsed) 10 A

VSD (*) Forward On Voltage ISD = 2 A VGS = 0 1.2 V

trr Reverse Recovery Time ISD = 2 A di/dt = 100A/µs 15 ns

Qrr Reverse Recovery Charge VDD = 10 V Tj = 150°C 7.5 nC
IRRM Reverse Recovery Current (see test circuit, Figure 5) 1 A
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.

Safe Operating Area Thermal Impedance

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Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

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Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature.

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Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Resistive Fig. 4: Gate Charge test Circuit
Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

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SO-8 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.75 0.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033
b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.019
c1 45 (typ.)
D 4.8 5.0 0.188 0.196
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.14 0.157
L 0.4 1.27 0.015 0.050
M 0.6 0.023
S 8 (max.)

0016023

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
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