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Silicon NPN Darlington Transistor 2SD1409: General Description

This document provides specifications for a silicon NPN Darlington transistor. It lists electrical characteristics and limiting values such as collector current, voltage and power dissipation ratings.

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Dinh Thuong Cao
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23 views1 page

Silicon NPN Darlington Transistor 2SD1409: General Description

This document provides specifications for a silicon NPN Darlington transistor. It lists electrical characteristics and limiting values such as collector current, voltage and power dissipation ratings.

Uploaded by

Dinh Thuong Cao
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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2SD1409 SILICON NPN DARLINGTON TRANSISTOR

GENERAL DESCRIPTION
Darington transistor are designed for use as
general purpose amplifiers, switching and motor
control applications.

QUICK REFERENCE DATA TO-220F


SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V - 600 V
VCEO Collector-emitter voltage (open base) - 400 V
IC Collector current (DC) - 6 A
ICM Collector current peak value - 12 A
Ptot Total power dissipation Tmb 25 - 25 W
VCEsat Collector-emitter saturation voltage IC = 4.0A; IB = 0.04A - 2.0 V
Icsat Collector saturation current f=16KHZ A
VF Diode forward voltage IF=3A 2.5 5 V
tf Fall time IC=4.0A,IB1=-IB2=0.04A,VCC=100V 6.0 s

LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V - 600 V
VCEO Collector-emitter voltage (open base) - 400 V
IC Collector current (DC) - 6 A
ICM Collector current peak value - 12 A
IB Base current (DC) - 1 A
IBM Base current peak value - 2 A
Ptot Total power dissipation Tmb 25 - 25 W
Tstg Storage temperature -55 150
Tj Junction temperature - 150

ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
ICE Collector cut-off current VEB=0V,VCE=VCESMmax 0.5 mA
ICES VEB=0V,VCE=VCESMmax 3.0 mA
Tj=125
VCEOsust Collector-emitter sustaining voltage IB=0A,IC=100mA V
L=25mH
VCEsat Collector-emitter saturation voltages IC = 4.0A; IB = 0.04A 2.0 V
VBEsat Base-emitter satuation voltage IC = 4.0A; IB = 0.04A 1.5 V
hFE DC current gain IC = 2A; VCE = 5V 600
VF Diode forward voltage IF=3A 2.5 5.0 V
fT Transition frequency at f = 1MHz IC=2A,VCE=10V 5 MHz
Cc Collector capacitance at f = 1MHz VCB = 50V 50 pF
ts Switching times(16KHz line deflecton circuit) IC=4.0A,IB1=-IB2=0.04A,VCC=100V 10 s
tf Turn-off storage time Turn-off fall time IC=4.0A,IB1=-IB2=0.04A,V CC=100V 6.0 s

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