Republic of the Philippines

BATANGAS STATE UNIVERSITY

Pablo Borbon Main II
Batangas City

COLLEGE OF ENGINEERING, ARCHITECTURE & FINE ARTS

Electronics, Instrumentation and Control, and Mechatronics
Engineering Department

ECE 406 – Electronic Circuit Analysis and Design

Experiment No. 1: Small Signal Parameters

Hilario, Claudette Jane C.

Macasaet, Rhojine Niño M.

Engr. Anela Salvador

September 28, 2020

OBJECTIVE
• To measure the no-load gain of a transistor circuit.
• To measure the input and output of the impedance of a transistor
• To determine the effects of source and load resistances.

EQUIPMENT
• NI Multisim
o 2N2222
o 2N3954
o Resistors
o Capacitors
o Supply Voltage
o Oscilloscope
o Function Generator
• Laptop
INTRODUCTION
A transistor is a device that has two main application—amplifying and switching. This
laboratory uses two transistors to amplify an input voltage signal. Specifically, a BJT (2N2222)
and a JFET (2N3954) is used in this experiment. A bipolar junction transistor, BJT, is a current
controlled amplifier. Amplification depends at the base current which in turn will be amplified at
the collector pin with multiplier 𝛽 which is the gain of the transistor. A junction gate field effect
transistor on the other hand is a voltage-controlled amplifier that has a very high input impedance.
JFET’s very high input impedance makes is an ideal transistor for amplifying signals. And its
variable for amplification is its transconductance 𝑔𝑚 .

In transistor circuit analysis, small signal analysis is used to determine the no load voltage
gain of the transistor design. Another analysis which is very related to small signal is the systems
approach analysis wherein the effect of source and load resistance will be considered on the
amplification of the signal. This laboratory’s objective is to determine the effect of source and load
resistance to the amplification and provide necessary data to comprehensively identify the effects.
The objective of this experiment will be obtained by running numerous transistor amplifier with
different load and source resistance. The data will then be extracted and analyzed then draw
conclusion with accuracy and precision with respect to the data gathered.
PROCEDURE
a. Voltage Gain
The circuit for BJT and JFET were already given in this laboratory experiment and
was constructed using Multisim. The transistors that were used are 2N2222 for BJT and
2N3891 for JFET. In the circuit, 1uf was added as a coupling capacitor. A function
generator was also utilized wherein the positive terminal is connected to the capacitor while
the common is connected to the ground, and the amplitude was set to 5mVp with 1kHz
sinusoidal input. Then, the input and output voltages were measured using an oscilloscope
where channel A and channel B are connected to the Vin and Vout of the circuit
respectively. Lastly, the ratio of the output to the input voltage also known as the gain was
𝑉𝑜𝑢𝑡
calculated using the formula 𝐴𝑣 = . The figures below show the provided circuit of
𝑉𝑖𝑛

BJT (Figure 1) and JFET (Figure 2) for this laboratory experiment.

b. Input Impedance
For this part of the experiment, the circuit provided for BJT and JFET were also
used. A coupling capacitor with a value of 1uf was added in the circuit. Then, to apply
5mVp and 1kHz sinusoidal input to the amplifier, a function generator was used and was
also connected in series with a 100Ω sense resistor. With the use of an oscilloscope where
its channel A is connected to the Vin and channel B connected to the Vout of the circuit,
both of the input and output voltages were measured. These measured values were used to
 𝑉𝑖
calculate the input impedance of the two amplifiers using Ohm’s law 𝑍𝑖 = . To complete
𝐼𝑖
𝑉𝑠𝑜𝑢𝑟𝑐𝑒 −𝑉𝑖𝑛
the solution the input current 𝐼𝑖 was also calculated using 𝐼𝑖 = wherein the
𝑅𝑠𝑒𝑛𝑠𝑒

value of the voltage used is the difference of the voltage source and input voltage.

c. Output Impedance
The same procedure for the input impedance is also applied in this part of the
experiment. The provided circuits for BJT and JFET were also used and constructed in
Multisim. A coupling capacitor with a value of 1uf was added in the circuit. Then, to apply
5mVp and 1kHz sinusoidal input to the amplifier, a function generator was used, it is also
connected in series with a 100Ω sense resistor. An oscilloscope was also utilized to be able
to measure the input and output voltages of the circuit, the channel A is connected to the
Vin and channel B is connected to the Vout. And the measured values were used to
𝑉𝑜
calculate the output impedance of the two amplifiers using Ohm’s law 𝑍𝑜 = wherein
𝐼𝑖

the input current 𝐼𝑜 is calculated through Ohm’s law in which the voltage is the difference
𝑉𝑠𝑜𝑢𝑟𝑐𝑒 −𝑉𝑜
between the voltage source and the input voltage, hence 𝐼𝑜 = .
𝑅𝑠𝑒𝑛𝑠𝑒

d. Effect of Source and Load Resistance

In this part of the experiment, Figure 1 or the circuit for BJT was used and
constructed in Multisim. A coupling capacitor of 1uF was again added to the circuit.
Secondly, a 1kΩ was connected to the circuit as a load resistor. Next was connecting a
function generator to apply a 5mVp with 1kHz sinusoidal input to the amplifier. Compared
to the other procedures, voltage differential probe was used instead of oscilloscope to
measure the input and output voltages. The process is repeated for 2kΩ, 3.3kΩ, 5kΩ and
10kΩ. The voltages measured were the V(p-p) or the peak-to-peak voltages of the circuit
hence the values were divided by 2 to acquire the input and output voltages of the half-
wave cycle. Then, the results are recorded and listed in a table. The gain which is the ratio
𝑉𝑜𝑢𝑡
of the output voltage to the input voltage was then calculated using the formula 𝐴𝑣 = 𝑉𝑖𝑛

.
 Using also the same circuit, the load resistor was removed and a 100Ω series
resistance was connected to the function generator. Instead of using oscilloscope, voltage
differential probe was operated. The voltages with respect to the input of the amplifier and
with respect to the source voltage were measured as well as the output voltage. The process
for this part is repeated using the resistance of 200Ω, 330Ω, 500Ω and 1kΩ. Just like the
procedure in the load resistance, the measured voltages in the circuit were also divided by
2 since it is the peak-to-peak voltage. Then, the measurements are recorded and listed in a
𝑉𝑜𝑢𝑡
table. And using the formula for the voltage gain 𝐴𝑣 = the ratio of the output to the
𝑉𝑖𝑛

input voltage was calculated.

After that, four different combinations of the source and load resistance were made
and constructed were constructed in Multisim. The input and output voltages were
measured using the voltage differential probe. The peak-to-peak voltages were also divided
by 2 and the measured values were tabulated in a table. Lastly, these values were used to
𝑉𝑜𝑢𝑡
calculate the gain using the formula 𝐴𝑣 = .
𝑉𝑖𝑛
RESULTS AND ANALYSIS
a. Voltage Gain

Bipolar Junction Transistor

Figure 3

Figure 4
 After the circuit for BJT 2N2222 transistor was drawn and simulated in Multisim the input
voltage(yellow at the oscilloscope) is recorded to be equal to 4.994𝑚𝑉 and the output voltage(red
at the oscilloscope) is −39.573𝑚𝑉, according to the oscillocope readings shown at figure 4. The
difference of input and output voltage shows the amplification behavior of the circuit. This proves
that the transistor is working as an amplifier and not as as switch. It passed its biasing to be used
as an amplifier. As observed the output in the oscilloscope is at the negative half cycle this is due
to the inverting characteristic of BJT Amplifier configuration that was used. A more defining term
that explains the negative output other than inverting amplification is that the output is 180° out
of phase to the input swing. With input and output voltage at hand, the voltage gain can be
calculated using the formula:

𝑉𝑜𝑢𝑡
𝐴𝑣 =
𝑉𝑖𝑛

Where:

𝐴𝑣 = 𝑉𝑜𝑙𝑡𝑎𝑔𝑒 𝐺𝑎𝑖𝑛

𝑉𝑜𝑢𝑡 = 𝑂𝑢𝑡𝑝𝑢𝑡 𝑉𝑜𝑙𝑡𝑎𝑔𝑒

𝑉𝑖𝑛 = 𝐼𝑛𝑝𝑢𝑡 𝑉𝑜𝑙𝑡𝑎𝑔𝑒

Substituting the values from the oscilloscope gives:

−39.573𝑚𝑉
𝐴𝑣 =
4.994𝑚𝑉

𝐴𝑣 = −7.9241

Wherein 𝐴𝑣 = −7.9241 is the no load voltage gain of the amplifier circuit. It is defined as
the no load voltage gain because there are no resistors connected at the input and the output
terminal. The output is negative due to its inverting characteristic. Since the output is negative the
gain that will be calculated is negative.
 Junction Gate Field Effect Transistor

Figure 5

Figure 6

After the circuit for JFET 2N3954 transistor was drawn and simulated in Multisim the input
voltage(yellow at the oscilloscope) is recorded to be equal to 4.992𝑚𝑉 and the output voltage(red
at the oscilloscope) is −27.020𝑚𝑉, according to the oscillocope readings shown at figure 6. The
behavior of amplification is similar to what was seen at the BJT Transistor. Both configuration
have inverting property. The difference these two configuration have is the rate of amplification.
It can be observed that the output of this amplifier is lower than that of the BJT Amplifier. The
voltage gain calculation is the same for both BJT and JFET. We use the ratio of output voltage to
the input voltage.

𝑉𝑜𝑢𝑡
𝐴𝑣 =
𝑉𝑖𝑛

Where:

𝐴𝑣 = 𝑉𝑜𝑙𝑡𝑎𝑔𝑒 𝐺𝑎𝑖𝑛

𝑉𝑜𝑢𝑡 = 𝑂𝑢𝑡𝑝𝑢𝑡 𝑉𝑜𝑙𝑡𝑎𝑔𝑒

𝑉𝑖𝑛 = 𝐼𝑛𝑝𝑢𝑡 𝑉𝑜𝑙𝑡𝑎𝑔𝑒

Substituting the values from the oscilloscope gives:

−27.020𝑚𝑉
𝐴𝑣 =
4.992𝑚𝑉

𝐴𝑣 = −5.4127

Wherein 𝐴𝑣 = −5.4127 is the no load voltage gain of the amplifier circuit. It is defined
as the no load voltage gain because there are no resistors connected at the input and the output
terminal. The output is negative due to its inverting characteristic. Since the output is negative
the gain that will be calculated is negative. One distinction of a JFET amplifier to BJT is that it
uses a very high input impedance. The very large input impedance is approximated to be infinite.
This very high input impedance causes the current to be approximately zero. And one of the
qualities of an excellent amplifier is its very high input impedance which explains why JFETs is
more practical to use as an amplifier than BJTs.
 b. Input Impedance

Bipolar Junction Transistor

Figure 7

Figure 8

The figures above show the constructed circuit using BJT 2n2222 transistor and the
measured voltages in the oscilloscope. The yellow waveform represents the volatge source which
is equal to 4.994mV and the red waveform is for the input voltage with a measured value of
4.849mV. The measured values show how the input voltage is affected by the sense resistor of
100Ω. With that, input impedance is to be calculated. Below is the computation to know the
impedance that driving the input to the amplifier using the formula:

𝑉𝑖
𝑍𝑖 =
𝐼𝐼

Where:

𝑍𝑖 = 𝐼𝑛𝑝𝑢𝑡 𝐼𝑚𝑝𝑒𝑑𝑎𝑛𝑐𝑒

𝑉𝑖 = 𝑉𝑜𝑙𝑡𝑎𝑔𝑒 𝐼𝑛𝑝𝑢𝑡

𝐼𝑖 = 𝐼𝑛𝑝𝑢𝑡 𝐶𝑢𝑟𝑟𝑒𝑛𝑡

To be able to complete the solution the input current is calculated using the formula:

𝑉𝑠𝑜𝑢𝑟𝑐𝑒 − 𝑉𝑖𝑛
𝐼𝑖 =
𝑅𝑠𝑒𝑛𝑠𝑒

By substituting the measured values and the given parameters, 𝐼𝑖 is:

4.994 𝑚𝑉 − 4.849 𝑚𝑉
𝐼𝑖 =
100𝛺

𝐼𝑖 = 1.45 𝜇𝐴

Using the calculated input current, the input impedance is:

4.849 𝑚𝑉
𝑍𝑖 =
1.45𝜇𝐴

𝑍𝑖 = 3,344137931 𝑚𝛺

𝑍𝑖 = 3,3441𝑚𝛺

From the results, it can be observed that the input current is that small causing it to have a
quiet higher input impedance of 3.3441m𝛺 that resist the current flowing in the input voltage.
 Junction Gate Field-Effect Transistor

Figure 9

Figure 10

The first figure above show the circuit where the values to calculate the input impedance
will be measured and the figure below it display the values that were measured using the
oscilloscope. From the results, it can be noticed that the source voltage and input voltage are both
measured as 4.998 mV. Because of that, the input current is most likely to be equal to 0 A. The
computations below show the calculated input current and input impedance of the circuit.

For the input current, the formula used is:

𝑉𝑠𝑜𝑢𝑟𝑐𝑒 − 𝑉𝑖𝑛
𝐼𝑖 =
𝑅𝑠𝑒𝑛𝑠𝑒

Substituting the measured values and the value of 𝑅𝑠𝑒𝑛𝑠𝑒 = 100𝛺, the input current is:

4.998 𝑚𝑉 − 4.998 𝑚𝑉
𝐼𝑖 =
100𝛺

𝐼𝑖 = 0 𝐴

The input impedance is then calculated using the formula:

𝑉𝑖
𝑍𝑖 =
𝐼𝐼

By substituting the aqcuired input voltage and input current the input impedance is:
4.998𝑚𝑉
𝑍𝑖 =
0𝐴

𝑍𝑖 = 10𝑀𝛺 ≌ ∞

From the results, it can be noticed that the input impedance is equal to 10MΩ or
approximately equal to infinity. It is because the value of source resistance is much lower than that
of the 𝑅𝐺 which is 10𝑀𝛺. From that, high input impedance is produced causing the resistor 𝑅𝐺 to
act as an open circuit preventing the flow of the current.

On the other hand, there is an instance that the group tried to replace the source resistance
of 100Ω to 1MΩ. Unlike from the first results wherein the source and input voltages are the same,
it was observed that using a higher source resistance will cause a difference between the two
voltages meaning that there was a current flowing through it. However, 1MΩ is not advisable to
be used as a source resistance, it is for the reason that the higher the resistance, the higher the
power dissipation of the circuit. Thus, smaller values of resistor are used as a source resistor.
 c. Output Impedance

Bipolar Junction Transistor

Figure 11

Figure 12

Figure 12 shows the oscilloscope readings that show the voltage right at the function
generator and from the output pin before the coupling capacitor of the BJT Amplifier circuit. The
voltage reading at the A channel of the oscilloscope is the function gen voltage and the B channel
is the drop after the coupling capacitor and load resistor. The output current of this amplifier can
be solved by getting the ratio of the difference of source voltage and output voltage to the load
resistance given by the equation:

𝑉𝑠𝑜𝑢𝑟𝑐𝑒 − 𝑉𝑜𝑢𝑡
𝐼𝑜𝑢𝑡 =
𝑅𝑠𝑒𝑛𝑠𝑒

Where:

𝐼𝑜𝑢𝑡 = 𝑂𝑢𝑡𝑝𝑢𝑡 𝐶𝑢𝑟𝑟𝑒𝑛𝑡

𝑉𝑠𝑜𝑢𝑟𝑐𝑒 = 𝑆𝑜𝑢𝑟𝑐𝑒 𝑉𝑜𝑙𝑡𝑎𝑔𝑒

𝑉𝑜𝑢𝑡 = 𝑂𝑢𝑡𝑝𝑢𝑡 𝑉𝑜𝑙𝑡𝑎𝑔𝑒

𝑅𝑠𝑒𝑛𝑠𝑒 = 𝐿𝑜𝑎𝑑 𝑅𝑒𝑠𝑖𝑠𝑡𝑎𝑛𝑐𝑒

Substituting the values to the equation yields:

4.994𝑚𝑉 − 4.868𝑚𝑉
𝐼𝑜𝑢𝑡 =
100𝛺

𝐼𝑜𝑢𝑡 = 1.26𝜇𝐴

This means that the output current from the given equation is 1.26𝜇𝐴. This current just
shows the effect of output impedance to the circuit. 1.26𝜇𝐴 does not necessarily mean to be the
actual output current because there is no input voltage to be amplified. The 1.26𝜇𝐴 is the current
that will be drawn by the load resistor 100Ω when an actual input voltage is connected to the
amplifier.

Since output voltage was measured and output current is calculated, an output impedance
can be calculated given by the equation:

𝑉𝑜𝑢𝑡
𝑍𝑜𝑢𝑡 =
𝐼𝑜𝑢𝑡
By substitution:

4.994𝑚𝑉
𝑍𝑜𝑢𝑡 =
1.26𝜇𝐴

𝑍𝑜𝑢𝑡 = 3.9635𝑘Ω

The output impedance of the circuit is 3.9635𝑘Ω using the formula provided in this
laboratory. This output impedance is affected by the collector resistor 10𝑘Ω, emitter resistor
1.2𝑘Ω, and 𝑟𝑜 present in a BJT Transistor. Emitter resistor is not bypassed at small signal analysis,
reason why it is a factor in output impedance.
 Junction Gate Field-Effect Transistor

Figure 13

Figure 14

Circuit above, figure 14, is JFET amplifier with a load resistor connected to the output pin.
The oscilloscope reading shows the input voltage (Channel A) and the output voltage (Channel B).
Input voltage is the voltage from the function generator and the output voltage is the drop after the
load resistance and output coupling capacitor. Using the input, output voltage, and load resistor an
output current can be calculated by the formula:

𝑉𝑠𝑜𝑢𝑟𝑐𝑒 − 𝑉𝑜𝑢𝑡
𝐼𝑜𝑢𝑡 =
𝑅𝑠𝑒𝑛𝑠𝑒

Where:

𝐼𝑜𝑢𝑡 = 𝑂𝑢𝑡𝑝𝑢𝑡 𝐶𝑢𝑟𝑟𝑒𝑛𝑡

𝑉𝑠𝑜𝑢𝑟𝑐𝑒 = 𝑆𝑜𝑢𝑟𝑐𝑒 𝑉𝑜𝑙𝑡𝑎𝑔𝑒

𝑉𝑜𝑢𝑡 = 𝑂𝑢𝑡𝑝𝑢𝑡 𝑉𝑜𝑙𝑡𝑎𝑔𝑒

𝑅𝑠𝑒𝑛𝑠𝑒 = 𝐿𝑜𝑎𝑑 𝑅𝑒𝑠𝑖𝑠𝑡𝑎𝑛𝑐𝑒

Substituting the values to the equation yields:

4.998𝑚𝑉 − 4.676𝑚𝑉
𝐼𝑜𝑢𝑡 =
100𝛺

𝐼𝑜𝑢𝑡 = 3.22𝜇𝐴

Using the equation, the output current is 3.22𝜇𝐴. This is not the actual output current of
this amplifier. This is the current that will be drawn by the load resistor when the JFET Amplifier
is actually used as an amplifier by putting an input voltage at the gate pin. This current will affect
the output impedance of the circuit. Output impedance of the circuit is given by the ratio of output
voltage to output current.

𝑉𝑜𝑢𝑡
𝑍𝑜𝑢𝑡 =
𝐼𝑜𝑢𝑡

By substitution:

4.998𝑚𝑉
𝑍𝑜𝑢𝑡 =
3.22𝜇𝐴

𝑍𝑜𝑢𝑡 = 1.5522𝑘Ω

The output impedance calculate is 1.5522𝑘Ω. This output impedance is the total resistance
of drain resistance, internal drain resistance, and the load resistance. Compared to BJT the source
resistance in this JFET circuit is not included, it is due to the bypass capacitor that is connected to
source pin. This capacitor will act as a short circuit in small signal analysis meaning, the 1.1𝑘Ω
source resistance is in parallel with a wire connected to ground which can be considered to have a
very high resistance and 1.1𝑘Ω can be considered to be shorted out and not included at small signal
analysis.
d. Effect of Source and Load Resistance
Source Resistor Alone

Bipolar Junction Transistor

 Figures 15-20

On the previous portion of this laboratory experiment no load voltage gain and current
rating of source and load resistor was tested. On this one, the effect of source resistance to the
gain of the amplifier will be tested. The table of values below consolidated the two different
input consideration: one after the function generator and another one after the input coupling
capacitor. Two gain will be calculated using the gain formula used for voltage gain on the first
part of this laboratory.

𝑉𝑜𝑢𝑡
𝐴𝑣 =
𝑉𝑖𝑛

Using the voltage readings and the formula above the table below is created.

Table 1: Voltage Gain with Respect to Voltage Before Source Resistance

Source Resistance Input Voltage Vout Gain

100 4.995mV -39.05mV 7.8238
220 4.995mV -38.5mV 7.7077
330 4.995mV -38mV 7.6076
500 4.995mV -37.25mV 7.4575
1k 4.995mV -35.15mV 7.0370
 Table 2/: Voltage Gain with Respect to Voltage Along Source Resistance

Source Resistance Input Voltage along Vout Gain

Source Resistance
100 4.925mV 39.05mV 7.9289
220 4.855mV 38.5mV 7.9300
330 4.79mV 38mV 7.9332
500 4.69mV 37.25mV 7.9424
1k 4.43mV 35.15mV 7.9345

To further observe the effect of source resistance a line graph can be used.

Source Resistance Effect on Voltage Gain

8.2
8
7.8
7.6
Voltage Gain

7.4
7.2
7
6.8
6.6
6.4
100 220 330 500 1000
Source Resistance

Before Source Resistance After Source Resistance

On the chart above it can be seen that as the source resistance increases the voltage gain
with respect to the actual input voltage decreases. This happens due to the voltage division
occurring from the input voltage to the actual input of the amplifier. Since voltage division is
involved the voltage at the function generator is not the same voltage that was amplified in the
transistor. We can also see that the input voltage is decreasing as source resistance increase. Since
the voltage gain is the ratio of output voltage to the input voltage, we can easily conclude that
increasing source resistance results in a decreasing voltage gain.
 On the other hand, looking at the plot describing the behavior of gain with respect to input
voltage along the source resistance the voltage gain is increasing. This is because the input voltage
that was recorded was already been divided through voltage division. Unlike the previous data, the
function generator voltages are constant but the output voltage already has been influenced by the
source resistance. Since the voltage to consider is at the input part of the transistor it is varying
with respect to the source resistance. Both input and output voltage are decreasing. Even if both
parameters needed on voltage gain, the gain still increases. Reason for this is that input voltage
decreases at a faster rate than the output voltage. Since input voltage is the denominator of the
equation and it is decreasing faster than the numerator then it is safe to conclude that voltage gain
increases as input voltage along the source resistance increases.

The conclusion drawn on the second condition is not ideal. To calculate the actual voltage
gain, it should be taken from the actual input voltage not on the base pin of the transistor. The
voltage from the function generator is what is actually being amplified. Voltage after the source
resistance is just a DC parameter not to be considered in calculating the voltage gain. Therefore,
in this part of the laboratory, the source resistance value is indirectly proportional to the voltage
gain of the amplifier.
Load Resistor Alone

Bipolar Junction Transistor

 The figures above show how the load resistance is measured in Multisim using the voltage
differential probe and the results can be seen on the yellow figure connected to the probe. From
the given values, the V(p-p) or the peak-to-peak voltage is used. Since it is V(p-p) the voltage is
divided into two to find the input and output voltages of a half-wave cycle. And the results of the
measured voltages of each source resistance are recorded in the table above.

By looking at the table, it can be noticed that the input voltages of the load resistors are the
same. On the other hand, the output voltage is different to each other and it can be observed that
the higher the load resistance, the lower the output voltage would be. To determine the gain for
each load resistance the formula used is:

𝑉𝑜
𝐴𝑣 =
𝑉𝑖

Below are the computations in calculating the gain of each source resistance.
 Using 1k load resistor: Using 2k load resistor:
3.675𝑚𝑉 6.75𝑚𝑉
𝐴𝑣 = 𝐴𝑣 =
4.995𝑚𝑉 4.995𝑚𝑉
𝐴𝑣 = 7.3574 𝐴𝑣 = 1,3514

Using 3.3k load resistor: Using 5k load resistor:

10𝑚𝑉 13.4𝑚𝑉
𝐴𝑣 = 𝐴𝑣 =
4.995𝑚𝑉 4.995𝑚𝑉
𝐴𝑣 = 2.0020 𝐴𝑣 = 2.6827

Using 10k load resistor:

20𝑚𝑉
𝐴𝑣 =
4.995𝑚𝑉
𝐴𝑣 = 4.0040

Load Resistance Vin Vout Gain

1k 4.995mV 3.675mV 7.3574
2k 4.995mV 6.75mV 1.3514
3.3k 4.995mV 10mV 2.0020
5k 4.995mV 13.4mV 2.6827
10k 4.995mV 20mV 4.0040

From the results acquired in computing the gain, it is noticeable how the voltage gain
decreases despite of having the same input voltage. It was already mentioned using the table that
there are differences when it comes to the output voltage and it was clearly observed that as the
load resistance in the circuit increases, the output voltage decreases. It is because as the resistance
increases the current decreases and the voltage that is directly proportional to it will also decrease.
And this will affect the gain of the circuit in a way that having a lower output voltage is also having
a lower gain.
 Combination

Bipolar Junction Transistor

Source Resistance Load Resistance Input Voltage Output Voltage Gain

220Ω 2kΩ 4.99mV 6.55mV 1.3113
220Ω 10kΩ 4.99mV 19.5mV 3.9078
100Ω 5kΩ 4.99mV 12.65mV 2.5325
1kΩ 5kΩ 4.99mV 3.635mV 0.7285
In order to determine the effect of source resistance and load resistance collectively, four
BJT Amplifiers were designed with variations on the input and output resistors. The first two
designs have a fixed source resistance and load resistance is varied. Fixed source resistance is set
to 220𝛺 and load resistor is varied by 2𝑘Ω and 10𝑘Ω. The gain when load resistance is 2𝑘Ω is
around 1.3113 while when it is 10𝑘Ω the gain is 3.9078. From these data it can be determined that
higher load resistor yield higher voltage amplification by the BJT Amplifier.

On the other hand, the load resistor is set to a fixed value—5𝑘Ω. On this portion the source
resistance is then varied by 100Ω and 1𝑘Ω. The gain when the source resistance is 100Ω is 2.5325
while 1𝑘Ω source resistance yields a gain of 0.7285. From the gain calculated using the ratio of
output voltage and input voltage it can be determined that the gain is indirectly proportional to the
resistive value of source resistance.

When combined source resistance is indirectly proportional and load resistance is directly
proportional to the gain. This contradicting effect helps in designing a more efficient amplifier.
Source and load resistance balance the control of voltage gain. It is ideal because adjustments can
be made on the input as well as the output. If only one side can be varied or the effect is similar,
power efficiency would evidently be more difficult to design or attain. Therefore, source and load
resistance is ideal in designing a transistor amplifier.
CONCLUSION
This laboratory experiment about small signal parameters is made possible using Multisim.
In this experiment, two circuits with two different transistors, BJT and JFET were given. By
following the provided instructions, the needed measurements for the voltage gain, input and
output impedances as well as the effects of load and source resistances were obtained. These
measurements were then used to calculate what was required to find in each part. Through this
experiment, the students were exposed in learning more about the AC small signal parameters and
how it affects a transistor in working as an amplifier. The results acquired using the BJT and JFET
were also compared and it was learned that these differences are what makes them applicable to
be able to make a good amplifier design. Furthermore, this experiment also enabled the students
to discover and explore more the use of Multisim. It was mentioned in the procedure that two kinds
of measuring apparatus were used, the oscilloscope and the voltage differential probe though they
have different functions, both still measured the input and output voltages needed in each part of
the experiment.

At the end of the experiment, the results in each parameter were obtained in accordance to
the given instructions. The outcomes in each part were compared to its opposite and the differences
were noticed. In the results and analysis of the experiment, the discussions as well as the answer
to the questions in each part were explained. Consequently, with the results and discussions made
throughout the experiment, it can be said that the objectives were successfully achieved.