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Consider An Sos Capacitor As Shown in Figure 11 63 Assume The Sio 2 Is Ideal No Trapped Charge

The document describes an SOS capacitor with a 500 Angstrom thick silicon dioxide layer and asks the reader to: sketch the energy band diagram under flat-band, +3V, and -3V conditions; calculate the flat-band voltage; estimate the oxide voltage at +3V and -3V; and sketch the high-frequency C-V characteristic curve.

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371 views1 page

Consider An Sos Capacitor As Shown in Figure 11 63 Assume The Sio 2 Is Ideal No Trapped Charge

The document describes an SOS capacitor with a 500 Angstrom thick silicon dioxide layer and asks the reader to: sketch the energy band diagram under flat-band, +3V, and -3V conditions; calculate the flat-band voltage; estimate the oxide voltage at +3V and -3V; and sketch the high-frequency C-V characteristic curve.

Uploaded by

Charlotte
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Consider an SOS capacitor as shown in Figure 11.63.

Assume the SiO 2 is ideal (no trapped charge)...

Consider an SOS capacitor as shown in Figure 11.63. Assume the SiO2 is ideal (no trapped
charge) and has a thickness of tox, = 500 A. The doping concentrations are
Consider an SOS capacitor as shown in Figure 11.63. Assume the SiO2 is ideal (no trapped
charge) and has a thickness of tox, = 500 A. The doping concentrations are
(a) Sketch the energy band diagram through the device for (i) flat-
band, (ii) VG = +3 V, and (iii) VG = -3 V. (b) Calculate the flat-band voltage. (c) Estimate the
voltage across the oxide for (i) VG = +3 V and (ii) VG = 3 V. (d) Sketch the high-frequency C-
Characteristic curve.

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