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PNP Silicon AF Transistors BC 327 BC 328: Type Marking Package Pin Configuration 1 2 3 Ordering Code

The document describes PNP silicon bipolar junction transistors (BC 327 and BC 328) that provide high current gain, high collector current, and low saturation voltage. The transistors have maximum ratings for voltages, currents, and power dissipation. Electrical characteristics are provided, including DC parameters like current gain and saturation voltages, as well as AC parameters like transition frequency and input/output capacitances.

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112 views6 pages

PNP Silicon AF Transistors BC 327 BC 328: Type Marking Package Pin Configuration 1 2 3 Ordering Code

The document describes PNP silicon bipolar junction transistors (BC 327 and BC 328) that provide high current gain, high collector current, and low saturation voltage. The transistors have maximum ratings for voltages, currents, and power dissipation. Electrical characteristics are provided, including DC parameters like current gain and saturation voltages, as well as AC parameters like transition frequency and input/output capacitances.

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Since the End
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© © All Rights Reserved
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PNP Silicon AF Transistors BC 327

BC 328

● High current gain


● High collector current
● Low collector-emitter saturation voltage
● Complementary types: BC 337, BC 338 (NPN)
2

3
1

Type Marking Ordering Code Pin Configuration Package1)


1 2 3
BC 327 – Q62702-C311 C B E TO-92
BC 327-16 Q62702-C311-V3
BC 327-25 Q62702-C311-V4
BC 327-40 Q62702-C311-V2
BC 328 Q62702-C312
BC 328-16 Q62702-C312-V3
BC 328-25 Q62702-C312-V4
BC 328-40 Q62702-C312-V2

1) For detailed information see chapter Package Outlines.

Semiconductor Group 1 5.91


BC 327
BC 328

Maximum Ratings
Parameter Symbol Values
BC 327 BC 328 Unit
Collector-emitter voltage VCE0 45 25 V
Collector-base voltage VCB0 50 30
Emitter-base voltage VEB0 5
Collector current IC 800 mA
Peak collector current ICM 1 A
Base current IB 100 mA
Peak base current IBM 200
Total power dissipation, TC = 66 ˚C Ptot 625 mW
Junction temperature Tj 150 ˚C
Storage temperature range Tstg – 65 … + 150

Thermal Resistance

Junction - ambient Rth JA ≤ 200 K/W


Junction - case1) Rth JC ≤ 135

1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.

Semiconductor Group 2
BC 327
BC 328

Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.

DC characteristics
Collector-emitter breakdown voltage V(BR)CE0 V
IC = 10 mA
BC 327 45 – –
BC 328 25 – –
Collector-base breakdown voltage V(BR)CB0
IC = 100 µA
BC 327 50 – –
BC 328 30 – –
Emitter-base breakdown voltage V(BR)EB0 5 – –
IE = 10 µA
Collector cutoff current ICB0
VCB = 25 V BC 328 – – 100 nA
VCB = 45 V BC 327 – – 100 nA
VCB = 25 V, TA = 150 ˚C BC 328 – – 10 µA
VCB = 45 V, TA = 150 ˚C BC 327 – – 10 µA

Emitter cutoff current IEB0 – – 100 nA


VEB = 4 V
DC current gain1) hFE –
IC = 100 mA; VCE = 1 V
BC 327/16; BC 328/16 100 160 250
BC 327/25; BC 328/25 160 250 400
BC 327/40; BC 328/40 250 350 630
IC = 300 mA; VCE = 1 V
BC 327/16; BC 328/16 60 – –
BC 327/25; BC 328/25 100 – –
BC 327/40; BC 328/40 170 – –
Collector-emitter saturation voltage1) VCEsat – – 0.7 V
IC = 500 mA; IB = 50 mA
Base-emitter saturation voltage1) VBEsat – – 2
IC = 500 mA; IB = 50 mA

1) Pulse test: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group 3
BC 327
BC 328

Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.

AC characteristics
Transition frequency fT – 200 – MHz
IC = 50 mA, VCE = 5 V, f = 20 MHz
Output capacitance Cobo – 12 – pF
VCB = 10 V, f = 1 MHz
Input capacitance Cibo – 60 –
VEB = 0.5 V, f = 1 MHz

Semiconductor Group 4
BC 327
BC 328

Total power dissipation Ptot = f (TA; TC) Permissible pulse load RthJA = f (tp)

Collector current IC = f (VBE) Collector cutoff current ICB0 = f (TA)


VCE = 1 V VCB = 45 V

Semiconductor Group 5
BC 327
BC 328

DC current gain hFE = f (IC) Transition frequency fT = f (IC)


VCE = 1 V f = 20 MHz, TA = 25 ˚C

Collector-emitter saturation voltage Base-emitter saturation voltage


VCEsat = f (IC) VBEsat = f (IC)
hFE = 10 hFE = 10

Semiconductor Group 6

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