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Intrinsic Semiconductor: Free Electrons Holes

The Fermi level represents the probability that an energy level is occupied by an electron. In an intrinsic semiconductor, the number of electrons in the conduction band equals the number of holes in the valence band, so the Fermi level lies in the middle of the band gap. In n-type and p-type extrinsic semiconductors, dopants introduce excess electrons or holes, shifting the Fermi level closer to the conduction or valence band respectively. The position of the Fermi level depends on factors like temperature, doping concentration, and density of states in each band.

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Syed Zubair Zahid
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697 views

Intrinsic Semiconductor: Free Electrons Holes

The Fermi level represents the probability that an energy level is occupied by an electron. In an intrinsic semiconductor, the number of electrons in the conduction band equals the number of holes in the valence band, so the Fermi level lies in the middle of the band gap. In n-type and p-type extrinsic semiconductors, dopants introduce excess electrons or holes, shifting the Fermi level closer to the conduction or valence band respectively. The position of the Fermi level depends on factors like temperature, doping concentration, and density of states in each band.

Uploaded by

Syed Zubair Zahid
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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  Intrinsic semiconductor

Fermi level in intrinsic semiconductor

The probability of occupation of energy levels in valence


band and conduction band is called Fermi level. At
absolute zero temperature intrinsic semiconductor acts as
perfect insulator. However as the temperature
increases free electrons and holes gets generated.

In intrinsic or pure semiconductor, the number of holes in


valence band is equal to the number of electrons in the
conduction band. Hence, the probability of occupation of
energy levels in conduction band and valence band are
equal. Therefore, the Fermi level for the intrinsic
semiconductor lies in the middle of forbidden band.
Fermi level in the middle of forbidden band indicates equal
concentration of free electrons and holes.

The hole-concentration in the valence band is given as 

                                     

The electron-concentration in the conduction band is given


as

                                      
Where KB is the Boltzmann constant

   T is the absolute temperature of the intrinsic semiconductor

   Nc is the effective density of states in the conduction band.

   Nv is the effective density of states in the valence band.

The number of electrons in the conduction band is


depends on effective density of states in the conduction
band and the distance of Fermi level from the conduction
band.  
The number of holes in the valence band is depends on
effective density of states in the valence band and the
distance of Fermi level from the valence band.  

For an intrinsic semiconductor, the electron-carrier


concentration is equal to the hole-carrier concentration.

It can be written as

                 p = n = ni

Where P = hole-carrier concentration

            n = electron-carrier concentration

          and ni = intrinsic carrier concentration

The fermi level for intrinsic semiconductor is given as,

   Where EF is the fermi level


               EC is the conduction band
               EV is the valence band

Therefore, the Fermi level in an intrinsic semiconductor


lies in the middle of the forbidden gap.
Extrinsic semiconductor
Fermi level in extrinsic semiconductor

In extrinsic semiconductor, the number of electrons in the


conduction band and the number of holes in the valence
band are not equal. Hence, the probability of occupation of
energy levels in conduction band and valence band are
not equal. Therefore, the Fermi level for the extrinsic
semiconductor lies close to the conduction or valence
band.

Fermi level in n-type semiconductor


In n-type semiconductor pentavalent impurity is added.
Each pentavalent impurity donates a free electron. The
addition of pentavalent impurity creates large number of
free electrons in the conduction band. 

                            

At room temperature, the number of electrons in the


conduction band is greater than the number of holes in the
valence band. Hence, the probability of occupation of
energy levels by the electrons in the conduction band is
greater than the probability of occupation of energy levels
by the holes in the valence band. This probability of
occupation of energy levels is represented in terms of
Fermi level. Therefore, the Fermi level in the n-type
semiconductor lies close to the conduction band.

The Fermi level for n-type semiconductor is given as

          Where EF is the fermi level.


                     EC is the conduction band. 
                     KB is the Boltzmann constant.
                     T is the absolute temperature. 
                    NC is the effective density of states in the conduction band.
                    ND is the concentration of donar atoms.

Fermi level in p-type semiconductor


In p-type semiconductor trivalent impurity is added. Each
trivalent impurity creates a hole in the valence band and
ready to accept an electron. The addition of trivalent
impurity creates large number of holes in the valence
band. 
                         

At room temperature, the number of holes in the valence


band is greater than the number of electrons in the
conduction band. Hence, the probability of occupation of
energy levels by the holes in the valence band is greater
than the probability of occupation of energy levels by the
electrons in the conduction band. This probability of
occupation of energy levels is represented in terms of
Fermi level. Therefore, the Fermi level in the p-type
semiconductor lies close to the valence band.

The Fermi level for p-type semiconductor is given as


Where   NV is the effective density of states in the valence band.
              NA is the concentration of acceptor atoms. 

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