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Darlington: Silicon NPN Triple Diffused Planar Transistor

The document provides specifications for the 2SD2439 silicon NPN triple diffused planar transistor. It is a Darlington transistor intended for audio, series regulator, and general purpose applications. The document lists the transistor's maximum ratings and electrical characteristics, including collector-emitter breakdown voltage, current gain, saturation voltage, and more. It also provides the transistor's external dimensions in accordance with the TO-3PF package format.
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0% found this document useful (0 votes)
87 views2 pages

Darlington: Silicon NPN Triple Diffused Planar Transistor

The document provides specifications for the 2SD2439 silicon NPN triple diffused planar transistor. It is a Darlington transistor intended for audio, series regulator, and general purpose applications. The document lists the transistor's maximum ratings and electrical characteristics, including collector-emitter breakdown voltage, current gain, saturation voltage, and more. It also provides the transistor's external dimensions in accordance with the TO-3PF package format.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Equivalent circuit C

2SD2439
B

Darlington (7 0Ω )
E

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1588) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SD2439 Unit Symbol Conditions 2SD2439 Unit

0.8±0.2
15.6±0.2 5.5±0.2
VCBO 160 V ICBO VCB=160V 100max µA 3.45 ±0.2

VCEO 150 V IEBO VEB=5V 100max µA

5.5
9.5±0.2
VEBO 5 V V(BR)CEO IC=30mA 150min V

23.0±0.3
IC 10 A hFE VCE=4V, IC=7A 5000min∗ ø3.3±0.2
a
IB 1 VCE(sat) IC=7A, IB=7mA 2.5max V

1.6
A b

3.0
PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA 3.0max V

3.3
Tj 150 °C fT VCE=12V, IE=–2A 55typ MHz 1.75 0.8

16.2
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 95typ pF 2.15
+0.2
1.05 -0.1

∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 0.65 +0.2
5.45±0.1 5.45±0.1 -0.1 3.35
■Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
70 10 7 10 –5 7 –7 0.5typ 10.0typ 1.1typ
B C E b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)


(V C E =4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

10 3 10
A
A
10 m A

2m 1. 5m A
5m
2.

8 1.2 mA 8

Collector Current I C (A)


Collector Current I C (A)

1m A
2
6 6
0.8mA
I C =10A

I C =7A

p)

mp)
mp)
4 0.6mA 4

Tem
I C =5A

e Te

e Te
1

se

(Cas

(Cas
(Ca
I B =0.4mA

˚C
2 2

25˚C

–30˚C
125
0 0 0
0 2 4 6 0.2 0.5 1 5 10 50 100 200 0 1 2 2.5
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics


θ j- a ( ˚ C/ W)

(V C E =4V) (V C E =4V)
40000 70000 3
50000
125˚C
DC Curr ent Gain h FE

DC Curr ent Gain h F E

Typ
Transient Thermal Resistance

1
10000 10000 25˚C

5000 0.5
5000 –30˚C

1000

1000 500 0.1


02 0.5 1 5 10 0.2 0.5 1 5 10 1 5 10 50 100 500 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating


(V C E =12V)
100 30 80

10
m
s
Ma xim um Powe r Dissipation P C ( W)

10
80 10
DC 0m
Cut- off Fr equ ency f T (MH Z )

60
5
ith

s
Collecto r Cur ren t I C (A)

In
fin

Typ
60
ite
he

40
at

1
si
nk

40
0.5

Without Heatsink 20
20 Natural Cooling

0.1
Without Heatsink
3.5
0 0.05 0
–0.02 –0.1 –1 –10 3 5 10 50 100 200 0 50 100 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

152
This datasheet has been downloaded from:

www.DatasheetCatalog.com

Datasheets for electronic components.

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