Novel Memory Structures in QCA Nano Technology: Iraqi Journal For Electrical and Electronic Engineering
Novel Memory Structures in QCA Nano Technology: Iraqi Journal For Electrical and Electronic Engineering
Open Access
Correspondence
*Ali H. Majeed
Electrical Department, Faculty of Engineering,
University of Kufa, Kufa, Iraq
Email: [email protected]
Abstract
Quantum-dot Cellular Automata (QCA) is a new emerging technology for designing electronic circuits in nanoscale. QCA
technology comes to overcome the CMOS limitation and to be a good alternative as it can work in ultra-high-speed. QCA
brought researchers attention due to many features such as low power consumption, small feature size in addition to high
frequency. Designing circuits in QCA technology with minimum costs such as cells count and the area is very important. This
paper presents novel structures of D-latch and D-Flip Flop with the lower area and cell count. The proposed Flip-Flop has
SET and RESET ability. The proposed latch and Flip-Flop have lower complexity compared with counterparts in terms of cell
counts by 32% and 26% respectively. The proposed circuits are designed and simulated in QCADesigner software.
KEYWORDS: QCA technology, D Flip-Flop, Memory unit, Nanotechnology.
II. BACKGROUND
P = -1 P = +1
The basic QCA technology block is a quantum cell. This cell
consists of four holes (dots) in addition to a couple of Fig.1: QCA cell configuration
electrons. The electrons configuration inside the cell gives it The dominant gate in QCA technology is the majority gate
a certain polarization. Only two configurations can be where AND/OR gates can be built using this gate. Majority
formed by a QCA cell so, it can represent the binary gate constructed with 5 cells as illustrated in Figure 2. The
This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and
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© 2020 The Authors. Iraqi Journal for Electrical and Electronic Engineering by College of Engineering, University of Basrah.
https://doi.org/10.37917/ijeee.sceeer.3rd.17 https://www.ijeee.edu.iq 119
120 | Ali H. Majeed et al
(a) (b)
(a) (b)
Delay
Fig. 10: Proposed D Flip-Flop (a) +Ve edge trigger (b) -Ve
edger trigger
D0 From designs shown in Figure 10, it can add set and reset
feature by adding majority gate at the output. The proposed
Flip-Flop with set/reset ability will be as depicted in Figure
Out
MUX 11. The functionality table of the proposed flip-flop is
detailed in Table 1. The proposed structures in this work are
very efficient compared to the early reported ones in terms
D D1
of number of cells and layout area, and adopting them to
larger circuits will cause significant improvements.
Enabl
e
Fig. 8: D flip-flop Block diagram
MUX
TABLE 1:
Proposed D Flip-Flop (+Ve) functionality table
P S Clock D Out(t+1)
transition
Fig. 9: Proposed D latch 0 0 x x 0 (reset)
1 1 x x 1 (set)
0 1 0 to 1 0 0
1 0
0 1 0 to 1 1 1
1 0
0 1 1 to 0 X Out
1 0
122 | Ali H. Majeed et al
Set
(a)
(b)
Fig. 13: Output waveforms of the proposed D-FF with
set/reset (a) positive edge (b) negative edge
TABLE 2:
Proposed D latch comparison table
Design Area Cell count Clock
(µm2) phases
D Latch in [26] 0.05 48 4
D Latch in [27] 0.06 43 4
D Latch in [28] 0.02 28 2
D Latch in [21] 0.02 19 3
Proposed D latch 0.01 13 3
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