1.

It has been theoretically proposed that the spin textures of surface states in a topological insulator can be directly transferred to graphene by means of the proximity effect, which is
very important for realizing a two-dimensional topological insulator based on graphene. Here we report the anomalous magnetotransport properties of graphene−topological insulator
Bi2Se3 heterojunctions, which are sensitive to the electronic coupling between graphene and the topological surface state. The coupling between the pz orbitals of graphene and the p
orbitals of the surface states on the Bi2Se3 bottom surface can be enhanced by applying a perpendicular negative magnetic field, resulting in a giant negative magnetoresistance at the
Dirac point up to about −91%. An obvious resistance dip in the transfer curve at the Dirac point is also observed in the hybrid devices, which is consistent with theoretical predictions
of the distorted Dirac bands with nontrivial spin textures inherited from the Bi 2Se3 surface states.

2. Realization of the quantum spin Hall effect in graphene devices has remained an outstanding challenge dating back to the inception of the field of topological insulators.
Graphene’s exceptionally weak spin-orbit coupling—stemming from carbon’s low mass—poses the primary obstacle. We experimentally and theoretically study artificially
enhanced spin-orbit coupling in graphene via random decoration with dilute Bi2Te3 nanoparticles. Multi terminal resistance measurements suggest the presence of helical edge
states characteristic of a quantum spin Hall phase; the magnetic field and temperature dependence of the resistance peaks, x-ray photoelectron spectra, scanning tunneling
spectroscopy, and first-principles calculations further support this scenario. These observations highlight a pathway to spintronics and quantum information applications in
graphene-based quantum spin Hall platforms.

3.
The weak intrinsic spin-orbit coupling in graphene can be greatly enhanced by proximity coupling. Here, we report on the proximity-induced spin-orbit coupling in graphene transferred by
hexagonal boron nitride (hBN) onto the topological insulator Bi1.5Sb0.5Te1.7Se1.3 (BSTS) which was grown on a hBN substrate by vapor solid synthesis. Phase coherent transport
measurements, revealing weak localization, allow us to extract the carrier density-dependent phase coherence length lφ. While lφ increases with increasing carrier density in the
hBN/graphene/hBN reference sample, it decreases in graphene/BSTS due to the proximity coupling of BSTS to graphene. The latter behavior results from D’yakonov-Perel’-type spin
scattering in graphene with a large proximity-induced spin-orbit coupling strength of at least 2.5 meV.

4.
We present a method to establish inner point contacts with dimensions as small as 100 nm on hexagonal boron nitride (hBN) encapsulated graphene
heterostructures by pre-patterning the top-hBN in a separate step prior to dry-stacking. 2- and 4-terminal field effect measurements between different
lead combinations are in qualitative agreement with an electrostatic model assuming pointlike contacts. The measured contact resistances are 0.5–1.5 kX
per contact, which is quite low for such small contacts. By applying a perpendicular magnetic field, an insulating behaviour in the quantum Hall regime was
observed, as expected for inner contacts. The fabricated contacts are compatible with high mobility graphene structures and open up the field for the
realization of several electron optical proposals.
5.
We formulate a continuum model to study the low-energy electronic structure of heterostructures formed by graphene on a strong three-dimensional topological insulator (TI) for the cases of both
commensurate and incommensurate stacking. The incommensurability can be due to a twist angle between graphene and the TI surface or a lattice mismatch between the two systems. We find that
the proximity of the TI induces in graphene a strong enhancement of the spin-orbit coupling that can be tuned via the twist angle.

6.
Topological insulators (TIs) represent a new quantum state of matter characterized by robust gapless states inside the insulating bulk gap. The metallic edge states of a two-dimensional
(2D) TI, known as the quantum spin Hall (QSH) effect, are immune to backscattering and carry fully spin-polarized dissipationless currents. However, existing 2D TIs realized in HgTe
and InAs/GaSb suffer from small bulk gaps (<10 meV) well below room temperature, thus limiting their application in electronic and spintronic devices. Here, we report a new 2D TI
comprising a graphene layer sandwiched between two Bi 2Se3 slabs that exhibits a large intrinsic bulk band gap of 30−50 meV, making it viable for room-temperature applications. Distinct
from previous strategies for enhancing the intrinsic spin−orbit coupling effect of the graphene lattice, the present graphene-based TI operates on a new mechanism of strong inversion
between graphene Dirac bands and Bi2Se3 conduction bands. Strain engineering leads to effective control and substantial enhancement of the bulk gap. Recently reported synthesis of
smooth graphene/Bi2Se3 interfaces demonstrates the feasibility of experimental realization of this new 2D TI structure, which holds great promise for nanoscale device applications.

7.
Enhancing the spin−orbit interaction in graphene, via proximity effects with topological insulators, could create a novel 2D system that combines nontrivial spin textures with high electron
mobility. To engineer practical spintronics applications with such graphene/topological insulator (Gr/TI) heterostructures, an understanding of the hybrid spin-dependent properties is
essential. However, to date, despite the large number of experimental studies on Gr/TI heterostructures reporting a great variety of remarkable (spin) transport phenomena, little is known
about the true nature of the spin texture of the interface states as well as their role on the measured properties. Here, we use ab initio simulations and tight-binding models to determine the
precise spin texture of electronic states in graphene interfaced with a Bi 2Se3 topological insulator. Our calculations predict the emergence of a giant spin lifetime anisotropy in the graphene
layer, which should be a measurable hallmark of spin transport in Gr/TI heterostructures and suggest novel types of spin devices.

8.

為了製作出能操縱電子自旋的量子元件，研發出同時擁有良好電子自旋鬆弛時間(spin relaxation time)與自旋軌道耦合(spin orbit coupling)的材料，這是目前所有研究自旋電

子學(Spintronics)團隊的主要目標。目前最主要的問題，在於市面上擁有良好性質的材料石墨烯(graphene)的自旋軌道耦合太弱，限制了它的自旋自由度(spin degree of
freedom)。所以許多實驗團隊都在努力解決這個問題，但是目前提高自旋軌道耦合的方法都會降低石墨烯原本的載子遷移率(mobility)。本研究計畫提供了一個新的方法，
利用 pick up 的技術來堆疊石墨烯、拓樸絕緣體(topological insulator) 和氮化硼(hBN)製作凡德瓦異質結構(Van der Waals heterostructures) ，並測量它的磁場-電阻特性。
我們期望在保有石墨烯原本高載子遷移率的情況下，同時加強石墨烯的自旋軌道耦合，使結構出現弱反局域效應(weak anti-localization)的現象。
Realization of Spin Hall effect in graphene devices is one of the main goal in Spintronics application.
To enhance weak intrinsic spin-orbit coupling in graphene, several theorical works has provided different manners to overcome this challenge .
Here we report the magneto-transport in graphene/Bi2Se3 heterojuction. In this device, we observed weak-localization suppression, an evidence of induced spin-orbit
interaction via proximity effect with topological insulator surface state, as theoretically proposed.
To improve such phenomenon , we present a pre-patterned hBN/graphene/Bi2Se3 heterostructure . These method holds great promise to study all kinds of graphene-
based heterostructure transport.
We expect this device can reveal novel phenomenon further, such as weak-antilocalization or spin Hall effect .