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Gallium Arsenide Laser

The semiconductor laser is constructed from a single crystal of gallium-arsenide with a p-n junction. The n-section is heavily doped with tellurium and the p-section is heavily doped with zinc. When a forward bias is applied, electrons and holes recombine at the junction, emitting photons. At high current, the population inverts and stimulated emission produces coherent laser light in the infrared region. The resonant cavity is formed by cleaving the crystal ends to partially reflect light and provide feedback for lasing.

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3K views4 pages

Gallium Arsenide Laser

The semiconductor laser is constructed from a single crystal of gallium-arsenide with a p-n junction. The n-section is heavily doped with tellurium and the p-section is heavily doped with zinc. When a forward bias is applied, electrons and holes recombine at the junction, emitting photons. At high current, the population inverts and stimulated emission produces coherent laser light in the infrared region. The resonant cavity is formed by cleaving the crystal ends to partially reflect light and provide feedback for lasing.

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bhatchinmay7
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Construction and working of Semiconductor laser (Ga As)

Semi conductor laser is a device whose active medium is a


semiconductor. It has a p-n junction doped in a single crystal of
semiconductor such as gallium-arsenide (Ga As).
Construction:
It is a single crystal of Ga-As and consisting heavily doped n and p-
sections.
n-section is doped with tellurium and the p-section is doped with
zinc.
The doping concentration is very high and is of the order of 1017 to
1019 dopant atoms/cm3.
The p- n junction is connected to a dc power supply in a forward bias
condition.
The resonant cavity is obtained by cleaving (polishing) the end faces
of the junction diode.
Other sides of the p-n junction device are made as rough surfaces to
prevent the leakage of light Smitha M G, Asst Professor, D.O.Physics, RNSIT
Active region

+ p- type
Laser

n- type

Cleaved face-partially reflecting


Cleaved face-Fully reflecting

Smitha M G, Asst Professor, D.O.Physics, RNSIT


Working:

The Ga-As laser diode is subjected to a forward bias current.


Under the influence of the applied voltage, electrons from the n –
section and holes from p –section flow across the junction.
The width of depletion region decreases due to injection of
electrons and holes.
When a hole meets an electron, recombination takes place
resulting in the emission of a photon.
At low forward currents the diode act as an LED.
As the current is increased (applied voltage nearly equal to band
gap voltage), a threshold for lasing will be attained at which time an
active region is formulated very near the junction (depletion layer),
where the population gets inverted.
At this stage, a photon originally released by spontaneous emission
may trigger stimulated emission over a large number of
recombination, leading to the build up of laser radiation of high
power Smitha M G, Asst Professor, D.O.Physics, RNSIT
In case of gallium-arsenide, we get a light radiation in the
infrared region. 8874 Å at room temperature.

Smitha M G, Asst Professor, D.O.Physics, RNSIT

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