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Very High-Speed Switch, Analog Switch Applications

This document provides information on the 2SK669 N-Channel Enhancement Silicon MOSFET including: 1) Its applications are for analog switches, low-pass filters, and ultrahigh-speed switches. It has features such as a large transconductance, enhancement-type structure, and small ON resistance. 2) Specifications for its absolute maximum ratings, electrical characteristics, and package dimensions. Maximum voltages, currents, power dissipation, and temperatures are specified. Metrics like threshold voltage, transconductance, capacitances, and ON resistance are provided. 3) Cautions that applications requiring extremely high reliability should not use this product and that Sanyo is not responsible for failures exceeding rated

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0% found this document useful (0 votes)
55 views

Very High-Speed Switch, Analog Switch Applications

This document provides information on the 2SK669 N-Channel Enhancement Silicon MOSFET including: 1) Its applications are for analog switches, low-pass filters, and ultrahigh-speed switches. It has features such as a large transconductance, enhancement-type structure, and small ON resistance. 2) Specifications for its absolute maximum ratings, electrical characteristics, and package dimensions. Maximum voltages, currents, power dissipation, and temperatures are specified. Metrics like threshold voltage, transconductance, capacitances, and ON resistance are provided. 3) Cautions that applications requiring extremely high reliability should not use this product and that Sanyo is not responsible for failures exceeding rated

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david folosa
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Ordering number:EN2563C

N-Channel Enhancement Silicon MOSFET

2SK669
Very High-Speed Switch,
Analog Switch Applications

Applications Package Dimensions


· Analog switches, low-pass filters, Ultrahigh-speed unit:mm
switches. 2040A
[2SK669] 2.2
4.0
Features
· Large yfs.

3.0
· Enhancemet type. 0.4

1.8
0.5
· Small ON resistance.

0.6

15.0
0.4
0.4

1 2 3
1.3 1.3 1 : Drain
2 : Source

0.7
0.7 3 : Gate
3.0
SANYO : SPA
Specifications 3.8nom

Absolute Maximum Ratings at Ta = 25˚C


Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDS 50 V
Gate-to-Source Voltage VGS ±12 V
Drain Current ID 100 mA
Drain Current(Pulse) IDP 300 mA
Allowable Power Dissipation PD 200 mW
Channel Temperature Tch 125 ˚C
Storage Temperature Tstg –55 to +125 ˚C

Electrical Characteristics at Ta = 25˚C


Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Voltage V(BR)DS ID=10µA, VGS=0 50 V
Gate-to-Source Leakage Current IGSS VGS=10V, VDS=0 0.01 10 nA
Zero-Gate Voltage Drain Current IDSS* VDS=20V, VGS=0V 1.0 µA
Cutoff Voltage VGS(off) VDS=10V, ID=100µA 0.3 0.9 1.5 V
Forward Transfer Admittance | yfs | VDS=10V, ID=50mA, f=1kHz 25 40 mS
Input Capacitance Ciss VDS=10V, VGS=0, f=1MHz 15 pF
Output Capacitance Coss VDS=10V, VGS=0, f=1MHz 6 pF
Reverse Transfer Capacitance Crss VDS=10V, VGS=0, f=1MHz 0.5 pF
Drain-to-Source ON Resistance RDS(on) VDS=10V, ID=10mA 20 Ω

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company


TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42899TH (KT)/N279MO/4237TA, TS No.2563–1/3
2SK669

No.2563–2/3
2SK669

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of April, 1999. Specifications and information herein are subject to
change without notice.

PS No.2563–3/3
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

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