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Silicon NPN Darlington Power Transistors: Description

This document provides product specifications for the 2SD2495 silicon NPN Darlington power transistor from JMnic. It includes descriptions of its TO-220F package and applications for audio, series regulators, and general purposes. Pin assignments and diagrams of the package outline are shown. Absolute maximum ratings and key electrical characteristics like breakdown voltage, saturation voltage, current gain, and switching times are specified.

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Victor Hemz
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84 views

Silicon NPN Darlington Power Transistors: Description

This document provides product specifications for the 2SD2495 silicon NPN Darlington power transistor from JMnic. It includes descriptions of its TO-220F package and applications for audio, series regulators, and general purposes. Pin assignments and diagrams of the package outline are shown. Absolute maximum ratings and key electrical characteristics like breakdown voltage, saturation voltage, current gain, and switching times are specified.

Uploaded by

Victor Hemz
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Product Specification www.jmnic.

com

Silicon NPN Darlington Power Transistors 2SD2495

DESCRIPTION
・With TO-220F package
・Complement to type 2SB1626

APPLICATIONS
・For audio,series regulator and
general purpose applications

PINNING

PIN DESCRIPTION

1 Base

2 Collector

3 Emitter

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 110 V

VCEO Collector-emitter voltage Open base 110 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 6 A

IB Base current 1 A

PC Collector dissipation TC=25℃ 30 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃

JMnic
Product Specification www.jmnic.com

Silicon NPN Darlington Power Transistors 2SD2495

CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO Collector-emitter breakdown voltage IC=50mA ;IB=0 110 V

VCEsat Collector-emitter saturation voltage IC=5A; IB=5mA 2.5 V

VBEsat Emitter-base saturation voltage IC=5A; IB=5mA 3.0 V

ICBO Collector cut-off current VCB=110V; IE=0 0.1 mA

IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA

hFE DC current gain IC=5A ; VCE=4V 5000

fT Transition frequency IC=0.5A ; VCE=12V 60 MHz

COB Collector output capacitance f=1MHz;VCB=10V 55 pF

Switching times

ton Turn-on time 0.8 μs


IC=5A; IB1=-IB2=5mA
ts Storage time 6.2 μs
VCC=30V ,RL=6Ω

tf Fall time 1.1 μs

hFE Classifications
O p Y

5000-12000 6500-20000 15000-30000

JMnic
Product Specification www.jmnic.com

Silicon NPN Darlington Power Transistors 2SD2495

PACKAGE OUTLINE

Fig.2 Outline dimensions

JMnic

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