Created in COMSOL Multiphysics 5.

3D Density-Gradient Simulation of a Nanowire

MOSFET

This model is licensed under the COMSOL Software License Agreement 5.5.
All trademarks are the property of their respective owners. See www.comsol.com/trademarks.
This 3D model of a nanowire MOSFET employs the density-gradient theory to add the
effect of quantum confinement to the conventional drift-diffusion formulation, without
requiring excessively high computational costs. The oxide layer is simulated explicitly with
geometric domains, and quantum confinement at the silicon-oxide interface is accounted
for via a dedicated boundary condition. The density-gradient effective mass is anisotropic.
Various selection utilities are used to simplify the assignment of physics settings and plot
selections. The result matches well with the Id-Vg curves and electron density profiles
published in the reference paper.

Introduction
As the semiconductor fabrication technology progresses to produce smaller and smaller
devices, the effect of quantum confinement becomes more and more important. This
tutorial follows the approach described in Ref. 1 to compute the electron density
distribution and drain current as a function of the gate voltage of a Si nanowire MOSFET
using the density-gradient theory (as reviewed in Ref. 2).

Model Definition
The model computes the DC characteristics and the electron density profile along the
transverse and longitudinal centerlines of a Si nanowire MOSFET, to be compared with
Fig. 2, 4, and 5 in Ref. 1. The effects of changing the value of the longitudinal effective
mass are shown in those figures.

Not all simulation details are given in the paper. Nevertheless, the approach described in
the paper is followed as closely as possible. In particular, the treatment of the potential
barrier at the silicon-oxide interface follows the one discussed in Ref. 3. When a parameter
is not listed, a typical value found in the literature is used in the model. The silicon material
data built in the Semiconductor Module are used, with constant mobility. The gate metal
work function and the drain voltage are selected to best match the Id-Vg curves in the
reference paper. The section Modeling Instructions lists all the parameters used in the
model.

The channel of the simulated structure is formed by a Si nanowire with a 3.2 nm square
cross section, surrounded by an oxide layer of thickness 0.8 nm. The length of the channel
is 4 nm. (See Fig. 1 in Ref. 1.) The source and drain lengths are arbitrarily set at 15 nm,
long enough to provide the comparison with the figures in the reference paper.

The oxide layer is modeled explicitly as domains using the Charge Conservation domain
condition. The quantum confinement effect for the silicon-oxide interface is added by

2 | 3D DENSITY-GRADIENT SIMULATION OF A NANOWIRE MOSFET

selecting the Potential barrier option for the Insulator Interface boundary condition, based
on Ref. 3. The temperature is assumed to be 300 K. Maxwell-Boltzmann statistics is used,
as indicated by Eq. (2) in Ref. 1.

The density-gradient effective mass is anisotropic in this model. This is done by selecting
the Diagonal option under the section Material Properties, Density-Gradient in the settings
window for the Semiconductor Material Model domain condition.

For the ease of meshing and plotting along the centerlines, some extra layers are created
in the 3D geometry. Various Selection functionalities under both the Geometry and the
Definitions nodes are then used to group the multiple geometric entities into different
regions for convenient assignment of domain conditions, boundary conditions, and plot
selections.

To reduce the computation time and file size, a relatively coarse mesh is used in this
tutorial. Interested users are encouraged to perform mesh refinement studies by
parameterizing the settings of the Distribution nodes used in the meshing sequence.

See the comments in the section Modeling Instructions for more detailed discussions on
the model construction, meshing techniques, solution processes, and result visualization.

3 | 3D DENSITY-GRADIENT SIMULATION OF A NANOWIRE MOSFET

Results and Discussion
Figure 1 shows the drain current as a function of the gate voltage for a set of longitudinal
effective mass values, to be compared with Fig. 2 in Ref. 1. The general trend and
subthreshold slopes compare well, with some minor differences in the magnitude of the
current.

Figure 1: Drain current versus gate voltage curves for a few effective mass values.

4 | 3D DENSITY-GRADIENT SIMULATION OF A NANOWIRE MOSFET

Figure 2 and Figure 3 plot the electron concentration profiles along the longitudinal and
transverse centerlines, which compares well with Fig. 4 and 5 in the reference paper.

Figure 2: Electron concentration profile along the longitudinal centerline.

Figure 3: Electron concentration profile along the transverse centerline.

5 | 3D DENSITY-GRADIENT SIMULATION OF A NANOWIRE MOSFET

References
1. A.R. Brown, A. Martinez, N. Seoane, and A. Asenov, “Comparison of Density Gradient
and NEGF for 3D Simulation of a Nanowire MOSFET,” Proc. 2009 Spanish Conf. Elec.
Dev., p. 140, Feb. 11–13, 2009.

2. M.G. Ancona, “Density-gradient theory: a macroscopic approach to quantum

confinement and tunneling in semiconductor devices,” J. Comput. Electron., vol. 10,
p. 65, 2011.

3. S. Jin, Y.J. Park, and H.S. Min, “Simulation of Quantum Effects in the Nano-scale
Semiconductor Device,” J. Semicond. Tech. Sci., vol. 4, no. 1, p. 32, 2004.

Application Library path: Semiconductor_Module/Transistors/

nanowire_density_gradient_3d

Modeling Instructions
From the File menu, choose New.

NEW
In the New window, click Model Wizard.

MODEL WIZARD
1 In the Model Wizard window, click 3D.
2 In the Select Physics tree, select Semiconductor>Semiconductor (semi).
3 Click Add.
4 Click Study.
The Semiconductor Equilibrium study step is suitable either to solve for systems known
to be in thermal equilibrium, or, in this case, to provide a good initial condition for
subsequent gate voltage sweeps.
5 In the Select Study tree, select Preset Studies for Selected Physics Interfaces>
Semiconductor Equilibrium.
6 Click Done.

6 | 3D DENSITY-GRADIENT SIMULATION OF A NANOWIRE MOSFET

GEOMETRY 1
The Model Wizard starts the COMSOL Desktop at the Geometry node. Use this chance
to select a convenient length unit. Then enter some dimensional parameters for building
the geometry.

1 In the Model Builder window, under Component 1 (comp1) click Geometry 1.

2 In the Settings window for Geometry, locate the Units section.
3 From the Length unit list, choose nm.

GLOBAL DEFINITIONS

Parameters 1
1 In the Model Builder window, under Global Definitions click Parameters 1.
2 In the Settings window for Parameters, type Parameters 1: Geometry in the Label text
field.
3 Locate the Parameters section. In the table, enter the following settings:

Name Expression Value Description

Lgate 4[nm] 4E-9 m Gate length
Wchannel 3.2[nm] 3.2E-9 m Channel width
dOx 0.8[nm] 8E-10 m Oxide thickness
Lsource 15[nm] 1.5E-8 m Source length
Ldrain 15[nm] 1.5E-8 m Drain length
Ltot Lsource+Lgate+Ldrain 3.4E-8 m Total length
Wtot Wchannel+dOx*2 4.8E-9 m Total width

Start building the geometry. Add some extra layers and lines for meshing and plotting
purposes. Use the various Selection functionalities under both the Geometry and the
Definitions nodes to group the multiple geometric entities into different regions for
convenient assignment of domain conditions, boundary conditions, and plot selections.

GEOMETRY 1

Work Plane 1 (wp1)

1 In the Geometry toolbar, click Work Plane.
2 In the Settings window for Work Plane, locate the Plane Definition section.
3 From the Plane list, choose yz-plane.
4 In the x-coordinate text field, type -Lsource-Lgate/2.

7 | 3D DENSITY-GRADIENT SIMULATION OF A NANOWIRE MOSFET

Plane Geometry
In the Model Builder window, click Plane Geometry.

Work Plane 1 (wp1)>Square 1 (sq1)

1 In the Work Plane toolbar, click Square.
2 In the Settings window for Square, locate the Size section.
3 In the Side length text field, type Wtot.
4 Locate the Position section. From the Base list, choose Center.
5 Click to expand the Layers section. In the table, enter the following settings:

Layer name Thickness (nm)

Layer 1 Wtot/2

6 Select the Layers to the left check box.

Work Plane 1 (wp1)>Square 2 (sq2)

1 In the Work Plane toolbar, click Square.
2 In the Settings window for Square, locate the Size section.
3 In the Side length text field, type Wchannel.
4 Locate the Position section. From the Base list, choose Center.
5 In the Model Builder window, click Geometry 1.

Extrude 1 (ext1)
1 In the Geometry toolbar, click Extrude.
2 In the Settings window for Extrude, type Extrude 1: Source in the Label text field.
3 Locate the General section. From the Extrude from list, choose Faces.
4 On the object wp1, select Boundaries 3, 4, 6, and 7 only.
5 From the Input object handling list, choose Keep.
6 Locate the Distances section. In the table, enter the following settings:

Distances (nm)
Lsource

7 Locate the Selections of Resulting Entities section. Select the Resulting objects selection
check box.
8 From the Show in physics list, choose All levels.
9 Find the Cumulative selection subsection. Click New.

8 | 3D DENSITY-GRADIENT SIMULATION OF A NANOWIRE MOSFET

10 In the New Cumulative Selection dialog box, type Si in the Name text field.
11 Click OK.
12 Click Build Selected.

Extrude 1: Source 1 (ext2)

1 Right-click Extrude 1: Source and choose Duplicate.
2 In the Settings window for Extrude, type Extrude 2: Channel in the Label text field.
3 Locate the General section. Click Clear Selection.
4 On the object ext1, select Boundaries 17–20 only.
5 Locate the Distances section. Click Clear Table.
6 In the table, enter the following settings:

Distances (nm)
Lgate/2
Lgate

7 Locate the Selections of Resulting Entities section. From the Show in physics list, choose
Domain selection.
8 Click Build Selected.

Extrude 2: Channel 1 (ext3)

1 Right-click Extrude 2: Channel and choose Duplicate.
2 In the Settings window for Extrude, type Extrude 3: Drain in the Label text field.
3 Locate the General section. Click Clear Selection.
4 On the object ext2, select Boundaries 33–36 only.
5 Locate the Distances section. Click Clear Table.
6 In the table, enter the following settings:

Distances (nm)
Ldrain

7 Locate the Selections of Resulting Entities section. From the Show in physics list, choose
All levels.
8 Click Build Selected.

Extrude 1: Source 1 (ext4)

1 In the Model Builder window, under Component 1 (comp1)>Geometry 1 right-click
Extrude 1: Source (ext1) and choose Duplicate.

9 | 3D DENSITY-GRADIENT SIMULATION OF A NANOWIRE MOSFET

2 In the Settings window for Extrude, type Extrude 4: Source oxide in the Label text
field.
3 Locate the General section. Click Clear Selection.
4 On the object wp1, select Boundaries 1, 2, 5, and 8 only.
5 Locate the Selections of Resulting Entities section. From the Show in physics list, choose
Off.
6 Find the Cumulative selection subsection. Click New.
7 In the New Cumulative Selection dialog box, type Oxide in the Name text field.
8 Click OK.
9 Click Build Selected.

Extrude 2: Channel 1 (ext5)

1 In the Model Builder window, under Component 1 (comp1)>Geometry 1 right-click
Extrude 2: Channel (ext2) and choose Duplicate.
2 In the Settings window for Extrude, type Extrude 5: Gate oxide in the Label text field.
3 Locate the General section. Click Clear Selection.
4 On the object ext4, select Boundaries 25–28 only.
5 Locate the Selections of Resulting Entities section. Find the Cumulative selection
subsection. From the Contribute to list, choose Oxide.
6 Click Build Selected.

Extrude 3: Drain 1 (ext6)

1 In the Model Builder window, under Component 1 (comp1)>Geometry 1 right-click
Extrude 3: Drain (ext3) and choose Duplicate.
2 In the Settings window for Extrude, type Extrude 6: Drain oxide in the Label text
field.
3 Locate the General section. Click Clear Selection.
4 On the object ext5, select Boundaries 49–52 only.
5 Locate the Selections of Resulting Entities section. From the Show in physics list, choose
Off.
6 Find the Cumulative selection subsection. From the Contribute to list, choose Oxide.
7 Click Build All Objects.

Adjacent 1
1 In the Definitions toolbar, click Adjacent.

10 | 3D DENSITY-GRADIENT SIMULATION OF A NANOWIRE MOSFET

2 In the Settings window for Adjacent, locate the Input Entities section.
3 Under Input selections, click Add.
4 In the Add dialog box, select Extrude 5: Gate oxide in the Input selections list.
5 Click OK.

Adjacent 2
1 Right-click Adjacent 1 and choose Duplicate.
2 In the Settings window for Adjacent, locate the Input Entities section.
3 In the Input selections list, select Extrude 5: Gate oxide.
4 Under Input selections, click Delete.
5 Under Input selections, click Add.
6 In the Add dialog box, select Oxide in the Input selections list.
7 Click OK.

Intersection 1
1 In the Definitions toolbar, click Intersection.
2 In the Settings window for Intersection, locate the Geometric Entity Level section.
3 From the Level list, choose Boundary.
4 Locate the Input Entities section. Under Selections to intersect, click Add.
5 In the Add dialog box, select Adjacent 1 in the Selections to intersect list.
6 Click OK.
7 In the Settings window for Intersection, locate the Input Entities section.
8 Under Selections to intersect, click Add.
9 In the Add dialog box, select Adjacent 2 in the Selections to intersect list.
10 Click OK.
11 In the Settings window for Intersection, type Gate in the Label text field.

Union 1
1 In the Definitions toolbar, click Union.
2 In the Settings window for Union, type Source+Drain in the Label text field.
3 Locate the Input Entities section. Under Selections to add, click Add.
4 In the Add dialog box, select Extrude 1: Source in the Selections to add list.
5 Click OK.
6 In the Settings window for Union, locate the Input Entities section.

11 | 3D DENSITY-GRADIENT SIMULATION OF A NANOWIRE MOSFET

7 Under Selections to add, click Add.
8 In the Add dialog box, select Extrude 3: Drain in the Selections to add list.
9 Click OK.

Box 1
1 In the Definitions toolbar, click Box.
2 In the Settings window for Box, type Box 1: x axis in the Label text field.
3 Locate the Geometric Entity Level section. From the Level list, choose Edge.
4 Locate the Box Limits section. In the y minimum text field, type -0.1.
5 In the y maximum text field, type 0.1.
6 In the z minimum text field, type -0.1.
7 In the z maximum text field, type 0.1.
8 Locate the Output Entities section. From the Include entity if list, choose
Entity inside box.

Box 1: x axis 1
1 Right-click Box 1: x axis and choose Duplicate.
2 In the Settings window for Box, type Box 2: z axis in the Label text field.
3 Locate the Box Limits section. In the x minimum text field, type -0.1.
4 In the x maximum text field, type 0.1.
5 In the z minimum text field, type -inf.
6 In the z maximum text field, type inf.

Use the built-in silicon material for the silicon domains.

MATERIALS
In the Home toolbar, click Windows and choose Add Material from Library.

ADD MATERIAL
1 Go to the Add Material window.
2 In the tree, select Semiconductors>Si - Silicon.
3 Click Add to Component in the window toolbar.
4 In the Home toolbar, click Add Material to close the Add Material window.

12 | 3D DENSITY-GRADIENT SIMULATION OF A NANOWIRE MOSFET

MATERIALS

Si - Silicon (mat1)
1 In the Settings window for Material, locate the Geometric Entity Selection section.
2 From the Selection list, choose Si.

Parameters 2
1 In the Home toolbar, click Parameters and choose Add>Parameters.
Configure physics settings (first enter some physics parameters). Select the density-
gradient formulation from the Discretization section of the main physics settings
window. Specify the anisotropic density-gradient effective mass in the settings window
for the Semiconductor Material Model domain feature.
2 In the Settings window for Parameters, type Parameters 2: Physics in the Label text
field.
3 Locate the Parameters section. In the table, enter the following settings:

Name Expression Value Description

T0 300[K] 300 K Temperature
fmx 0.8 0.8 Longitudinal DG
effective mass
fmy 0.12 0.12 Transverse DG
effective mass
mx fmx*me_const 7.2875E-31 kg Longitudinal DG
effective mass
my fmy*me_const 1.0931E-31 kg Transverse DG
effective mass
mz my 1.0931E-31 kg Transverse DG
effective mass
epsrOx 3.9 3.9 Oxide dielectric
constant
mox 0.5*me_const 4.5547E-31 kg Oxide DG effective
mass
moxstar 0.22*me_const 2.0041E-31 kg Oxide DG effective
mass
PhiBox 3.15[V] 3.15 V Oxide potential
barrier
Nd 1e20[cm^-3] 1E26 1/m³ Doping
cp 1 1 Continuation parameter
for doping
Vd 0.05[V] 0.05 V Drain voltage

13 | 3D DENSITY-GRADIENT SIMULATION OF A NANOWIRE MOSFET

Name Expression Value Description
Phig 4.5[V] 4.5 V Gate metal work
function
Vg 0.8[V] 0.8 V Gate voltage

SEMICONDUCTOR (SEMI)
1 In the Model Builder window, under Component 1 (comp1) click Semiconductor (semi).
2 In the Settings window for Semiconductor, locate the Model Properties section.
3 From the Solution list, choose Majority carriers only.
4 Click to expand the Discretization section. From the Formulation list, choose
Finite element density-gradient (quadratic shape function).

Semiconductor Material Model 1

1 In the Model Builder window, under Component 1 (comp1)>Semiconductor (semi) click
Semiconductor Material Model 1.
2 In the Settings window for Semiconductor Material Model, locate the Model Input section.
3 In the T text field, type T0.
4 Locate the Material Properties, Density-Gradient section. From the list, choose Diagonal.
5 In the meDG table, enter the following settings:

mx 0 0
0 my 0
0 0 mz

Apply the Charge Conservation domain condition to model the oxide layer explicitly. Use
the Potential barrier option to include quantum confinement effects at the silicon-oxide
interfaces.

Charge Conservation 1
1 In the Physics toolbar, click Domains and choose Charge Conservation.
2 In the Settings window for Charge Conservation, locate the Domain Selection section.
3 From the Selection list, choose Oxide.
4 Locate the Electric Field section. From the r list, choose User defined. In the associated
text field, type epsrOx.

Insulator Interface 1
1 In the Model Builder window, click Insulator Interface 1.

14 | 3D DENSITY-GRADIENT SIMULATION OF A NANOWIRE MOSFET

2 In the Settings window for Insulator Interface, locate the Density-Gradient section.
3 From the Formulation list, choose Potential barrier.
4 In the meOx text field, type mox.
5 In the meOx* text field, type moxstar.
6 In the nOx text field, type PhiBox.

Add doping and metal contacts.

Analytic Doping Model 1

1 In the Physics toolbar, click Domains and choose Analytic Doping Model.
2 In the Settings window for Analytic Doping Model, locate the Domain Selection section.
3 From the Selection list, choose Source+Drain.
4 Locate the Impurity section. From the Impurity type list, choose Donor doping (n-type).
5 In the ND0 text field, type Nd*cp.

Metal Contact 1
1 In the Physics toolbar, click Boundaries and choose Metal Contact.
2 In the Settings window for Metal Contact, type Metal Contact 1: Source in the Label
text field.
3 Locate the Boundary Selection section. From the Selection list, choose Extrude 1: Source.

Metal Contact 2
1 In the Physics toolbar, click Boundaries and choose Metal Contact.
2 In the Settings window for Metal Contact, type Metal Contact 2: Drain in the Label
text field.
3 Locate the Boundary Selection section. From the Selection list, choose Extrude 3: Drain.
4 Locate the Terminal section. In the V0 text field, type Vd.

Terminal 1
1 In the Physics toolbar, click Boundaries and choose Terminal.
2 In the Settings window for Terminal, type Terminal 1: Gate in the Label text field.
3 Locate the Boundary Selection section. From the Selection list, choose Gate.
4 Locate the Terminal section. In the c text field, type Phig.
5 From the Terminal type list, choose Voltage.
6 In the V0 text field, type Vg.

15 | 3D DENSITY-GRADIENT SIMULATION OF A NANOWIRE MOSFET

Create the mesh. Use the Distribution feature to arrange an efficient Swept mesh that
minimizes the number of mesh elements while still resolving large gradients in the solution
fields. To reduce the computation time and file size, a relatively coarse mesh is used in this
tutorial. Interested users are encouraged to perform mesh refinement studies by
parameterizing the settings of the Distribution nodes.

MESH 1

Mapped 1
1 In the Model Builder window, under Component 1 (comp1) right-click Mesh 1 and choose
More Operations>Mapped.
2 Select Boundaries 1, 4, 8, 11, 15, 18, 21, and 24 only.
3 In the Settings window for Mapped, click to expand the Reduce Element Skewness section.
4 Select the Adjust edge mesh check box.

Distribution 1
1 Right-click Mapped 1 and choose Distribution.
2 Select Edges 9, 20, 21, 24, 27, and 31 only.
3 In the Settings window for Distribution, locate the Distribution section.
4 From the Distribution type list, choose Predefined.
5 In the Number of elements text field, type 3.
6 In the Element ratio text field, type 2.

Distribution 2
1 Right-click Distribution 1 and choose Duplicate.
2 In the Settings window for Distribution, locate the Edge Selection section.
3 Click Clear Selection.
4 Select Edges 10, 12, 13, 15, 23, and 33 only.
5 Locate the Distribution section. Select the Reverse direction check box.

Distribution 3
1 In the Model Builder window, right-click Mapped 1 and choose Distribution.
2 Select Edges 5, 17, 26, and 34 only.
3 In the Settings window for Distribution, locate the Distribution section.
4 In the Number of elements text field, type 1.

16 | 3D DENSITY-GRADIENT SIMULATION OF A NANOWIRE MOSFET

Swept 1
In the Model Builder window, right-click Mesh 1 and choose Swept.

Distribution 1
1 In the Model Builder window, right-click Swept 1 and choose Distribution.
2 In the Settings window for Distribution, locate the Domain Selection section.
3 From the Selection list, choose Extrude 2: Channel.
4 Locate the Distribution section. In the Number of elements text field, type 3.

Distribution 2
1 In the Model Builder window, right-click Swept 1 and choose Distribution.
2 In the Settings window for Distribution, locate the Domain Selection section.
3 From the Selection list, choose Source+Drain.
4 Locate the Distribution section. From the Distribution type list, choose Predefined.
5 In the Number of elements text field, type 10.
6 In the Element ratio text field, type 3.
7 Select the Symmetric distribution check box.
8 Click Build All.

The Semiconductor Equilibrium study step provides a good initial condition for subsequent
gate voltage sweeps. Use the Auxiliary sweep feature to ramp up the doping concentrations
from small values in order to achieve convergence. Add a Stationary study step to sweep
the gate voltage for a set of longitudinal DG effective mass values.

STUDY 1

Step 1: Semiconductor Equilibrium

1 In the Model Builder window, under Study 1 click Step 1: Semiconductor Equilibrium.
2 In the Settings window for Semiconductor Equilibrium, click to expand the
Study Extensions section.
3 Select the Auxiliary sweep check box.
4 Click Add.
5 In the table, enter the following settings:

Parameter name Parameter value list Parameter unit

cp (Continuation parameter for 10^range(-12,4,0)
doping)

17 | 3D DENSITY-GRADIENT SIMULATION OF A NANOWIRE MOSFET

Stationary
1 In the Study toolbar, click Study Steps and choose Stationary>Stationary.
2 In the Settings window for Stationary, click to expand the Study Extensions section.
3 Select the Auxiliary sweep check box.
4 From the Sweep type list, choose All combinations.
5 Click Add.
6 In the table, enter the following settings:

Parameter name Parameter value list Parameter unit

fmx (Longitudinal DG effective 0.8 0.5 0.3 0.2 0.1
mass)

7 Click Add.
8 In the table, enter the following settings:

Parameter name Parameter value list Parameter unit

Vg (Gate voltage) range(0.8,-0.1,0.4) 0.295 V
range(0.2,-0.1,-0.01)

9 From the Reuse solution from previous step list, choose Auto.
10 In the Study toolbar, click Compute.

Plot the Id-Vg curve to be compared with Fig. 2 in the reference paper.

RESULTS

1D Plot Group 6
1 In the Home toolbar, click Add Plot Group and choose 1D Plot Group.
2 In the Settings window for 1D Plot Group, type Id-Vg in the Label text field.
3 Locate the Data section. From the Parameter selection (fmx) list, choose Manual.
4 In the Parameter indices (1-5) text field, type range(1,4).
5 Locate the Axis section. Select the Manual axis limits check box.
6 In the x minimum text field, type 0.
7 In the x maximum text field, type 0.8.
8 In the y minimum text field, type 1e-10.
9 In the y maximum text field, type 1e-4.
10 Select the y-axis log scale check box.

18 | 3D DENSITY-GRADIENT SIMULATION OF A NANOWIRE MOSFET

11 Locate the Legend section. From the Position list, choose Lower right.

Global 1
1 Right-click Id-Vg and choose Global.
2 In the Settings window for Global, locate the y-Axis Data section.
3 In the table, enter the following settings:

Expression Unit Description

semi.I0_2 A Id

4 Click to expand the Coloring and Style section. In the Width text field, type 2.
5 In the Id-Vg toolbar, click Plot.

Plot the electron concentration along the longitudinal center line to be compared with
Fig. 4 in the reference paper.

1D Plot Group 7
1 In the Home toolbar, click Add Plot Group and choose 1D Plot Group.
2 In the Settings window for 1D Plot Group, type n(x) in the Label text field.
3 Locate the Data section. From the Parameter selection (Vg) list, choose From list.
4 In the Parameter values (Vg (V)) list, select 0.295.

19 | 3D DENSITY-GRADIENT SIMULATION OF A NANOWIRE MOSFET

5 Locate the Axis section. Select the Manual axis limits check box.
6 In the x minimum text field, type -10.
7 In the x maximum text field, type 10.
8 In the y minimum text field, type 1e17.
9 In the y maximum text field, type 1e21.
10 Select the y-axis log scale check box.
11 Locate the Legend section. From the Position list, choose Lower right.

Line Graph 1
1 Right-click n(x) and choose Line Graph.
2 In the Settings window for Line Graph, locate the Selection section.
3 From the Selection list, choose Box 1: x axis.
4 Locate the y-Axis Data section. In the Expression text field, type semi.N.
5 In the Unit field, type 1/cm^3.
6 Locate the x-Axis Data section. From the Parameter list, choose Expression.
7 In the Expression text field, type x.
8 Click to expand the Coloring and Style section. In the Width text field, type 2.
9 Click to expand the Legends section. Select the Show legends check box.

20 | 3D DENSITY-GRADIENT SIMULATION OF A NANOWIRE MOSFET

10 In the n(x) toolbar, click Plot.

Plot the electron concentration along the transverse center line to be compared with Fig.
4 in the reference paper.

n(x) 1
1 In the Model Builder window, right-click n(x) and choose Duplicate.
2 In the Model Builder window, click n(x) 1.
3 In the Settings window for 1D Plot Group, type n(z) in the Label text field.
4 Locate the Axis section. In the x minimum text field, type -1.6.
5 In the x maximum text field, type 1.6.
6 In the y minimum text field, type 4e15.
7 In the y maximum text field, type 4e18.
8 Locate the Legend section. From the Position list, choose Lower middle.

Line Graph 1
1 In the Model Builder window, click Line Graph 1.
2 In the Settings window for Line Graph, locate the Selection section.
3 Click Clear Selection.
4 From the Selection list, choose Box 2: z axis.

21 | 3D DENSITY-GRADIENT SIMULATION OF A NANOWIRE MOSFET

5 Locate the x-Axis Data section. In the Expression text field, type z.
6 In the n(z) toolbar, click Plot.

Create a fancy 3D plot for the model thumbnail.

Electron Concentration (semi)

1 In the Model Builder window, click Electron Concentration (semi).
2 In the Settings window for 3D Plot Group, locate the Data section.
3 From the Parameter value (fmx) list, choose 0.8.
4 From the Parameter value (Vg (V)) list, choose 0.5.
5 Locate the Plot Settings section. Clear the Plot dataset edges check box.

Volume 1
1 In the Model Builder window, expand the Electron Concentration (semi) node.
2 Right-click Volume 1 and choose Disable.

Slice 1
1 In the Model Builder window, right-click Electron Concentration (semi) and choose Slice.
2 In the Settings window for Slice, locate the Expression section.
3 In the Expression text field, type semi.log10N.

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4 Locate the Plane Data section. From the Plane list, choose ZX-planes.
5 In the Planes text field, type 1.

Slice 2
1 Right-click Slice 1 and choose Duplicate.
2 In the Settings window for Slice, locate the Plane Data section.
3 From the Plane list, choose YZ-planes.
4 In the Planes text field, type 7.
5 Click to expand the Inherit Style section. From the Plot list, choose Slice 1.

Arrow Volume 1
1 In the Model Builder window, right-click Electron Concentration (semi) and choose
Arrow Volume.
2 In the Settings window for Arrow Volume, click Replace Expression in the upper-right
corner of the Expression section. From the menu, choose Component 1>Semiconductor>
Currents and charge>semi.JX,...,semi.JZ - Total current density, nodal value.
3 Locate the Arrow Positioning section. Find the Y grid points subsection. In the Points text
field, type 5.
4 Find the Z grid points subsection. In the Points text field, type 19.
5 Locate the Coloring and Style section. From the Color list, choose Black.

Isosurface 1
1 Right-click Electron Concentration (semi) and choose Isosurface.
2 In the Settings window for Isosurface, locate the Expression section.
3 In the Expression text field, type V.
4 Locate the Levels section. In the Total levels text field, type 10.
5 Locate the Coloring and Style section. From the Color table list, choose GrayScale.
6 Clear the Color legend check box.

Filter 1
1 Right-click Isosurface 1 and choose Filter.
2 In the Settings window for Filter, locate the Element Selection section.
3 In the Logical expression for inclusion text field, type -5e-11<y.

23 | 3D DENSITY-GRADIENT SIMULATION OF A NANOWIRE MOSFET

4 In the Electron Concentration (semi) toolbar, click Plot.

24 | 3D DENSITY-GRADIENT SIMULATION OF A NANOWIRE MOSFET