Scribd
Upload
24 views

Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

The document provides a product specification for the SavantIC Semiconductor 2SB595 silicon PNP power transistor. It includes descriptions of its TO-220C package, high breakdown voltage of -100V, and low collector saturation voltage of -2.0V. Its applications are listed as power amplifier output stages, particularly for 30W high fidelity audio amplifiers. Pin assignments, absolute maximum ratings, key electrical characteristics, and package outline are also detailed in the 3 page specification sheet.

Uploaded by

Carlos
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
24 views

Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

The document provides a product specification for the SavantIC Semiconductor 2SB595 silicon PNP power transistor. It includes descriptions of its TO-220C package, high breakdown voltage of -100V, and low collector saturation voltage of -2.0V. Its applications are listed as power amplifier output stages, particularly for 30W high fidelity audio amplifiers. Pin assignments, absolute maximum ratings, key electrical characteristics, and package outline are also detailed in the 3 page specification sheet.

Uploaded by

Carlos
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 4

SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB595

DESCRIPTION
·With TO-220C package
·Complement to type 2SD525
·High breakdown voltage :VCEO=-100V
·Low collector saturation volage
: VCE(sat)=-2.0V(Max)

APPLICATIONS
·Power amplifier applications
·Recommend for 30W high fidelity
audio frequency amplifier output stage

PINNING

PIN DESCRIPTION

1 Emitter

Collector;connected to
2
mounting base

3 Base

Absolute maximum ratings(Tc=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -100 V

VCEO Collector-emitter voltage Open base -100 V

VEBO Emitter-base voltage Open collector -5 V

IC Collector current -5 A

IE Emitter current -5 A

IB Base current -4 A

PC Collectorl power dissipation TC=25 40 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB595

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -100 V

V(BR)EBO Emitter-base breakdown votage IE=-10mA; IC=0 -5 V

VCEsat Collector-emitter saturation voltage IC=-4A;IB=-0.4 A -2.0 V

VBE Base-emitter on voltage IC=-4A ; VCE=-5V -1.5 V

ICBO Collector cut-off current VCB=-100V; IE=0 -100 µA

IEBO Emitter cut-off current VEB=-5V; IC=0 -1 mA

hFE-1 DC current gain IC=-1A ; VCE=-5V 40 240

hFE-2 DC current gain IC=-4A ; VCE=-5V 20

fT Transition frequency IC=-1A ; VCE=-5V 5 MHz

COB Output capacitance IE=0; VCB=-10V;f=1MHz 270 pF

hFE-1 classifications
R O Y

40-80 70-140 120-240

2
SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB595

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)

3
SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB595

You might also like