Scribd
Upload
181 views

C4977 - ETCf GD

This document provides specifications for the ISC 2SC4977 silicon NPN power transistor. It can withstand collector-emitter voltages up to 400V, has fast switching speeds, and a typical saturation voltage of 0.8V or less at 4A collector current. It is designed for high-voltage, high-speed power switching applications like power supplies, inverters, and DC-DC converters operating at 115V and 220V. Absolute maximum ratings and electrical characteristics are provided.

Uploaded by

Carlos
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
181 views

C4977 - ETCf GD

This document provides specifications for the ISC 2SC4977 silicon NPN power transistor. It can withstand collector-emitter voltages up to 400V, has fast switching speeds, and a typical saturation voltage of 0.8V or less at 4A collector current. It is designed for high-voltage, high-speed power switching applications like power supplies, inverters, and DC-DC converters operating at 115V and 220V. Absolute maximum ratings and electrical characteristics are provided.

Uploaded by

Carlos
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SC4977

DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min)
·Fast Switching Speed
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max.)@ IC= 4.0A

APPLICATIONS
·Designed for use in high-voltage, high-speed , power
switching in inductive circuit , they are particularly suited
for 115 and 220V switchmode applications such as swit-
ching regulator’s, inverters, DC-DC converter.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 450 V

VCEO Collector-Emitter Voltage 400 V

VEBO Emitter-Base Voltage 8 V

IC Collector Current-Continuous 7 A

ICM Collector Current-Peak 14 A

IB Base Current-Continuous 2 A

Collector Power Dissipation


PC 40 W
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 3.125 ℃/W

isc Website：www.iscsemi.cn

Free Datasheet http://www.datasheet4u.com/


INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SC4977

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 400 V

V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 450 V

V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 8 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A 0.8 V

VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.2 V

ICBO Collector Cutoff Current VCB= 450V; IE= 0 100 μA

IEBO Emitter Cutoff Current VEB= 8V; IC= 0 100 μA

hFE DC Current Gain IC= 4A ; VCE= 5V 10

Switching times

ton Turn-on Time 1.0 μs

IC= 5A , IB1= -IB2=1A


tstg Storage Time 2.5 μs
RL= 30Ω; VCC= 150V

tf Fall Time 0.5 μs

isc Website：www.iscsemi.cn 2

You might also like