P1603BV

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

30V 16mΩ @VGS = 10V 10A

SOP- 08

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Gate-Source Voltage VGS ±20 V
TA = 25 °C 10
Continuous Drain Current ID
TA = 70 °C 8
1
A
Pulsed Drain Current IDM 55
Avalanche Current IAS 23
Avalanche Energy L = 0.1mH EAS 26 mJ
TA = 25 °C 2.6
Power Dissipation PD W
TA = 70 °C 1.6
Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RqJC 25
°C / W
Junction-to-Ambient RqJA 50
1
Pulse width limited by maximum junction temperature.

Ver 1.0 1 2012/4/13

P1603BV
N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 30
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1.0 1.8 2.5
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA
VDS = 24V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS mA
VDS = 20V, VGS = 0V , TJ = 125 °C 10
On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 55 A
Drain-Source On-State VGS = 4.5V, ID = 6A 19.4 25.0
RDS(ON) mΩ
Resistance1 VGS = 10V, ID = 8A 11.8 16.0
Forward Transconductance1 gfs VDS = 5V, ID = 8A 40 S
DYNAMIC
Input Capacitance Ciss 560
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 179 pF
Reverse Transfer Capacitance Crss 100
Gate Resistance Rg VGS = 0V, f = 1MHz 2 Ω
Qg(VGS = 10V) 12
Total Gate Charge2
Qg(VGS = 4.5V) VDS = 0.5V(BR)DSS, 5
nC
Gate-Source Charge 2 Qgs ID = 8A, VGS = 10V 2.1
Gate-Drain Charge2 Qgd 3.5
2 td(on)
Turn-On Delay Time 7
2 tr
Rise Time VDS = 15V, RL = 1.5Ω 29
nS
Turn-Off Delay Time 2 td(off) VGS = 10V, ID @ 10A, RGEN = 6Ω 45
Fall Time2 tf 18
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current IS 2.6 A
1 VSD IF = 8A, VGS = 0V
Forward Voltage 1 V
Reverse Recovery Time trr 24 nS
IF = 8A, dlF/dt = 100A / mS
Reverse Recovery Charge Qrr 29 nC
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.

Ver 1.0 2 2012/4/13

P1603BV
N-Channel Enhancement Mode MOSFET

Ver 1.0 3 2012/4/13

P1603BV
N-Channel Enhancement Mode MOSFET

Ver 1.0 4 2012/4/13

P1603BV
N-Channel Enhancement Mode MOSFET

Ver 1.0 5 2012/4/13