CHAPTER 4

MOSFET Circuit

MOSFET circuit is the core of inverter system in which isolate the low voltage dc
sector from high ac, MOSFET device is playing the major roll in this part due to its
characteristics, that is why, its a good idea to have an over view about such device before
introducing the circuit.

4.1 MOSFET Principals:-

Figure 4.1: MOSFET- Symbol, Construction, and Working

Power Electronic Switching components like BJT, MOSFET, IGBT, SCR, TRIAC,

etc. are essential devices used in the design of many circuits ranging from a simple driver
circuit to complex Power rectifiers and Inverters. The most basic of them all is the BJT, and
we have already learned the working of BJT Transistors. Next to BJT, the widely used power
switches are MOSFETs. Compared to BJT, MOSFET can handle high voltage and high
current, hence it is popular among high power applications. In this article, we will learn the
basics of MOSFET, its internal construction, how it works, and how to use them in your
circuit designs. If you want to skip the theory, you can check out the article on popular
MOSFETs and where to use them to speed your part selection and design process.
 

4.2 What is a MOSFET?

MOSFET stands for Metal Oxide Field Effect Transistor, MOSFET was invented
to overcome the disadvantages present in FETs like high drain resistance, moderate input
impedance, and slower operation. So a MOSFET can be called the advanced form of FET. In
some cases, MOSFETs are also be called IGFET (Insulated Gate Field Effect
Transistor). Practically speaking, MOSFET is a voltage-controlled device, meaning by
applying a rated voltage to the gate pin, the MOSFET will start conducting through the Drain
and Source pin. We will get into details later in this article.

The main difference between FET and MOSFET is that MOSFET has a Metal Oxide
Gate electrode electrically insulated from the main semiconductor n-channel or p-channel by
a thin layer of Silicon dioxide or glass. The isolation of the controlling Gate increases the
input resistance of the MOSFET extremely high in the value of the Mega-ohms (MΩ).

4.3 Symbol Of MOSFET

In general, the MOSFET is a four-terminal device with a Drain (D), Source (S), gate
(G) and a Body (B) / Substrate terminals. The body terminal will always be connected to the
source terminal hence, the MOSFET will operate as a three-terminal device. In the below
image, the symbol of N-Channel MOSFET is shown on the left and thesymbol of P-
Channel MOSFET is shown on the right.

Figure 4.2: Symbol Of N-Channel & P-Cannel MOSFE

 The most commonly used package for MOSFET is TO-247AC, for a better
understanding let’s take a look at the pinout of the famous IRFP064N MOSFET(shown
below). As you can see the Gate, Drain, and Source pin are listed below, do remember that
the order of these pins will change based on the manufacturer. The other popular MOSFETs
areIRFZ44N, IRFP064N, IRFP2907, IRFP1504, HY4009, etc.

Picture 4.3: The Package of IRFP064N MOSFET

4.4 MOSFET as a Switch

The most commonapplication of a MOSFETis using it as a switch. The below

circuit shows the MOSFET operating as a Switching device for turning ON and OFF of the
lamp. The gate input voltage VGS applied with the help of an input voltage source. When the
applied voltage is positive, the motor will be in the ON state and if the applied voltage is zero
or negative, the lamp will be in OFF state.

Figure 4.4: Circuit Diagram of The MOSFET Operating as a Switching Device

 When you turn on a Mosfet by supplying the required voltage to the gate pin, it will
remain on unless you supply 0V to the gate. To avoid this problem, we should always use a
pull-down resistor (R1), here I have used a value of 10k. In applications like controlling the
speed of the motor or dimming light, we would use a PWM signal for fast switching, during
this scenario the MOSFET’s gate capacitance will create a reverse current due to parasitic
effect. To tackle this, we should use a current limiting capacitor, I have used a value of 470
here. 

The above load is considered as a resistive load, hence the circuit is very simple, and
in case we need to use an inductive or capacitive load, we need to use some kind of
protection to prevent the MOSFET from getting damaged. For example, if we use a
capacitive load without an electric charge it is considered as a short circuit, this will result in
ahigh “inrush” of current and when the applied voltage is removed from an inductive load,
there will be a large amount of reverse voltage buildup in the circuit when the magnetic field
collapses, it will lead to an induced back-emf in the winding of the inductor.

4.5 Classification of MOSFET

The MOSFET is Classified into two types based on the type of operations,
namely Enhancement mode MOSFET (E-MOSFET) and Depletion mode MOSFET (D-
MOSFET), these MOSFETs are further classified based on the material used for construction
as n-channel and p-channel. So, in general, there are 4 different types of MOSFETs

 N-Channel Depletion mode MOSFET

 P-Channel Depletion mode MOSFET
 N-Channel Enhancement mode MOSFET
 P-Channel Enhancement mode MOSFET

 The N-channel MOSFETs are called NMOS and they are represented by the following

symbols.
 Figure 4.5: Symbol of Enhancement & Depletion Mode of N-Cannel MOSFE

According to the internal construction of a MOSFET, the Gate(G), Drain (D), and
Source(S) pins are physically connected in a Depletion Mode MOSFET, while they are
physically separated in Enhancement Mode, this is the reason why the symbol appears broken
for an Enhancement Mode MOSFET. The P-Channel MOSFETs are called PMOSand they
are represented by the following symbols.

Figure 4.6: Symbol of Enhancement & Depletion Mode of P-Cannel MOSFE

Of the available types, the N-Channel Enhancement MOSFET is the most commonly
used MOSFET. But for the sake of knowledge let's try to get into the difference. The
main difference between the N-Channel MOSFET and P-Channel MOSFETis that in an
N-channel, the MOSFET switch will remain open until a gate voltage is provided. When the
gate pin receives the voltage, the switch (between Drain and Source) will get closed and in P-
Channel MOSFET the switch will remain closed until a gate voltage provided. 

Similarly, the maindifference between the Enhancement Mode and Depletion

Mode MOSFETis that Gate voltage applied to E-MOSFET should always be positive and it
has a threshold voltage above which it turns on completely. For a D-MOSFET the gate
voltage can either be positive or negative and it never turns on completely. Also note that a
D-MOSFET can work in Enhancement and Depletion mode, while an E-MOSFET can work
only in Enhancement mode.
4.6 Operation of MOSFET in Depletion Mode: 

The depletion-mode MOSFETs are usually called the “Switched ON” devices as they
are generally in the closed state when there is no bias voltage at the gate terminal. When we
increase the applied voltage to the gate in positive the channel width will be increased in
depletion mode. This will increase the drain current ID through the channel. If the applied gate
voltage is highly negative, then the channel width will be less and the MOSFET might enter
into the cutoff region.

4.6.1 VI characteristics:

The V-I characteristics of the depletion-mode MOSFET transistor are drawn

between the drain-source voltage (VDS) and Drain current (ID). The small amount of voltage at
the gate terminal will control the current flow through the channel. The channel formed
between the drain and the source will act as a good conductor with zero bias voltage at the
gate terminal. The channel width and drain current will increase if the positive voltage is
applied to the gate whereas they will get decreased when we apply a negative voltage to the
gate.

Figure 4.7: The V-I Characteristics of The Depletion-Mode MOSFET

4.7 Operation of MOSFET in Enhancement Mode:

The operation of MOSFET in Enhancement mode is similar to the operation of the open
switch, it will start to conduct only if the positive voltage(+V GS) is applied to the gate
terminal and the drain current starts to flow through the device. The channel width and drain
current will increase when the bias voltage increases. But if the applied bias voltage is zero or
negative the transistor will remain in the OFF state itself.

 4.7.1 VI Characteristics:

VI characteristics of the enhancement-mode MOSFET are drawn between the drain

current (ID) and the drain-source voltage (VDS). The VI characteristics are partitioned into
three different regions, namely ohmic, saturation, and cut-off regions. The cutoff region is the
region where the MOSFET will be in the OFF state where the applied bias voltage is zero.
When the bias voltage is applied, the MOSFET slowly moves towards conduction mode, and
the slow increase in conductivity takes place in the ohmic region. Finally, the saturation
region is where the positive voltage is applied constantly and the MOSFET will be staying in
the conduction state.

 Figure 4.8: The V-I Characteristics of The Enhancement -Mode MOSFET

4.8 Implemented of MOSFET sector

The figure below shows the circuit diagram of MOSFET matrix in which is the two trace of
semiconductor devices built in a manner that can offer the desired power delivered to the
transformer.
 Figure 4.9: Circuit Diagram of The MOSFET Matrix

Calculation of inverter power:-

This configuration consists of an array of MOSFETs connected in parallel. The

MOSFET used in this design has its path number as IRFP064N and data sheet parameters as
following:

 Continuous Drain Current (ID)= 110A

 Voltage rating = 55V
 Power factor (pF) = 0.88
 Power rating = 200W
The required number of MOSFETs per channel for a 1kVA Inverter is thus obtained:
P = VA cosθ
Where cosθ = pF;
and P = actual or real power of the Inverter.
Therefore;
P=1000/0.88=1056W
The Total number of MOSFET is given by Number of MOSFETSs = Actual
Power of the design/ Power rating of the MOSFET:
That is: - 1056/200 = 5.28
Hence, 6 MOSFETs were used; with 3on each parallel channel, boosting the
current to drive the transformer.
-:The function of resistor (10k Ohm)

.The dV/dt problem is not treated in my comment. The dv/dt is a dynamic protection

It is so that the MOST can be also made on by a rapid increase of the drain to source
voltage with time, that is unintentional on of the transistor not through the gate pulses but
through a too rapid increase of  Vds with time., dVds/dt. Such rate of rise of Vds will cause
an equal rate of rise of the Vgs. Which in turn cause a displacement capacitive current to flow
in Cgs charging it. If Cgs is charged to >= Vth the transistor will unintentionally turn on
while the voltage is high on it. And so can be damaged except one has to see for the right
.protection. The right protection is partially discharge Vgs across a shunt resistance

For sake of simplification and assuming that most of the displacement current passes through
the shunting resistance Rsh , then Rsh  i= Rsh Cgd  dVds /dt <= Vth, since all parameters are
known except Rsh, one can get an upper bound for Rsh. dVds /dt must be taken the highest
.possible value. This i the equation given in the paper

A solution is to permanently connect a low source resistance driver at the gate to source
terminals of the transistor guaranteeing that a small shunt resistance will be always exist
across the the gate to source terminals. Using strong drivers with small source resistance is
.normal practice and it is required also to speed up the turn on and turn off  transitions

-:2nd answer

It is not normal practice to shunt the gate to source of a power transistor with a resistor when
operating it as a switch. Normally it is driven by a low source resistance driver to affect high
speed switching from the off to the on state and vice verse. The switching time is about the
time constant of Cgs Rs where Cgs the source resistance and Cgs is the gate to source
 .capacitance, which is a transistor parameter and you can find it in the data sheet

However, if you want to protect the gate to source of the transistor from electrostatic
discharge you can shunt it by a zener  diode with the highest allowed voltage at the gate to
source junction. However you can use a shunting resistor to leak the the electrostatic charge.
This resistance can be as high as 10 Kohms. It must be much higher than the Rs the source
.resistance to avoid appreciable current bleeding from the driver source

If you drive the transistor with uni polar current source the you have to discharge the Cgs by
.a shunting resistance. It is the discharge time which sets  the value resistor
In case of using the the transistor as an amplifier in class A operation then the gate must be
biased by a potential divider between VDD an the ground with the gate at the mid point of the
.divider. Th value of the resistor depends on the required gate bias and VDD

-:The function of diode (6A10)

A diode is an electrical device allowing current to move through it in one direction

withfar greater ease than in the other. The most common kind of diode in modern circuit
design is the semiconductor diode, although other diode technologies exist.

The function of gate resister:-

One reason a gate resistor is used is to slow down the turn-on and turn-off of the
MOSFET. (This is more relevant to power circuits that switch a fair amount of current.)
While it may seem that very fast switching is desirable, because of lower switching losses, it
can result in ringing due to parasitic inductances, leading to electrical noise problems.