International Journal of Innovations in Engineering and Technology (IJIET)

Design Challenges and Performance Parameters

of Low Noise Amplifier
S. S. Gore
Department of Electronics & Tele-communication, SITRC Nashik, (India)

G. M. Phade
Department of Electronics & Tele-communication, SITRC Nashik, (India)

Abstract- Wireless communication system is an integral part of day today communication. For effective wireless
communication, faithful transreceiption of the signal is required. It can be achieved by careful design of the receiver
circuit. Hence there is wide scope of improvement in different blocks of the receiver. LNA is the first block of any
receiver in communication system. At the receiver side in communication link weak signal should be amplified for further
processing at minimum noise level. Amplification of weak signal and attenuation in noise level is a key role of LNA.
LNA design meets different challenges because of its simultaneous requirements like good transistor selection, suitable
DC biasing network, high gain, low noise figure, good input-output matching circuits, high linearity and good stability.
All these design parameters are equally important and always independent on each others. To simplify the design and
analysis of analog circuits, it is useful to abstract circuit blocks into two-port networks. System analysis for two port
network can be achieve using Impedance (z), Admittance (y), Hybrid (h) or Scattering parameters (s). Scattering
parameters (s) are more applicable at RF due to its ability to express in terms of powers, are suitable for high frequencies
and possibility of complete transmission.
This paper highlights the design challenges, performance parameters or all the necessary steps for LNA design.

IndexTerms-ADS(Advanced Design System), Conditional Stability, Impedance Matching, LNA(Low Noise Amplifier),
Smith Chart, S-parameters.

I. INTRODUCTION

Nowaday’s effective wireless communication plays an important role in different communication systems like
cellular phones, pagers, WLAN(Wireless local area networks), GPS, handhelds and short-range data communication
devices employing bluetooth [1].
LNA is the first active building block and special type of electronic amplifier used in communication systems to
amplify very weak signals captured by an antenna at receiver. The received signal is typically filtered by BPF and
then amplified by an LNA shown in fig.1.

II. BLOCK DIAGRAM

Fig.1 Typical super heterodyne receiver [7]

LNA should be stable i.e. should not be generate unwanted signals and the performance should remain constant with
respective to time this is one of the requirement of the LNA. A further requirement of LNA is that, amplifier should
provide good reverse isolation and input and output match are also important [6].
Output of the LNA is given to the analog base-band block by mixing with a LO (Local Oscillator).The main
function of the this block is demodulate the signal. After being demodulated then these signal is applied to an ADC
(Analog to Digital Converter) which digitizes the analog signal. In last stage digital signal is then processed in a

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 International Journal of Innovations in Engineering and Technology (IJIET)

DSP (Digital Signal Processing) [2]. LNA can be use as a two port network. Performance measures of the two-port
network should provide transistor selection, DC biasing network, gain, noise figure, input and output match,
linearity, and stability that are important in the design of LNA [1].

III. DESIGN PARAMETERS

It is impossible to design a LNA without trade-offs.

Design procedure or steps are different according to designer or receiver but commonly or generally used steps are
as follows:

A. Selection of device
Transistor selection is the first and most important step in a LNA design. Examination of a datasheet is a good
starting point in a transistor evaluation for LNA
design. The transistor should exhibits or satisfies all the design parameters at the lowest possible current and lower
power consumption while working with higher frequency. The transistor selection for the LNA also depends upon
the desired frequency range. The BJT is used up to certain frequency due to their structure and manufacturing
process but FET (CMOS or HEMT) can be used for higher frequencies. GaAS FET are mostly used for frequency
ranges up to several GHz [3]. MESFET and HEMT find applications up to 60 to 70 GHz and HEMT even up to 200
GHz [4].

B.DC Bias Network


The purpose of a good dc bias design is to select the proper Quiescent point (Q-pt.) and hold the constant over
variations in transistor parameters with temperature changes. A resistor bias network can be used with good results
over moderate temperature changes. However, an active bias network is usually preferred for large temperature
changes [5]. Designer will not be satisfied if there is design of poor dc bias network.

C. Selection of the Gain

Fig. 2 illustrates the different powers coming in and out of an amplifier and the different gains. There are three
power-gain definitions that are used in RF applications.

Fig.2 Gain calculation [7]

Power-gain definitions:
PAVS - Power available from source
PAV N - Power available from network
PIN - Power delivered to the input
PL - Power delivered to the load

Power gain = GP = PL/PIN is the ratio of power dissipated in the load ZL to the power delivered to the input of the
two-port network. This gain is independent of ZS, although some active circuits are strongly dependent on ZS. [10]

Available gain = GA = PAVN / PAVS is the ratio of the power available from the two-port network to the power
available from the source. This assumes conjugate matching of both the source and the load, and depends on ZS but
not ZL. [10]

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Transducer power gain = GT = PL / PAVS is the ratio of the power delivered to the load to the power available from
the source. This depends on both ZS and ZL. [10]

Conversion gain is another gain definition used in RF-receivers which is the ratio between the intermediate
frequency (IF) power at the output of the mixer and the available power at the RF input of the receiver. Theoretical
value of the gain should be infinite and practical value should be maximum. When relation between input-output is
linear then it is called as linear gain. However all RF& IF circuits are inherently non-linear [3].

D. Noise Figure

NF is a measure of SNR degradation as the signal traverses the receiver front-end. Mathematically, NF is defined as
the ratio of the input SNR to the output SNR of the system. NF may be defined for each block as well as the entire
receiver.
Generally it is not possible to obtain minimum noise figure and maximum gain for an amplifier, so some sort of
compromise must be made. This can be done by using constant gain circles and circles of constant noise figure to
select functional trade-off between noise figure and gain. Smith chart plays vital role for this. The constant gain
circles and circles of constant noise figure can be drawn on the smith chart and by observing them the input
matching network for minimum noise figure can be designed [1]. The input matching network in designed for
minimum NF and output matching network in designed for maximum gain. The quality of the termination is
defined by the reflection coefficient ī.
Noise figure parameter, N is given as
N = [(F-F min)/(4Rn/Z0)] xŇ1+ī optŇ2 (1)
Center and Radius of noise figure circle is given as
CF = ī opt / (N+1) (2) RF = [N (N+1-Ň ī opt Ň2)] 1/2 /(N+1) (3)

NF is also a function of the source admittance or impedance driving by the system

F=Fmin + Rn/Gs ŇYs-YoptŇ2 (4)

From equation (4) ,Ys = Gs + jBs, represents source admittance presented to the two-port network, Yopt= Gopt +
jBopt, is represents source admittance that results in the optimum NF, Fmin represents minimum NF of the
network, Rn is the equivalent noise resistance of the two-port network, Gs is the real part of the source admittance
and Rn/Gs is represents how dependent the system NF is on departures from optimum conditions.[6]

E. Impedance Matching

Input and output impedance matching network is the main and important in LNA design because often times the
system performance can be strongly affected by the quality of the termination. General diagram of impedance match
shown in fig 3. and commonly used matching networks are LC and RLC shown in fig.5.
Antenna and BPF are presents before the LNA. Frequency responses of these will deviate to LNA, from its normal
operation. Undesirable reflections from the LNA back to the antenna and BPF must be avoided. Hence quality of
termination should be good to avoid the undesirable reflections. The quality of the termination is defined by the
reflection coefficient ī. An impedance match is when the reflection coefficient is equal to zero and occurs when ZS
= ZL.
There are two types of impedance matching. The first type of impedance matching concerns with
minimizing signal reflection from the load back to the source. The second type of matching concerns with maximum
power transfer from the source to the load [11]. Hence it is often referred to as power matching. Power matching
occurs when the load impedance is the complex conjugate of the source impedance. Conditions for impedance
matching and power matching matching are equal shown in fig 4.

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IMN- Input Matching Network

INMN- Inter stage Matching Network
OMN- Output Matching Network
BN- Bias Network
Fig. 3. General diagram of impedance match [2]

Fig. 4 Condition for impedance and power match

Fig. 5 Matching networks [9]

F. Linearity

Linearity is a key requirement in the design of an LNA because the LNA must be able to maintain the linear
operation in the presence of a large interfering signal.There are many ways to evaluate the linearity of the LNA but
to measure the third-order intercept point (IP3) is the most commonly used method. The IIP3 is obtained either
graphically or using usual method. IIP3 is obtained graphically by plotting the output power versus the input power
which is shown by logarithmic scale in fig. 6. Two curves are drawn, one for the linearly amplified signal at an input
tone frequency, other for a nonlinear product. Both curves are extended with straight lines of slope 1 and 3. The
point where the curves intersect is the third-order intercept point.

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Fig. 6 Measurement of IIP3 [7]

Linearity is the criterion that defines the upper limit of detectable RF input power and sets the dynamic range of the
receiver. The linearity of an amplifier is described in terms of 1-dBcompression point (P1dB) and IIP3.The
saturation effect begins once the main component of the output signal stops following the input signal with ideal
ratio. This is known as 1-dBcompression point and is defined as the level at which the gain drops by 1dB. For
IIP3,the inter modulation products will increase in amplitude by 3dB when the input signal is raised by 1-dB.

G. Stability

The stability analysis is the last and important step in the LNA design. The stability of an amplifier is a very
important consideration in a microwave circuit design. Stability or resistance to oscillation in a microwave circuit
can be determined by the S-parameters. Oscillations are possible in a two-port network if either or both the input and
the output port have negative resistance. This condition occurs when the magnitude of the input or output reflection
coefficients is greater than one,|ΓŝŶ|хϭŽƌ|ΓŽƵƚ|хϭ͘
There are two types of amplifier stability, unconditionally stable and conditionally stable. If the real part of the input
and output impedances of the amplifier is greater than zero for all passive load and source impedances then
amplifier is said to be conditionally stable or potentially unstable. The stability test should be done for every
frequency in the desired range.
Fig.7 shows the source, load, input, and output reflection coefficients for a two-port network.

Fig.7 Stability of two-port network [11]

In terms of reflection coefficients, the necessary conditions for unconditional stability at a given frequency are:
| Γ^| фϭĂŶĚ | Γ>| фϭ(5)

ŇīinŇ=ŇS11+(S12.S21.īL) / (1-S22. īLŇ< 1(6)

ŇīoutŇ=ŇS22+(S12.S21.īS)/(1-S22.īSŇ< 1(7)

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 International Journal of Innovations in Engineering and Technology (IJIET)

K= (1-ŇS11Ň2 -ŇS22Ň2 +ҨŇ2 ) /( 2ŇS21Ň* ŇS12Ň ) >1 (8)

¨ = S11*S22 - S12*S21 < 1(9)


S-parameters provided by the manufacturer of the transistor will support in stability analysis of the LNA circuit.
Two main methods exist in S-parameter stability analysis numerical and graphical. Numerical analysis consists of
calculating a term called Rollett stability factor K and Intermitted quantity called delta (ǻ).When the K >1 the
circuit will be unconditionally stable for any combination of source and load impedance. When K <1 then circuit is
potentially unstable and oscillation may occur with a certain combination of source and/or load impedance presented
to the transistor. The K factor represents a quick check for stability at given frequency and given bias condition.[8]

Fig.8 Graphically representation of two-port network

Representation of two-port network in the form of equations are:

b1= S11a1 + S12a2 and (10)

b2 = S21a1 + S22a2 (11)

Where as :
Input Return Loss ( S11) = b1/a1
Output Return Loss (S22) = b2/a2
Gain (S21) = b2/a1
Isolation (S12) = b1/a2

Each and every transistor having separate S-parameter file designed or given by the designer’s. Which includes all
the parameters mentioned above in proper sequence including frequency, bias conditions (Vds, Id), ratio of Rn/Z0 ,
reflection coefficient (Γ) and last updated information.

IV. CONCLUSION
LNA is a crucial part in RF receiver. All design parameters reflect the quality of LNA. LNA is designed for amplify
the weak signals , attenuate the noise level and providing an appropriate working condition to the mixer. This paper
highlights the design challenges, performance parameters or all the necessary steps for LNA design. Smith chart is a
useful tool in impedance matching circuit design. Scattering parameters (s) are more applicable at RF due to its
ability to express in terms of powers, are suitable for high frequencies and possibility of complete transmission.
The scope of this paper or project to be simulate the LNA using different tools like Cadence, Spice
,QUCS(Quit Universal Circuit Simulator), Microwind or Agilent-ADS-Simulation tool by applying microwave
frequency. ADS-Simulation tool is powerful for the circuit or LNA design at RF frequency. Another scope of this
project is to design the LNA for GPS (Global Positioning System) application for frequency 1.52GHz and SiGe-
BiCMOS technology can be preferred for high frequency applications or for fabrication of LNA.

REFERENCES
[1] Ratnaparkhi Vivek, S.B.Deosarkar and L. Punitha “An Effective Design of Two Stage Low Noise Amplifier for WiMAX”, PP.1-4, May-
2008,

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[2] M. Challal, A. Azrar and D. Vanhoenacker, “K- Band Two Stages Low Noise Amplifier Design in Microstrip Technology”, 8th
International Multi-Conference ,Tunisia , PP.22-25, March- 2011. E-mail: [email protected]
[3] Varish Diddi , Kumar Vaibhav and Animesh Biswas, “Design of Low Power LNA for GPS Application”, International Conference on
Circuits, System and Simulation, IACSIT Press, Singapore, vol.7, March-2011.
[4] D. K. Shaeffer and T. H. Lee, “A 1.5-V, 1.5-GHz CMOS Low Noise Amplifier”, IEEE Journal Solid-State Circuits, vol.32, No.5, PP. 745-
759, May2007.
[5] Dan Zhang and Wei Wu,“Circuits, System and Simulation,”International Conference, Singapore- IPCSIT vol.7. 2011.
[6] J.P.Silver, “MOS- Common source LNA-Design Tutorial”, www.rfic.uk, Email:[email protected] PP. 1-11.
[7] S. S. Gore and G. M. Phade, “Design challenges of Low Noise Amplifier” A conference for Post Graduate Students in Electronics /
Electronics and Telecommunication Engg. (ePGCON-2013), PP.1-6, 20-21March-2013.E-mail:- [email protected]
[8] T. H. Lee, “The Design of CMOS Radio Frequency Integrated Circuits”, PP.221-225,334- 356 and 364-400. Press-2010.
[9] Reinhold Ludwig and Pavel Bretchko, “RF Circuits Design Theory and Applications”, ISBN: 0-13-095323-7,PP. 37-93,101-130 and
201-263. Press-2008.
[10] David M.Pozar,“Microwave Engineering”,Third Edition, ISBN: 978-81-265-1049-8, PP. 64-69,542-545 and 570- 572, Press-2010.
[11] J. Rogers and C. Plett, “Radio Frequency Integrated Circuit Design”, ISBN: 1-58053-502- x,PP.1 - 93,141-189 and 319-343. Press-2003.

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