Scribd
Upload
82 views4 pages

Silicon NPN Power Transistors: 2SD600 2SD600K

This document provides product specifications for the SavantIC Semiconductor 2SD600 and 2SD600K silicon NPN power transistors. The transistors feature a TO-126 package, breakdown voltages of 100V/120V, current of 1A, and low saturation voltage, making them suitable for low-frequency power amplifier applications. Key specifications include maximum ratings, characteristics, switching times, and package outline dimensions.

Uploaded by

Flavio Tonello Tavares
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
82 views4 pages

Silicon NPN Power Transistors: 2SD600 2SD600K

This document provides product specifications for the SavantIC Semiconductor 2SD600 and 2SD600K silicon NPN power transistors. The transistors feature a TO-126 package, breakdown voltages of 100V/120V, current of 1A, and low saturation voltage, making them suitable for low-frequency power amplifier applications. Key specifications include maximum ratings, characteristics, switching times, and package outline dimensions.

Uploaded by

Flavio Tonello Tavares
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 4

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD600 2SD600K

DESCRIPTION
·With TO-126 package
·Complement to type 2SB631/631K
·High breakdown voltage VCEO100/120V
·High current 1A
·Low saturation voltage

APPLICATIONS
·For low-frequency power amplifier
applications

PINNING

PIN DESCRIPTION

1 Emitter

Collector;connected to
2
mounting base

3 Base

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

2SD600 100
VCBO Collector-base voltage Open emitter V
2SD600K 120

2SD600 100
VCEO Collector-emitter voltage Open base V
2SD600K 120

VEBO Emitter-base voltage Open collector 5 V

IC Collector current (DC) 1 A

ICM Collector current-peak 2 A

Ta=25 1
PD Total power dissipation W
TC=25 8

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD600 2SD600K

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

2SD600 100
Collector-emitter
V(BR)CEO IC=1mA; RBE== V
breakdown voltage
2SD600K 120

2SD600 100
Collector-base
V(BR)CBO IC=10µA ;IE=0 V
breakdown voltage
2SD600K 120

V(BR)EBO Emitter-base breakdown voltage IE=10µA ;IC=0 5 V

VCEsat Collector-emitter saturation voltage IC=0.5A ;IB=50mA 0.4 V

VBEsat Base-emitter saturation voltage IC=0.5A ;IB=50mA 1.2 V

ICBO Collector cut-off current VCB=50V; IE=0 1 µA

IEBO Emitter cut-off current VEB=4V; IC=0 1 µA

hFE-1 DC current gain IC=50mA ; VCE=5V 60 320

hFE-2 DC current gain IC=0.5A ; VCE=5V 20

fT Transition frequency IC=50mA ; VCE=10V 130 MHz

COB Collector output capacitance f=1MHz ; VCB=10V 20 pF

Switching times

tf Fall time 0.1 µs

IC=500mA ; VCE=12V
toff Turn-off time 0.5 µs
IB1=-IB2=50mA

tstg Storage time 0.7 µs

hFE-1 Classifications
D E F

60-120 100-200 160-320

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD600 2SD600K

PACKAGE OUTLINE

Fig.2 Outline dimensions

3
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD600 2SD600K

You might also like