(~fon I PP90R340C3

Coo IMOS~ Power Transistor Product Summary

Features
V DS @ T ~=25°C 900 V
ELowest figure-of-merit RON x Qg
R DS(on),max @Tj=25°C 0.34 0
DExtreme dv/dt rated
Q g,typ 94 nC
EHigh peak current capability
EQualified according to JEDEC11 for target applications
EPb-free lead plating; RoHS compliant
PG-T0220
EWorldwide best R DS,on in T0220

EUltra low gate charge

CoolMOS~ 900V is designed for:

EQuasi Resonant Flyback I Forward topologies
EPC Silverbox and consumer applications
Elndustrial SMPS
drain
pin 2
Type Package Marking
1PP90R340C3 PG-T0220 9R340C
source
pin3
Maximum ratings, atT~=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous drain current Tc25 °C 15 A
T~=100°C 9.5

Pulsed drain current 2) D,pulse Tc~25 °C 34

Avalanche energy, single pulse EAS I~3.1 A, VDDSO V 678 mJ
Avalanche energy, repetitive ~ EAR I D=3•1 A, VDDSO V 1
Avalanche current, repetitive tAR 2)3) ‘AR 3.1 A
MOSFET dvldt ruggedness dvldt VDSO...400 V 50 Vms
Gate source voltage VGS static ±20 V
AC (f>1 Hz) ±30
Power dissipation Pt01 Tc25 °C 208 W
Operating and storage temperature T~, Tstg 55 ... 150
Mounting torque M3 and M3.5 screws 60 Ncm
Rev. 1.1 page 1 2012-01-10
 (t~in~!n_ I PP90R340C3

Maximum ratings, at T~=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous diode forward current Is 9.2 A
T~=25 °C
Diode pulse current 2) ISpulse 34
Reverse diode dv/dI dv/dt 4 Vms

Parameter Symbol Conditions Values Unit

mm. typ. max.

Thermal characteristics

Thermal resistance, junction case

- R thJC - - 0.6 Kr’!’!

Thermal resistance, junction -

. R thJA leaded - - 62
ambient

Soldering temperature, T 1.6 mm (0.063 in.) - - 260 °C

wavesoldering only allowed at leads so’d from case for 10 s

Electrical characteristics, at T~=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V(BR)Dss VGSO V, 1D25° pA 900 - - V

Gate threshold voltage VGS(th) VDSVGS, I D=1 mA 2.5 3 3.5

V os90° V, V GS° V,
Zero gate voltage drain current I DSS ~I~~=2s 0C - - 2 pA

VDS900 V, V~s0 V, 20
T~=lSO°C - -

Gate-source leakage current I GSS V~s2O V, VD5O V - - 100 nA

VGS=1OV, 1D9.2A,
Drain-source on-state resistance R DS(on) T~=25 0~ - 0.28 0.34 C~

VGS=1OV,ID=9.2A, 076 -

T1=150°C -

Gate resistance RG f =1 MHz, open drain - 1.3 -

Rev. 1.1 page 2 2012-01-10

 .—.—---~

(iiifiii~~~,
Parameter Symbol Conditions Values ‘Unit
mm. typ. max.

Dynamic characteristics

Input capacitance C~ v GS=° v, v DS=1 00 V, - 2400 - pF

Output capacitance C f=1 MHz - 120 -

Effective output capacitance, energy

related 5) C o(er) - 71 -
V GS° V, V DS° V
to 500 V
Effective output capacitance, time
related 6) C o(tr) - 280 -

Turn-on delay time td(ofl) - 70 - ns

Risetime tr VDD=400V, 20 -

VGS=lO V, I D—9.2A,
Turn-off delay time td(o~ R~=23.l o - 400 -

Fall time tf - 25 -

Gate Charge Characteristics

Gate to source charge Q~ - 11 - nC

Gate to drain charge Q gci V DD40° V, 1D=9•2 A, - 41 -

Gate charge total V GS° to 10 V - 94 tbd

Gate plateau voltage Vpiateau - 4.6 - V

Reverse Diode

V~s=O V, I F92 A,
Diode forward voltage V~ 0.8 1.2 V
T~~25°C -

Reverse recoverytime tr, - 510 - ns

VR=400V, F1S’
Reverse recovery charge ~ di F/dt=l00 ~ - 11 - iC

Peak reverse recovery current I - 41 - A

‘~ J-STD2O and JESD22

2) Pulse width t~, limited byTjmax

3) Repetitive avalanche causes additional power losses that can be calculated a5PAVEAR*f.

4) 5D~D’ di/dt~0OAljis, VocIink400V, Vpeak<V(BR)Dss, Tj<Tjmax, identical low side and high side switch

5) Co~er~ is a fixed capacitance that gives the same stored energy as Q~ while VD5 is rising from 0 to 50% VDss.

6) C0(~) is a fixed capacitance that gives the same charging time asC0~~ while VD5 is rising from 0 to 50% V055

Rev. 1.1 page 3 2012-01-10

 (!~ineon I PP90R340C3
1 Power dissipation 2 Safe operating area
P ~0~f(T c) I D=f(V D5); Tc25 °C; D 0
parameter: t~,

:::;::::
150

‘C
0~
100

50

n
0 25 50 75 100 125 150 1 10 100 1000
Tc [CC] VDS [V]

3 Max. transient thermal impedance 4 Typ. output characteristics

ZthJc=f(tp) I D~(V D5); T j25
parameter: D=t ~/T parameter: V c~s

10°

riTZ r
~—

1~
~ 10~

1 02
~r
ingle,’ - r~

1 0° 1 o~ 1~ 102 10.1 0 5 10 15 20 25
t~ [s] VDS [V]

Rev. 1.1 page 4 2012-01-10

 (~ineon 1PP90R340C3
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
D=f(VDS); T~15O °C RDS(Ofl)~f(lD); T~15O °C
parameter: V GS parameter: V~

25

20

15

10

0
0 5 10 15 20 25 0 5 10 15 20 25 30
VDS[V] ‘D [A]

7 Drain-source on-state resistance 8 Typ. transfer characteristics

RDS(Ofl)f(TJ); I D=9.2 A; V~~1O V I D=f(VG5); VDS=2OV
parameter: T~

0.8

0.6

Co

0.4

0.2

0
-60 -20 20 60 100 140 180 0 2 4 6 8 10
T~ [°C] VGS [V]

Rev. 1.1 page 5 2012-01-10

 (Q~neon 1PP90R340C3
9 Typ. gate charge 10 Forward characteristics of reverse diode
V ~ gate); I D=9•2 A pulsed I Ff(VSD)

parameter: VDD parameter: T~

10 102

101

6
5.
UI
(2 C1~
>
4
100

0 1 01
0 20 40 60 80 100 0 0.5 1 1.5 2
Qgate [nCj Vso[V]

11 Avalanche energy 12 Drain-source breakdown voltage

EAS=f(TJ); I D=3lA; VDD=5O V V BR(DSS)f(T .~); I D~°25 mA

700

600
1050

z:z~
1000 — —

500

950
400 5.
E Co
CO
Co (2

Lii 300 m
> 900----r------

200
--/
850 — —
100
~t-
0 800 —i----
25 50 75 100 125 150 -60 -20 20 60 100 140 180
T~ [°C] T~ [°Cj

Rev. 1.1 page 6 2012-01-10

 (~~in~gn I PP90R340C3
13 Typ. capacitances 14 Typ. C0~~ stored energy
C=f(VDS); V~=O V; f =1 MHz E ~ f(V DS)

1 o~ 12

10

~2
U
.~ 102 6
0 IJJ

1 o~

100 0
0 100 200 300 400 500 600 0 100 200 300 400 500 600
VDS [V] Vos[V]

Rev. 1.1 page 7 2012-01-10

 (Z~neon_ I PP90R340C3

Definition of diode switching characteristics

“V

Idf rr
=f S +f F

~ -i-Q

Rev. 1.1 page 8 2012-01-10

 (~n~!n 1PP90R340C3

PG-T0220 Outlines
A
A

I I

DIM MILLIMflERS INCHES

MIN MAX MIN MAX DOCUMENT NO.
A 4.30 4.57 0.169 0.180 Z8B00003318
Al 1.17 1.40 0.046 0.055
A2 2.15 2.72 0.085 0.107 SCALE 0
b 0.65 0.88 0.026 0.034
bI 0.95 1.40 0.037 0.055 2.5
b2 0.95 1.15 0.037 0.045
0 2.5
b3 0.65 1.15 0.026 0.045
c 0.33 0.60 0.013 0.024 5mm
D 14.81 15.95 0.583 0.628
Di 8.51 9.45 0.335 0.372 EUROPEAN PROJECTION
D2 12.19 13.10 0.480 0.516
E 9.70 10.36 0.382 0.408
El 6.50 8.60 0.256 0.339
e 2.54 0.00
ci 5.08 0.200
N 3 ISSUE DATE
Hi 5.90 6.90 0.232 0.272 23-08-2007
L 13.00 14.00 0.512 0.551
Li - 4.80 - 0.189 RE~1SION
05
gP 3.60 3.89 0.142 0.153
Q 2.60 3.00 0.102 0.118

Dimensions in mm/inches

Rev. 1.1 page 9 2012-01-10

 Published by
I nfin eon Technologies AG
81726 Munich, Germany
© 2008 I nfineon Technologies AG
All Rights Reserved.

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The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

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contact the nearest Infineon Technologies Office (www.infineon.com).

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Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
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Rev. 1.1 page 10 2012-01-10