IHW30N160R2

Soft Switching Series

TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode

Features: C
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1600 V applications offers : G
E
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications PG-TO-247-3

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Applications:
• Inductive Cooking
• Soft Switching Applications

Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Package

IHW30N160R2 1600V 30A 1.8V 175°C H30R1602 PG-TO-247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1600 V
DC collector current IC
TC = 25°C 60
TC = 100°C 30
Pulsed collector current, tp limited by Tjmax ICpuls 90
Turn off safe operating area (VCE ≤ 1600V, Tj ≤ 175°C) - 90
Diode forward current IF
A
TC = 25°C 60
TC = 100°C 30
Diode pulsed current, tp limited by Tjmax IFpuls 90
Diode surge non repetitive current, tp limited by Tjmax IFSM
TC = 25°C, tp = 10ms, sine halfwave 50
TC = 25°C, tp ≤ 2.5µs, sine halfwave 130
TC = 100°C, tp ≤ 2.5µs, sine halfwave 120
Gate-emitter voltage VGE ±20
V
Transient Gate-emitter voltage (tp < 10 µs, D < 0.01) ±25
Power dissipation TC = 25°C Ptot 312 W
Operating junction temperature Tj -40...+175
°C
Storage temperature Tstg -55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

1
J-STD-020 and JESD-022

Power Semiconductors 1 Rev. 2.1 Nov 09

 IHW30N160R2
Soft Switching Series

Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, RthJC 0.48
junction – case
Diode thermal resistance, RthJCD 0.48 K/W
junction – case
Thermal resistance, RthJA 40
junction – ambient

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Value
Parameter Symbol Conditions Unit
min. Typ. max.
Static Characteristic
Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0 V , I C =500 µA 1600 - -
Collector-emitter saturation voltage VCE(sat) V G E = 15 V, I C =30A
T j = 25°C - 1.8 2.1
T j = 150 °C - 2.25 -
T j = 175 °C - 2.35 -
Diode forward voltage VF VGE=0V, IF=30A V
T j = 25°C - 1.65 2.0
T j = 150 °C - 2.0 -
T j = 175 °C - 2.0 -
Gate-emitter threshold voltage VGE(th) I C =0 .75mA, 5.1 5.8 6.4
V C E =V G E
Zero gate voltage collector current ICES V C E = 16 00 V ,
VGE=0V
- - 5 µA
T j = 25°C
T j = 175 °C - - 2500
Gate-emitter leakage current IGES V C E = 0 V , V G E =20V - - 100 nA
Transconductance gfs V C E =20V, I C =30A - 22.5 - S
Integrated gate resistor RGint none Ω

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Soft Switching Series

Dynamic Characteristic
Input capacitance Ciss V C E =25V, - 2740 -
Output capacitance Coss VGE=0V, - 68.1 - pF
Reverse transfer capacitance Crss f=1MHz - 58.7 -
Gate charge QGate V C C = 12 80 V, - 94 -
nC
I C =30A;V G E = 1 5 V
Internal emitter inductance LE - 13 -
nH
measured 5mm (0.197 in.) from case

Switching Characteristic, Inductive Load, at Tj=25 °C

Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-off delay time td(off) T j = 25°C , - 525 -
Fall time tf V C C = 60 0 V, I C =30A - 38.3 - ns
V G E =0 /1 5V,
Turn-on energy Eon R G = 1 0Ω - - -
Turn-off energy Eoff - 2.53 -
mJ
Total switching energy Ets - 2.53 -

Switching Characteristic, Inductive Load, at Tj=175 °C

Value
Parameter Symbol Conditions Unit
min. Typ. max.
IGBT Characteristic
Turn-off delay time td(off) T j = 175 °C - 564 -
Fall time tf V C C = 60 0 V, I C =30A, - 111 - ns
V G E = 0 /1 5V,
Turn-on energy Eon R G = 1 0Ω - - -
Turn-off energy Eoff - 4.37 -
mJ
Total switching energy Ets - 4.37 -

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 IHW30N160R2
Soft Switching Series

tp=1µs
10µs

80A 20µs
TC=80°C
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

TC=110°C 10A 50µs
60A

40A
Ic 500µs
1A

20A 5ms

DC
0A
10Hz 100Hz 1kHz 10kHz 100kHz 0.1A
1V 10V 100V 1000V
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of Figure 2. IGBT Safe operating area
switching frequency for hard (D = 0, TC = 25°C,
switching (turn-off) Tj ≤175°C;VGE=15V)
(Tj ≤ 175°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 10Ω)

300W 50A

250W 40A
IC, COLLECTOR CURRENT
Ptot, DISSIPATED POWER

200W
30A

150W
20A
100W

10A
50W

0W 0A
25°C 50°C 75°C 100°C 125°C 150°C 25°C 50°C 75°C 100°C 125°C 150°C

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function of Figure 4. DC Collector current as a function
case temperature of case temperature
(Tj ≤ 175°C) (VGE ≥ 15V, Tj ≤ 175°C)

Power Semiconductors 4 Rev. 2.1 Nov 09

 IHW30N160R2
Soft Switching Series

80A 80A
VGE=20V
70A VGE=20V 70A
15V
15V
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

60A 60A 13V
13V
11V
50A 11V 50A
9V
9V
40A 40A 7V
7V
30A 30A

20A 20A

10A 10A

0A 0A
0V 1V 2V 3V 0V 1V 2V 3V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic Figure 6. Typical output characteristic
(Tj = 25°C) (Tj = 175°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE

80A
3.0V IC=60A
70A
2.5V
IC, COLLECTOR CURRENT

60A

50A 2.0V IC=30A

40A
1.5V IC=15A

30A
TJ=175°C 1.0V
20A
25°C
0.5V
10A

0A 0.0V
0V 2V 4V 6V 8V 10V 0°C 50°C 100°C 150°C

VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter saturation
(VCE=20V) voltage as a function of junction
temperature
(VGE =15V)

Power Semiconductors 5 Rev. 2.1 Nov 09

 IHW30N160R2
Soft Switching Series

td(off)
td(off)
1000ns
t, SWITCHING TIMES

t, SWITCHING TIMES
100ns

tf
100ns tf

10ns
0A 10A 20A 30A 40A 50A 60A 70A 10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 9. Typical switching times as a Figure 10. Typical switching times as a
function of collector current function of gate resistor
(inductive load, TJ=175°C, (inductive load, TJ=175°C, VCE=600V,
VCE=600V, VGE=0/15V, RG=10Ω, VGE=0/15V, IC=30A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE

6V

max.
t, SWITCHING TIMES

tf 5V
100ns

typ.
4V

min.
3V

10ns
25°C 50°C 75°C 100°C 125°C 150°C 2V
-50°C 0°C 50°C 100°C

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage as a
function of junction temperature function of junction temperature
(inductive load, VCE=600V, (IC = 0.15mA)
VGE=0/15V, IC=30A, RG=10Ω,
Dynamic test circuit in Figure E)

Power Semiconductors 6 Rev. 2.1 Nov 09

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Soft Switching Series

Eoff
7.0mJ
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

6.0mJ
6.0mJ
Eoff
5.0mJ

4.0mJ

3.0mJ 5.0mJ

2.0mJ

1.0mJ

4.0mJ
0.0mJ
10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω 80Ω
0A 10A 20A 30A 40A 50A

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 13. Typical turn-off energy as a Figure 14. Typical turn-off energy as a
function of collector current function of gate resistor
(inductive load, TJ=175°C, (inductive load, TJ=175°C, VCE=600V,
VCE=600V, VGE=0/15V, RG=10Ω, VGE=0/15V, IC=30A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

Eoff
7.5mJ
4.0mJ Eoff
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

7.0mJ

3.5mJ 6.5mJ

6.0mJ
3.0mJ
5.5mJ

2.5mJ 5.0mJ

4.5mJ

2.0mJ
4.0mJ
25°C 50°C 75°C 100°C 125°C 150°C 600V 700V 800V 900V 1000V 1100V

TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical turn-off energy as a Figure 16. Typical turn-off energy as a
function of junction temperature function of collector emitter
(inductive load, VCE=600V, voltage
VGE=0/15V, IC=30A, RG=10Ω, (inductive load, TJ=175°C,
Dynamic test circuit in Figure E) VGE=0/15V, IC=30A, RG=10Ω,
Dynamic test circuit in Figure E)

Power Semiconductors 7 Rev. 2.1 Nov 09

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Soft Switching Series

Ciss

15V
VGE, GATE-EMITTER VOLTAGE

320V
1nF
1280V

c, CAPACITANCE
10V

5V
100pF
Coss

Crss
0V
0nC 25nC 50nC 75nC 100nC 125nC 0V 10V 20V

QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge Figure 18. Typical capacitance as a function
(IC=30 A) of collector-emitter voltage
(VGE=0V, f = 1 MHz)

D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE

ZthJC, TRANSIENT THERMAL RESISTANCE

D=0.5
0.2
-1
10 K/W
0.1
0.2
-1
0.05 10 K/W

0.02 R,(K/W) τ, (s) 0.1 R,(K/W) τ, (s)

-2
0.2 1.51*10
-1
0.05 0.1385 5.49*10
-3
0.1514 1.14*10
-2 0.1354 7.70*10
10 K/W
-2
0.01 -4
0.1284 8.98*10
-4 0.1176 6.83*10
-5
0.02 0.087 1.94*10
R1 R2
R1 R2
0.01
single pulse
C1= τ1/R1 C2= τ2/R2
single pulse C1=τ1/R1 C2=τ2/R2
-2
-3 10 K/W
10 K/W 1µs 10µs 100µs 1ms 10ms 100ms
10µs 100µs 1ms 10ms 100ms 1s

tP, PULSE WIDTH tP, PULSE WIDTH

Figure 19. IGBT transient thermal Figure 20. Diode transient thermal
resistance impedance as a function of pulse width
(D = tp / T) (D=tP/T)

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 IHW30N160R2
Soft Switching Series

60A IF=60A
2.5V

50A

VF, FORWARD VOLTAGE

IF, FORWARD CURRENT

2.0V 30A

40A
15A
1.5V
TJ=25°C
30A

175°C 1.0V
20A

0.5V
10A

0A 0.0V
0.0V 0.5V 1.0V 1.5V 2.0V 2.5V 0°C 50°C 100°C 150°C

VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 21. Typical diode forward current as a Figure 22. Typical diode forward voltage as a
function of forward voltage function of junction temperature

Power Semiconductors 9 Rev. 2.1 Nov 09

 IHW30N160R2
Soft Switching Series

Power Semiconductors 10 Rev. 2.1 Nov 09

 IHW30N160R2
Soft Switching Series

i,v

diF /dt tr r =tS +tF

Qr r =QS +QF

tr r
IF tS tF

QS QF 10% Ir r m t
Ir r m
dir r /dt VR
90% Ir r m

Figure C. Definition of diodes

switching characteristics

τ1 τ2 τn
r1 r2 rn
Tj (t)

p(t)
r1 r2 rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses Figure E. Dynamic test circuit

Power Semiconductors 11 Rev. 2.1 Nov 09

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Soft Switching Series

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81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.

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types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies
components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
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Power Semiconductors 12 Rev. 2.1 Nov 09