VDRM = 4200 V Phase Control Thyristor

IT(AV)M = 4275 A
IT(RMS) = 6715 A
ITSM
VT0
= 64.5·103 A
= 0.95 V
5STP 38Q4200
rT = 0.13 m
Doc. No. 5SYA1051-03 Mar. 14

 Patented free-floating silicon technology

 Low on-state and switching losses
 Designed for traction, energy and industrial applications
 Optimum power handling capability
 Interdigitated amplifying gate

Blocking
Maximum rated values 1)
Parameter Symbol Conditions 5STP 38Q4200 Unit
f = 50 Hz, tp = 10 ms,
Tvj = 5…125 °C, Note 1
Max repetitive peak forward VDRM, VAK VDRM,VRRM 4200 V
and reverse blocking voltage VRRM

tp
t
Critical rate of rise of
dv/dtcrit Exp. to 0.67∙VDRM, Tvj = 125 °C 2000 V/µs
commutating voltage
Characteristic values
Parameter Symbol Conditions min typ max Unit
Forward leakage current IDRM VDRM, Tvj = 125 °C 400 mA
Reverse leakage current IRRM VRRM, Tvj = 125 °C 400 mA
Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below +5 °C.

Mechanical data
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Mounting force FM 81 90 108 kN
Acceleration a Device unclamped 50 m/s2
Acceleration a Device clamped 100 m/s2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m 2.1 kg
Housing thickness H FM = 90 kN, Ta = 25 °C 26.1 26.5 mm
Surface creepage distance DS 36 mm
Air strike distance Da 15 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur

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 5STP 38Q4200
On-state
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Average on-state current IT(AV)M Half sine wave, Tc = 70 °C 4275 A
RMS on-state current IT(RMS) 6715 A
Peak non-repetitive surge tp = 10 ms, Tvj = 125 °C,
ITSM 64.5·103 A
current sine half wave,
Limiting load integral I2t VD = VR= 0 V, after surge 20.8·106 A2s
Peak non-repetitive surge tp = 10 ms, Tvj = 125 °C,
ITSM 51.0·103 A
current sine half wave,
Limiting load integral I2t VR = 0.6·VRRM, after surge 13.0·106 A2s
Characteristic values
Parameter Symbol Conditions min typ max Unit
On-state voltage VT IT = 3000 A, Tvj = 125 °C 1.35 V
Threshold voltage V(T0) 0.95 V
IT = 2500 A - 7500 A, Tvj = 125 °C
Slope resistance rT 0.13 m
Tvj = 25 °C 100 mA
Holding current IH
Tvj = 125 °C 75 mA
Tvj = 25 °C 500 mA
Latching current IL
Tvj = 125 °C 350 mA

Switching
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Tvj = 125 °C, Cont.
250 A/µs
Critical rate of rise of on-state ITRM = 5000 A, f = 50 Hz
di/dtcrit
current VD  0.67·VDRM, Cont.
IFG = 2 A, tr = 0.5 µs 1000 A/µs
f = 1 Hz
Tvj = 125 °C, ITRM = 2000 A,
Circuit-commutated turn-off
tq VR = 200 V, diT/dt = -1.5 A/µs, 600 µs
time
VD  0.67VDRM, dvD/dt = 20 V/µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Reverse recovery charge Qrr Tvj = 125 °C, ITRM = 2000 A, 2500 5000 µAs
Reverse recovery current IRM VR = 200 V, diT/dt = -1.5 A/µs 45 95 A
Tvj = 25 °C, VD = 0.4VRM,
Gate turn-on delay time tgd 3 µs
IFG = 2 A, tr = 0.5 µs

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Doc. No. 5SYA1051-03 Mar. 14 page 2 of 7
 5STP 38Q4200
Triggering
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Peak forward gate voltage VFGM 12 V
Peak forward gate current IFGM 10 A
Peak reverse gate voltage VRGM 10 V
Average gate power loss PG(AV) see Fig. 7 W
Characteristic values
Parameter Symbol Conditions min typ max Unit
Gate-trigger voltage VGT Tvj = 25 °C 2.6 V
Gate-trigger current IGT Tvj = 25 °C 400 mA
Gate non-trigger voltage VGD VD = 0.4·VDRM, Tvjmax = 125 °C 0.3 V
Gate non-trigger current IGD VD = 0.4·VDRM, Tvjmax = 125 °C 10 mA

Thermal
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Operating junction
Tvj 125 °C
temperature range
Storage temperature range Tstg -40 140 °C
Characteristic values
Parameter Symbol Conditions min typ max Unit
Double-side cooled
Rth(j-c) 5 K/kW
Fm = 81... 108 kN
Thermal resistance junction Anode-side cooled
Rth(j-c)A 10 K/kW
to case Fm = 81... 108 kN
Cathode-side cooled
Rth(j-c)C 10 K/kW
Fm = 81... 108 kN
Double-side cooled
Rth(c-h) 1 K/kW
Thermal resistance case to Fm = 81... 108 kN
heatsink Single-side cooled
Rth(c-h) 2 K/kW
Fm = 81... 108 kN

Analytical function for transient thermal

impedance:

n
Zth(j - c)(t) =  R i (1- e- t/ i )
i 1
i 1 2 3 4
Ri(K/kW) 3.560 0.680 0.460 0.280
i(s) 0.4069 0.0559 0.0075 0.0018

Fig. 1 Transient thermal impedance (junction-to-

case) vs. time

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Doc. No. 5SYA1051-03 Mar. 14 page 3 of 7
 5STP 38Q4200

Max. on-state characteristic model:

VT125  ATvj  BTvj  IT  CTvj  ln( IT 1)  DTvj  IT
Valid for IT = 500 - 14000 A
A125 B125 C125 D125
341.7·10-3 90.0·10-6 76.28·10-3 2.31·10-3

Fig. 2 On-state voltage characteristics Fig. 3 On-state voltage characteristics,

Tvj = 125 °C, 10 ms half sine

Tcase (°C)
130
Double-sided cooling
125

120 DC
180° rectangular
115 180° sine
120° rectangular
110

105

100

95

90

85

80
5STP 38Q4200

75

70
0 1000 2000 3000 4000 5000 6000 7000
ITAV (A)
Fig. 4 On-state power dissipation vs. mean on-state Fig. 5 Max. permissible case temperature vs. mean
current, turn-on losses excluded on-state current, switching losses ignored

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Doc. No. 5SYA1051-03 Mar. 14 page 4 of 7
 5STP 38Q4200

IG (t)
IGM » 2..5 A
IGon ³ 1.5 IGT
100 % IGM diG/dt ³ 2 A/ms
90 % tr  1 ms
tp(IGM) » 5...20 ms

diG/dt
IGon

10 %

tr t
tp (IGM) tp (IGon)

Fig. 6 Recommended gate current waveform Fig. 7 Max. peak gate power loss

Fig. 8 Reverse recovery charge vs. decay rate of Fig. 9 Peak reverse recovery current vs. decay
on-state current rate of on-state current

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Doc. No. 5SYA1051-03 Mar. 14 page 5 of 7
 5STP 38Q4200
Turn-on and Turn-off losses

Fig. 10 Turn-on energy, half sinusoidal waves Fig. 11 Turn-on energy, rectangular waves

Fig. 12 Turn-off energy, half sinusoidal waves Fig. 13 Turn-off energy, rectangular waves

Total power loss for repetitive waveforms:

IT(t), V(t)
IT(t)
PTOT  PT  Won  f  Woff  f
-diT/dt
where
Qrr t T
1
V(t) PT   IT  VT (IT ) dt
-IRRM -V0 T0

-dv/dtcom -VRRM
Fig. 14 Current and voltage waveforms at turn-off Fig. 15 Relationships for power loss

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Doc. No. 5SYA1051-03 Mar. 14 page 6 of 7
 5STP 38Q4200

Fig. 16 Device Outline Drawing

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Please refer to http://www.abb.com/semiconductors for current version of documents.

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

ABB Switzerland Ltd Doc. No. 5SYA1051-03 Mar. 14

Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland

Telephone +41 (0)58 586 1419

Fax +41 (0)58 586 1306
Email [email protected]
Internet www.abb.com/semiconductors