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Isc N-Channel MOSFET Transistor IRFR7540, IIRFR7540: INCHANGE Semiconductor

This document provides specifications for the INCHANGE Semiconductor IRFR7540 N-channel MOSFET transistor. Some key features include a static drain-source on-resistance of less than 4.8mΩ, enhancement mode operation, and 100% avalanche testing. It is intended for synchronous rectifier applications. The document lists maximum ratings, thermal characteristics, and electrical characteristics including breakdown voltage, gate threshold voltage, on-resistance, and leakage currents.

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60 views2 pages

Isc N-Channel MOSFET Transistor IRFR7540, IIRFR7540: INCHANGE Semiconductor

This document provides specifications for the INCHANGE Semiconductor IRFR7540 N-channel MOSFET transistor. Some key features include a static drain-source on-resistance of less than 4.8mΩ, enhancement mode operation, and 100% avalanche testing. It is intended for synchronous rectifier applications. The document lists maximum ratings, thermal characteristics, and electrical characteristics including breakdown voltage, gate threshold voltage, on-resistance, and leakage currents.

Uploaded by

kalangho
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor

isc N-Channel MOSFET Transistor IRFR7540, IIRFR7540

·FEATURES
·Static drain-source on-resistance:
RDS(on)≤4.8mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

·DESCRITION
·Synchronous rectifier applications

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage 60 V

VGS Gate-Source Voltage ±20 V

ID Drain Current-Continuous 110 A

IDM Drain Current-Single Pulsed 440 A

PD Total Dissipation @TC=25℃ 140 W

Tj Max. Operating Junction Temperature 175 ℃

Tstg Storage Temperature -55~175 ℃

·THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Channel-to-case thermal resistance


Rth(j-c) 1.05 ℃/W

Channel-to-ambient thermal resistance


Rth(j-a) 110 ℃/W

isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor

isc N-Channel MOSFET Transistor IRFR7540, IIRFR7540

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 60 V

VGS(th) Gate Threshold Voltage VDS=VGS; ID=100μA 2.1 3.7 V

RDS(on) Drain-Source On-Resistance VGS=10V; ID=66A 4.8 mΩ

IGSS Gate-Source Leakage Current VGS= ±20V ±0.1 μA

IDSS Drain-Source Leakage Current VDS=60V; VGS= 0V 1 μA

VSD Diode forward voltage Is=66A, VGS = 0V 1.2 V

isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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