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Audio Frequency Power Amplifier Applications: Maximum Ratings

This document provides specifications for the Toshiba 2SB1015A transistor. It is a silicon PNP triple diffused transistor intended for use in audio frequency power amplifier applications. Some key specifications include a maximum collector saturation voltage of -1.7V, a collector power dissipation rating of 25W, and DC current gain values ranging from 20 to 200 depending on operating conditions. Electrical characteristics such as cutoff currents, breakdown voltages, and switching times are also provided.

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0% found this document useful (0 votes)
72 views4 pages

Audio Frequency Power Amplifier Applications: Maximum Ratings

This document provides specifications for the Toshiba 2SB1015A transistor. It is a silicon PNP triple diffused transistor intended for use in audio frequency power amplifier applications. Some key specifications include a maximum collector saturation voltage of -1.7V, a collector power dissipation rating of 25W, and DC current gain values ranging from 20 to 200 depending on operating conditions. Electrical characteristics such as cutoff currents, breakdown voltages, and switching times are also provided.

Uploaded by

H-mao Auzaque
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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2SB1015A

TOSHIBA Transistor Silicon PNP Triple Diffused Type

2SB1015A
Audio Frequency Power Amplifier Applications
Unit: mm

• Low collector saturation voltage: VCE (sat) = −1.7 V (max)


(IC = −3 A, IB = −0.3 A)
• Collector power dissipation: PC = 25 W (Tc = 25°C)

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO −60 V


Collector-emitter voltage VCEO −60 V
Emitter-base voltage VEBO −7 V
Collector current IC −3 A
Base current IB −0.5 A

Collector power Ta = 25°C 2.0


PC W
dissipation Tc = 25°C 25
Junction temperature Tj 150 °C
JEDEC ―
Storage temperature range Tstg −55~150 °C
JEITA SC-67
TOSHIBA 2-10R1A

Weight: 1.7 g (typ.)

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2SB1015A
Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO VCB = −60 V, IE = 0   −100 µA


Emitter cut-off current IEBO VEB = −7 V, IC = 0   −100 µA
Collector-emitter breakdown voltage V (BR) CEO IC = −50 mA, IB = 0 −60   V
hFE (1)
VCE = −5 V, IC = −0.5 A 60  200
DC current gain (Note)
hFE (2) VCE = −5 V, IC = −3 A 20  
Collector-emitter saturation voltage VCE (sat) IC = −3 A, IB = −0.3 A  −0.5 −1.7 V
Base-emitter voltage VBE VCE = −5 A, IC = −0.5 A  −0.7 −1.0 V
Transition frequency fT VCE = −5 V, IC = −0.5 A  9  MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz  150  pF

Turn-on time ton Output  0.4 


IB1
20 µs Input

15 Ω
Switching time Storage time tstg IB2 IB2  1.7  µs
IB1

VCC = −30 V

Fall time tf  0.5 


−IB1 = IB2 = 0.2 A, duty cycle <
= 1%

Note: hFE (1) classification O: 60~120, Y: 100~200

Marking

B1015A Product No.


Lot No.

hFE classification (O/Y)

Explanation of Lot No.

Month of manufacture (January to December are denoted by letters A to L respectively.)


Year of manufacture (Last decimal digit of the year of manufacture)

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2SB1015A

IC – VCE IC – VBE
−4 −3.0

Common emitter
Common emitter
Tc = 25°C
−80 −70 −60 VCE = −5 V
(A)

(A)
−3
−50
−2.0
IC

IC
−40
Tc = 100°C 25 −25
Collector current

Collector current
−30
−2
−20

IB = −10 mA −1.0

−1

0
0 0
0 −1 −2 −3 −4 −5 0 −0.4 −0.8 −1.2 −1.6

Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V)

hFE – IC VCE (sat) – IC


1000 −1
Collector-emitter saturation voltage

Common emitter Common emitter


VCE = −5 V −0.5 IC/IB = 10
500
Tc = 100°C
hFE

−0.3
VCE (sat) (V)

300
25
Tc = 100°C
DC current gain

25
−25
−0.1
100 −25

−0.05
50

−0.02
−0.02 −0.1 −0.3 −1 −3 −5
20
−0.02 −0.1 −0.3 −1 −3
Collector current IC (A)
Collector current IC (A)

Safe Operating Area


Rth (t) – tw −10
1000
IC max (pulsed)* 1 ms*
(1) Without heat sink
−5 10 ms*
(A)

(2) Infinite heat sink


Transient thermal resistance

100 ms*
IC max (continuous)
100 −3
IC

1 s*
Rth (t) (°C/W)

(1) Ta = 25°C
Collector current

DC operation
10 Tc = 25°C
−1
(2) Tc = 25°C *: Single nonrepetitive pulse
Tc = 25°C
1 −0.5
Curves must be derated linearly
with increase in temperature.
VCEO max
0.1 −0.2
10−3 10 −2
10 −1
1 10 10 2
−1 −3 −10 −30 −100

Time t (s) Collector-emitter voltage VCE (V)

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2SB1015A

RESTRICTIONS ON PRODUCT USE 000707EAA

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

• The information contained herein is subject to change without notice.

4 2003-02-04

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