Dual/Quad Rail-to-Rail

Operational Amplifiers
OP295/OP495
FEATURES PIN CONFIGURATIONS
Rail-to-rail output swing OUT A 1 8 V+
Single-supply operation: 3 V to 36 V –IN A 2 OP295 7 OUT B
TOP VIEW
Low offset voltage: 300 μV +IN A 3 (Not to Scale) 6 –IN B

00331-001
Gain bandwidth product: 75 kHz V– 4 5 +IN B
High open-loop gain: 1000 V/mV
Figure 1. 8-Lead Narrow-Body SOIC_N
Unity-gain stable S Suffix (R-8)
Low supply current/per amplifier: 150 μA maximum

OUT A 1 8 V+
APPLICATIONS OP295
–IN A 2 7 OUT B
Battery-operated instrumentation +IN A 3 6 –IN B

00331-002
Servo amplifiers V– 4 5 +IN B
Actuator drives
Figure 2. 8-Lead PDIP
Sensor conditioners P Suffix (N-8)
Power supply control

OUT A 1 14 OUT D
GENERAL DESCRIPTION –IN A 2 13 –IN D
Rail-to-rail output swing combined with dc accuracy are the +IN A 3 12 +IN D
key features of the OP495 quad and OP295 dual CBCMOS V+ 4 OP495 11 V–
operational amplifiers. By using a bipolar front end, lower noise +IN B 5 10 +IN C
and higher accuracy than those of CMOS designs have been –IN B 6 9 –IN C

00331-003
achieved. Both input and output ranges include the negative OUT B 7 8 OUT C

supply, providing the user with zero-in/zero-out capability. For

Figure 3. 14-Lead PDIP
users of 3.3 V systems such as lithium batteries, the OP295/OP495 P Suffix (N-14)
are specified for 3 V operation.
Maximum offset voltage is specified at 300 μV for 5 V operation,
OUT A 1 16 OUT D
and the open-loop gain is a minimum of 1000 V/mV. This yields
–IN A 2 15 –IN D
performance that can be used to implement high accuracy systems, +IN A 3 14 +IN D
even in single-supply designs. OP495
V+ 4 TOP VIEW 13 V–
(Not to Scale)
The ability to swing rail-to-rail and supply 15 mA to the load +IN B 5 12 +IN C

makes the OP295/OP495 ideal drivers for power transistors and –IN B 6 11 –IN C
OUT B 7 10 OUT C
H bridges. This allows designs to achieve higher efficiencies and
NC 8 9 NC
00331-004

to transfer more power to the load than previously possible

without the use of discrete components. NC = NO CONNECT

Figure 4. 16-Lead SOIC_W

For applications such as transformers that require driving S Suffix (RW-16)
inductive loads, increases in efficiency are also possible.
Stability while driving capacitive loads is another benefit of this The OP295 and OP495 are specified over the extended indus-
design over CMOS rail-to-rail amplifiers. This is useful for trial (−40°C to +125°C) temperature range. The OP295 is
driving coax cable or large FET transistors. The OP295/OP495 available in 8-lead PDIP and 8-lead SOIC_N surface-mount
are stable with loads in excess of 300 pF. packages. The OP495 is available in 14-lead PDIP and 16-lead
SOIC_W surface-mount packages.

Rev. G
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 www.analog.com
Trademarks and registered trademarks are the property of their respective owners. Fax: 781.461.3113 ©2009 Analog Devices, Inc. All rights reserved.
OP295/OP495

TABLE OF CONTENTS
Features .............................................................................................. 1 Direct Access Arrangement ...................................................... 10
Applications ....................................................................................... 1 Single-Supply Instrumentation Amplifier .............................. 10
General Description ......................................................................... 1 Single-Supply RTD Thermometer Amplifier ......................... 11
Pin Configurations ........................................................................... 1 Cold Junction Compensated, Battery-Powered
Revision History ............................................................................... 2 Thermocouple Amplifier .......................................................... 11

Specifications..................................................................................... 3 5 V Only, 12-Bit DAC That Swings 0 V to 4.095 V.................... 11

Electrical Characteristics ............................................................. 3 4 mA to 20 mA Current-Loop Transmitter ............................ 12

Absolute Maximum Ratings............................................................ 5 3 V Low Dropout Linear Voltage Regulator ............................. 12

Thermal Resistance ...................................................................... 5 Low Dropout, 500 mA Voltage Regulator with Foldback
Current Limiting ........................................................................ 12
ESD Caution .................................................................................. 5
Square Wave Oscillator .............................................................. 13
Typical Performance Characteristics ............................................. 6
Single-Supply Differential Speaker Driver .............................. 13
Applications ....................................................................................... 9
High Accuracy, Single-Supply, Low Power Comparator ...... 13
Rail-to-Rail Application Information ........................................ 9
Outline Dimensions ....................................................................... 14
Low Drop-Out Reference ............................................................ 9
Ordering Guide .......................................................................... 16
Low Noise, Single-Supply Preamplifier ..................................... 9
Driving Heavy Loads ................................................................. 10

REVISION HISTORY
8/09—Rev. F to Rev. G 3/02—Rev. B to Rev. C
Added Figure 18................................................................................ 8 Figure changes to Pin Connections ................................................1
Updated Outline Dimensions ....................................................... 17 Deleted OP295GBC and OP495GBC from Ordering Guide ......3
Deleted Wafer Test Limits Table ......................................................3
3/08—Rev. E to Rev. F
Changes to Absolute Maximum Ratings ........................................4
Changes to Offset Voltage Unit in Table 1 .................................... 3
Deleted Dice Characteristics ............................................................4
Updated Outline Dimensions ....................................................... 14
Changes to Ordering Guide .......................................................... 16
5/06—Rev. D to Rev. E
Updated Format .................................................................. Universal
Changes to Features.......................................................................... 1
Changes to Pin Connections ........................................................... 1
Updated Outline Dimensions ....................................................... 14
Changes to Ordering Guide .......................................................... 15
2/04—Rev. C to Rev. D
Changes to General Description .................................................... 1
Changes to Specifications ................................................................ 2
Changes to Absolute Maximum Ratings ....................................... 4
Changes to Ordering Guide ............................................................ 4
Updated Outline Dimensions ....................................................... 12

Rev. G | Page 2 of 16
 OP295/OP495

SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VS = 5.0 V, VCM = 2.5 V, TA = 25°C, unless otherwise noted.

Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage VOS 30 300 μV
−40°C ≤ TA ≤ +125°C 800 μV
Input Bias Current IB 8 20 nA
−40°C ≤ TA ≤ +125°C 30 nA
Input Offset Current IOS ±1 ±3 nA
−40°C ≤ TA ≤ +125°C ±5 nA
Input Voltage Range VCM 0 4.0 V
Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 4.0 V, −40°C ≤ TA ≤ +125°C 90 110 dB
Large Signal Voltage Gain AVO RL = 10 kΩ, 0.005 ≤ VOUT ≤ 4.0 V 1000 10,000 V/mV
RL = 10 kΩ, −40°C ≤ TA ≤ +125°C 500 V/mV
Offset Voltage Drift ΔVOS/ΔT 1 5 μV/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing High VOH RL = 100 kΩ to GND 4.98 5.0 V
RL = 10 kΩ to GND 4.90 4.94 V
IOUT = 1 mA, −40°C ≤ TA ≤ +125°C 4.7 V
Output Voltage Swing Low VOL RL = 100 kΩ to GND 0.7 2 mV
RL = 10 kΩ to GND 0.7 2 mV
IOUT = 1 mA, −40°C ≤ TA ≤ +125°C 90 mV
Output Current IOUT ±11 ±18 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR ±1.5 V ≤ VS ≤ ±15 V 90 110 dB
±1.5 V ≤ VS ≤ ±15 V, –40°C ≤ TA ≤ +125°C 85 dB
Supply Current per Amplifier ISY VOUT = 2.5 V, RL = ∞, −40°C ≤ TA ≤ +125°C 150 μA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 10 kΩ 0.03 V/μs
Gain Bandwidth Product GBP 75 kHz
Phase Margin θO 86 Degrees
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 1.5 μV p-p
Voltage Noise Density en f = 1 kHz 51 nV/√Hz
Current Noise Density in f = 1 kHz <0.1 pA/√Hz

VS = 3.0 V, VCM = 1.5 V, TA = 25°C, unless otherwise noted.

Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage VOS 100 500 μV
Input Bias Current IB 8 20 nA
Input Offset Current IOS ±1 ±3 nA
Input Voltage Range VCM 0 2.0 V
Common-Mode Rejection Ration CMRR 0 V ≤ VCM ≤ 2.0 V, −40°C ≤ TA ≤ +125°C 90 110 dB
Large Signal Voltage Gain AVO RL = 10 kΩ 750 V/mV
Offset Voltage Drift ∆VOS/∆T 1 μV/°C

Rev. G | Page 3 of 16
OP295/OP495
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT CHARACTERISTICS
Output Voltage Swing High VOH RL = 10 kΩ to GND 2.9 V
Output Voltage Swing Low VOL RL = 10 kΩ to GND 0.7 2 mV
POWER SUPPLY
Power Supply Rejection Ratio PSRR ±1.5 V ≤ VS ≤ ±15 V 90 110 dB
±1.5 V ≤ VS ≤ ±15 V, −40°C ≤ TA ≤ +125°C 85 dB
Supply Current per Amplifier ISY VOUT = 1.5 V, RL = ∞, −40°C ≤ TA ≤ +125°C 150 μA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 10 kΩ 0.03 V/μs
Gain Bandwidth Product GBP 75 kHz
Phase Margin θO 85 Degrees
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 1.6 μV p-p
Voltage Noise Density en f = 1 kHz 53 nV/√Hz
Current Noise Density in f = 1 kHz <0.1 pA/√Hz

VS = ±15.0 V, TA = 25°C, unless otherwise noted.

Table 3.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage VOS 300 500 μV
−40°C ≤ TA ≤ +125°C 800 μV
Input Bias Current IB VCM = 0 V 7 20 nA
VCM = 0 V, −40°C ≤ TA ≤ +125°C 30 nA
Input Offset Current IOS VCM = 0 V ±1 ±3 nA
VCM = 0 V, −40°C ≤ TA ≤ +125°C ±5 nA
Input Voltage Range VCM −15 +13.5 V
Common-Mode Rejection Ratio CMRR −15.0 V ≤ VCM ≤ +13.5 V, −40°C ≤ TA ≤ +125°C 90 110 dB
Large Signal Voltage Gain AVO RL = 10 kΩ 1000 4000 V/mV
Offset Voltage Drift ΔVOS/ΔT 1 μV/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing High VOH RL = 100 kΩ to GND 14.95 V
RL = 10 kΩ to GND 14.80 V
Output Voltage Swing Low VOL RL = 100 kΩ to GND −14.95 V
RL = 10 kΩ to GND −14.85 V
Output Current IOUT ±15 ±25 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = ±1.5 V to ±15 V 90 110 dB
VS = ±1.5 V to ±15 V, −40°C ≤ TA ≤ +125°C 85 dB
Supply Current per Amplifier ISY VO = 0 V, RL = ∞, VS = ±18 V, −40°C ≤ TA ≤ +125°C 175 μA
Supply Voltage Range VS 3 (± 1.5) 36 (± 18) V
DYNAMIC PERFORMANCE
Slew Rate SR RL = 10 kΩ 0.03 V/μs
Gain Bandwidth Product GBP 85 kHz
Phase Margin θO 83 Degrees
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 1.25 μV p-p
Voltage Noise Density en f = 1 kHz 45 nV/√Hz
Current Noise Density in f = 1 kHz <0.1 pA/√Hz

Rev. G | Page 4 of 16
 OP295/OP495

ABSOLUTE MAXIMUM RATINGS

THERMAL RESISTANCE
Table 4.
Parameter1 Rating θJA is specified for worst case mounting conditions; that is, θJA
is specified for device in socket for PDIP; θJA is specified for
Supply Voltage ±18 V
device soldered to printed circuit board for SOIC package.
Input Voltage ±18 V
Differential Input Voltage2 36 V Table 5. Thermal Resistance
Output Short-Circuit Duration Indefinite Package Type θJA θJC Unit
Storage Temperature Range 8-Lead PDIP (N-8) 103 43 °C/W
P, S Packages −65°C to +150°C 8-Lead SOIC_N (R-8) 158 43 °C/W
Operating Temperature Range 14-Lead PDIP (N-14) 83 39 °C/W
OP295G, OP495G –40°C to +125°C 16-Lead SOIC_W (RW-16) 98 30 °C/W
Junction Temperature Range
P, S Packages –65°C to +150°C
ESD CAUTION
Lead Temperature (Soldering, 60 sec) 300°C
1
Absolute maximum ratings apply to packaged parts, unless otherwise noted.
2
For supply voltages less than ±18 V, the absolute maximum input voltage is
equal to the supply voltage.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.

Rev. G | Page 5 of 16
OP295/OP495

TYPICAL PERFORMANCE CHARACTERISTICS

140 200
BASED ON 600 OP AMPS VS = 5V
TA = 25°C
175
120
150
SUPPLY CURRENT (µA)

100 VS = 36V
125
VS = 5V

UNITS
80 100
VS = 3V
75
60
50
40
25

20 0

00331-005

00331-008
–50 –25 0 25 50 75 100 –250 –200 –150 –100 –50 0 50 100 150 200 250
TEMPERATURE (°C) INPUT OFFSET VOLTAGE (µV)
Figure 5. Supply Current Per Amplifier vs. Temperature Figure 8. OP295 Input Offset (VOS) Distribution

15.2 250
BASED ON 600 OP AMPS
+ OUTPUT SWING (V)

VS = ±15V RL = 100kΩ VS = 5V
15.0 225 –40°C ≤ TA ≤ +85°C

14.8
RL = 10kΩ 200
14.6
175
14.4 RL = 2kΩ
150
14.2
UNITS

125

100
– OUTPUT SWING (V)

–14.4
RL = 2kΩ 75
–14.6

–14.8 RL = 10kΩ 50

–15.0 25
RL = 100kΩ
–15.2 0
00331-006

0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2

00331-009
–50 –25 0 25 50 75 100
TEMPERATURE (°C) TCVOS (µV/°C)

Figure 6. Output Voltage Swing vs. Temperature Figure 9. OP295 TCVOS Distribution

3.1 5.1
VS = 3V VS = 5V

3.0 5.0
OUTPUT VOLTAGE SWING (V)

OUTPUT VOLTAGE SWING (V)

RL = 100kΩ RL = 100kΩ

2.9 RL = 10kΩ 4.9

RL = 10kΩ

2.8 4.8

2.7 4.7
RL = 2kΩ
RL = 2kΩ
2.6 4.6

2.5 4.5
00331-007

00331-010

–50 –25 0 25 50 75 100 –50 –25 0 25 50 75 100

TEMPERATURE (°C) TEMPERATURE (°C)

Figure 7. Output Voltage Swing vs. Temperature Figure 10. Output Voltage Swing vs. Temperature

Rev. G | Page 6 of 16
 OP295/OP495
500 40
BASED ON 1200 OP AMPS VS = 5V
450 TA = 25°C SOURCE
35
400
30 SINK

OUTPUT CURRENT (mA)

350 VS = ±15V

300 25
SOURCE
UNITS

250 20
SINK
200
15
150
VS = +5V
10
100

50 5

0 0

00331-011
–100 –50 0 50 100 150 200 250 300

00331-013
–50 –25 0 25 50 75 100
INPUT OFFSET VOLTAGE (µV)
TEMPERATURE (°C)

Figure 11. OP495 Input Offset (VOS) Distribution Figure 14. Output Current vs. Temperature

500 100
BASED ON 1200 OP AMPS VS = 5V VS = ±15V
450 –40°C ≤ TA ≤ +85°C VO = ±10V

400

OPEN-LOOP GAIN (V/µV)

350

300
RL = 100kΩ
UNITS

250 10

200

150 RL = 10kΩ

100

50 RL = 2kΩ

0 1

00331-014
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 –50 –25 0 25 50 75 100
00331-012

TCVOS (µV/°C) TEMPERATURE (°C)

Figure 12. OP495 TCVOS Distribution Figure 15. Open-Loop Gain vs. Temperature

20 12
VS = 5V VS = 5V
VO = 4V
10
16
INPUT BIAS CURRENT (nA)

OPEN-LOOP GAIN (V/µV)

8
12
RL = 100kΩ
6
RL = 10kΩ
8
4

RL = 2kΩ
4
2

0 0
00331-033

00331-015

–50 –25 0 25 50 75 100 –50 –25 0 25 50 75 100

TEMPERATURE (°C) TEMPERATURE (°C)

Figure 13. Input Bias Current vs. Temperature Figure 16. Open-Loop Gain vs. Temperature

Rev. G | Page 7 of 16
OP295/OP495
120 120
VS = 5V
TA = 25°C
100 100
1V
OUTPUT VOLTAGE Δ TO RAIL

80 80

MAGNITUDE (dB)
100mV 60 60
SOURCE

PHASE (°)
40 40
10mV
SINK 20 20

0 0
1mV

–20 OP295 –20

TA = 25°C
VSY = ±15V
100µV –40 –40

00331-016
1µA 10µA 100µA 1mA 10mA

00331-034
0.01 0.1 1 10 100 1k
LOAD CURRENT
FREQUENCY (KHz)
Figure 17. Output Voltage to Supply Rail vs. Load Current
Figure 18. OP295 Gain and Phase vs. Frequency

Rev. G | Page 8 of 16
 OP295/OP495

APPLICATIONS
RAIL-TO-RAIL APPLICATION INFORMATION R5 and R6 set the gain of 1000, making this circuit ideal for
maximizing dynamic range when amplifying low level signals in
The OP295/OP495 have a wide common-mode input range single-supply applications. The OP295/OP495 provide rail-to-
extending from ground to within about 800 mV of the positive rail output swings, allowing this circuit to operate with 0 V to
supply. There is a tendency to use the OP295/OP495 in buffer 5 V outputs. Only half of the OP295/OP495 is used, leaving the
applications where the input voltage could exceed the common- other uncommitted op amp for use elsewhere.
mode input range. This can initially appear to work because of
0.1µF
the high input range and rail-to-rail output range. But above the
common-mode input range, the amplifier is, of course, highly LED R1 10µF
nonlinear. For this reason, there must be some minimal amount Q2 + –
2N3906
of gain when rail-to-rail output swing is desired. Based on the
input common-mode range, this gain should be at least 1.2. 3 5
R6
VIN 2 6 10Ω
LOW DROP-OUT REFERENCE Q1 MAT03 Q2

The OP295/OP495 can be used to gain up a 2.5 V or other low 1 7 R5 C2

10kΩ 10µF
2 – 8
voltage reference to 4.5 V for use with high resolution ADCs R7 VOUT
510Ω 1
that operate from 5 V only supplies. The circuit in Figure 19
C1 3 + 4 OP295/OP495
supplies up to 10 mA. Its no-load drop-out voltage is only 1500pF
R2
20 mV. This circuit supplies over 3.5 mA with a 5 V supply. 27kΩ R3 R4
R8
100Ω
16kΩ

00331-018
5V 0.001µF

5V Figure 20. Low Noise Single-Supply Preamplifier

20kΩ
– The input noise is controlled by the MAT03 transistor pair
2 10Ω VOUT = 4.5V
and the collector current level. Increasing the collector current
REF43 6 + 1µF TO + reduces the voltage noise. This particular circuit was tested
10µF
1/2 with 1.85 mA and 0.5 mA of current. Under these two cases,
00331-017

4
OP295/OP495 the input voltage noise was 3.1 nV/√Hz and 10 nV/√Hz, respect-
Figure 19. 4.5 V, Low Drop-Out Reference ively. The high collector currents do lead to a tradeoff in supply
current, bias current, and current noise. All of these parameters
LOW NOISE, SINGLE-SUPPLY PREAMPLIFIER increase with increasing collector current. For example, typically
Most single-supply op amps are designed to draw low supply the MAT03 has an hFE = 165. This leads to bias currents of 11 μA
current at the expense of having higher voltage noise. This tradeoff and 3 μA, respectively.
may be necessary because the system must be powered by a Based on the high bias currents, this circuit is best suited for
battery. However, this condition is worsened because all circuit applications with low source impedance such as magnetic
resistances tend to be higher; as a result, in addition to the op pickups or low impedance strain gauges. Furthermore, a high
amp’s voltage noise, Johnson noise (resistor thermal noise) is source impedance degrades the noise performance. For
also a significant contributor to the total noise of the system. example, a 1 kΩ resistor generates 4 nV/√Hz of broadband
The choice of monolithic op amps that combine the character- noise, which is already greater than the noise of the preamp.
istics of low noise and single-supply operation is rather limited. The collector current is set by R1 in combination with the LED
Most single-supply op amps have noise on the order of 30 nV/√Hz and Q2. The LED is a 1.6 V Zener diode that has a temperature
to 60 nV/√Hz, and single-supply amplifiers with noise below coefficient close to that of the Q2 base-emitter junction, which
5 nV/√Hz do not exist. provides a constant 1.0 V drop across R1. With R1 equal to
To achieve both low noise and low supply voltage operation, 270 Ω, the tail current is 3.7 mA and the collector current is half
discrete designs may provide the best solution. The circuit in that, or 1.85 mA. The value of R1 can be altered to adjust the
Figure 20 uses the OP295/OP495 rail-to-rail amplifier and a collector current. When R1 is changed, R3 and R4 should also
matched PNP transistor pair—the MAT03—to achieve zero- be adjusted. To maintain a common-mode input range that
in/zero-out single-supply operation with an input voltage noise includes ground, the collectors of the Q1 and Q2 should not go
of 3.1 nV/√Hz at 100 Hz. above 0.5 V; otherwise, they could saturate. Thus, R3 and R4
must be small enough to prevent this condition. Their values
and the overall performance for two different values of R1 are
summarized in Table 6.

Rev. G | Page 9 of 16
OP295/OP495
Finally, the potentiometer, R8, is needed to adjust the offset
voltage to null it to zero. Similar performance can be obtained
using an OP90 as the output amplifier with a savings of about 100
90
185 μA of supply current. However, the output swing does not
include the positive rail, and the bandwidth reduces to approxi-
mately 250 Hz.

Table 6. Single-Supply Low Noise Preamp Performance

IC = 1.85 mA IC = 0.5 mA 10

R1 270 Ω 1.0 kΩ 0%

R3, R4 200 Ω 910 Ω

00331-020
2V 2V 1ms
en @ 100 Hz 3.15 nV/√Hz 8.6 nV/√Hz
en @ 10 Hz 4.2 nV/√Hz 10.2 nV/√Hz Figure 22. H Bridge Outputs
ISY 4.0 mA 1.3 mA
DIRECT ACCESS ARRANGEMENT
IB 11 μA 3 μA
Bandwidth 1 kHz 1 kHz The OP295/OP495 can be used in a single-supply direct access
Closed-Loop Gain 1000 1000 arrangement (DAA), as shown in Figure 23. This figure shows
a portion of a typical DM capable of operating from a single 5 V
DRIVING HEAVY LOADS supply, and it may also work on 3 V supplies with minor modi-
The OP295/OP495 are well suited to drive loads by using a fications. Amplifier A2 and Amplifier A3 are configured so that
power transistor, Darlington, or FET to increase the current to the transmit signal, TxA, is inverted by A2 and is not inverted
the load. The ability to swing to either rail can assure that the by A3. This arrangement drives the transformer differentially so
device is turned on hard. This results in more power to the load the drive to the transformer is effectively doubled over a single
and an increase in efficiency over using standard op amps with amplifier arrangement. This application takes advantage of the
their limited output swing. Driving power FETs is also possible ability of the OP295/OP495 to drive capacitive loads and to save
with the OP295/OP495 because of their ability to drive capaci- power in single-supply applications.
tive loads of several hundred picofarads without oscillating. 390pF

Without the addition of external transistors, the OP295/OP495 37.4kΩ

can drive loads in excess of ±15 mA with ±15 V or +30 V OP295/
OP495 20kΩ
0.1µF
supplies. This drive capability is somewhat decreased at lower –
RxA A1
supply voltages. At ±5 V supplies, the drive current is ±11 mA. +
0.0047µF
Driving motors or actuators in two directions in a single-supply
3.3kΩ 20kΩ
application is often accomplished using an H bridge. The
principle is demonstrated in Figure 21. From a single 5 V +
475Ω
OP295/ A2
supply, this driver is capable of driving loads from 0.8 V to OP495
–

4.2 V in both directions. Figure 22 shows the voltages at the

22.1kΩ
inverting and noninverting outputs of the driver. There is a
0.1µF 20kΩ 750pF
small crossover glitch that is frequency-dependent; it does not TxA 1:1
0.033µF
cause problems unless used in low distortion applications, such 20kΩ

as audio. If this is used to drive inductive loads, diode clamps 20kΩ

should be added to protect the bridge from inductive kickback.
OP295/ –
00331-021

5V OP495 A3
2.5V REF +
2N2222 2N2222
Figure 23. Direct Access Arrangement
10kΩ
0 ≤ VIN ≤ 2.5V OUTPUTS SINGLE-SUPPLY INSTRUMENTATION AMPLIFIER
5kΩ
–
The OP295/OP495 can be configured as a single-supply
1.67V +
instrumentation amplifier, as shown in Figure 24. For this
2N2907
10kΩ 10kΩ 2N2907 example, VREF is set equal to V+/2, and VO is measured with
respect to VREF. The input common-mode voltage range
– includes ground, and the output swings to both rails.
00331-019

Figure 21. H Bridge

Rev. G | Page 10 of 16
 OP295/OP495
V+ 1/2 COLD JUNCTION COMPENSATED, BATTERY-
OP295/
+ 5 + 8 OP495 POWERED THERMOCOUPLE AMPLIFIER
7 VO
VIN 1/2 The 150 μA quiescent current per amplifier consumption of the
OP295/ 6 – 4
OP495 OP295/OP495 makes them useful for battery-powered temperature
– 3 +
measuring instruments. The K-type thermocouple terminates
1

2 – into an isothermal block where the terminated junctions’ ambient

R1 R2 R3 R4 temperatures can be continuously monitored and corrected by
100kΩ 20kΩ 20kΩ 100kΩ
summing an equal but opposite thermal EMF to the amplifier,
VREF thereby canceling the error introduced by the cold junctions.
RG
1.235V 24.9kΩ

( )

00331-022
VO = 5 + 200kΩ VIN + VREF
AD589 +
RG 9V
–
ISOTHERMAL SCALE
Figure 24. Single-Supply Instrumentation Amplifier BLOCK ADJUST
7.15kΩ 24.3kΩ
1N914 1% 1%
Resistor RG sets the gain of the instrumentation amplifier. 20kΩ
1.5MΩ 24.9kΩ 4.99kΩ 1.33MΩ
Minimum gain is 6 (with no RG). All resistors should be matched ALUMEL
– 1% 1% 1%
2 – 8
in absolute value as well as temperature coefficient to maximize AL COLD 500Ω 1 VO
common-mode rejection performance and minimize drift. This JUNCTIONS 10-TURN
3 +
instrumentation amplifier can operate from a supply voltage as + ZERO
4 OP295/
CR
ADJUST OP495
CHROMEL
low as 3 V. 5V = 500°C
475Ω 2.1kΩ
K-TYPE 0V = 0°C

00331-024
1% 1%
SINGLE-SUPPLY RTD THERMOMETER AMPLIFIER THERMOCOUPLE
40.7µV/°C
This RTD amplifier takes advantage of the rail-to-rail swing of Figure 26. Battery-Powered, Cold-Junction Compensated
the OP295/OP495 to achieve a high bridge voltage in spite of a Thermocouple Amplifier
low 5 V supply. The OP295/OP495 amplifier servos a constant To calibrate, immerse the thermocouple measuring junction in
200 μA current to the bridge. The return current drops across a 0°C ice bath and adjust the 500 Ω zero-adjust potentiometer
the parallel resistors 6.19 kΩ and 2.55 MΩ, developing a voltage to 0 V out. Then immerse the thermocouple in a 250°C tem-
that is servoed to 1.235 V, which is established by the AD589 perature bath or oven and adjust the scale-adjust potentiometer
band gap reference. The 3-wire RTD provides an equal line for an output voltage of 2.50 V, which is equivalent to 250°C.
resistance drop in both 100 Ω legs of the bridge, thus improving Within this temperature range, the K-type thermocouple is
the accuracy. quite accurate and produces a fairly linear transfer characteristic.
The AMP04 amplifies the differential bridge signal and converts Accuracy of ±3°C is achievable without linearization.
it to a single-ended output. The gain is set by the series resis- Even if the battery voltage is allowed to decay to as low as 7 V,
tance of the 332 Ω resistor plus the 50 Ω potentiometer. The the rail-to-rail swing allows temperature measurements to 700°C.
gain scales the output to produce a 4.5 V full scale. The 0.22 μF However, linearization may be necessary for temperatures above
capacitor to the output provides a 7 Hz low-pass filter to keep 250°C, where the thermocouple becomes rather nonlinear. The
noise at a minimum. circuit draws just under 500 μA supply current from a 9 V
battery.
ZERO ADJ 50Ω
200Ω
10-TURNS
5V
332Ω
5 V ONLY, 12-BIT DAC THAT SWINGS 0 V TO 4.095 V
26.7kΩ 26.7kΩ 7
0.5% 0.5%
3 1 Figure 27 shows a complete voltage output DAC with wide
+ 8 0.22µF
output voltage swing operating off a single 5 V supply. The
AMP04 VO
6 serial input, 12-bit DAC is configured as a voltage output device
100Ω 2 5
RTD –
100Ω 1 1/2 4 4.5V = 450°C with the 1.235 V reference feeding the current output pin (IOUT)
0.5% OP295/ 0V = 0°C
– + OP495 of the DAC. The VREF, which is normally the input, now becomes
2 3
1.235
the output.
5V
2.55MΩ 6.19kΩ 37.4kΩ The output voltage from the DAC is the binary weighted voltage
00331-023

1% 1% AD589
of the reference, which is gained up by the output amplifier such
Figure 25. Low Power RTD Amplifier that the DAC has a 1 mV per bit transfer function.

Rev. G | Page 11 of 16
OP295/OP495
5V 5V IL < 50mA
8
5V MJE 350
R1 VO
17.8kΩ VDD RFB 2 +
44.2kΩ +
D VIN 100µF
1 8 VO = (4.096V) 1%
3 VREF 3 + 4096 5V TO 3.2V
1.23V IOUT DAC8043 8
+ 3
1
1 30.9kΩ
GND CLK SRI LD 2 – 4 OP295/ 1%
AD589 4 7 6 5 OP495 4 – 2
1/2
OP295/
1000pF
R2 R4 OP495
41.2kΩ 100kΩ 1.235V
DIGITAL
CONTROL R3

00331-027
5kΩ 43kΩ
AD589

00331-025
TOTAL POWER DISSIPATION = 1.6mW
Figure 29. 3 V Low Dropout Voltage Regulator
Figure 27. A 5 V 12-Bit DAC with 0 V to 4.095 V Output Swing
Figure 30 shows the regulator’s recovery characteristic when its
4 mA TO 20 mA CURRENT-LOOP TRANSMITTER output underwent a 20 mA to 50 mA step current change.
Figure 28 shows a self-powered 4 mA to 20 mA current-loop
transmitter. The entire circuit floats up from the single-supply 2V
(12 V to 36 V) return. The supply current carries the signal 100
50mA
90
within the 4 mA to 20 mA range. Thus, the 4 mA establishes the
STEP
baseline current budget within which the circuit must operate. CURRENT
CONTROL
This circuit consumes only 1.4 mA maximum quiescent WAVEFORM

current, making 2.6 mA of current available to power additional 20mA

signal conditioning circuitry or to power a bridge circuit.

NULL ADJ REF02
6 2 OUTPUT
10
100kΩ + GND
SPAN ADJ 10-TURN 4 0%
5V

00331-028
1.21MΩ
20mV 1ms
10kΩ 100Ω
10-TURN 1% –
VIN 8
0V + 3V
3 + 220Ω 12V
182kΩ TO Figure 30. Output Step Load Current Recovery
1% 1
36V
2 – 4 1/2 2N1711
OP295/
LOW DROPOUT, 500 mA VOLTAGE REGULATOR
4mA
OP495 TO WITH FOLDBACK CURRENT LIMITING
20mA
RL
220pF
100Ω
Adding a second amplifier in the regulation loop, as shown in
Figure 31, provides an output current monitor as well as
00331-026

HP 100kΩ 100Ω
5082-2800 1% 1%
foldback current limiting protection.
Figure 28. 4 mA to 20 mA Current Loop Transmitter I (NORM) = 0.5A
RSENSE O
0.1Ω IO (MAX) = 1A
IRF9531
3 V LOW DROPOUT LINEAR VOLTAGE REGULATOR S D 1/4W
5V VO
Figure 29 shows a simple 3 V voltage regulator design. The +
210kΩ 205kΩ
6V G
regulator can deliver 50 mA load current while allowing a – 1% 1%

0.2 V dropout voltage. The OP295/OP495 rail-to-rail output 1N4148 8 + 5

7 A2
swing drives the MJE350 pass transistor without requiring
1/2 – 6
special drive circuitry. At no load, its output can swing less than OP295/ 45.3kΩ 45.3kΩ
1% 1%
the pass transistor’s base-emitter voltage, turning the device OP495
100kΩ
nearly off. At full load, and at low emitter-collector voltages, the 5% 0.01µF
+ 3
transistor beta tends to decrease. The additional base current is 1 A1 124kΩ 124kΩ
1% 1%
easily handled by the OP295/OP495 output. 1/2 4 – 2
OP295/
The amplifier servos the output to a constant voltage, which OP495
feeds a portion of the signal to the error amplifier. REF43 2.5V
00331-029

2 6
4
Higher output current, to 100 mA, is achievable at a higher
dropout voltage of 3.8 V. Figure 31. Low Dropout, 500 mA Voltage Regulator
with Foldback Current Limiting

Rev. G | Page 12 of 16
 OP295/OP495
V+
Amplifier A1 provides error amplification for the normal
voltage regulation loop. As long as the output current is less 100kΩ
58.7kΩ
than 1 A, the output of Amplifier A2 swings to ground, reverse-
biasing the diode and effectively taking itself out of the circuit.
However, as the output current exceeds 1 A, the voltage that 3 + 8

1 FREQ OUT
develops across the 0.1 Ω sense resistor forces the output of
Amplifier A2 to go high, forward-biasing the diode, which in 2 – 4 1/2 1
100kΩ OP295/ FOSC = < 350Hz @ V+ = 5V
RC
turn closes the current-limit loop. At this point, the A2’s lower OP495
output resistance dominates the drive to the power MOSFET

00331-030
+ R
transistor, thereby effectively removing the A1 voltage regula- C

tion loop from the circuit. Figure 32. Square Wave Oscillator Has Stable Frequency Regardless of
If the output current greater than 1 A persists, the current limit Supply Changes
loop forces a reduction of current to the load, which causes a 90.9kΩ

corresponding drop in output voltage. As the output voltage 10kΩ V+

–
drops, the current-limit threshold also drops fractionally, 2.2µF
resulting in a decreasing output current as the output voltage VIN
+ +
+ 1/4
OP295/
decreases, to the limit of less than 0.2 A at 1 V output. This fold- 10kΩ 100kΩ OP495 SPEAKER
back effect reduces the power dissipation considerably during a
short circuit condition, thus making the power supply far more –
–
forgiving in terms of the thermal design requirements. Small
+ 1/4
heat sinking on the power MOSFET can be tolerated. + 1/4 OP295/
20kΩ 20kΩ OP295/ OP495
The rail-to-rail swing of the OP295 exacts higher gate drive to

00331-031
V+ OP495
the power MOSFET, providing a fuller enhancement to the tran-
sistor. The regulator exhibits 0.2 V dropout at 500 mA of load Figure 33. Single-Supply Differential Speaker Driver
current. At 1 A output, the dropout voltage is typically 5.6 V. HIGH ACCURACY, SINGLE-SUPPLY, LOW POWER
SQUARE WAVE OSCILLATOR COMPARATOR
The circuit in Figure 32 is a square wave oscillator (note the The OP295/OP495 make accurate open-loop comparators.
positive feedback). The rail-to-rail swing of the OP295/OP495 With a single 5 V supply, the offset error is less than 300 μV.
helps maintain a constant oscillation frequency even if the supply Figure 34 shows the response time of the OP295/OP495 when
voltage varies considerably. Consider a battery-powered system operating open-loop with 4 mV overdrive. They exhibit a 4 ms
where the voltages are not regulated and drop over time. The response time at the rising edge and a 1.5 ms response time at
rail-to-rail swing ensures that the noninverting input sees the the falling edge.
full V+/2, rather than only a fraction of it.
The constant frequency comes from the fact that the 58.7 kΩ 1V
100
feedback sets up Schmitt trigger threshold levels that are directly 90
INPUT
proportional to the supply voltage, as are the RC charge voltage
levels. As a result, the RC charge time, and therefore, the frequency,
remain constant, independent of supply voltage. The slew rate (5mV OVERDRIVE
@ OP295 INPUT)
of the amplifier limits oscillation frequency to a maximum of about
800 Hz at a 5 V supply.
OUTPUT
SINGLE-SUPPLY DIFFERENTIAL SPEAKER DRIVER 10

0%
Connected as a differential speaker driver, the OP295/OP495
00331-032

2V 5ms
can deliver a minimum of 10 mA to the load. With a 600 Ω load,
the OP295/OP495 can swing close to 5 V p-p across the load. Figure 34. Open-Loop Comparator Response Time with 5 mV Overdrive

Rev. G | Page 13 of 16
OP295/OP495

OUTLINE DIMENSIONS
0.400 (10.16)
0.365 (9.27)
0.355 (9.02)

8 5 0.280 (7.11)
0.250 (6.35)
1 0.240 (6.10)
4
0.325 (8.26)
0.310 (7.87)
0.100 (2.54) 0.300 (7.62)
BSC 0.060 (1.52) 0.195 (4.95)
0.210 (5.33) MAX 0.130 (3.30)
MAX 0.115 (2.92)
0.015
0.150 (3.81) (0.38) 0.015 (0.38)
0.130 (3.30) MIN GAUGE
0.115 (2.92) PLANE 0.014 (0.36)
SEATING
PLANE 0.010 (0.25)
0.022 (0.56) 0.008 (0.20)
0.005 (0.13) 0.430 (10.92)
0.018 (0.46) MIN MAX
0.014 (0.36)

0.070 (1.78)
0.060 (1.52)
0.045 (1.14)

COMPLIANT TO JEDEC STANDARDS MS-001

CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR

070606-A
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
CORNER LEADS MAY BE CONFIGURED AS WHOLE OR HALF LEADS.

Figure 35. 8-Lead Plastic Dual In-Line Package [PDIP]

(N-8) P Suffix
Dimensions shown in inches and (millimeters)

5.00 (0.1968)
4.80 (0.1890)

8 5
4.00 (0.1574) 6.20 (0.2441)
3.80 (0.1497) 1 5.80 (0.2284)
4

1.27 (0.0500) 0.50 (0.0196)

BSC 45°
1.75 (0.0688) 0.25 (0.0099)
0.25 (0.0098) 1.35 (0.0532)
8°
0.10 (0.0040) 0°
COPLANARITY 0.51 (0.0201)
0.10 1.27 (0.0500)
0.31 (0.0122) 0.25 (0.0098)
SEATING 0.40 (0.0157)
PLANE 0.17 (0.0067)

COMPLIANT TO JEDEC STANDARDS MS-012-A A

CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
012407-A

(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR

REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.

Figure 36. 8-Lead Standard Small Outline Package [SOIC_N]

Narrow Body (R-8) S Suffix
Dimensions shown in millimeters and (inches)

Rev. G | Page 14 of 16
 OP295/OP495
0.775 (19.69)
0.750 (19.05)
0.735 (18.67)

14 8 0.280 (7.11)
0.250 (6.35)
1 0.240 (6.10)
7
0.325 (8.26)
0.310 (7.87)
0.100 (2.54) 0.300 (7.62)
BSC
0.060 (1.52) 0.195 (4.95)
0.210 (5.33) MAX 0.130 (3.30)
MAX 0.115 (2.92)
0.015
0.150 (3.81) (0.38) 0.015 (0.38)
0.130 (3.30) MIN GAUGE
0.110 (2.79) PLANE 0.014 (0.36)
SEATING
PLANE 0.010 (0.25)
0.022 (0.56) 0.008 (0.20)
0.005 (0.13) 0.430 (10.92)
0.018 (0.46) MIN MAX
0.014 (0.36)
0.070 (1.78)
0.050 (1.27)
0.045 (1.14)

COMPLIANT TO JEDEC STANDARDS MS-001

CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR

070606-A
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
CORNER LEADS MAY BE CONFIGURED AS WHOLE OR HALF LEADS.

Figure 37. 14-Lead Plastic Dual In-Line Package [PDIP]

(N-14) P Suffix
Dimensions shown in inches and (millimeters)

10.50 (0.4134)
10.10 (0.3976)

16 9
7.60 (0.2992)
7.40 (0.2913)

1 10.65 (0.4193)
8
10.00 (0.3937)

1.27 (0.0500) 0.75 (0.0295)

BSC 45°
2.65 (0.1043) 0.25 (0.0098)
0.30 (0.0118) 2.35 (0.0925)
8°
0.10 (0.0039) 0°
COPLANARITY
0.10 0.51 (0.0201) SEATING 1.27 (0.0500)
PLANE 0.33 (0.0130)
0.31 (0.0122) 0.20 (0.0079) 0.40 (0.0157)

COMPLIANT TO JEDEC STANDARDS MS-013- AA

CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
032707-B

(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR

REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.

Figure 38. 16-Lead Standard Small Outline Package [SOIC_W]

Wide Body (RW-16) S Suffix
Dimensions shown in millimeters and (inches)

Rev. G | Page 15 of 16
OP295/OP495
ORDERING GUIDE
Model Temperature Range Package Description Package Option
OP295GP −40°C to +125°C 8-Lead PDIP P-Suffix (N-8)
OP295GPZ 1 −40°C to +125°C 8-Lead PDIP P-Suffix (N-8)
OP295GS −40°C to +125°C 8-Lead SOIC_N S-Suffix (R-8)
OP295GS-REEL −40°C to +125°C 8-Lead SOIC_N S-Suffix (R-8)
OP295GS-REEL7 −40°C to +125°C 8-Lead SOIC_N S-Suffix (R-8)
OP295GSZ1 −40°C to +125°C 8-Lead SOIC_N S-Suffix (R-8)
OP295GSZ-REEL1 −40°C to +125°C 8-Lead SOIC_N S-Suffix (R-8)
OP295GSZ-REEL71 −40°C to +125°C 8-Lead SOIC_N S-Suffix (R-8)
OP495GP −40°C to +125°C 14-Lead PDIP P-Suffix (N-14)
OP495GPZ1 −40°C to +125°C 14-Lead PDIP P-Suffix (N-14)
OP495GS −40°C to +125°C 16-Lead SOIC_W S-Suffix (RW-16)
OP495GS-REEL −40°C to +125°C 16-Lead SOIC_W S-Suffix (RW-16)
OP495GSZ1 −40°C to +125°C 16-Lead SOIC_W S-Suffix (RW-16)
OP495GSZ-REEL1 −40°C to +125°C 16-Lead SOIC_W S-Suffix (RW-16)
1
Z = RoHS Compliant Part.

©2009 Analog Devices, Inc. All rights reserved. Trademarks and

registered trademarks are the property of their respective owners.
D00331-0-8/09(G)

Rev. G | Page 16 of 16