PD - 91480B

IRF7313
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance S1
1 8
D1
l Dual N-Channel MOSFET 2 7
VDSS = 30V
G1 D1
l Surface Mount 3 6
l Fully Avalanche Rated S2 D2

RDS(on) = 0.029Ω
4 5
G2 D2

Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of SO-8
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.

Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)

Symbol Maximum Units
Drain-Source Voltage VDS 30
V
Gate-Source Voltage V GS ± 20
TA = 25°C 6.5
Continuous Drain Current… ID
TA = 70°C 5.2
A
Pulsed Drain Current IDM 30
Continuous Source Current (Diode Conduction) IS 2.5
TA = 25°C 2.0
Maximum Power Dissipation … PD W
TA = 70°C 1.3
Single Pulse Avalanche Energy ‚ EAS 82 mJ
Avalanche Current IAR 4.0 A
Repetitive Avalanche Energy EAR 0.20 mJ
Peak Diode Recovery dv/dt ƒ dv/dt 5.8 V/ ns
Junction and Storage Temperature Range TJ, TSTG -55 to + 150 °C

Thermal Resistance Ratings

Parameter Symbol Limit Units
Maximum Junction-to-Ambient… RθJA 62.5 °C/W

9/12/02

This datasheet has been downloaded from http://www.digchip.com at this page

IRF7313
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V V GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.023 0.029 V GS = 10V, ID = 5.8A „
RDS(on) Static Drain-to-Source On-Resistance Ω
––– 0.032 0.046 V GS = 4.5V, ID = 4.7A „
VGS(th) Gate Threshold Voltage 1.0 ––– ––– V V DS = V GS, ID = 250µA
gfs Forward Transconductance ––– 14 ––– S V DS = 15V, ID = 5.8A
––– ––– 1.0 V DS = 24V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 25 V DS = 24V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage ––– ––– 100 V GS = 20V
I GSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 V GS = -20V
Qg Total Gate Charge ––– 22 33 I D = 5.8A
Qgs Gate-to-Source Charge ––– 2.6 3.9 nC V DS = 15V
Qgd Gate-to-Drain ("Miller") Charge ––– 6.4 9.6 V GS = 10V, See Fig. 10 „
td(on) Turn-On Delay Time ––– 8.1 12 V DD = 15V
tr Rise Time ––– 8.9 13 I D = 1.0A
ns
td(off) Turn-Off Delay Time ––– 26 39 R G = 6.0Ω
tf Fall Time ––– 17 26 R D = 15Ω „
Ciss Input Capacitance ––– 650 ––– V GS = 0V
Coss Output Capacitance ––– 320 ––– pF V DS = 25V
Crss Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz, See Fig. 9

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– 2.5

(Body Diode) showing the
A
I SM Pulsed Source Current integral reverse G

––– ––– 30
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– 0.78 1.0 V TJ = 25°C, IS = 1.7A, VGS = 0V ƒ
trr Reverse Recovery Time ––– 45 68 ns TJ = 25°C, IF = 1.7A
Qrr Reverse RecoveryCharge ––– 58 87 nC di/dt = 100A/µs ƒ

Notes:
 Repetitive rating; pulse width limited by ƒ ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS,
max. junction temperature. ( See fig. 11 ) TJ ≤ 150°C
‚ Starting TJ = 25°C, L = 10mH „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 4.0A.
… Surface mounted on FR-4 board, t ≤ 10sec.
 IRF7313

100 100
VGS VGS
TOP 15V TOP 15V
10V 10V
7.0V 7.0V
5.5V 5.5V
I D , Drain-to-Source Current (A)

I D, Drain-to-Source Current (A)

4.5V 4.5V
4.0V 4.0V
3.5V 3.5V
BOTTOM 3.0V BOTTOM 3.0V

10 10
3.0V
3.0V

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25°C A TJ = 150°C
1 1 A
0.1 1 10 0.1 1 10
V DS , Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

VDS

100 100
ISD , Reverse Drain Current (A)
I D , Drain-to-Source Current (A)

TJ = 25°C
TJ = 150°C
TJ = 150°C
10 10
TJ = 25°C

VDS = 10V
20µs PULSE WIDTH VGS = 0V
1 A 1 A
3.0 3.5 4.0 4.5 5.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VGS , Gate-to-Source Voltage (V) V SD , Source-to-Drain Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode

Forward Voltage
IRF7313

2.0 0.040

RDS (on) , Drain-to-Source On Resistance (Ω)

ID = 5.8A
RDS(on) , Drain-to-Source On Resistance

V GS = 4.5V
0.036
1.5
(Normalized)

0.032

1.0

0.028

0.5
0.024 V GS = 10V

VGS = 10V
0.0 0.020
-60 -40 -20 0 20 40 60 80 100 120 140 160 A
0 10 20 30 40
TJ , Junction Temperature ( °C)
I D , Drain Current (A)

Fig 5. Normalized On-Resistance Fig 6. Typical On-Resistance Vs. Drain

Vs. Temperature Current

0.12 200
IIDD
E AS , Single Pulse Avalanche Energy (mJ)
RDS (on) , Drain-to-Source On Resistance (Ω)

TOP 1.8A
3.2A
0.10 BOTTOM 4.0A
160

0.08
120

0.06

I D = 5.8A 80
0.04

40
0.02

0.00 A 0 A
0 3 6 9 12 15 25 50 75 100 125 150

V GS , Gate-to-Source Voltage (V) Starting T J , Junction Temperature (°C)

Fig 7. Typical On-Resistance Vs. Gate Fig 8. Maximum Avalanche Energy

Voltage Vs. Drain Current
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1200 20
V GS = 0V, f = 1MHz ID = 5.8A
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd VDS = 15V

VGS , Gate-to-Source Voltage (V)

C oss = C ds + C gd
16
900
Ciss
C, Capacitance (pF)

12
Coss
600

300 Crss
4

0 A 0
1 10 100 0 10 20 30 40
VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 9. Typical Capacitance Vs. Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage Gate-to-Source Voltage

100

0.50
Thermal Response (Z thJA )

0.20
10
0.10

0.05

0.02 PDM
1
0.01 t1
t2

Notes:
SINGLE PULSE
(THERMAL RESPONSE) 1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRF7313
Package Outline
SO8 Outline

INCHES MILLIMETERS
D DIM
5 MIN MAX MIN MAX
-B-
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
8 7 6 5
5 B .014 .018 0.36 0.46
E H
-A- 0.25 (.010) M A M C .0075 .0098 0.19 0.25
1 2 3 4
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e e .050 BASIC 1.27 BASIC
K x 45°
6X
e1 e1 .025 BASIC 0.635 BASIC
θ
A
H .2284 .2440 5.80 6.20

-C-
K .011 .019 0.28 0.48
0.10 (.004) L 6 C
B 8X
A1 8X 8X L 0.16 .050 0.41 1.27
0.25 (.010) M C A S B S θ 0° 8° 0° 8°
RECOMMENDED FOOTPRINT
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 0.72 (.028 )
8X
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
6.46 ( .255 ) 1.78 (.070)
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
8X
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X

Part Marking Information

SO8

EXAMPLE : THIS IS AN IRF7101

DATE CODE (YWW)

Y = LAST DIGIT OF THE YEAR
WW = WEEK
312
INTERNATIONAL XXXX
F7101
RECTIFIER WAFER
LOGO LOT CODE
PART NUMBER
TOP (LAST 4 DIGITS) BOTTOM
 IRF7313
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

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http://www.irf.com/ Data and specifications subject to change without notice. 9/02