Freescale Semiconductor Document Number: AFT09MS007N

Technical Data Rev. 1, 4/2014

RF Power LDMOS Transistor

High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFET
AFT09MS007NT1
Designed for handheld two--way radio applications with frequencies from
136 to 941 MHz. The high gain, ruggedness and wideband performance of this
device makes it ideal for large--signal, common--source amplifier applications
in handheld radio equipment. 136–941 MHz, 7 W, 7.5 V
Narrowband Performance (7.5 Vdc, IDQ = 100 mA, TA = 25C, CW) WIDEBAND
RF POWER LDMOS TRANSISTOR
Frequency Gps D Pout
(MHz) (dB) (%) (W)

870 (1) 15.2 71.0 7.3

Wideband Performance (7.5 Vdc, TA = 25C, CW)

Frequency Pin Gps D Pout
(MHz) (W) (dB) (%) (W)

136–174 0.25 14.6 69.0 7.2

PLD--1.5W
350–470 (2,5) 0.20 15.6 60.9 7.3
450–520 (3,5) 0.22 15.4 56.0 7.5
760–860 (4,5) 0.23 15.1 48.1 7.5

Load Mismatch/Ruggedness
Frequency Signal Pin Test Gate Drain
(MHz) Type VSWR (W) Voltage Result
870 (1) CW > 65:1 at all 0.4 10.8 No Device
Phase Angles (3 dB Overdrive) Degradation
1. Measured in 870 MHz narrowband test circuit.
Note: The center pad on the backside of
2. Measured in 350–470 MHz UHF broadband reference circuit.
the package is the source terminal
3. Measured in 450–520 MHz UHF broadband reference circuit.
for the transistor.
4. Measured in 760–860 MHz UHF broadband reference circuit.
5. The values shown are the minimum measured performance numbers across the Figure 1. Pin Connections
indicated frequency range.
Features
 Characterized for Operation from 136 to 941 MHz
 Unmatched Input and Output Allowing Wide Frequency Range Utilization
 Integrated ESD Protection
 Integrated Stability Enhancements
 Wideband — Full Power Across the Band
 Exceptional Thermal Performance
 Extreme Ruggedness
 High Linearity for: TETRA, SSB
 In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel.
Typical Applications
 Output Stage VHF Band Handheld Radio
 Output Stage UHF Band Handheld Radio
 Output Stage for 700–800 MHz Handheld Radio

 Freescale Semiconductor, Inc., 2013–2014. All rights reserved. AFT09MS007NT1

RF Device Data
Freescale Semiconductor, Inc. 1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS –0.5, +30 Vdc
Gate--Source Voltage VGS –6.0, +12 Vdc
Operating Voltage VDD 12.5, +0 Vdc
Storage Temperature Range Tstg –65 to +150 C
Case Operating Temperature Range TC –40 to +150 C
Operating Junction Temperature (1,2) TJ –40 to +150 C
Total Device Dissipation @ TC = 25C PD 114 W
Derate above 25C 0.91 W/C

Table 2. Thermal Characteristics

Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case RJC 1.1 C/W
Case Temperature 74C, 7 W CW, 7.5 Vdc, IDQ = 100 mA, 870 MHz

Table 3. ESD Protection Characteristics

Test Methodology Class
Human Body Model (per JESD22--A114) 2, passes 2500 V
Machine Model (per EIA/JESD22--A115) B, passes 200 V
Charge Device Model (per JESD22--C101) IV, passes 2000 V

Table 4. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 C

Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Off Characteristics
Zero Gate Voltage Drain Leakage Current IDSS — — 10 Adc
(VDS = 30 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current IDSS — — 2 Adc
(VDS = 7.5 Vdc, VGS = 0 Vdc)
Gate--Source Leakage Current IGSS — — 1 nAdc
(VGS = 5 Vdc, VDS = 0 Vdc)
On Characteristics
Gate Threshold Voltage VGS(th) 1.6 2.1 2.6 Vdc
(VDS = 10 Vdc, ID = 110 Adc)
Drain--Source On--Voltage VDS(on) — 0.12 — Vdc
(VGS = 10 Vdc, ID = 1.1 Adc)
Forward Transconductance gfs — 9.8 — S
(VDS = 7.5 Vdc, ID = 3 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance Crss — 2.7 — pF
(VDS = 7.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance Coss — 56 — pF
(VDS = 7.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Input Capacitance Ciss — 107 — pF
(VDS = 7.5 Vdc, VGS = 0 Vdc  30 mV(rms)ac @ 1 MHz)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
AFT09MS007NT1
RF Device Data
2 Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 7.5 Vdc, IDQ = 100 mA, Pin = 0.22 W, f = 870 MHz
Common--Source Amplifier Output Power Pout — 7.3 — W
Drain Efficiency D — 71.0 — %

Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 100 mA
Frequency Signal Pin
(MHz) Type VSWR (W) Test Voltage, VDD Result
870 CW > 65:1 at all Phase Angles 0.4 10.8 No Device Degradation
(3 dB Overdrive)

AFT09MS007NT1
RF Device Data
Freescale Semiconductor, Inc. 3
 TYPICAL CHARACTERISTICS

200 4
Ciss TA = 25C VGS = 3.75 Vdc
100 3.5

IDS, DRAIN CURRENT (AMPS)

3
Coss
C, CAPACITANCE (pF)

2.5 3.5 Vdc

2
10
1.5 3.25 Vdc

1
Crss
0.5 3 Vdc
Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc 2.5 Vdc
1 0
0 2 4 6 8 10 12 0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS) VDS, DRAIN--SOURCE VOLTAGE (VOLTS)

Figure 2. Capacitance versus Drain--Source Voltage Figure 3. Drain Current versus Drain--Source Voltage

109

VDD = 7.5 Vdc

ID = 1.06 Amps
108
1.33 Amps
MTTF (HOURS)

1.59 Amps
107

106

105
90 100 110 120 130 140 150 160
TJ, JUNCTION TEMPERATURE (C)
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.

Figure 4. MTTF versus Junction Temperature — CW

AFT09MS007NT1
RF Device Data
4 Freescale Semiconductor, Inc.
 870 MHz NARROWBAND PRODUCTION TEST FIXTURE

C2 C3 B1 C10 C11 C12

C1 C13

C4*

C15*
L1 C6 C8 L2

C5 L3 C16

C7 C9
C14*

AFT09MS007N
D49708 Rev. 2

*C4, C14 and C15 are mounted vertically.

Figure 5. AFT09MS007NT1 Narrowband Test Circuit Component Layout — 870 MHz

Table 6. AFT09MS007NT1 Narrowband Test Circuit Component Designations and Values — 870 MHz
Part Description Part Number Manufacturer
B1 RF Bead, Short 2743019447 Fair-Rite
C1 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet
C2, C12 0.1 F Chip Capacitors CDR33BX104AKWS Kemet
C3, C11 0.01 F Chip Capacitors C0805C103K5RAC Kemet
C4, C10, C16 56 pF Chip Capacitors ATC100B560CT500XT ATC
C5 3.9 pF Chip Capacitor ATC100B3R9CT500XT ATC
C6, C7 7.5 pF Chip Capacitors ATC100B7R5CT500XT ATC
C8, C9 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC
C13 330 F, 35 V Electrolytic Capacitor MCGPR35V337M10X16-RH Multicomp
C14, C15 3.6 pF Chip Capacitors ATC100B3R6CT500XT ATC
L1 8.0 nH Inductor A03TKLC Coilcraft
L2 18.5 nH Inductor A05TKLC Coilcraft
L3 5.0 nH Inductor A02TKLC Coilcraft
PCB Rogers RO4350B, 0.030, r = 3.66 D49708 MTL

AFT09MS007NT1
RF Device Data
Freescale Semiconductor, Inc. 5
 + VSUPPLY
VBIAS
+
C10 C11 C12 C13
C1 C2 C3 B1

L2
C4
C8 C15
L1 RF
C6
RF Z8 Z9 Z10 Z11 Z12 Z13 L3 Z14 Z15 OUTPUT
INPUT Z1 Z2 Z3 Z4 Z5 Z6 Z7
C16
C9 C14
C5
C7

Figure 6. AFT09MS007NT1 Narrowband Test Circuit Schematic — 870 MHz

Table 7. AFT09MS007NT1 Narrowband Test Circuit Microstrips — 870 MHz

Microstrip Description Microstrip Description
Z1 0.328  0.080 Microstrip Z9 0.295  0.620 Microstrip
Z2 0.490  0.120 Microstrip Z10 0.046  0.620 Microstrip
Z3 0.610  0.320 Microstrip Z11 0.159  0.620  0.320 Taper
Z4 0.160  0.320  0.620 Taper Z12 0.379  0.320 Microstrip
Z5 0.058  0.620 Microstrip Z13 0.055  0.320 Microstrip
Z6 0.288  0.620 Microstrip Z14 0.665  0.120 Microstrip
Z7 0.394  0.620 Microstrip Z15 0.238  0.080 Microstrip
Z8 0.398  0.620 Microstrip

AFT09MS007NT1
RF Device Data
6 Freescale Semiconductor, Inc.
 TYPICAL CHARACTERISTICS — 870 MHz
12
VDD = 7.5 Vdc, f = 870 MHz
10

Pout, OUTPUT POWER (WATTS)

8
Pin = 0.22 W

6
Pin = 0.11 W

0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 7. Output Power versus Gate--Source Voltage
at a Constant Input Power

18 90
16 80
Pout, OUTPUT POWER (WATTS)

14 Gps 70

D, DRAIN EFFICIENCY (%)

Gps, POWER GAIN (dB)

12 60

10 50
8 40
6 30
D
4 20
2 VDD = 7.5 Vdc, IDQ = 100 mA 10
Pout f = 870 MHz
0 0
0.01 0.1 0.7
Pin, INPUT POWER (WATTS)
Figure 8. Power Gain, Output Power and Drain
Efficiency versus Input Power

VDD = 7.5 Vdc, IDQ = 100 mA, Pout = 7 W

f Zsource Zload
MHz  
870 0.54 + j1.35 1.31 + j1.93
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.

Input Device Output

Matching Under Matching
Network Test Network
50  50 

Zsource Zload

Figure 9. Narrowband Series Equivalent Source and Load Impedance — 870 MHz

AFT09MS007NT1
RF Device Data
Freescale Semiconductor, Inc. 7
 350–470 MHz UHF BROADBAND REFERENCE CIRCUIT

Table 8. 350–470 MHz UHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system)
VDD = 7.5 Vdc, IDQ = 200 mA, TA = 25C, CW
Frequency Pin Gps D Pout
(MHz) (W) (dB) (%) (W)
350 0.15 16.6 60.9 7.3
410 0.15 16.6 66.5 7.3
470 0.20 15.6 70.1 7.3

Table 9. Load Mismatch/Ruggedness (In Freescale Reference Circuit)

Frequency Signal Pin
(MHz) Type VSWR (W) Test Voltage, VDD Result

470 CW > 65:1 at all 0.4 10.8 No Device

Phase Angles (3 dB Overdrive) Degradation

AFT09MS007NT1
RF Device Data
8 Freescale Semiconductor, Inc.
 350–470 MHz UHF BROADBAND REFERENCE CIRCUIT

C1 J1 C15 C14

C9 C19
C2
L3 C13 C18
L1 C12
C3 C10 L7
C4 C11
C5 L4
L2 R1
C17
L5
L6
C16
C8 Q1

Rev. 1
C6 C7
D58008

Figure 10. AFT09MS007NT1 UHF Broadband Reference Circuit Component Layout — 350–470 MHz

Table 10. AFT09MS007NT1 UHF Broadband Reference Circuit Component Designations and Values — 350–470 MHz
Part Description Part Number Manufacturer
C1, C10, C19 100 pF Chip Capacitors ATC600F101JT250XT ATC
C2 10 pF Chip Capacitor ATC600F100JT250XT ATC
C3 3.0 pF Chip Capacitor ATC600F3R0BT250XT ATC
C4, C8 27 pF Chip Capacitors ATC600F270JT250XT ATC
C5 5.1 pF Chip Capacitor ATC600F5R1BT250XT ATC
C6, C7 30 pF Chip Capacitors ATC600F300JT250XT ATC
C9 10 nF Chip Capacitor C1210C103J5GAC-TU Kemet
C11 82 pF Chip Capacitor ATC600F820JT250XT ATC
C12 240 pF Chip Capacitor ATC600F241JT250XT ATC
C13 2.2 F Chip Capacitor C3225X7R1H225K250AB TDK
C14 0.1 F Chip Capacitor GRM21BR71H104KA01B Murata
C15 0.01 F Chip Capacitor GRM21BR72A103KA01B Murata
C16 47 pF Chip Capacitor ATC600F470JT250XT ATC
C17 18 pF Chip Capacitor ATC600F180BT250XT ATC
C18 7.5 pF Chip Capacitor ATC100A7R5JT150XT ATC
J1 3--pin Header 22-28-8360 Molex
L1 8.1 nH Inductor 0908SQ8N1 Coilcraft
L2 2.55 nH, 3 Turn Inductor 0906-3JLC Coilcraft
L3, L4, L5 21.5 nH Inductors 0908SQ22N Coilcraft
L6 3.85 nH, 4 Turn Inductor 0906-4JLC Coilcraft
L7 8.9 nH Inductor 0806SQ8N9 Coilcraft
Q1 RF Power LDMOS Transistor AFT09MS007NT1 Freescale
R1 62 , 1/10 W Chip Resistor RG2012N-620-B-T1 Susumu
PCB Shengyi S1000-2, 0.020, r = 4.8 D58008 MTL

AFT09MS007NT1
RF Device Data
Freescale Semiconductor, Inc. 9
10
AFT09MS007NT1
VSUPPLY

C12 C13 C14 C15

L4
L3
VBIAS

C9 C10 C11 L5 RF
R1
OUTPUT
RF Z16 Z17 Z18 Z19 Z20 L6 Z21 Z22 L7 Z23 Z24 Z25
INPUT Z12 Z13 Z14 Z15
Z1 Z2 Z3 L1 Z4 Z5 Z6 Z7 L2 Z8 Z9 Z10 Z11
C19
C16 C17 C18
C1
C2 C3 C4 C5 C6 C7 C8

Figure 11. AFT09MS007NT1 UHF Broadband Reference Circuit Schematic — 350–470 MHz

Table 11. AFT09MS007NT1 UHF Broadband Reference Circuit Microstrips — 350–470 MHz
Microstrip Description Microstrip Description Microstrip Description
Z1 0.060  0.034 Microstrip Z10 0.037  0.046 Microstrip Z18 0.088  0.170 Microstrip
Z2 0.026  0.046 Microstrip Z11 0.055  0.046 Microstrip Z19 0.205  0.046 Microstrip
Z3 0.026  0.046 Microstrip Z12 0.235  0.046 Microstrip Z20 0.148  0.046 Microstrip
Z4 0.060  0.046 Microstrip Z13 0.121  0.300 Microstrip Z21 0.032  0.046 Microstrip
Z5 0.054  0.046 Microstrip Z14 0.031  0.300 Microstrip Z22 0.195  0.046 Microstrip
Z6 0.054  0.046 Microstrip Z15 0.070  0.146 Microstrip Z23 0.089  0.046 Microstrip
Z7 0.060  0.046 Microstrip Z16 0.070  0.146 Microstrip Z24 0.046  0.046 Microstrip
Z8 0.084  0.046 Microstrip Z17 0.160  0.170 Microstrip Z25 0.060  0.034 Microstrip
Z9 0.044  0.046 Microstrip

Freescale Semiconductor, Inc.

RF Device Data
 TYPICAL CHARACTERISTICS — 350–470 MHz UHF BROADBAND
REFERENCE CIRCUIT

20 90

EFFICIENCY (%)
VDD = 7.5 Vdc

D, DRAIN
19 Pin = 0.20 W 80
IDQ = 200 mA D
18 70

Gps, POWER GAIN (dB)

17 60

16 50
Gps

POWER (WATTS)
15 8

Pout, OUTPUT
14 7
Pout
13 6

12 5
320 340 360 380 400 420 440 460 480 500
f, FREQUENCY (MHz)
Figure 12. Power Gain, Drain Efficiency and Output Power versus
Frequency at a Constant Input Power

14
f = 410 MHz 0.8
12 VDD = 7.5 Vdc, Pin = 0.1 W f = 410 MHz

Pout, OUTPUT POWER (WATTS)

Pout, OUTPUT POWER (WATTS)

10 0.6
VDD = 7.5 Vdc, Pin = 0.25 W VDD = 7.5 Vdc
8 Pin = 0.25 W
0.4
VDD = 7.5 Vdc
6
Pin = 0.1 W
0.2
4

2
0
Detail A 0 0.4 0.8 1.2 1.6 2
0
0 1 2 3 4 5 VGS, GATE--SOURCE VOLTAGE (VOLTS)
VGS, GATE--SOURCE VOLTAGE (VOLTS) Detail A
Figure 13. Output Power versus Gate--Source Voltage

20 80
350 MHz f = 470 MHz D
EFFICIENCY (%)

19 60
D, DRAIN

350 MHz
410 MHz
18 40
Gps, POWER GAIN (dB)

410 MHz
17 20
470 MHz 350 MHz
16 VDD = 7.5 Vdc 10
IDQ = 200 mA
15 Pout 7.5
POWER (WATTS)
Pout, OUTPUT

410 MHz
14 5
470 MHz
13 Gps 2.5

12 0
0.01 0.1 1
Pin, INPUT POWER (WATTS)
Figure 14. Power Gain, Drain Efficiency and Output
Power versus Input Power and Frequency

AFT09MS007NT1
RF Device Data
Freescale Semiconductor, Inc. 11
 350–470 MHz UHF BROADBAND REFERENCE CIRCUIT

f = 470 MHz Zo = 10 

Zsource

f = 350 MHz
f = 470 MHz

f = 350 MHz Zload

VDD = 7.5 Vdc, IDQ = 200 mA, Pout = 7.5 W

f Zsource Zload
MHz  
350 2.7 + j6.6 3.5 + j4.2
370 3.3 + j6.2 3.7 + j4.2
390 3.1 + j5.4 3.5 + j4.0
410 2.6 + j6.1 3.5 + j5.0
430 2.1 + j7.1 3.6 + j5.9
450 2.2 + j7.3 3.6 + j5.6
470 2.0 + j7.7 3.0 + j5.8
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.

Input Device Output

Matching Under Matching
Network Test Network
50  50 

Zsource Zload

Figure 15. UHF Broadband Series Equivalent Source and Load Impedance — 350–470 MHz

AFT09MS007NT1
RF Device Data
12 Freescale Semiconductor, Inc.
 450–520 MHz UHF BROADBAND REFERENCE CIRCUIT

Table 12. 450–520 MHz UHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system)
VDD = 7.5 Volts, IDQ = 150 mA, TA = 25C, CW
Frequency Pin Gps D Pout
(MHz) (W) (dB) (%) (W)
450 0.21 15.4 57.7 7.5
485 0.21 15.5 56.0 7.5
520 0.18 16.2 66.3 7.5

Table 13. Load Mismatch/Ruggedness (In Freescale Reference Circuit)

Frequency Signal Pin
(MHz) Type VSWR (W) Test Voltage, VDD Result

520 CW > 65:1 at all 0.2 10.8 No Device

Phase Angles (3 dB Overdrive) Degradation

AFT09MS007NT1
RF Device Data
Freescale Semiconductor, Inc. 13
 450–520 MHz UHF BROADBAND REFERENCE CIRCUIT

J1 C7 C8
C1 C6 C16
L1 L3 VGG VDD C9 C15
C10
C5
C2 L7
L4 C17
R1
C14
L2
C4 L5

AFT09MS007N
Q1 C13 L6
C3 C11 C12

Rev. 2
D49947

Figure 16. AFT09MS007NT1 UHF Broadband Reference Circuit Component Layout — 450–520 MHz

Table 14. AFT09MS007NT1 UHF Broadband Reference Circuit Component Designations and Values — 450–520 MHz
Part Description Part Number Manufacturer
C1, C16 100 pF Chip Capacitors ATC600F101JT250XT ATC
C2 7.5 pF Chip Capacitor GQM2195C2E7R5BB12D Murata
C3 5.6 pF Chip Capacitor ATC600F5R6BT250XT ATC
C4 39 pF Chip Capacitor ATC600F390JT250XT ATC
C5, C9 240 pF Chip Capacitors ATC600F241JT250XT ATC
C6, C7 0.1 F Chip Capacitors GRM21BR71H104KA01B Murata
C8 0.01 F Chip Capacitor GRM21BR72A103KA01B Murata
C10 2.2 F Chip Capacitor GRM31CR71H225KA88L Murata
C11, 12 12 pF Chip Capacitors ATC600F120JT250XT ATC
C13 8.2 pF Chip Capacitor ATC600F8R2BT250XT ATC
C14 20 pF Chip Capacitor ATC600F200JT250XT ATC
C15 2 pF Chip Capacitor ATC600F2R0BT250XT ATC
C17 47 pF Chip Capacitor ATC600F470JT250XT ATC
J1 3--pin Header 22-28-8360 Molex
L1 2.55 nH Inductor 0906-3JLC Coilcraft
L2 3.85 nH Inductor 0906-4JLC Coilcraft
L3 22 nH Inductor 0908SQ22N Coilcraft
L4, L5 17 nH Inductors 0908SQ17N Coilcraft
L6 1.65 nH Inductor 0906-2JLC Coilcraft
L7 8.1 nH Inductor 0908SQ8R1N Coilcraft
R1 22 , 1/10 W Chip Resistor RR1220Q-220-D Susumu
Q1 RF Power LDMOS Transistor AFT09MS007N Freescale
PCB Shengyi S1000-2, 0.020, r = 4.8 D49947 MTL

AFT09MS007NT1
RF Device Data
14 Freescale Semiconductor, Inc.
RF Device Data
VSUPPLY

Freescale Semiconductor, Inc.

C10 C9 C8 C7
L4
L3
VBIAS

C6 C5 C17
L5 RF
R1
RF Z12 Z13 Z14 Z15 Z16 Z17 L6 Z18 Z19 L7 Z20 Z21 Z22 OUTPUT
INPUT
Z1 Z2 L1 Z3 Z4 L2 Z5 Z6 Z7 Z8 Z9 Z10 Z11
C16
C11 C12 C13 C14 C15
C1
C2 C3 C4

Figure 17. AFT09MS007NT1 UHF Broadband Reference Circuit Schematic — 450–520 MHz

Table 15. AFT09MS007NT1 UHF Broadband Reference Circuit Microstrips — 450–520 MHz
Microstrip Description Microstrip Description Microstrip Description
Z1 0.060  0.034 Microstrip Z9 0.121  0.300 Microstrip Z16 0.075  0.049 Microstrip
Z2 0.052  0.046 Microstrip Z10 0.031  0.300 Microstrip Z17 0.279  0.049 Microstrip
Z3 0.110  0.046 Microstrip Z11 0.070  0.146 Microstrip Z18 0.032  0.046 Microstrip
Z4 0.118  0.046 Microstrip Z12 0.070  0.146 Microstrip Z19 0.195  0.046 Microstrip
Z5 0.084  0.046 Microstrip Z13 0.138  0.170 Microstrip Z20 0.089  0.046 Microstrip
Z6 0.124  0.046 Microstrip Z14 0.055  0.170 Microstrip Z21 0.046  0.046 Microstrip
Z7 0.084  0.046 Microstrip Z15 0.055  0.170 Microstrip Z22 0.060  0.034 Microstrip
Z8 0.207  0.046 Microstrip

15
AFT09MS007NT1
 TYPICAL CHARACTERISTICS — 450–520 MHz UHF BROADBAND
REFERENCE CIRCUIT

20 90
VDD = 7.5 Vdc
19 Pin = 0.25 W 80

EFFICIENCY (%)
IDQ = 150 mA

D, DRAIN
18 70

Gps, POWER GAIN (dB)

D
17 60

16 50
Gps
15 10

POWER (WATTS)
Pout, OUTPUT
14 9
Pout
13 8

12 7
440 450 460 470 480 490 500 510 520 530
f, FREQUENCY (MHz)
Figure 18. Power Gain, Output Power and Drain Efficiency versus
Frequency at a Constant Input Power — 7.5 V

16
f = 485 MHz 8
14 VDD = 7.5 Vdc, Pin = 0.25 W f = 485 MHz

Pout, OUTPUT POWER (WATTS)

7
Pout, OUTPUT POWER (WATTS)

12 VDD = 7.5 Vdc, Pin = 0.1 W 6

10 5 VDD = 7.5 Vdc
Pin = 0.25 W
8 4
3 VDD = 7.5 Vdc
6 Pin = 0.1 W
Detail A 2
4
1
2 0
0 1 2 3 4
0
0 1 2 3 4 VGS, GATE--SOURCE VOLTAGE (VOLTS)
VGS, GATE--SOURCE VOLTAGE (VOLTS) Detail A
Figure 19. Output Power versus Gate--Source Voltage

19 80
f = 520 MHz D
EFFICIENCY (%)

18 60
D, DRAIN

17 40
Gps, POWER GAIN (dB)

485 MHz 520 MHz VDD = 7.5 Vdc

16 485 MHz IDQ = 150 mA 20
450 MHz
15 12
Pout
POWER (WATTS)

520 MHz
Pout, OUTPUT

14 450 MHz 8

13 485 MHz 4
450 MHz Gps
12 0
0.03 0.1 1
Pin, INPUT POWER (WATTS)
Figure 20. Power Gain, Output Power and Drain
Efficiency versus Input Power and Frequency

AFT09MS007NT1
RF Device Data
16 Freescale Semiconductor, Inc.
 450–520 MHz UHF BROADBAND REFERENCE CIRCUIT

f = 530 MHz

Zo = 10 
Zsource

f = 450 MHz
f = 530 MHz

Zload

f = 450 MHz

VDD = 7.5 Vdc, IDQ = 150 mA, Pout = 7.5 W

f Zsource Zload
MHz  
450 0.45 + j2.46 1.56 + j1.05
460 0.40 + j2.37 1.52 + j1.24
470 0.40 + j2.97 1.46 + j1.51
480 0.38 + j3.56 1.39 + j1.71
490 0.41 + j4.16 1.35 + j2.06
500 0.51 + j4.79 1.34 + j2.06
510 0.70 + j5.54 1.37 + j2.30
520 0.93 + j6.44 1.40 + j 2.50
530 1.14 + j7.56 1.42 + j2.62
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.

Input Device Output

Matching Under Matching
Network Test Network
50  50 

Zsource Zload

Figure 21. UHF Broadband Series Equivalent Source and Load Impedance — 450–520 MHz

AFT09MS007NT1
RF Device Data
Freescale Semiconductor, Inc. 17
 760–860 MHz BROADBAND REFERENCE CIRCUIT

Table 16. 760–860 MHz Broadband Performance (In Freescale Reference Circuit, 50 ohm system)
VDD = 7.5 Volts, IDQ = 150 mA, TA = 25C, CW
Frequency Pin Gps D Pout
(MHz) (W) (dB) (%) (W)
760 0.20 15.3 48.1 7.0
810 0.16 16.3 54.1 7.0
860 0.21 15.1 59.5 7.0

Table 17. Load Mismatch/Ruggedness (In Freescale Reference Circuit)

Frequency Signal Pin
(MHz) Type VSWR (W) Test Voltage, VDD Result

810 CW > 65:1 at all 0.5 9.0 No Device

Phase Angles (3 dB Overdrive) Degradation

AFT09MS007NT1
RF Device Data
18 Freescale Semiconductor, Inc.
 760–860 MHz BROADBAND REFERENCE CIRCUIT
VGG GND VDD

C1 C8 C16
J1
C9
B1 B2
AFT09MS007N Rev. 1
C15
C2
C4 R1
L1 C13

C6
C11
Q1
C3 C10 C12 C14
C5 C7

D55295

Figure 22. AFT09MS007NR1 Broadband Reference Circuit Component Layout — 760–860 MHz

Table 18. AFT09MS007NR1 Broadband Reference Circuit Component Designations and Values — 760–860 MHz
Part Description Part Number Manufacturer
B1, B2 RF Beads 2743019447 Fair-Rite
C1 10 pF Chip Capacitor GQM2195C2E100FB15 Murata
C2 3.9 pF Chip Capacitor GQM2195C2E3R9BB15 Murata
C3 7.5 pF Chip Capacitor GQM2195C2E7R5BB15 Murata
C4, C13, C16 100 pF Chip Capacitors GQM2195C2E101GB15 Murata
C5 8.2 pF Chip Capacitor GQM2195C2E8R2BB15 Murata
C6, C7 20 pF Chip Capacitors GQM2195C2E200GB15 Murata
C8 1 F Chip Capacitor GRM31MR71H105KA88L Murata
C9 10 F Chip Capacitor GRM31CR61H106KA12L Murata
C10, C11 12 pF Chip Capacitors GQM2195C2E120FB15 Murata
C12 5.1 pF Chip Capacitor GQM2195C2E5R1BB15 Murata
C14 4.7 pF Chip Capacitor GQM2195C2E4R7BB15 Murata
C15 3.9 pF Chip Capacitor GQM2195C2E3R9BB15 Murata
J1 3--pin Header 22-28-8360 Molex
L1 22 nH Inductor 0908SQ-22NJL Coilcraft
Q1 RF Power LDMOS Transistor AFT09MS007N Freescale
R1 200  Chip Resistor CRCW0805200RJNEA Vishay
PCB Shengyi S1000--2, 0.020, r = 4.8 D55295 MTL

AFT09MS007NT1
RF Device Data
Freescale Semiconductor, Inc. 19
20
AFT09MS007NT1
B1 B2
VBIAS VSUPPLY

C8 C4 C13 C9
L1
R1
Z10 RF
RF Z9 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 OUTPUT
C6
INPUT
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8
C16
C10 C11 C12 C14 C15
C1
C2 C3 C5 C7

Figure 23. AFT09MS007NT1 Broadband Reference Circuit Schematic — 760–860 MHz

Table 19. AFT09MS007NT1 Broadband Reference Circuit Microstrips — 760–860 MHz

Microstrip Description Microstrip Description Microstrip Description
Z1 0.150  0.050 Microstrip Z8 0.027  0.250 Microstrip Z15 0.115  0.180 Microstrip
Z2 0.120  0.034 Microstrip Z9 0.066  0.034 Microstrip Z16 0.160  0.034 Microstrip
Z3 0.460  0.034 Microstrip Z10 0.110  0.034 Microstrip Z17 0.360  0.034 Microstrip
Z4 0.073  0.034 Microstrip Z11 0.027  0.180 Microstrip Z18 0.105  0.034 Microstrip
Z5 0.120  0.250 Microstrip Z12 0.163  0.180 Microstrip Z19 0.150  0.050 Microstrip
Z6 0.128  0.250 Microstrip Z13 0.068  0.180 Microstrip * Line length includes microstrip bends.
Z7 0.145  0.250 Microstrip Z14 0.077  0.180 Microstrip

Freescale Semiconductor, Inc.

RF Device Data
 TYPICAL CHARACTERISTICS — 760–860 MHz BROADBAND
REFERENCE CIRCUIT

19 65

EFFICIENCY (%)
D
18 60

D, DRAIN
17 55

Gps, POWER GAIN (dB)

16 50

15 45
Gps
14 10

POWER (WATTS)
Pout, OUTPUT
13 9

12 8
Pout
11 7
VDD = 7.5 Vdc, Pin = 0.25 W, IDQ = 150 mA
10 6
740 760 780 800 820 840 860 880
f, FREQUENCY (MHz)
Figure 24. Power Gain, Output Power and Drain Efficiency versus
Frequency at a Constant Input Power — 7.5 V

14
f = 810 MHz 7
12 f = 810 MHz

Pout, OUTPUT POWER (WATTS)

6
Pout, OUTPUT POWER (WATTS)

VDD = 7.5 Vdc, Pin = 0.25 W

10
5
Detail A VDD = 7.5 Vdc, Pin = 0.1 W
8 4
VDD = 7.5 Vdc
3
6 Pin = 0.25 W
2
4 VDD = 7.5 Vdc
1
Pin = 0.1 W
2 0
0 0.5 1 1.5 2 2.5 3 3.5
0
0 1 2 3 4 VGS, GATE--SOURCE VOLTAGE (VOLTS)
VGS, GATE--SOURCE VOLTAGE (VOLTS) Detail A
Figure 25. Output Power versus Gate--Source Voltage

21 75
EFFICIENCY (%)

20 f = 860 MHz D 60
D, DRAIN

19 45
760 MHz
810 MHz
Gps, POWER GAIN (dB)

18 VDD = 7.5 Vdc 30

IDQ = 150 mA
17 810 MHz 15
860 MHz
16 12
Pout
POWER (WATTS)

15 9
Pout, OUTPUT

760 MHz
14 6
860 MHz 810 MHz Gps
13 3
760 MHz
12 0
0 0.1 0.2 0.3 0.4 0.5 0.6
Pin, INPUT POWER (WATTS)
Figure 26. Power Gain, Output Power and Drain
Efficiency versus Input Power and Frequency

AFT09MS007NT1
RF Device Data
Freescale Semiconductor, Inc. 21
 760–860 MHz BROADBAND REFERENCE CIRCUIT

Zo = 2 
f = 860 MHz

Zsource

f = 760 MHz

f = 860 MHz
Zload

f = 760 MHz

VDD = 7.5 Vdc, IDQ = 150 mA, Pout = 7 W

f Zsource Zload
MHz  
760 0.77 + j0.62 1.65 – j0.04
770 0.81 + j0.71 1.70 + j0.10
780 0.81 + j0.79 1.72 + j0.24
790 0.82 + j0.85 1.74 + j0.36
800 0.84 + j0.92 1.77 + j0.49
810 0.85 + j0.98 1.81 + j0.61
820 0.88 + j1.02 1.84 + j0.69
830 0.89 + j1.07 1.87 + 0.79
840 0.91 + 1.13 1.91 + j0.90
850 0.91 + j1.19 1.93 + j0.99
860 0.94 + j1.23 1.99 + j1.08
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.

Input Device Output

Matching Under Matching
Network Test Network
50  50 

Zsource Zload

Figure 27. Broadband Series Equivalent Source and Load Impedance — 760–860 MHz

AFT09MS007NT1
RF Device Data
22 Freescale Semiconductor, Inc.
 0.28
7.11

0.165
4.91

0.089 0.155
2.26 3.94
Solder Pad with
Thermal Via
Structure

0.085 Inches
2.16 (mm)

Figure 28. PCB Pad Layout for PLD--1.5W

A9M07
N B
YYWW
Figure 29. Product Marking

AFT09MS007NT1
RF Device Data
Freescale Semiconductor, Inc. 23
 PACKAGE DIMENSIONS

AFT09MS007NT1
RF Device Data
24 Freescale Semiconductor, Inc.
 AFT09MS007NT1
RF Device Data
Freescale Semiconductor, Inc. 25
AFT09MS007NT1
RF Device Data
26 Freescale Semiconductor, Inc.
 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS

Refer to the following documents, software and tools to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
Development Tools
 Printed Circuit Boards

For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0 June 2013  Initial Release of Data Sheet

1 Apr. 2014  Wideband Performance tables 8, 12, 16: updated to include Pin for all reference circuits, pp. 1, 8, 13, 18
 Tape and Reel information: corrected tape width information from 13--inch reel to 7--inch reel to reflect
actual reel size, p. 1
 Maximum Ratings table: changed Total Device Dissipation value from 182 to 114 W to reflect performance
at 150C, p. 2
 Fig. 4, MTTF versus Junction Temperature – CW: MTTF end temperature on graph changed to match
maximum operating junction temperature, p. 4
 Table 6, Test Circuit Component Designations and Values: updated PCB description to reflect most current
board specifications from Rogers, p. 5
 Added 350–470 MHz UHF Broadband Reference Circuit as follows:
-- Wideband Performance table, p. 1
-- Table 8, UHF Broadband Performance, p. 8
-- Table 9, Load Mismatch/Ruggedness, p. 8
-- Fig. 10, UHF Broadband Reference Circuit Component Layout, p. 9
-- Table 10, UHF Broadband Reference Circuit Component Designations and Values, p. 9
-- Fig. 11, UHF Broadband Reference Circuit Schematic, p. 10
-- Table 11, UHF Broadband Reference Circuit Microstrips, p. 10
-- Fig. 12, Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input
Power, p. 11
-- Fig. 13, Output Power versus Gate--Source Voltage, p. 11
-- Fig. 14, Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency, p. 11
-- Fig. 15, VHF Broadband Series Equivalent Source and Load Impedance, p. 12
 Table 12. Load Mismatch/Ruggedness table: changed Test Voltage from 9.0 to 10.8 Vdc to reflect true
capability of the circuit, p. 13

AFT09MS007NT1
RF Device Data
Freescale Semiconductor, Inc. 27
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AFT09MS007NT1
Document Number: AFT09MS007N RF Device Data
Rev. 1, 4/2014
28 Freescale Semiconductor, Inc.