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BSM151F Eupec

This document provides specifications for a power module including maximum ratings, electrical characteristics, and thermal characteristics. It details parameters such as voltage, current, resistance, capacitance, and thermal properties at various temperatures and operating conditions.

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Romuald Eric Tefong
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© © All Rights Reserved
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64 views

BSM151F Eupec

This document provides specifications for a power module including maximum ratings, electrical characteristics, and thermal characteristics. It details parameters such as voltage, current, resistance, capacitance, and thermal properties at various temperatures and operating conditions.

Uploaded by

Romuald Eric Tefong
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SIMOPAC® Module BSM 151 F

VDS = 500 V
ID = 56 A
R DS(on) = 0.11 Ω
● Power module
● Single switch
● FREDFET
● N channel
● Enhancement mode
● Package with insulated metal base plate
1)
● Package outline/Circuit diagram: 1

Type Ordering Code


BSM 151 F C67076-A1050-A2

Maximum Ratings

Parameter Symbol Values Unit


Drain-source voltage VDS 500 V
Drain-gate voltage, RGS = 20 kΩ VDGR 500
Gate-source voltage VGS ± 20
Continuous drain current, TC = 32 ˚C ID 56 A
Pulsed drain current, TC = 32 ˚C ID puls 224
Operating and storage temperature range Tj, Tstg – 55 … + 150 ˚C
Power dissipation, TC = 25 ˚C Ptot 700 W
Thermal resistance K/W
Chip-case Rth JC ≤ 0.18
Insulation test voltage2), t = 1 min. Vis 2500 Vac
Creepage distance, drain-source – 16 mm
Clearance, drain-source – 11
DIN humidity category, DIN 40 040 – F –
IEC climatic category, DIN IEC 68-1 – 55/150/56

1)
See chapter Package Outline and Circuit Diagrams.
2)
Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with
DIN 50 014, IEC 146, para. 492.1.

Semiconductor Group 50 03.96


http://store.iiic.cc/
BSM 151 F

Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.

Static Characteristics
Drain-source breakdown voltage V(BR)DSS V
VGS = 0, ID = 0.25 mA 500 – –
Gate threshold voltage VGS(th)
VDS = VGS, ID = 1 mA 2.1 3.0 4.0
Zero gate voltage drain current I DSS µA
VDS = 500 V, VGS = 0
Tj = 25 ˚C – 50 250
Tj = 125 ˚C – 300 1000
Gate-source leakage current IGSS nA
VGS = 20 V, VDS = 0 – 10 100
Drain-source on-state resistance RDS(on) Ω
VGS = 10 V, ID = 36 A – 0.09 0.11

Dynamic Characteristics
Forward transconductance gfs 20 30 – S
VDS ≥ 2 × ID × RDS(on)max., ID = 36 A
Input capacitance Ciss – 22 30 nF
VGS = 0, VDS = 25 V, f = 1 MHz
Output capacitance Coss – 1.6 2.4
VGS = 0, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance Crss – 0.65 1.0
VGS = 0, VDS = 25 V, f = 1 MHz
Turn-on time ton (ton = td (on) + tr) td (on) – 60 – ns
VCC = 250 V, VGS = 10 V
tr – 35 –
ID = 36 A, RGS = 3.3 Ω
Turn-off time toff (toff = td (off) + tf) td (off) – 350 –
VCC = 250 V, VGS = 10 V
tf – 70 –
ID = 36 A, RGS = 3.3 Ω

Semiconductor Group 51
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BSM 151 F

Electrical Characteristics (cont’d)


at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.

Fast-recovery reverse diode


Continuous reverse drain current IS A
TC = 25 ˚C – – 56
Pulsed reverse drain current ISM
TC = 25 ˚C – – 224
Diode forward on-voltage VSD V
IF = 96 A , VGS = 0 – 1.3 1.6
Reverse recovery time trr ns
IF = IS, diF/dt = 100 A/ µs, VR = 100 V
Tj = 25 ˚C – 200 280
Tj = 150 ˚C – 350 500
Reverse recovery charge Qrr µC
IF = IS, diF/dt = 100 A/ µs, VR = 100 V
Tj = 25 ˚C – 1.5 2.5
Tj = 150 ˚C – 8.5 12
Repetitive peak reverse current IRRM A
IF = IS, diF/dt = 100 A/ µs, VR = 100 V
Tj = 25 ˚C – 12 –
Tj = 150 ˚C – 28 –

Semiconductor Group 52
http://store.iiic.cc/
BSM 151 F

Characteristics at Tj = 25 ˚C, unless otherwise specified.


Power dissipation Ptot = f (TC) Typ. output characteristics ID = f (VDS)
parameter: Tj = 150 ˚C parameter: tp = 80 µs pulse test

Safe operating area ID = f (VDS) Typ. transfer characteristic ID = f (VGS)


parameter: single pulse, TC = 25 ˚C, parameter: tp = 80 µs , VDS = 25 V
Tj ≤ 150 ˚C (VDS)

Semiconductor Group 53
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BSM 151 F

Continuous drain current Drain-source breakdown voltage


ID = f (TC) V(BR)DSS (Tj) = b × V(BR)DSS (25 ˚C)
parameter: VGS ≥ 10 V, T j = 150 ˚C

Drain source on-state resistance Typical capacitances C = f (VDS)


RDS(on) = f (Tj) parameter: VGS = 0, f = 1 MHz
parameter: ID = 36 A; VGS = 10 V, (spread)

Semiconductor Group 54
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BSM 151 F

Forward characteristics of fast-recovery Typ. reverse recovery Qrr = f (Tj)


reverse diode IF = f (VSD) parameter:di/dt = 100 A/ µs, IF = 56 A
parameter: Tj, tp = 80 µs (spread) VR = 100 V

Semiconductor Group 55
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BSM 151 F

Transient thermal impedance ZthJC = f (tp)


parameter: D = tp/T

Typ. gate charge VGS = f (QGate)


parameter: IDpuls = 75 A

Semiconductor Group 56
http://store.iiic.cc/

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