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CHE 659A: Process Engineering Principles in Microfabrication

This document provides instructions and questions for a mid-semester exam in a process engineering principles course. It includes 3 questions worth a total of 30 marks. Question 1 asks students to calculate the final oxide thickness of a silicon wafer undergoing wet oxidation at 1200C for 60 minutes. Question 2 asks students to calculate the phosphorus implantation dosage and peak impurity concentration for a doped silicon sample. Question 3 asks students to use equations to calculate the pumping speed of a vacuum pump given pumping speeds and pressures at different points in a multi-pipe vacuum system.

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Pankaj Kumar Saini
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Download as PDF, TXT or read online on Scribd
247 views

CHE 659A: Process Engineering Principles in Microfabrication

This document provides instructions and questions for a mid-semester exam in a process engineering principles course. It includes 3 questions worth a total of 30 marks. Question 1 asks students to calculate the final oxide thickness of a silicon wafer undergoing wet oxidation at 1200C for 60 minutes. Question 2 asks students to calculate the phosphorus implantation dosage and peak impurity concentration for a doped silicon sample. Question 3 asks students to use equations to calculate the pumping speed of a vacuum pump given pumping speeds and pressures at different points in a multi-pipe vacuum system.

Uploaded by

Pankaj Kumar Saini
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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CHE 659A: Process Engineering Principles in Microfabrication

Mid Semester (February 21, 2021)

Time: 6 PM to 7:10 PM Total Questions: 3 Max. Marks: 30


(includes time for submission)

Instructions: (i) All questions are compulsory (ii) Figures to right indicate full marks
(iii) Solve all the sub-questions within the same question together (iv) Start a new question
from the fresh page (v) Cheating is completely forbidden. If anyone is found cheating at
any stage (even after the exam), he/she will be suitably punished. If two people found
involved in cheating, both will be punished

Please make a box across the final answers for each step

Q1. The initial oxide thickness on the (100) silicon wafer is 265nm. Determine the final oxide
thickness if it ran at 1200oC temperature through a wet oxidation process for 60 minutes.
Here, B and B/A are expressed by Arrhenius equations and their values can be calculated from
the same equation.
𝐵 𝐸1
= 𝐶1 exp⁡( )
𝐴 𝑘𝑇
𝐸2
𝐵 = 𝐶2 exp⁡( )
𝑘𝑇
C1 and C2 are pre-exponential constants and their values are 9.7*107μm/hr and 416 μm2/hr and
E1 and E2 are activation energies and their values are 2.1 eV and 0.8 eV for B and B/A
respectively.
Value of Boltzmann constant 8.617*10-5 eV/K.
(10 Marks)

Q2. What will be the phosphorous implantation dosage if a P-type silicon sample is doped with
1016 /cm3 of phosphorous. The implantation is performed for 9.5 min at a beam current density
of 1.6 μA/cm2.
Given, Rp=1 μm ΔRp= 0.2 μm qe=1.6*10-19 C
Also find the peak impurity concentration. (10 Marks)
Q3. A vacuum vessel of 1m length and 350mm diameter is evacuated by a vacuum pump via
two pipes of different diameters connected in series as shown in the picture.
350 mm
290 mm
Vessel
P1 50 mm 40 mm P2 Pump

The pressure at the right-hand side of the pipe1= 0.15 Pa and at the left hand side of the
pipe 2 = 0.01 Pa .

The pumping speed at the mouth of the vessel is 0.0012 m3/s, Find out the pumping
speed of the vacuum pump.
The relationship between Conductance (C) and throughput (Q) here is given by

𝐷3
Q = 80⁡ (P1-P2)
𝐿
where, Q=C(P1-P2) (10 Marks)

****All the best****

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