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Datasheet 2SD1348 SILICON NPN POWER TRANSISTOR

This document provides product specifications for the Inchange Semiconductor 2SD1348 silicon NPN power transistor. It includes details on the TO-126 package, applications for power supplies and drivers, pin descriptions, and absolute maximum ratings like collector current of 4A. Key electrical characteristics are also specified such as a collector-emitter saturation voltage below 0.5V and DC current gains ranging from 100 to 560 depending on current and voltage conditions.

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108 views3 pages

Datasheet 2SD1348 SILICON NPN POWER TRANSISTOR

This document provides product specifications for the Inchange Semiconductor 2SD1348 silicon NPN power transistor. It includes details on the TO-126 package, applications for power supplies and drivers, pin descriptions, and absolute maximum ratings like collector current of 4A. Key electrical characteristics are also specified such as a collector-emitter saturation voltage below 0.5V and DC current gains ranging from 100 to 560 depending on current and voltage conditions.

Uploaded by

Paty Raga
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1348

DESCRIPTION ·
·With TO-126 package
·Complement to type 2SB986
·High current capacity

APPLICATIONS
·Power supplies,relay drivers,lamp
drivers,electrical equipment

PINNING

PIN DESCRIPTION

1 Emitter

Collector;connected to
2
mounting base

3 Base

Absolute maximum ratings(Ta=25℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 60 V

VCEO Collector-emitter voltage Open base 50 V

VEBO Emitter-base voltage Open collector 6 V

IC Collector current 4 A

ICM Collector current-peak 6 A

Ta=25℃ 1.2
PD Total power dissipation W
TC=25℃ 10

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃


Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1348

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=1.0mA ;RBE=∞ 50 V

V(BR)EBO Emitter-base breakdown voltage IE=10μA ;IC=0 6 V

V(BR)CBO Collector-base breakdown voltage IC=10μA ;IE=0 60 V

VCEsat Collector-emitter saturation voltage IC=2.0A; IB=0.1A 0.5 V

VBEsat Base-emitter saturation voltage IC=2.0A; IB=0.1A 1.2 V

ICBO Collector cut-off current VCB=40V; IE=0 1.0 mA

IEBO Emitter cut-off current VEB=4V; IC=0 1.0 mA

hFE-1 DC current gain IC=100mA ; VCE=2V 100 560

hFE-2 DC current gain IC=3A ; VCE=2V 40

fT Transition frequency IC=50mA ; VCE=10V 150 MHz

COB Collector output capacitance f=1MHz ; VCB=10V 25 pF

‹ hFE-1 Classifications

R S T U

100-200 140-280 200-400 280-560

2
Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1348

PACKAGE OUTLINE

Fig.2 Outline dimensions

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