Project 1

TCAD Simulation

SILVACO

Daewon Kim

Assistant Professor
Nano Energy Device Laboratory
Department of Electronic Engineering
Kyung Hee University
 Goals

▪ Design simulation code of metal-semiconductor junction with splitting

▪ Plot potential graph and I-V curve in accordance with

─ Different metal, (T = 300 K, Doping concentration = 1016 cm-3)
─ Varying temperature,
─ Doping concentration of silicon
─ Doping type of silicon (N-type, P-type).

▪ Comparing Schottky and PN diode

y=0
Anode Cathode
VAnode Metal Si

y=1
x=0 x=1 x=2

Department of Laboratory for

Electronic Engineering Nano Energy Device
 Codes
go atlas
model conmob fldmob srh auger bgn bbt.std temp=$kelvin
set dopant=1e16
set metalwork=4.87 contact name=( ) workf=$metalwork
set kelvin=500
method newton
mesh space.mult=1.0
output con.band val.band schottky qfn qfp
x.mesh loc=0 spac=0.1
x.mesh loc=1 spac=0.05 solve init
x.mesh loc=2 spac=0.05
solve v( )=-0.01 name=( )
y.mesh loc=0 spac=0.1 solve v( )=-0.1 name=( )
y.mesh loc=1 spac=0.1 solve v( )=-1 name=( )

region num=1 silicon x.min=0 x.max=2 y.min=0 y.max=1 save outf=mss_temp1.str

log outf=msg_temp1.log
electrode name=( ) x.min=0 x.max=1 y.min=0 y.max=1 solve v( )=-1 vstep=0.05 vfinal=2 name=( )
electrode name=( ) x.min=2 x.max=2 y.min=0 y.max=1 log off

doping n.type conc=$dopant region=1 uniform quit

Electrodes are divided into two types. Electrodes that emits electrons or carry out the oxidation reactions are called anode. The Cathode is an
electrode in which electrons enter or a reduction reaction occurs. Analyze the code and fill in the appropriate electrode type in ( ).
Hint ( Do not use capital letters.)

Department of Laboratory for

Electronic Engineering Nano Energy Device
 Instruction for Silvaco

▪ Contact
(a) Vacuum level, E0

Ψsi
─ To change the work function (qΨM) of the metal qΨM
qχsi = 4.17 eV
Ec
EF
─ Default contact: Ohmic contact EFm Eg = 1.08 eV
Metal
(Reference: Atlas manual 2.5.2) Ev

─ χ (Si): 4.17 eV
(b) I. qΨM > qΨsi for n-type silicon
─ Eg (Si): 1.08 eV Ec
qΦBn
EF

─ Set-up to check conduction band, valence band, Ev

and fermi level

(c) II. qΨM > qΨsi for n-type silicon

˃ output con.band val.band qfn qfp Ec

EF

Ev

Figure 2. Energy band diagrams of (a) before

contacting between a metal and silicon layers,
(b) a Schottky contact, and (c) an ohmic contact.

Department of Laboratory for

Electronic Engineering Nano Energy Device
 Instruction for Silvaco

▪ Model
─ 1) To change the temperature
─ 2) To change the doping profile
˃ To consider the tunneling effect this statement should be added
˃ models bbt.std

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Electronic Engineering Nano Energy Device
 Hint for Simulation Code

▪ Changing the type of doping in silicon

─ To satisfy the ΦBn=ΦBp

─ Setting the work function of each metal

˃ In ΦBp,
˃ ΦBp =χsi - Eg / q - ΨM (= 4.17 - 0.54 - ΨM)

˃ In ΦBn,
˃ ΦBn = ΨM - χsi (= ΨM - 4.17)

Department of Laboratory for

Electronic Engineering Nano Energy Device
 Result Figures (cont’d)

(a) (b)
M=4.57eV
-4
1.4x10 10
-4 M=4.77eV
M=4.97eV

1.2x10
-4 M= 4.57eV -6 M=5.17eV
10
M= 4.77eV
Anode current(A)

Anode Current(A)
-4
1.0x10 M= 4.97eV 10
-8

-5
M= 5.17eV
8.0x10 10
-10

-5
6.0x10 10
-12

-5 -14
4.0x10 10
-5 -16
2.0x10 10

0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -1.0 -0.8 -0.6 -0.4 -0.2 0.0

Anode Voltage(V) Anode Voltage(V)

I-V characteristics of Schottky contact according to work function of metal.

(a) Forward bias (b) Reverse bias

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 Result Figures (cont’d)

(a) (b)
0.6
1.0 bi
qbi

Depletion width, Wdep

q Bn

Built-in potential, bi

Ec Wdep 0.5
0.8
EF
0.4
0.6

Wdep
0.4 0.3

Metal Ev 0.2
0.2

4.57 4.77 4.97 5.17 5.37

Metal work function

(a) Band diagram of Schottky contact (b) Relationship between φbi ,

Wdep and metal work function.

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Electronic Engineering Nano Energy Device
 Result Figures (cont’d)

-4
2.0x10
-4
1.5x10
-4

Anode Current(A)
1.0x10
-5
M=3.97
5.0x10
M=4.37
0.0
-5
-5.0x10
-4
-1.0x10
-4
-1.5x10
-4
-2.0x10
-1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0

Anode (Anode)

I-V characteristic in case of φM < φsi

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 Result Figures (cont’d)

(a) (b)
-5
8.0x10

200K
-5
250K
Anode Current(A)

6.0x10
300K
350K
4.0x10
-5 400K
450K
500K
-5
2.0x10

T↑
0.0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Anode Voltage(V)

I-V characteristics of Schottky contact according to temperature. (a)

Forward bias (b) Reverse bias

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Electronic Engineering Nano Energy Device
 Result Figures (cont’d)

(a) (b)
-2
0.20 0.20 1.4x10
19
Nd=10
0.15 20 0.15 Nd=10
20
Nd 1.2x10
-2
Nd=10
20
Nd=2x10
20 Nd=2x10 -2
0.10 0.10
Anode Current(A)

Anode Current(A)
20
1.0x10
Nd=3x10
20
Nd=3x10
-3
0.05 Nd=4x10
20 0.05 20 8.0x10
Nd=4x10
-3
0.00 0.00 6.0x10
18
-0.05 -0.05 Nd=10 -3
4.0x10
19
Nd=10 -3
-0.10 -0.10 Nd↑ 2.0x10
-0.15 -0.15 0.0
-3
-0.20 -0.20 -2.0x10
-0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8

Anode Voltage(V) Anode Voltage(V)

I-V characteristics according to temperature. (a) Forward bias (b)

Reverse bias

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Electronic Engineering Nano Energy Device
 Result Figures (cont’d)

-4
2.0x10

-4
1.5x10

Current(A)
-4
n-type si
1.0x10
p-type si

-5
5.0x10

0.0
0.5 0.6 0.7 0.8 0.9 1.0

Voltage(V)

I-V characteristics with different doping types with same work function

Department of Laboratory for

Electronic Engineering Nano Energy Device
 Result Figures (cont’d)

(a) -4
1.0x10
(b) -4
10
-6
-5
10
8.0x10
Anode Current(A)

Anode Current(A)
-8
10
PN diode
-10
M-si diode
-5
6.0x10 10 M-si diode
-5
10
-12
PN diode
4.0x10
-14
10
-16
-5
2.0x10 10
-18
10
0.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -0.5 -0.4 -0.3 -0.2 -0.1 0.0

Anode Voltage(V) Anode Voltage(V)

Comparison of PN junction diode and Schottky diode

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Electronic Engineering Nano Energy Device
 Notice

▪ Students should submit theoretical analysis along with plotted graphs.

▪ License is limited to 40 people only. Hence, students should be aware

of this.

▪ Silvaco can only be accessed using the school`s internal IP.

─ (ex : khu wifi)
─ For security reasons, it cannot be used outside the school.

Department of Laboratory for

Electronic Engineering Nano Energy Device