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Silicon Controlled Rectifiers: High-Reliability Discrete Products and Engineering Services Since 1977

The document provides specifications for a series of silicon controlled rectifiers (SCRs) rated for blocking voltages from 50V to 800V (2N6394 to 2N6399). Key specifications include maximum ratings for blocking voltage, current, and power. Thermal and electrical characteristics are also listed such as on-state voltage, gate trigger voltage, and turn-on/off times. The SCRs are available with standard or Pb-free plating and can be screened for high reliability applications.

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Bashir Mtwakl
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36 views6 pages

Silicon Controlled Rectifiers: High-Reliability Discrete Products and Engineering Services Since 1977

The document provides specifications for a series of silicon controlled rectifiers (SCRs) rated for blocking voltages from 50V to 800V (2N6394 to 2N6399). Key specifications include maximum ratings for blocking voltage, current, and power. Thermal and electrical characteristics are also listed such as on-state voltage, gate trigger voltage, and turn-on/off times. The SCRs are available with standard or Pb-free plating and can be screened for high reliability applications.

Uploaded by

Bashir Mtwakl
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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2N6394-2N6399

High-reliability discrete products SILICON CONTROLLED RECTIFIERS


and engineering services since 1977

FEATURES
• Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
• Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS
Rating Symbol Value Unit
Peak repetitive forward and reverse blocking voltage(1)
(TJ = -40 to +125°C, sine wave, 50 to 60 Hz, gate open)
2N6394 50
2N6395 100
VRRM, VDRM Volts
2N6396 200
2N6397 400
2N6398 600
2N6399 800
On state RMS current
IT(RMS) Amps
(180° conduction angles, TC = 90°C) 12
Peak non-repetitive surge current
ITSM Amps
(1/2 cycle, 60Hz, sine wave, TJ = 90°C) 100
Circuit fusing considerations (t = 8.3ms) I2t 40 A2s
Forward peak gate power (pulse width ≤ 1.0µs, TC = 90ۜ°C) PGM 20 Watts
Forward average gate power (t = 8.3ms, TC = 90°C) PG(AV) 0.5 Watts
Forward peak gate current (pulse width ≤ 1.0µs, TC = 90ۜ°C) IGM 2 Amps
Operating junction temperature range TJ -40 to +125 °C
Storage temperature range Tstg -40 to +150 °C
Note 1: VDRM and VRRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied
concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

THERMAL CHARACTERISTICS
Characteristic Symbol Maximum Unit

Thermal resistance, junction to case RӨJC 2.0 °C/W

Maximum lead temperature for soldering purposes 1/8” from case for 10 seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C)


Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Peak forward or reverse blocking current
(VAK = Rated VDRM or VRRM, gate open)
IDRM or IRRM
TJ = 25°C - - 10 µA
TJ = 100°C - - 2.0 mA
ON CHARACTERISTICS
Peak forward on-state voltage (2)
VTM Volts
(ITM = 24A peak) - 1.7 2.2
Gate trigger current (continuous dc)
IGT mA
(VD = 12 Vdc, RL = 100 Ω) - 5.0 30

Rev. 20180102
2N6394-2N6399
High-reliability discrete products SILICON CONTROLLED RECTIFIERS
and engineering services since 1977

ELECTRICAL CHARACTERISTICS (TC = 25°C)


Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Gate trigger voltage (continuous dc)
VGT Volts
(VD = 12 Vdc, RL = 100 Ω) - 0.7 1.5
Gate non-trigger voltage
VGD Volts
(VD = 12 Vdc, RL = 100 Ω, TJ = 125°C) 0.2 - -
Holding current
IH mA
(VD = 12Vdc, initiating current = 200mA, gate open) - 6.0 50
Turn on time
tgt µs
(ITM = 12A, IGT = 40mAdc, VD = rated VDRM) - 1.0 2.0
Turn-off time (VD = rated VDRM) tq µs
(ITM = 12A, IR = 12A) - 15 -
(ITM = 12A, IR = 12A, TJ = 125°C) - 35 -
DYNAMIC CHARACTERISTICS
Critical rate of rise of off-state voltage exponential dv/dt V/µs
(VD = rated VDRM, TJ = 125°C) - 50 -
Note 2: Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.

MECHANICAL CHARACTERISTICS
Case: TO-220AB
Marking: Body painted, alpha-numeric
Pin out: See below

Rev. 20180102
2N6394-2N6399
High-reliability discrete products SILICON CONTROLLED RECTIFIERS
and engineering services since 1977

Rev. 20180102
2N6394-2N6399
High-reliability discrete products SILICON CONTROLLED RECTIFIERS
and engineering services since 1977

Rev. 20180102
2N6394-2N6399
High-reliability discrete products SILICON CONTROLLED RECTIFIERS
and engineering services since 1977

Rev. 20180102
2N6394-2N6399
High-reliability discrete products SILICON CONTROLLED RECTIFIERS
and engineering services since 1977

Rev. 20180102

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