HGTG20N60C3, HGTP20N60C3,

HGT1S20N60C3S
Data Sheet December 2001

45A, 600V, UFS Series N-Channel IGBT Features

This family of MOS gated high voltage switching devices • 45A, 600V, TC = 25oC
combining the best features of MOSFETs and bipolar
• 600V Switching SOA Capability
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar • Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC
transistor. The much lower on-state voltage drop varies only • Short Circuit Rating
moderately between 25oC and 150oC.
• Low Conduction Loss
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low • Related Literature
conduction losses are essential, such as: AC and DC motor - TB334 “Guidelines for Soldering Surface Mount
controls, power supplies and drivers for solenoids, relays Components to PC Boards”
and contactors.
Packaging
Formerly developmental type TA49178. JEDEC STYLE TO-247

Ordering Information E
C
G
PART NUMBER PACKAGE BRAND

HGTG20N60C3 TO-247 G20N60C3

HGTP20N60C3 TO-220AB G20N60C3 COLLECTOR

(FLANGE)
HGT1S20N60C3S TO-263AB G20N60C3

NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N60C3S9A.

JEDEC TO-220AB (ALTERNATE VERSION)

Symbol
C

E
G C
G
E COLLECTOR
(FLANGE)

JEDEC TO-263AB

COLLECTOR
G (FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713

4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

©2001 Fairchild Semiconductor Corporation HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B

 HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

ALL TYPES UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 45 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 20 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 300 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 20A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 164 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E ARV 100 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300 oC
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 260 oC

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 4 µs

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 10 µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 10Ω.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V
Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 28 - V
Collector to Emitter Leakage Current ICES VCE = BVCES TC = 25oC - - 250 µA
TC = 150oC - - 5.0 mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110 TC = 25oC - 1.4 1.8 V
VGE = 15V
TC = 150oC - 1.5 1.9 V
Gate to Emitter Threshold Voltage VGE(TH) IC = 250µA, VCE = VGE 3.4 4.8 6.3 V
Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA
Switching SOA SSOA TJ = 150oC, RG = VCE = 480V 120 - - A
10Ω, VGE = 15V,
VCE = 600V 20 - - A
L = 100µH
Gate to Emitter Plateau Voltage VGEP ICE = IC110, VCE = 0.5 BVCES - 8.4 - V
On-State Gate Charge QG(ON) ICE = IC110 VGE = 15V - 91 110 nC
VCE = 0.5 BVCES
VGE = 20V - 122 145 nC
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC - 28 32 ns
ICE = IC110
Current Rise Time trI - 24 28 ns
VCE = 0.8 BVCES
Current Turn-Off Delay Time td(OFF)I VGE = 15V - 151 210 ns
Current Fall Time tfI RG = 10Ω - 55 98 ns
L = 1mH
Turn-On Energy (Note 4) EON1 Test Circuit (Figure 17) - 295 320 µJ
Turn-On Energy (Note 4) EON2 - 500 550 µJ
Turn-Off Energy (Note 3) EOFF - 500 700 µJ

©2001 Fairchild Semiconductor Corporation HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B

 HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S

Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 150oC - 28 32 ns
Current Rise Time trI ICE = IC110
- 24 28 ns
VCE = 0.8 BVCES
Current Turn-Off Delay Time td(OFF)I VGE = 15V - 280 450 ns
Current Fall Time tfI RG = 10Ω - 108 210 ns
L = 1mH
Turn-On Energy (Note 4) EON1 Test Circuit (Figure 17) - 380 410 µJ
Turn-On Energy (Note 4) EON2 - 1.0 1.1 mJ
Turn-Off Energy (Note 3) EOFF - 1.2 1.7 mJ
Thermal Resistance Junction To Case RθJC - - 0.76 oC/W

NOTES:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E ON1 is the turn-on loss of the IGBT only. EON2 is the
turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17.

Typical Performance Curves Unless Otherwise Specified

ICE , COLLECTOR TO EMITTER CURRENT (A)

50 140
VGE = 15V TJ = 150oC, RG = 10Ω, VGE = 15V, L = 100µH
ICE , DC COLLECTOR CURRENT (A)

120
40
100

30
80

60
20

40
10
20

0 0
25 50 75 100 125 150 0 100 200 300 400 500 600 700

TC , CASE TEMPERATURE (oC) VCE , COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 1. DC COLLECTOR CURRENT vs CASE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TEMPERATURE
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)

TJ = 150oC, RG = 10Ω, 14 450

ISC , PEAK SHORT CIRCUIT CURRENT (A)

fMAX , OPERATING FREQUENCY (kHz)

L = 1mH, V CE = 480V VCE = 360V, RG = 10Ω, TJ = 125oC

100
12 400
TC VGE ISC
75oC 15V
75oC 10V 10 350
110oC 15V
110oC 10V 8 300
10
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF) 6 250

PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%) 4 200
tSC
RØJC = 0.76oC/W, SEE NOTES
1 2 150
2 5 10 20 40 10 11 12 13 14 15
ICE , COLLECTOR TO EMITTER CURRENT (A) VGE , GATE TO EMITTER VOLTAGE (V)

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

EMITTER CURRENT

©2001 Fairchild Semiconductor Corporation HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B

 HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S

Typical Performance Curves Unless Otherwise Specified (Continued)

ICE , COLLECTOR TO EMITTER CURRENT (A)

ICE , COLLECTOR TO EMITTER CURRENT (A)

100 300
DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250µs
80 250
TC = 25oC
TC = -55oC TC = 25oC 200
60

TC = 150oC 150
40 TC = -55oC
100 TC = 150oC

20
50
DUTY CYCLE <0.5%, VGE = 10V
PULSE DURATION = 250µs
0 0
0 2 4 6 8 10 0 1 2 3 4 5 6
VCE , COLLECTOR TO EMITTER VOLTAGE (V) VCE , COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

4.0 3.0
RG = 10Ω, L = 1mH, V CE = 480V
EON2 , TURN-ON ENERGY LOSS (mJ)

RG = 10Ω, L = 1mH, VCE = 480V

EOFF, TURN-OFF ENERGY LOSS (mJ)

3.5
2.5
3.0
TJ = 25oC, TJ = 150oC, VGE = 10V
2.0
2.5
TJ = 150oC; VGE = 10V OR 15V
2.0 1.5

1.5
1.0
1.0
0.5 TJ = 25oC; VGE = 10V OR 15V
0.5
TJ = 25oC, TJ = 150oC, VGE = 15V
0 0
5 10 15 20 25 30 35 40 5 10 15 20 25 30 35 40
ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT EMITTER CURRENT

50 200
RG = 10Ω, L = 1mH, VCE = 480V RG = 10Ω, L = 1mH, VCE = 480V
175
tdI , TURN-ON DELAY TIME (ns)

45
150
trI , RISE TIME (ns)

TJ = 25oC, TJ = 150oC, VGE = 10V

40
125
TJ = 25oC, TJ = 150oC, VGE = 10V
35 100

75
30
50
25 25
TJ = 25oC, TJ = 150oC, VGE = 15V TJ = 25oC AND TJ = 150oC, VGE = 15V
20 0
5 10 15 20 25 30 35 40 5 10 15 20 25 30 35 40
ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT EMITTER CURRENT

©2001 Fairchild Semiconductor Corporation HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B

 HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S

Typical Performance Curves Unless Otherwise Specified (Continued)

300 120
RG = 10Ω, L = 1mH, VCE = 480V RG = 10Ω, L = 1mH, VCE = 480V
td(OFF)I , TURN-OFF DELAY TIME (ns)

275 110

250 100

tfI , FALL TIME (ns)

TJ = 150oC, VGE = 10V OR VGE = 15V
225 90
TJ = 150oC, VGE = 10V, VGE = 15V
200 80
TJ = 25oC, VGE = 10V, VGE = 15V
175 70
TJ = 25oC, VGE = 10V OR 15V
150 60

125 50

100 40
5 10 15 20 25 30 35 40 5 10 15 20 25 30 35 40
ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
EMITTER CURRENT CURRENT
ICE , COLLECTOR TO EMITTER CURRENT (A)

300 16
DUTY CYCLE <0.5%, VCE = 10V IG (REF) = 1mA, RL = 15Ω, TC = 25oC
PULSE DURATION = 250µs VGE, GATE TO EMITTER VOLTAGE (V) 14
250
12
200 TC = -55oC
10 VCE = 600V

150 TC = 150oC 8

6 VCE = 200V
100 VCE = 400V
TC = 25oC 4
50
2

0 0
5 6 7 8 9 10 11 12 13 14 15 0 10 20 30 40 50 60 70 80 90 100
VGE , GATE TO EMITTER VOLTAGE (V) Qg, GATE CHARGE (nC)

FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS

5
FREQUENCY = 1MHz
CIES
4
C, CAPACITANCE (nF)

2
COES

1
CRES

0
0 5 10 15 20 25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE

©2001 Fairchild Semiconductor Corporation HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B

 HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S

Typical Performance Curves

ZθJC , NORMALIZED THERMAL RESPONSE Unless Otherwise Specified (Continued)

100
0.5

0.2
0.1
10-1 0.05
0.02

0.01
10-2 t1
SINGLE PULSE
PD
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC t2
10-3 -5
10 10-4 10-3 10-2 10-1 100 101
t1 , RECTANGULAR PULSE DURATION (s)

FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

Test Circuit and Waveforms

RHRP3060
90%

VGE 10%
EON2
L = 1mH EOFF
VCE
RG = 10Ω
90%

+ ICE 10%
VDD = 480V td(OFF)I trI
- tfI
td(ON)I

FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 18. SWITCHING TEST WAVEFORMS

©2001 Fairchild Semiconductor Corporation HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B

 HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S

Handling Precautions for IGBTs Operating Frequency Information

Insulated Gate Bipolar Transistors are susceptible to Operating frequency information for a typical device
gate-insulation damage by the electrostatic discharge of (Figure 3) is presented as a guide for estimating device
energy through the devices. When handling these devices, performance for a specific application. Other typical
care should be exercised to assure that the static charge frequency vs collector current (ICE) plots are possible using
built in the handler’s body capacitance is not discharged the information shown for a typical unit in Figures 5, 6, 7, 8, 9
through the device. With proper handling and application and 11. The operating frequency plot (Figure 3) of a typical
procedures, however, IGBTs are currently being extensively device shows fMAX1 or fMAX2; whichever is smaller at each
used in production by numerous equipment manufacturers in point. The information is based on measurements of a
military, industrial and consumer applications, with virtually typical device and is bounded by the maximum rated
no damage problems due to electrostatic discharge. IGBTs junction temperature.
can be handled safely if the following basic precautions are
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
taken:
Deadtime (the denominator) has been arbitrarily held to 10%
1. Prior to assembly into a circuit, all leads should be kept of the on-state time for a 50% duty factor. Other definitions
shorted together either by the use of metal shorting are possible. td(OFF)I and td(ON)I are defined in Figure 18.
springs or by the insertion into conductive material such Device turn-off delay can establish an additional frequency
as “ECCOSORBD™ LD26” or equivalent. limiting condition for an application other than T JM. td(OFF)I
2. When devices are removed by hand from their carriers, is important when controlling output ripple under a lightly
the hand being used should be grounded by any suitable loaded condition.
means - for example, with a metallic wristband.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
3. Tips of soldering irons should be grounded.
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
4. Devices should never be inserted into or removed from
The sum of device switching and conduction losses must
circuits with power on.
not exceed PD. A 50% duty factor was used (Figure 3) and
5. Gate Voltage Rating - Never exceed the gate-voltage the conduction losses (P C) are approximated by
rating of VGEM. Exceeding the rated VGE can result in
PC = (VCE x ICE)/2.
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are EON2 and EOFF are defined in the switching waveforms
essentially capacitors. Circuits that leave the gate open- shown in Figure 18. EON2 is the integral of the
circuited or floating should be avoided. These conditions instantaneous power loss (ICE x VCE) during turn-on and
can result in turn-on of the device due to voltage buildup EOFF is the integral of the instantaneous power loss
on the input capacitor due to leakage currents or pickup. (ICE x VCE) during turn-off. All tail losses are included in
7. Gate Protection - These devices do not have an internal the calculation for EOFF; i.e., the collector current equals
monolithic Zener diode from gate to emitter. If gate zero (ICE = 0).
protection is required an external Zener is recommended.

©2001 Fairchild Semiconductor Corporation HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FAST  OPTOLOGIC™ SMART START™ VCX™
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DenseTrench™ GTO™ Power247™ SuperSOT™-6
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EnSignaTM MicroFET™ QT Optoelectronics™ TruTranslation™
FACT™ MicroPak™ Quiet Series™ UHC™
FACT Quiet Series™ MICROWIRE™ SILENT SWITCHER  UltraFET 
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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As used herein:
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systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
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user.
PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4