Technische Information / Technical Information

IGBT-Module
IGBT-Modules BSM75GB120DLC

Höchstzulässige Werte / Maximum rated values

Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
VCES 1200 V
collector-emitter voltage

Kollektor-Dauergleichstrom TC = 80 °C IC,nom. 75 A
DC-collector current TC = 25 °C IC 170 A

Periodischer Kollektor Spitzenstrom

tP = 1 ms, TC = 80°C ICRM 150 A
repetitive peak collector current

Gesamt-Verlustleistung
TC=25°C, Transistor Ptot 690 W
total power dissipation

Gate-Emitter-Spitzenspannung
VGES +/- 20V V
gate-emitter peak voltage

Dauergleichstrom
IF 75 A
DC forward current

Periodischer Spitzenstrom
tP = 1 ms IFRM 150 A
repetitive peak forw. current

Grenzlastintegral der Diode 2

2 VR = 0V, t p = 10ms, T Vj = 125°C I t 1,19 kA2s
I t - value, Diode

Isolations-Prüfspannung
RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV
insulation test voltage

Charakteristische Werte / Characteristic values

Transistor / Transistor min. typ. max.
Kollektor-Emitter Sättigungsspannung IC = 75A, V GE = 15V, Tvj = 25°C VCE sat - 2,1 2,6 V
collector-emitter saturation voltage IC = 75A, V GE = 15V, Tvj = 125°C - 2,4 2,9 V

Gate-Schwellenspannung
IC = 3mA, V CE = VGE, Tvj = 25°C VGE(th) 4,5 5,5 6,5 V
gate threshold voltage

Gateladung
VGE = -15V...+15V QG - 0,8 - µC
gate charge

Eingangskapazität
f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V Cies - 5,1 - nF
input capacitance

Rückwirkungskapazität
f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V Cres - 0,33 - nF
reverse transfer capacitance

Kollektor-Emitter Reststrom VCE = 1200V, V GE = 0V, Tvj = 25°C ICES - 3 92 µA

collector-emitter cut-off current VCE = 1200V, V GE = 0V, Tvj = 125°C - 300 - µA

Gate-Emitter Reststrom
VCE = 0V, V GE = 20V, Tvj = 25°C IGES - - 400 nA
gate-emitter leakage current

prepared by: Mark Münzer date of publication: 9.9.1999

approved by: M. Hierholzer revision: 2

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Charakteristische Werte / Characteristic values

Transistor / Transistor min. typ. max.
Einschaltverzögerungszeit (ind. Last) IC = 75A, V CE = 600V
turn on delay time (inductive load) VGE = ±15V, R G = 10Ω, Tvj = 25°C td,on - 0,05 - µs

VGE = ±15V, R G = 10Ω, Tvj = 125°C - 0,06 - µs

Anstiegszeit (induktive Last) IC = 75A, V CE = 600V

rise time (inductive load) VGE = ±15V, R G = 10Ω, Tvj = 25°C tr - 0,05 - µs

VGE = ±15V, R G = 10Ω, Tvj = 125°C - 0,05 - µs

Abschaltverzögerungszeit (ind. Last) IC = 75A, V CE = 600V

turn off delay time (inductive load) VGE = ±15V, R G = 10Ω, Tvj = 25°C td,off - 0,3 - µs

VGE = ±15V, R G = 10Ω, Tvj = 125°C - 0,35 - µs

Fallzeit (induktive Last) IC = 75A, V CE = 600V

fall time (inductive load) VGE = ±15V, R G = 10Ω, Tvj = 25°C tf - 0,05 - µs

VGE = ±15V, R G = 10Ω, Tvj = 125°C - 0,07 - µs

Einschaltverlustenergie pro Puls IC = 75A, V CE = 600V, V GE = 15V

turn-on energy loss per pulse RG = 10Ω, Tvj = 125°C, LS = 60nH Eon - 7,5 - mWs

Abschaltverlustenergie pro Puls IC = 75A, V CE = 600V, V GE = 15V

turn-off energy loss per pulse RG = 10Ω, Tvj = 125°C, LS = 60nH Eoff - 9 - mWs

Kurzschlußverhalten tP ≤ 10µsec, V GE ≤ 15V, R G = 10Ω

SC Data TVj≤125°C, V CC=900V, V CEmax=VCES -LsCE ·dI/dt ISC - 540 - A

Modulinduktivität
LsCE - 40 - nH
stray inductance module

Modul Leitungswiderstand, Anschlüsse – Chip

TC=25°C RCC‘+EE‘ - 1,0 - mΩ
module lead resistance, terminals – chip

Charakteristische Werte / Characteristic values

Diode / Diode min. typ. max.
Durchlaßspannung IF = 75A, V GE = 0V, Tvj = 25°C VF - 1,8 2,3 V
forward voltage IF = 75A, V GE = 0V, Tvj = 125°C - 1,7 2,2 V

Rückstromspitze IF = 75A, - di F/dt = 2000A/µsec

peak reverse recovery current VR = 600V, VGE = -15V, T vj = 25°C IRM - 85 - A
VR = 600V, VGE = -15V, T vj = 125°C - 105 - A

Sperrverzögerungsladung IF = 75A, - di F/dt = 2000A/µsec

recovered charge VR = 600V, VGE = -15V, T vj = 25°C Qr - 9 - µAs

VR = 600V, VGE = -15V, T vj = 125°C - 16,5 - µAs

Abschaltenergie pro Puls IF = 75A, - di F/dt = 2000A/µsec

reverse recovery energy VR = 600V, VGE = -15V, T vj = 25°C Erec - 3 - mWs

VR = 600V, VGE = -15V, T vj = 125°C - 6,2 - mWs

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Thermische Eigenschaften / Thermal properties

min. typ. max.
Innerer Wärmewiderstand Transistor / transistor, DC RthJC - - 0,18 K/W
thermal resistance, junction to case Diode/Diode, DC - - 0,5 K/W

Übergangs-Wärmewiderstand pro Modul / per module

RthCK - 0,05 - K/W
thermal resistance, case to heatsink λΠαστε = 1 W/m * K / λgrease = 1 W/m * K

Höchstzulässige Sperrschichttemperatur
Tvj - - 150 °C
maximum junction temperature

Betriebstemperatur
Top -40 - 125 °C
operation temperature

Lagertemperatur
Tstg -40 - 150 °C
storage temperature

Mechanische Eigenschaften / Mechanical properties

Gehäuse, siehe Anlage

case, see appendix

Innere Isolation
AL2O3
internal insulation

Kriechstrecke
20 mm
creepage distance

Luftstrecke
11 mm
clearance

CTI
275
comperative tracking index

Anzugsdrehmoment f. mech. Befestigung terminals M6 M1 3 6 Nm

mounting torque

Anzugsdrehmoment f. elektr. Anschlüsse terminals M5 M2 2,5 5 Nm

terminal connection torque

Gewicht
G 250 g
weight

Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.

This technical information specifies semiconductor devices but promises no characteristics. It is

valid in combination with the belonging technical notes.

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Ausgangskennlinie (typisch) IC = f (VCE)

Output characteristic (typical) V GE = 15V

150

125 Tj = 25°C
Tj = 125°C

100
IC [A]

75

50

25

0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0

VCE [V]

Ausgangskennlinienfeld (typisch) IC = f (VCE)

Output characteristic (typical) T vj = 125°C

150

125 VGE = 17V

VGE = 15V
VGE = 13V
100 VGE = 11V
VGE = 9V
VGE = 7V
IC [A]

75

50

25

0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0

VCE [V]

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Übertragungscharakteristik (typisch) IC = f (VGE)

Transfer characteristic (typical) VCE = 20V

150

125 Tj = 25°C
Tj = 125°C

100
IC [A]

75

50

25

0
5 6 7 8 9 10 11 12

VGE [V]

Durchlaßkennlinie der Inversdiode (typisch) IF = f (VF)

Forward characteristic of inverse diode (typical)

150

125 Tj = 25°C
Tj = 125°C

100
IF [A]

75

50

25

0
0,0 0,5 1,0 1,5 2,0 2,5 3,0

VF [V]

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Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)

Switching losses (typical) VGE=15V, Rgon = Rgoff =10 Ω , VCE = 600V, T j = 125°C
24

Eoff
20 Eon
Erec

16
E [mJ]

12

0
0 25 50 75 100 125 150
IC [A]

Schaltverluste (typisch) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)

Switching losses (typical) VGE=15V , I C = 75A , VCE = 600V , T j = 125°C

30

Eoff
25 Eon
Erec

20
E [mJ]

15

10

0
0 10 20 30 40 50 60

Ω]
RG [Ω

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Transienter Wärmewiderstand ZthJC = f (t)

Transient thermal impedance
1

0,1
[K / W]
ZthJC

0,01 Zth:Diode
Zth:IGBT

0,001
0,001 0,01 0,1 1 10 100

t [sec]

i 1 2 3 4
ri [K/kW] : IGBT 20,13 60,93 79,4 19,54
τi [sec] : IGBT 0,002 0,03 0,066 1,655
ri [K/kW] : Diode 65,43 173,31 189,08 72,18
τi [sec] : Diode 0,002 0,03 0,072 0,682

Sicherer Arbeitsbereich (RBSOA)

Reverse bias safe operation area (RBSOA) VGE = 15V, R g = 10 Ohm, T vj= 125°C

175

150

125
IC [A]

100 IC,Modul
IC,Chip

75

50

25

0
0 200 400 600 800 1000 1200 1400

VCE [V]

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