0% found this document useful (0 votes)
37 views

Dual High Output Current, High Speed Amplifier: Load

The document provides information about the AD8017 dual high output current, high speed amplifier. It details the amplifier's key features such as high output drive capability, low power operation, low distortion, and high speed. Application areas mentioned include xDSL PCI cards, consumer DSL modems, and video distribution.

Uploaded by

amd ree
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
37 views

Dual High Output Current, High Speed Amplifier: Load

The document provides information about the AD8017 dual high output current, high speed amplifier. It details the amplifier's key features such as high output drive capability, low power operation, low distortion, and high speed. Application areas mentioned include xDSL PCI cards, consumer DSL modems, and video distribution.

Uploaded by

amd ree
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 5

a Dual High Output Current,

High Speed Amplifier


AD8017
FEATURES PIN CONFIGURATION
High Output Drive Capability 8-Lead Thermal Coastline SOIC (SO-8)
20 V p-p Differential Output Voltage, RL = 50 ⍀
10 V p-p Single-Ended Output Voltage While AD8017
Delivering 200 mA to a 25 ⍀ Load OUT1 1 8 +VS

Low Power Operation –IN1 2 – 7 OUT2


+
5 V to 12 V Voltage Supply @ 7 mA/Amplifier +IN1 3 – 6 –IN2
Low Distortion –VS 4 + 5 +IN2
–78 dBc @ 500 kHz SFDR, RL = 100 ⍀, VO = 2 V p-p
–58 dBc Highest Harmonic @ 1 MHz, IO = 270 mA
(RL = 10 ⍀)
High Speed
160 MHz, –3 dB Bandwidth (G = +2)
1600 V/␮s Slew Rate
APPLICATIONS
xDSL PCI Cards
Consumer DSL Modems
Line Driver 12
Video Distribution
VS = ⴞ6V
10
OUTPUT VOLTAGE SWING – V p-p

6
PRODUCT DESCRIPTION
The AD8017 is a low cost, dual high speed amplifier capable of 4
driving low distortion signals to within 1.0 V of the supply rail.
VS = ⴞ2.5V
It is intended for use in single supply xDSL systems where low 2
distortion and low cost are essential. The amplifiers will be able
to drive a minimum of 200 mA of output current per amplifier.
0
The AD8017 will deliver –78 dBc of SFDR at 500 kHz, required 1 10 100 1000
for many xDSL applications. LOAD RESISTANCE – ⍀

Fabricated in ADI’s high speed XFCB process, the high bandwidth Figure 1. Output Swing vs. Load Resistance
and fast slew rate of the AD8017 keep distortion to a minimum, while
dissipating a minimum amount of power. The quiescent current of
the AD8017 is 7 mA/amplifier. +VS

Low distortion, high output voltage drive, and high output current + R1
+
drive make the AD8017 ideal for use in low cost Customer Premise
End (CPE) equipment for ADSL, SDSL, VDSL and proprietary
RL = 100⍀
xDSL systems. VIN VREF
LINE
VOUT POWER
OR
135⍀ IN dB
The AD8017 drive capability comes in a very compact form.
Utilizing ADI’s proprietary Thermal Coastline SOIC package, R2

the AD8017’s total (static and dynamic) power on 12 V supplies – NP:NS
is easily dissipated without external heat sink, other than to place –VS
TRANSFORMER

the AD8017 on a 4-layer PCB.


The AD8017 will operate over the commercial temperature Figure 2. Differential Drive Circuit for xDSL Applications
range –40°C to +85°C.

Information furnished by Analog Devices is believed to be accurate and


reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. © Analog Devices, Inc., 2002
AD8017–SPECIFICATIONS (@ 25ⴗC, V = ⴞ6 V, R = 100 ⍀, R = R = 619 ⍀, unless otherwise noted.)
S L F G

Parameter Conditions Min Typ Max Unit


DYNAMIC PERFORMANCE
–3 dB Bandwidth G = +2, VOUT < 0.4 V p-p 100 160 MHz
0.1 dB Bandwidth VOUT < 0.4 V p-p 70 MHz
Large Signal Bandwidth VOUT = 4 V p-p 105 MHz
Slew Rate Noninverting, VOUT = 4 V p-p, G = +2 1600 V/µs
Rise and Fall Time Noninverting, VOUT = 2 V p-p 2.0 ns
Settling Time 0.1%, VOUT = 4 V Step 35 ns
Overload Recovery VIN = 5 V p-p 74 ns
NOISE/HARMONIC PERFORMANCE
Distortion VOUT = 2 V p-p
Second Harmonic 500 kHz, RL = 100 Ω/25 Ω –78/–71 dBc
1 MHz, RL = 100 Ω/25 Ω –76/–69 dBc
Third Harmonic 500 kHz, RL = 100 Ω/25 Ω –105/–91 dBc
1 MHz, RL = 100 Ω/25 Ω –81/–72 dBc
IP3 500 kHz, RL = 100 Ω/25 Ω 40/35 dBm
IMD 500 kHz, RL = 100 Ω/25 Ω –76/–66 dBc
MTPR 26 kHz to 1.1 MHz –66 dBc
Input Noise Voltage f = 10 kHz 1.9 nV/√Hz
Input Noise Current f = 10 kHz (+ Inputs) 23 pA/√Hz
f = 10 kHz (– Inputs) 21 pA/√Hz
Crosstalk f = 5 MHz, G = +2 –66 dB
DC PERFORMANCE
Input Offset Voltage 1.8 3.0 mV
TMIN to TMAX 4.0 mV
Open Loop Transimpedance VOUT = 2 V p-p 185 700 kΩ
TMIN to TMAX 143 kΩ
INPUT CHARACTERISTICS
Input Resistance +Input 50 kΩ
Input Capacitance +Input 2.4 pF
Input Bias Current (+) 16 ± 45 µA
TMIN to TMAX ± 67 µA
Input Bias Current (–) 1.0 ± 25 µA
TMIN to TMAX ± 32 µA
CMRR VCM = ± 2.5 V 59 63 dB
Input CM Voltage Range ± 5.1 V
OUTPUT CHARACTERISTICS
Output Resistance 0.2 Ω
Output Voltage Swing RL = 25 Ω ± 4.6 ± 5.0 V
Output Current1 Highest Harmonic < –58 dBc, 200 270 mA
f = 1 MHz, RL = 10 Ω
TMIN to TMAX, Highest Harmonic < –52 dBc 100 mA
Short-Circuit Current 1500 mA
POWER SUPPLY
Supply Current/Amp 7.0 7.7 mA
TMIN to TMAX 7.8 mA
Operating Range Dual Supply ± 2.2 ± 6.0 V
Power Supply Rejection Ratio 58 61 dB
Operating Temperature Range –40 +85 °C
NOTE
1
Output current is defined here as the highest current load delivered by the output of each amplifier into a specified resistive load ( RL = 10 Ω), while maintaining an
acceptable distortion level (i.e., less than –60 dBc highest harmonic) at a given frequency (f = 1 MHz).
Specifications subject to change without notice.

–2–
AD8017
SPECIFICATIONS (@ 25ⴗC, V = ⴞ2.5 V, R = 100 ⍀, R = R = 619 ⍀, unless otherwise noted.)
S L F G

Parameter Conditions Min Typ Max Unit


DYNAMIC PERFORMANCE
–3 dB Bandwidth G = +2, VOUT < 0.4 V p-p 75 120 MHz
0.1 dB Bandwidth VOUT < 0.4 V p-p 40 MHz
Large Signal Bandwidth VOUT = 4 V p-p 100 MHz
Slew Rate Noninverting, VOUT = 2 V p-p, G = +2 800 V/µs
Rise and Fall Time Noninverting, VOUT = 2 V p-p 2.2 ns
Settling Time 0.1%, VOUT = 2 V Step 35 ns
Overload Recovery VIN = 2.5 V p-p 74 ns
NOISE/HARMONIC PERFORMANCE
Distortion VOUT = 2 V p-p
Second Harmonic 500 kHz, RL = 100 Ω/25 Ω –75/–68 dBc
1 MHz, RL = 100 Ω/25 Ω –73/–66 dBc
Third Harmonic 500 kHz, RL = 100 Ω/25 Ω –91/–88 dBc
1 MHz, RL = 100 Ω/25 Ω –79/–74 dBc
IP3 500 kHz, RL = 100 Ω/25 Ω 40/36 dBm
IMD 500 kHz, RL = 100 Ω/25 Ω –78/–64 dBc
MTPR 26 kHz to 1.1 MHz –66 dBc
Input Noise Voltage f = 10 kHz 1.8 nV/√Hz
Input Noise Current f = 10 kHz (+ Inputs) 23 pA/√Hz
f = 10 kHz (– Inputs) 21 pA/√Hz
Crosstalk f = 5 MHz, G = +2 –66 dB
DC PERFORMANCE
Input Offset Voltage 0.8 2.0 mV
TMIN to TMAX 2.6 mV
Open Loop Transimpedance VOUT = 2 V p-p 40 166 kΩ
TMIN to TMAX 45 kΩ
INPUT CHARACTERISTICS
Input Resistance +Input 50 kΩ
Input Capacitance +Input 2.4 pF
Input Bias Current (+) 16 ± 40 µA
TMIN to TMAX ± 62 µA
Input Bias Current (–) 2 ± 25 µA
TMIN to TMAX ± 32 µA
CMRR VCM = ± 1.0 (± 1.0) 57 60 dB
Input CM Voltage Range ± 1.6 V
OUTPUT CHARACTERISTICS
Output Resistance 0.2 Ω
Output Voltage Swing RL = 25 Ω ± 1.55 ± 1.65 V
Output Current1 Highest Harmonic < –55 dBc, 100 120 mA
f = 1 MHz, RL = 10 Ω
TMIN to TMAX Highest Harmonic < 50 dBc 60 mA
Short-Circuit Current 1300 mA
POWER SUPPLY
Supply Current/Amp 6.2 7 mA
TMIN to TMAX 7.3 mA
Operating Range Dual Supply ± 2.2 ± 6.0 V
Power Supply Rejection Ratio 59 62 dB
Operating Temperature Range –40 +85 °C
NOTE
1
Output current is defined here as the highest current load delivered by the output of each amplifier into a specified resistive load ( RL = 10 Ω), while maintaining an
acceptable distortion level (i.e., less than –60 dBc highest harmonic) at a given frequency (f = 1 MHz).
Specifications subject to change without notice.

–3–
AD8017
ABSOLUTE MAXIMUM RATINGS 1 The output stage of the AD8017 is designed for maximum load
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.2 V current capability. As a result, shorting the output to common
Internal Power Dissipation2 can cause the AD8017 to source or sink 500 mA. To ensure
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . . . 1.3 W proper operation, it is necessary to observe the maximum power
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ± VS derating curves. Direct connection of the output to either power
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ± 2.5 V supply rail can destroy the device.
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves 2.0
Storage Temperature Range . . . . . . . . . . . . –65°C to +125°C

MAXIMUM POWER DISSIPATION – Watts


Operating Temperature Range . . . . . . . . . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C 1.5
NOTES
1 TJ = 150ⴗC
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational 1.0
section of this specification is not implied. Exposure to absolute maximum rating TJ = 125ⴗC
conditions for extended periods may affect device reliability.
2
Specification is for device on a two-layer board with 2500 mm 2 of 2 oz. copper at
+25°C 8-lead SOIC package: θJA = 95.0°C/W. 0.5

MAXIMUM POWER DISSIPATION


The maximum power that can be safely dissipated by the AD8017 0
0 10 20 30 40 50 60 70 80 90
is limited by the associated rise in junction temperature. The AMBIENT TEMPERATURE – ⴗC
maximum safe junction temperature for plastic encapsulated
device is determined by the glass transition temperature of the Figure 3. Plot of Maximum Power Dissipation vs.
plastic, approximately 150°C. Temporarily exceeding this limit Temperature for AD8017
may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package. Exceeding a junc-
tion temperature of 175°C for an extended period can result in
device failure.
ORDERING GUIDE

Model Temperature Range Package Description Package Option


AD8017AR –40°C to +85°C 8-Lead SOIC SO-8
AD8017AR-REEL –40°C to +85°C Tape and Reel 13" SO-8
AD8017AR-REEL7 –40°C to +85°C Tape and Reel 7" SO-8
AD8017AR-EVAL Evaluation Board

619⍀ 619⍀ 619⍀ 619⍀


VOUT VIN VOUT
RL RL
54.4⍀

VIN
+VS +VS
49.9⍀ +
0.1␮F 10␮F +
0.1␮F 10␮F
+ +
0.1␮F 10␮F 0.1␮F 10␮F
–VS –VS

Figure 4. Test Circuit: Gain = +2 Figure 5. Test Circuit: Gain = –1

CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. WARNING!
Although the AD8017 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
ESD SENSITIVE DEVICE
precautions are recommended to avoid performance degradation or loss of functionality.

–4–
AD8017

Figure 11. Universal SOIC Noninverter Top Figure 12. Universal SOIC Noninverter Bottom

OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).

8-Lead SOIC
(R-8)

0.1968 (5.00)
0.1890 (4.80)

8 5
0.1574 (4.00) 0.2440 (6.20)
0.1497 (3.80) 1 4 0.2284 (5.80)

PIN 1 0.0688 (1.75) 0.0196 (0.50)


x 45
0.0098 (0.25) 0.0532 (1.35) 0.0099 (0.25)
0.0040 (0.10)

8
0.0500 0.0192 (0.49) 0
SEATING (1.27) 0.0098 (0.25) 0.0500 (1.27)
PLANE BSC 0.0138 (0.35) 0.0075 (0.19) 0.0160 (0.41)

–15–

You might also like