Scribd
Upload
325 views5 pages

2.draw Input and Output Characteristics of A Bipolar Transistor

This document provides instructions for drawing the input and output characteristics of a transistor connected in common emitter (CE) configuration. The input characteristics are obtained by plotting the base current (IB) versus base-emitter voltage (VBE) for constant collector-emitter voltages (VCE). The output characteristics are obtained by plotting the collector current (IC) versus VCE for constant IB. The experiment will yield the input and output graphs along with observations and precautions when conducting the characterization.

Uploaded by

Qweerrtt
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
325 views5 pages

2.draw Input and Output Characteristics of A Bipolar Transistor

This document provides instructions for drawing the input and output characteristics of a transistor connected in common emitter (CE) configuration. The input characteristics are obtained by plotting the base current (IB) versus base-emitter voltage (VBE) for constant collector-emitter voltages (VCE). The output characteristics are obtained by plotting the collector current (IC) versus VCE for constant IB. The experiment will yield the input and output graphs along with observations and precautions when conducting the characterization.

Uploaded by

Qweerrtt
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 5

Electronics Laboratory

TRANSISTOR CE CHARACTERSTICS
AIM: To draw the input and output characteristics of transistor connected in CE configuration

APPARATUS:

Transistor (SL100 or BC107)

R.P.S (O-30V) 2Nos

Voltmeters (0-20V) 2Nos

Ammeters (0-200mA)

Resistors 100Kohm, 100ohm

Bread board and connecting wires

THEORY:

A transistor is a three terminal device. The terminals are emitter, base, collector. In
common emitter configuration, input voltage is applied between base and emitter terminals
and out put is taken across the collector and emitter terminals.

Therefore the emitter terminal is common to both input and output.

The input characteristics resemble that of a forward biased diode curve. This is
expected since the Base-Emitter junction of the transistor is forward biased. As compared to
CB arrangement IB increases less rapidly with VBE . Therefore input resistance of CE circuit is
higher than that of CB circuit.

The output characteristics are drawn between Ic and VCE at constant IB. the collector
current varies with VCE unto few volts only. After this the collector current becomes almost
constant, and independent of VCE. The value of VCE up to which the collector current changes
with V CE is known as Knee voltage. The transistor always operated in the region above Knee
voltage, IC is always constant and is approximately equal to I B.

The current amplification factor of CE configuration is given by

Β = ∆IC/∆IB

Department of Physics, IIT Roorkee 1


Electronics Laboratory

CIRCUIT DIAGRAM:

PROCEDURE:

INPUT CHARECTERSTICS:

1. Connect the circuit as per the circuit diagram.


2. For plotting the input characteristics the output voltage VCE is kept constant at 1V and
for different values of VBE . Note down the values of IC
3. Repeat the above step by keeping VCE at 2V and 4V.
4. Tabulate all the readings.
5. plot the graph between VBE and IB for constant VCE

OUTPUT CHARACTERSTICS:

1. Connect the circuit as per the circuit diagram


2. for plotting the output characteristics the input current I B is kept constant at 10µA and
for different values of VCE note down the values of IC
3. repeat the above step by keeping IB at 75 µA 100 µA
Electronics Laboratory

4. tabulate the all the readings


5. plot the graph between VCE and IC for constant IB

OBSERVATIONS:

INPUT CHARACTERISTICS:

VCE = 1V VCE = 2V VCE = 4V


S.NO
VBE(V) IB(µA) VBE(V) IB(µA) VBE(V) IB(µA)

OUT PUT CHAREACTARISTICS:

IB = 50 µA IB = 75 µA IB = 100 µA
S.NO
VCE(V) IC(mA) VCE(V) ICmA) VCE(V) IC(mA)
Electronics Laboratory

MODEL GRAPHS:

INPUT CHARACTERSTICS:

OUTPUT CHARECTERSTICS:
Electronics Laboratory

PRECAUTIONS:

1. The supply voltage should not exceed the rating of the transistor

2. Meters should be connected properly according to their polarities

VIVA QUESTIONS:

1. What is the range of  for the transistor?


2. What are the input and output impedances of CE configuration?
3. Identify various regions in the output characteristics?
4. what is the relation between  and 
5. Define current gain in CE configuration?
6. Why CE configuration is preferred for amplification?
7. What is the phase relation between input and output?
8. Draw diagram of CE configuration for PNP transistor?
9. What is the power gain of CE configuration?
10. What are the applications of CE configuration?

You might also like