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Strobe Flash Applications: Maximum Ratings

This document provides information on the GT15G101 insulated gate bipolar transistor (IGBT) from Toshiba. Key features include high input impedance, low saturation voltage of 8V maximum, and enhancement mode operation with a 20V gate drive. Maximum ratings include a 400V collector-emitter voltage, 170A collector current, 2W power dissipation, and 150°C junction temperature. Electrical characteristics include gate leakage current, collector cut-off current, gate-emitter cut-off voltage, collector-emitter saturation voltage, input capacitance, and switching times. Restrictions on use warn that the device is intended for general electronics and not for applications requiring high reliability or where failure could risk life

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19 views5 pages

Strobe Flash Applications: Maximum Ratings

This document provides information on the GT15G101 insulated gate bipolar transistor (IGBT) from Toshiba. Key features include high input impedance, low saturation voltage of 8V maximum, and enhancement mode operation with a 20V gate drive. Maximum ratings include a 400V collector-emitter voltage, 170A collector current, 2W power dissipation, and 150°C junction temperature. Electrical characteristics include gate leakage current, collector cut-off current, gate-emitter cut-off voltage, collector-emitter saturation voltage, input capacitance, and switching times. Restrictions on use warn that the device is intended for general electronics and not for applications requiring high reliability or where failure could risk life

Uploaded by

albert
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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GT15G101

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT

GT15G101
Unit: mm
STROBE FLASH APPLICATIONS

l High Input Impedance


l Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A)
l Enhancement−Mode
l 20V Gate Drive

MAXIMUM RATINGS (Ta = 25°C)

CHARACTERISTIC SYMBOL RATING UNIT

Collector−Emitter Voltage VCES 400 V


Gate−Emitter Voltage VGES ±25 V
DC IC 15
Collector Current A
1ms ICP 170

Collector Power Ta = 25°C PC 2.0


W
Dissipation Tc = 25°C PC 40 JEDEC ―
Junction Temperature Tj 150 °C JEITA ―
Storage Temperature Range Tstg −55~150 °C TOSHIBA 2−10R1C
Weight: 1.7g
Screw Torque ― 0.6 N·m

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT

Gate Leakage Current IGES VGE = ±25V, VCE = 0 ― ― ±100 nA


Collector Cut−off Current ICES VCE = 400V, VGE = 0 ― ― 10 µA
Gate-Emitter Cut−off Voltage VGE (OFF) IC = 1mA, VCE = 5V 4 5 7 V
Collector−Emitter Saturation Voltage VCE (sat) IC = 170A, VGE = 20V (Pulsed) ― 5 8 V
Input Capacitance Cies VCE = 10V, VGE = 0, f = 1MHz ― 2000 ― pF
Rise Time tr ― 0.1 0.5
Turn−on Time ton ― 0.15 0.5
Switching Time µs
Fall Time tf ― 4.0 6.0
Turn-off Time toff ― 4.5 7.0
Thermal Resistance Rth (j−c) ― ― ― 3.12 °C / W

1 2001-06-06
GT15G101

2 2001-06-06
GT15G101

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GT15G101

RESTRICTIONS ON PRODUCT USE 000707EAA

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

4 2001-06-06
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

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