0% found this document useful (0 votes)
168 views

Phy2004 - Solar Cell

The document summarizes the basics of solar cells: 1) Solar cells convert sunlight into electricity by generating electron-hole pairs when photons with energy greater than or equal to the semiconductor's bandgap collide with electrons. 2) The intensity of incident light decreases exponentially with distance in the semiconductor, depending on the absorption coefficient. 3) One electrode in a solar cell must be transparent so that light can reach the light-absorbing layer to generate electron-hole pairs.

Uploaded by

Radha Viswanath
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
168 views

Phy2004 - Solar Cell

The document summarizes the basics of solar cells: 1) Solar cells convert sunlight into electricity by generating electron-hole pairs when photons with energy greater than or equal to the semiconductor's bandgap collide with electrons. 2) The intensity of incident light decreases exponentially with distance in the semiconductor, depending on the absorption coefficient. 3) One electrode in a solar cell must be transparent so that light can reach the light-absorbing layer to generate electron-hole pairs.

Uploaded by

Radha Viswanath
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 20

Solar Cells

Basics
• Solar cells convert optical energy into electrical energy
• When a photon of enough energy collides with a valence electron, electron excites to
the conduction band leaving a hole behind.
• Such a process generates electron–hole pairs and creates excess carrier
concentrations.

• When a semiconductor is illuminated with light, the photons may be absorbed or they
may propagate through the semiconductor, depending on the photon energy and on
the bandgap energy Eg.

Optically generated electron–hole pair formation in a


semiconductor when hν≥Eg.
The intensity of the incident photon flux decreases exponentially with distance
through the semiconductor material.
Io X, alpha 1 I1

where Iνo is the intensity of incident radiation, α is the absorption coefficient and x is
the distance travelled by the light inside the semiconductor.

Y,
alpha I1
Io
2

Photon intensity versus distance for


two absorption coefficients.

The absorption coefficient in the semiconductor is a very strong function of photon


energy and bandgap energy
One electrode must be transparent in a solar cell so that incident light can reach
the light absorbing layer for the generation of electron hole pairs

Top Transparent Electrode

Light absorbing material


Bottom electrode
(opaque/Transparent)
Numerical Problem

1. Consider silicon semiconductor. The absorption coefficient of Silicon is 102 cm-1 ,


assume that incident light of wavelength is 1.0 µm. Calculate the thickness of a
semiconductor that will absorb 90 percent of the incident photon energy.

2. Repeat the above problem with the incident light of wavelength is 0.5 µm.

3. Consider a slab of silicon 5 µm thick. Determine the percentage of photon energy


that will pass through the slab if the photon wavelength is (a) 0.8 µm and (b) 0.6
µm.

X=?, alpha 1 I1
Numerical Problem

Absorption coefficient as a function of wavelength for several semiconductors is shown in the


figure.

Ge 360-720
nm
Si 360-720
nm
GaP 0.42-0.6
micromet
er
GaAS
a-Si

List the materials suitable for (i) absorbing visible light and (ii) transparent for visible light
Carrier Generation Rate:

If we assume that one absorbed photon at an energy h creates one electron–hole


pair, then the generation rate of electron–hole pairs is

Excess carrier concentration

If the incident photon intensity is a steady-state intensity, then, the steady state is

δn=g'

where is the excess minority carrier lifetime.


Numerical Problem

Consider gallium arsenide at T 300 K, Assume the photon intensity at a


particular point is I(x)= 0.05 W/cm2 at a wavelength of 0.75 m. The absorption
coefficient at this wavelength is 0.9x104 cm-1 . Calculate the generation rate of
electron hole pairs.

Calculate the steady state excess concentration of electrons if the minority


carrier (hole) life time is 10-7 sec.
pn Junction Solar Cell
pn Junction Solar Cell
VOC

The photocurrent is always in the reverse-biased direction


I–V characteristics of a pn junction solar cell

Short Circuit Current (Isc)

Open Circuit Voltage (Voc)


Numerical Problem

Calculate the open-circuit voltage of a silicon pn junction solar cell at T 300 K with the
following parameters:

X=0
𝐽𝐿
𝑉𝑂𝐶 = 𝑉𝑡 𝑙𝑛 1 + P n
𝐽𝑆
Ppo =Na nno =Nd
npo = ni2 /Na pno= ni2 /Nd
Conversion Efficiency of a solar cell

The conversion efficiency of a solar cell is defined as the ratio of


output electrical power to incident optical power.

The ratio ImVm/IscVoc is called the fill factor and is a measure of the
realizable power from a solar cell.

FF= ImVm/IscVoc
Numerical Problem

What is the short-circuit current delivered by a10 cm by 10 cm photocell (with


100% quantum efficiency) by monochromatic light of 400 nm wavelength with a
power density of 1000 W/m2.

Power density,

here, φ photon flux (# of photons per second per m2 ) and Wph is photon energy

I= (φ)(Area)(Charge of electron)
Numerical Problems

A silicon diode having 100% quantum efficiency is exposed to radiation at 300K.


the reverse saturation current density, J0, of the diode is 40 µA/m2 and short
circuit current density is 604 A/m2. What is the open-circuit voltage generated by
the diode?

𝐽𝐿
𝑉𝑂𝐶 = 𝑉𝑡 𝑙𝑛 1 +
𝐽𝑆

Under different illumination, a solar cell delivers 5 A into a short circuit. The
reverse saturation current is 100 pA. Disregard any internal resistance of
the photodiode. What is the open-circuit voltage at 300 K

𝐼𝐿
𝑉𝑂𝐶 = 𝑉𝑡 𝑙𝑛 1 +
𝐼𝑆
Numerical Problem

Consider a solar cell shown in figure. Which of the following region


is coated with a metal
Which of the following should not be the characteristic of the solar cell
material?

a) High Absorption
b) High Conductivity
c) High Energy Band
d) High Availability

You might also like