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EX - NO.: Characteristics of PN Junction Diode and Zener Diode Date

The document describes experiments to characterize PN junction diodes and Zener diodes. It explains how to measure the forward and reverse bias characteristics of a PN junction diode to determine the cut-in voltage and resistances. It also describes how to measure the forward and reverse bias characteristics of a Zener diode to determine the cut-in voltage and breakdown voltage. The procedures involve connecting the diodes in forward and reverse bias configurations and recording the current and voltage values to plot the voltage-current characteristics and extract the key parameters from the graphs.

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102 views

EX - NO.: Characteristics of PN Junction Diode and Zener Diode Date

The document describes experiments to characterize PN junction diodes and Zener diodes. It explains how to measure the forward and reverse bias characteristics of a PN junction diode to determine the cut-in voltage and resistances. It also describes how to measure the forward and reverse bias characteristics of a Zener diode to determine the cut-in voltage and breakdown voltage. The procedures involve connecting the diodes in forward and reverse bias configurations and recording the current and voltage values to plot the voltage-current characteristics and extract the key parameters from the graphs.

Uploaded by

pinky white
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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EX.NO.:  Characteristics of PN Junction Diode and Zener Diode 
 
DATE: 
 
 
 
 1. To plot Volt-Ampere Characteristics of Silicon P-N Junction Diode.  
            2. To find cut-in Voltage for Silicon P-N Junction diode.  
            3. To find static and dynamic resistances in both forward and reverse   
                biased conditions for P-N Junction diode.  
            4. To plot Volt-Ampere characteristics of Zener diode.  
            5. To find Zener break down voltage in reverse biased condition.  
APPARATUS REQUIRED: 
 
S.No.  Apparatus  Type  Range  Quantity 

    1.  PN Junction  Diode IN4001    1 


2.  Zener Diode   IZ 6.2    1 
3.  Resistance       
4.  Ammeter    (0-30)mA,  1 
(0-500)μA 
5.  Voltmeter    (0 – 1)V,  1 
(0 – 30)V 
6.  Bread Board      1 
7.  Wires       
8.  DMM    -   
 
 
Introduction: 
 
                   Donor impurities (pentavalent) are introduced into one-side and
acceptor impurities into the other side of a single crystal of an intrinsic
semiconductor to form a p-n diode with a junction called depletion region (this
region is depleted off the charge carriers). This region gives rise to a potential
barrier Vγ called Cut- in Voltage. This is the voltage across the diode at
which it starts conducting. The P-N junction can conduct beyond this
Potential.  
 
                   The P-N junction supports uni-directional current flow. If
+ve terminal of the input supply is connected to anode (P-side) and –
ve terminal of the input supply is connected to cathode (N- side), then diode is
said to be forward biased. In this condition the height of the potential barrier at
the junction is lowered by an amount equal to given forward biasing voltage.
Both the holes from p-side and electrons from n-side cross the junction
simultaneously and constitute a forward current (injected minority current –
due to holes crossing the junction and entering N-side of the diode, due to
electrons crossing the junction and entering P-side of the diode). Assuming
current flowing through the diode to be very large, the diode can
be approximated as short-circuited switch. If –ve terminal of the input supply is
connected to anode (p-side) and +ve terminal of the input supply is connected
to cathode (n-side) then the diode is said to be reverse biased. In this
condition an amount equal to reverse biasing voltage increases the height of
the potential barrier at the junction. Both the holes on p-side and electrons on
n-side tend to move away from the junction thereby increasing the depleted
region. However the process cannot continue indefinitely, thus a small current
called reverse saturation current continues to flow in the diode. This small
current is due to thermally generated carriers. Assuming current flowing
through the diode to be negligible, the diode can be approximated as an open
circuited switch. 
The volt-ampere characteristics of a diode explained by following equation: 
                                                 I = Io(Exp(V/ ηVT)-1)    where, 
I=current flowing in the diode, Io=reverse saturation current 
V=voltage applied to the diode,  
VT=volt-equivalent of temperature=kT/q=T/11,600=26mV(at room temp). 
η=1 (for Ge) and 2 (for Si) 
 
                             It is observed that Ge diode has smaller cut-in-voltage when
compared to Si diode. The reverse saturation current in Ge diode is larger in
magnitude when compared to silicon diode. 
 
 
Circuit diagram: 
Forward Bias 
 
 
Reverse Bias 
 
 
 
 
 
Procedure: 
 
Forward Biased Condition: 
1. Connect the PN Junction diode in forward bias i.e Anode is connected to 
    positive of the power supply and cathode is connected to negative of the 
    power supply . 
2. Use a Regulated power supply of range (0-30)V and a series resistance of 
    1kΏ. 
3. For various values of forward voltage (Vf) note down the corresponding 
    values of forward current(If). 
 
Reverse biased condition: 
1. Connect the PN Junction diode in Reverse bias i.e; anode is connected to 
    negative of the power supply and cathode is connected to positive of the 
    power supply. 
2. For various values of reverse voltage (Vr ) note down the
corresponding         
    values of reverse current ( Ir ). 
 
Tabular column: 
 Forward Bias: 
S. No  V f (volts)  I f (mA) 
     

Page BreakReverseBias: 
S. No  V r (volts)  I r (μA) 
     

 
 
 
Graph: 
                              
 
 
 
 
 
 
 
 
Graph (instructions) 
1. Take a graph sheet and divide it into 4 equal parts. Mark origin at the center
of   
    the graph sheet. 
2. Now mark +ve x-axis as Vf, -ve x-axis as Vr , +ve y-axis as If , -ve y-axis as
Ir. 
3. Mark the readings tabulated for diode forward biased condition in
first quadrant 
   and diode reverse biased condition in third Quadrant. 
 
Calculations from Graph: 
 
Static forward Resistance Rdc = Vf /If Ω 
 
Dynamic forward Resistance rac = ΔVf/ΔIf Ω 
 
Static Reverse Resistance Rdc =Vr/Ir Ω 
 
Dynamic Reverse Resistance rac = ΔVr/ΔIr Ω 
 
 
 
Introduction: 
An ideal P-N Junction diode does not conduct in reverse biased condition. A 
zener diode conducts excellently even in reverse biased condition. These
diodes 
operate at a precise value of voltage called break down voltage.
A zener diode when forward biased behaves like an ordinary P-N junction
diode. A zener diode when reverse biased can either undergo avalanche
break down or zener break down. Avalanche break down:-If both p-side
and n-side of the diode are lightly doped, depletion region at the junction
widens. Application of a very large electric field at the junction may rupture
covalent bonding between electrons. Such rupture leads to the generation of a
large number of charge carriers resulting in avalanche multiplication. Zener
break down:-If both p-side and n-side of the diode are heavily
doped, depletion region at the junction reduces. Application of even a small
voltage at the junction ruptures covalent bonding and generates large number
of charge carriers. Such sudden increase in the number of charge carriers
results in zener mechanism. 
Circuit diagram: 
Forward Bias 
 
Reverse Bias 
 
 
Procedure: 
 
Forward Biased Condition: 
1. Connect the Zener diode in forward bias i.e; anode is connected to positive
of   
    the power supply and cathode is connected to negative of the power supply
as   
    in circuit.  
2. Use a Regulated power supply of range (0-30)V and a series resistance
of   
   1kΏ. 
3. For various values of forward voltage (Vf) note down the corresponding
values   
    of forward current(If). 
 
Reverse Biased condition: 
1. Connect the Zener diode in Reverse bias i.e; anode is connected to
negative   
    of the power supply and cathode is connected to positive of the power
supply   
    as in circuit. 
2. For various values of reverse voltage (Vr) note down the corresponding
values   
   of reverse current (Ir). 
 
Tabular column: 
Forward Bias: 
S. No  V f (volts)  I f (mA) 
     

 
 
Reverse Bias: 
S. No  V r (volts)  I r (mA) 
     

 
 
Model Graph: 
 
 
Calculations from Graph: 
 
Cut in voltage = ---------- (v) 
 
Break down voltage = ------------(v) 
 
 
 
 
 
 
 
 
 
 
 
Result: 
Thus the VI characteristics of PN junction diode and zener diode have been
plotted. 
 
PN Diode: 
1. Cut in voltage = ……… V 
2. Static forward resistance = ………. Ω 
3. Dynamic forward resistance = ………. Ω 
 zener diode:  
1. Cut in voltage = ……… V 
2 Break down voltage = ------------(v) 
 
 

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