Unit 4: Solid state Physics

MCQ Question Bank

Q.
Question Answer
No
1 When a P-type and N-type semiconductors are joined together to form a PN junction, A
what happens to the Fermi energy levels

(a) Fermi energy level decreases for N-type while increases for P-type until
equilibrium is obtained
(b) Fermi energy level increases for N-type while decreases for P-type until
equilibrium is obtained
(c) Fermi energy level remains constant but the distribution of holes and electrons
changes
(d) Fermi energy level remains unchanged and equilibrium is obtained
2 What happens to the Fermi energy level if a forward bias is applied to a PN junction B
diode?

(a) Fermi energy level decreases for N-type while increases for P-type
(b) Fermi energy level increases for N-type while decreases for P-type
(c) Fermi energy levels remains in equilibrium in both regions to allow current to
flow
(d) Fermi energy levels increases for both the regions
3 What happens to the Fermi energy level if a reverse bias is applied to a PN junction A
diode?

(a) Fermi energy level decreases for N-type while increases for P-type
(b) Fermi energy level increases for N-type while decreases for P-type
(c) Fermi energy levels remains in equilibrium in both regions to allow current to
flow
(d) Fermi energy levels increases for both the regions
4 When a P-type and N-type semiconductors are joined to form a PN junction C

(a) The electrons are transferred from P-region to N-region and Fermi energy
level of both regions decreases
(b) The electrons are transferred from P-region to N-region and Fermi energy
level of both regions increases
(c) The electrons are transferred from N-region to P-region and Fermi energy
level both regions attains equilibrium
(d) The electrons are transferred from N-region to P-region and Fermi energy
level of both regions increases
5 In equilibrium state of a PN junction diode D

(a) Fermi energy level of P-region is higher than that of N-region

(b) Fermi energy level of N-region is lower than that of P-region
(c) Fermi energy levels of both the regions are at minimum value
(d) Fermi energy levels of both the regions attend thermal equilibrium

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6 In an equilibrium state of an NPN transistor, what is true for Fermi energy levels C

(a) (Fermi energy emitter) > (Fermi energy base) > (Fermi energy collector)
(b) (Fermi energy emitter) < (Fermi energy base) > (Fermi energy collector)
(c) (Fermi energy emitter) = (Fermi energy base) = (Fermi energy collector)
(d) (Fermi energy emitter) > (Fermi energy base) < (Fermi energy collector)
7 For a biased NPN transistor, what is true for Fermi energy levels A

(a) (Fermi energy emitter) > (Fermi energy base) > (Fermi energy collector)
(b) (Fermi energy emitter) < (Fermi energy base) > (Fermi energy collector)
(c) (Fermi energy emitter) = (Fermi energy base) = (Fermi energy collector)
(d) (Fermi energy emitter) > (Fermi energy base) < (Fermi energy collector)
8 Hall effect is true for C

(e) Metals only

(f) Semiconductors only
(g) Both metals and semiconductors
(h) For N-type semiconductors only
9 Hall effect is true for A

(a) Both N-type and P-type semiconductors

(b) N-type Semiconductors only
(c) P-type Semiconductors only
(d) Metals only
10 When current flows along the length of the semiconductor slab and magnetic field C
applied is perpendicular the length to Hall voltage developed is

(a) Along the length

(b) Along the thickness
(c) Along the width
(d) Along the edges from where current enters
11 In Hall effect, if only the direction of the current is changed in the material

(a) The value of Hall voltage developed increases

(b) The value of Hall voltage developed in opposite direction, but its value B
remains constant
(c) The value of Hall voltage developed decreases
(d) The Hall effect do not appear
12 In Hall effect, if only the direction of the magnetic field applied to the material is C
changed

(e) The value of Hall voltage appears

(f) The value of Hall voltage developed decreases
(g) The value of Hall voltage developed in opposite direction, but its value
remains constant
(h) The Hall effect do not appear

13 In Hall effect, if only the direction of the current is changed in the material the Hall A
electric field

(a) Hall electric field is developed in opposite direction

(b) Hall electric field do not change the direction
(c) Hall electric field increases
(d) Hall electric field decreases
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Q.
Question Answer
No
14 If the thickness of the material is reduced, the Hall voltage developed B

(a) Decreases
(b) Increases
(c) Remains constant
(d) Changes the direction
15 If the thickness of the material is increased, the Hall voltage developed A

(a) Decreases
(b) Increases
(c) Remains constant
(d) Changes the direction
16 If the strength of magnetic field is increased, the Hall voltage developed C

(a) Decreases
(b) Remains constant
(c) Increases
(d) Changes the direction
17 If the strength of magnetic field is decreased, the Hall voltage developed A

(a) Decreases
(b) Increases
(c) Remains constant
(d) Changes the direction
18 If the magnitude of current is increased, the Hall voltage developed B

(a) Decreases
(b) Increases
(c) Remains constant
(d) Changes the direction
19 If the magnitude of current is decreased, the Hall voltage developed A

(e) Decreases
(f) Increases
(g) Remains constant
(h) Changes the direction

20 If the density of charge carriers is increased, the value of Hall voltage A

(a) Decreases
(b) Increases
(c) Remains constant
(d) Changes the direction
21 Which of the following statements correctly describes a metal within band theory? C

(a) A material possessing moderate band gap

(b) A material possesses a large band gap
(c) A material with zero band gap
(d) A material with infinite band gap
22 Which is the correct ordering of the band gaps energy?

(a) Diamond > silicon > copper

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 (b) Diamond < silicon < copper A
(c) Diamond < silicon > copper
(d) Diamond < silicon < copper
23 Which statement is true regarding electrical conductivity of materials? B

(a) Electrical conductivity of a metal increases with temperature

(b) Electrical conductivity of a semiconductor increases with temperature
(c) Electrical conductivity of a metal decreases with temperature
(d) Electrical conductivity of a semiconductor decreases with temperature
24 Which statement is incorrect at ordinary room temperature? C

(a) In metals electron can jump from valence band to conduction band easily
(b) In semiconductors few electrons can jump from valence band to conduction
band
(c) In semiconductors is pure insulator at ordinary room temperature
(d) In insulators electrons cannot jump from valence band to conduction band
25 Which statement is incorrect about semiconductors? C

(a) A charge carrier may be either a positive hole or an electron

(b) Ga-doped Si is a p-type semiconductor
(c) n- and p-type semiconductors are intrinsic semiconductors
(d) Doping Si with As introduces a donor level below the conduction band
26 At 0 Kelvin, semiconductors are D

(a) Perfect metals

(b) Perfect semiconductors
(c) Perfect non-metals
(d) Perfect insulator
27 In an intrinsic semiconductors, what is true of the following? A

(a) Concentration of electrons and hole is equal

(b) Concentration of electrons is greater than holes
(c) Concentration of holes is greater than electrons
(d) Concentration of holes and electrons vary by very small amount

28 Solids with high value of conductivity are called: A

(a) Conductors
(b) Non-metal
(c) Insulator
(d) Semi conductor
29 The electrons in valence band are A

(a) Freely moving inside the solid

(b) Tightly bonded inside the solid
(c) Lies in the innermost orbits and cannot be made free
(d) Lies in the outermost orbits and cannot be made free
30 At absolute zero (0 K) conduction band will be B

(a) Fully occupied by electrons

(b) Completely empty
(c) Partially occupied by electrons
(d) Partially occupied by holes
31 Above absolute zero, what is true for metals? C
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 (a) Conduction band is always empty
(b) Valence band is always empty
(c) Conduction band is partially occupied
(d) Valence band is always full
32 For metals conduction band and valence band are D

(a) Fully occupied

(b) Empty
(c) Partially occupied
(d) Overlapping
33 For a metal which is the incorrect statement? D

(a) Electrons are freely moving in the solid and have energy greater than valence
electrons
(b) Electrons can remain simultaneously in conduction band and valence band
(c) Electrons in valence band may have energy equal to conduction band
(d) Electrons in valence band cannot have energy equal to conduction band
34 What is the correct statement for an insulator? B

(a) The band gap energy is very high

(b) The conduction band and valence cannot overlap
(c) The conduction band and valence band may overlap
(d) The conduction band and valence cannot have very little difference of energy
35 Pure silicon at 0 K is an D

(a) Intrinsic semiconductor

(b) Extrinsic semiconductor.
(c) Metal
(d) Insulator
36 The energy required to break a covalent bond in a semiconductor B

(a) is equal to 1 eV
(b) is equal to the width of the forbidden gap
(c) is greater in Ge than in Si
(d) is the same in Ge and Si
37 As electrons in conduction band have high energy, where is their location in solids? C

(a) Always near the top of the crystal

(b) Always at the surface of the crystal
(c) Anywhere in the solid moving freely
(d) Always bound to its parent atom in outermost orbit
38 At 0 K, all the valence electrons in an intrinsic semiconductor A

(a) are in the valence band

(b) are in the forbidden gap
(c) are in the conduction band
(d) are free electrons
39 P-type and N-type extrinsic semiconductors are formed by adding impurities of C
valency?

(a) 5 and 3 respectively.

(b) 5 and 4 respectively.
(c) 3 and 5 respectively.
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 (d) 3 and 4 respectively.
40 In an insulator, the forbidden energy gap is of the order of D

(a) 1 MeV
(b) 0.1 MeV
(c) eV
(d) 5 eV
41 At 0 K temperature, a p-type semiconductor A

(a) Does not have any charge carriers

(b) Has few electrons and few free holes
(c) Has few holes but no electrons
(d) Has equal number of holes and electrons
42 The bond that exists in a semiconductor is B

(a) Ionic bond

(b) Covalent bond
(c) Metallic bond
(d) Hydrogen bond
43 A pure semiconductor behaves slightly as a conductor at C

(a) Only at very high temperatures

(b) Only above room temperature
(c) At any energy above 0 K
(d) Only at room temperature
44 Fermi level for a metal is A

(i) Highest energy level occupied by electrons at 0 0C

(j) Average value of all available energy levels
(k) Highest energy level occupied by electrons at 0 K
(l) Addition of energy of all available electron energy levels
45 Fermi level for an intrinsic semiconductor is D

(a) Highest energy level occupied by electrons at 0 0C

(b) Average value of all available energy levels
(c) Highest energy level occupied by electrons at 0 K
(d) Reference energy level at the centre of the forbidden energy gap
46 What is the position of Fermi level in an n-type semiconductor? B

(a) In between energy levels of conduction band and donor atoms

(b) In between energy levels of donor atoms and Fermi energy levels
(c) In between energy levels of valence band and Fermi level
(d) Close to the valence band
47 The Fermi Function represents the probability of occupation which of the following B
energy level by an electron?

(a) For electrons only at Fermi energy level

(b) For electrons at any energy level
(c) For electrons only above Fermi energy level
(d) For electrons only below Fermi energy level
48 Fermi level represents the energy level with probability of its occupation of C

(a) 0 %
(b) 25 %
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 (c) 50 %
(d) 100 %
49 The probability of occupancy of electrons above Fermi level at T=0°K is A

(a) 0 %
(b) 25%
(c) 50%
(d) 100%
50 The probability of occupancy of electrons below Fermi level at T=0°K is D

(a) 0 %
(b) 25%
(c) 50%
(d) 100%
51 The energy level of a donor atom typically lies very close to B

(a) Just above the conduction band

(b) just below the conduction band
(c) just above the valence band
(d) just below the valence band
52 The energy level of a acceptor atom typically lies very close to C

(a) just above the conduction band

(b) just below the conduction band
(c) just above the valence band
(d) just below the valence band
53 Due to the addition of a donor atom the original Fermi energy level in an intrinsic A
semiconductor

(a) moves toward conduction band

(b) moves toward valence band
(c) remains at the centre of the forbidden energy gap
(d) is not affected
54 Due to the addition of an acceptor atom the original Fermi energy level in an intrinsic B
semiconductor

(a) moves toward conduction band

(b) moves toward valence band
(c) remains at the centre of the forbidden energy gap
(d) is not affected
55 The free electron theory could not explain which of the following properties? C

(a) Electrical and thermal conductivity of metals

(b) Thermal and thermal conductivity of non-metal
(c) Ferromagnetism
(d) Ohm’s law
56 Free electron theory is based on which of the following assumption? B

(a) Electrons are freely moving only at the centre of the solid
(b) Electrons behaves are freely moving through entire the solid
(c) Electrons can move freely only at the top surface of the solid
(d) Electrons can move freely only along the surfaces of the solid

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57 Which statement is correct regarding the influence of temperature on conductivity? B

(a) Conductivity of metals increases with increase in temperature

(b) Conductivity of metals decreases with increase in temperature
(c) Conductivity of semiconductors decreases with increase in temperature
(d) Conductivity of semiconductors do not change with increase in temperature

58 When light incidents on metals what is the effect on its conductivity? A

(a) Conductivity almost remain constant with only little heating

(b) Conductivity increases along with little heating of the material
(c) Conductivity decreases along with little heating of the material
(d) Conductivity decreases as electrons are emitted from the material

59 When light incidents on semiconductors what is the effect on its conductivity? D

(a) Conductivity almost remain constant with little heating

(b) Conductivity is not affected
(c) Conductivity increases as electrons are promoted to conduction band after
absorbing light
(d) Conductivity decreases as electrons absorb photons and move with more random
motion

60 What is the effect of impurity on metals? B

(a) Impurity increases into increase of mobility of electrons

(b) Impurity result into more scattering of electrons and conductivity decreases
(c) Impurity result into more scattering of electrons and conductivity increases
(d) Impurity does not affect the conductivity

61 Density of states function implies C

(a) Number of available energy levels of electrons in unit volume per unit
temperature
(b) Number of available energy levels of electrons in unit volume
(c) Number of available energy levels of electrons in unit volume per unit energy
interval
(d) Number of available electrons of per unit volume of the solid

62 Under the influence of external electric or magnetic field, when an electrons moves C
inside a solid what happens to its mass?

(a) The mass of electron is a constant quantity and it remains constant

(b) The mass of electron increases due to absorption of external energy
(c) The mass of electron increases or decreases depending on the potential of
positive ions
(d) The external field will only change the resistance, but mass of electron is not
affected

63 What is the effect of at very high temperature on N-type semiconductors? A

(a) Concentration of electrons and holes is almost equal due to ionization of

donor ions and it turns into intrinsic semiconductor
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 (b) Concentration of electrons is more and it becomes more negative
(c) More holes are created as electrons become free and it turns into P-type
semiconductor
(d) It turns more negative as more electrons will break the bonds and become free

64 What is the effect of at very high temperature on P-type semiconductors? A

(a) Concentration of electrons and holes is almost equal due to ionization of

donor ions and it turns into intrinsic semiconductor
(b) Concentration of holes is more and it becomes more positive
(c) More electrons are created and it turns into N-type semiconductor
(d) It turns more positive as more electrons will break the bonds and more holes
are created

65 What is the effect of very high temperature on N-type semiconductors? C

(a) Fermi level continue to increases as more electrons are free and conducting
(b) Fermi level continue to decreases as more electrons are free creating more
holes
(c) Fermi level becomes equal to its intrinsic Fermi level is concentration of holes
and electrons is balanced
(d) Fermi level is unbalanced and fluctuates rapidly

67 If the doping concentration of donor ions increased, what is the effect on Fermi energy B
of N-type semiconductor?

(a) Fermi level increase but always remain below the energy level of conduction
band
(b) Fermi level increases and merge into energy level of conduction band
(c) Fermi level increase and goes above the energy level of conduction band
(d) Fermi level is unbalanced and fluctuates rapidly

68 If the doping concentration of acceptor ions increased, what is the effect on Fermi B
energy of P-type semiconductor?

(a) Fermi level decreases but always remain above the energy level of valence
band
(b) Fermi level decreases and merge into energy level of valence band
(c) Fermi level decreases increase and goes down the energy level of valence
band
(d) Fermi level is unbalanced and fluctuates rapidly

69 What is true regarding drift current? D

(a) Drift current is caused because of unequal concentration of electrons within

the solid
(b) Drift current is caused because of unequal concentration of holes within the
solid
(c) Drift current is caused due to smooth flow of electrons within the solid
(d) Drift current is caused because of random motion of electrons with ions or
electrons

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70 What is true regarding diffusion? D

(a) Diffusion is caused because of random movement of electrons and holes

within the solid
(b) Diffusion is caused due removal of electrons in solid when power supply is
connected
(c) Diffusion is passing of electrons and holes through potential barrier
(d) Diffusion is caused because of unbalanced distribution of concentration of
electrons or holes within the solid

71 If the density of charge carriers is increased, the value of Hall coefficient A

(a) Decreases
(b) Increases
(c) Remains constant
(d) Changes the direction
72 If the current flowing through the semiconductor slab along its length, Hall voltage B
and electric field developed is due to accumulation of charge carriers

(a) Along opposite edges of its thickness

(b) Along opposite edges of its width
(c) Along opposite edges of its length
(d) Along the ends from where current enters
73 For silicon doped with trivalent impurity, C

(a) ne >> nh
(b) ne > nh
(c) nh >> ne
(d) nh > ne
74 The Fermi level in an n-type semiconductor at 00 K lies B

(a) Below the donor level.

(b) Half way between the bottom of conduction band and donor level.
(c) Exactly in the middle of hand gap.
(d) Half way between the top of valence band and the acceptor level.
75 If the Fermi energy of silver at 00 K is 5 electron volt, the mean energy of electron in D
silver at 00 K is

(a) 6 electron volt.

(b) 12 electron volt.
(c) 1.5 electron volt.
(d) 3 electron volt.

76 The probability of occupation of an energy level E, when E – EF = kT, is given by D

(a) 0.73
(b) 0.63
(c) 0.5
(d) 0.27

77 Which of the following elements is a covalently bonded crystal? C

(a) aluminium
(b) sodium chloride
(c) germanium
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 (d) lead

78 The Fermi level is D

(a) an average value of all available energy levels.
(b) an energy level at the top of the valence band.
(c) the highest occupied energy level at 0 0c.
(d) the highest occupied energy level at 0 0k.

79 Mobility of electron is C

(a) Average flow of electrons per unit field.

(b) Average applied field per unit drift velocity.
(c) Average drift velocity per unit field.
(d) Reciprocal of conductivity per unit charge.

80 Fermi level represents the energy level with probability of its occupation of C
(a) 0 %.
(b) 25 %.
(c) 50 %.
(d) 100 %.
81 Hall effect can be used to measure D
(a) Mobility of semiconductors.
(b) Conductivity of semiconductors.
(c) Resistivity of semiconductors.
(d) (d) all of these
82 The energy required to break a covalent bond in a semiconductor B
(a) is equal to 1 eV
(b) is equal to the width of the forbidden gap
(c) is greater in Ge than in Si
(d) is the same in Ge and Si
83 At absolute zero temperature, the probability of finding an electron at an energy level B
E is zero when
(a) E < EF
(b) E > Ef
(c) 2E E = f
(d) None

84 Electrical conductivity of insulators is in the range of _______. A

(a) 10-10(Ω-mm)-1
(b) 10-10(Ω-cm)-1
(c) 10-10(Ω-m)-1
(d) 10-8(Ω-m)-1

85 Units for electric field strength C

(a) A/cm2
(b) mho/meter
(c) cm2/V.s
(d) V/cm
86 Energy band gap size for semiconductors is in the range ________ eV. B
(a) 1-2
(b) 2-3
(c) 3-4
(d) > 4
87 Energy band gap size for insulators is in the range ________ eV. D
11
 (a) 1-2
(b) 2-3
(c) 3-4
(d) (d) > 4
88 Flow of electrons is affected by the following D
(a) Thermal vibrations
(b) Impurity atoms
(c) Crystal defects
(d) (d) all
89 Flow of electrons is affected by the following D
(a) Thermal vibrations
(b) Impurity atoms
(c) Crystal defects
(d) (d) all
90 Fermi energy level for p-type extrinsic semiconductors lies B
(a) At middle of the band gap
(b) Close to conduction band
(c) Close to valence band
(d) (d) None
91 Fermi energy level for n-type extrinsic semiconductors lies B
(a) At middle of the band gap
(b) Close to conduction band
(c) Close to valence band
(d) (d) None
92 Fermi energy level for intrinsic semiconductors lies C
(a) At middle of the band gap
(b) Close to conduction band
(c) Close to valence band
(d) (d) None
93 Not an example for intrinsic semiconductor A

(a) Si
(b) Al
(c) Ge
(d) (d) Sn
94 In intrinsic semiconductors, number of electrons __________ number of holes. C
(a) Equal
(b) Greater than
(c) Less than
(d) (d) Can not define
95 In p-type semiconductors, number of holes __________ number of electrons. A
(a) Equal
(b) Greater than
(c) Less than
(d) (d) Twice
96 Mobility of holes is ___________ mobility of electrons in intrinsic semiconductors. D
(a) Equal
(b) Greater than
(c) Less than
(d) (d) Can not define
97 Fermi level for extrinsic semiconductor depends on D

(a) Donor element

(b) Impurity concentration
12
 (c) Temperature
(d) (d) All
98 To measure light intensity we use C

(a) LED with forward bias

(b) LED with reverse bias
(c) photodiode with reverse bias
(d) (d) photodiode with forward bias
99 In integrated circuits, npn construction is preferred to pnp construction because B

(a) npn construction is cheaper

(b) to reduce diffusion constant, n-type collector is preferred
(c) npn construction permits higher packing of elements
(d) (d) p-type base is preferred
100 The photoelectric work function of a surface is 2.2 eV. The maximum kinetic energy D
of photo electrons emitted when light of wave length 6200 A.U. is incident on the
surface is
(a) 1.6 eV
(b) 1.4 eV
(c) 1.2 eV
(d) (d) Photo electrons are not emitted
101 A metallic surface is irradiated by monochromatic light of frequency ν1and stopping B
potential is found to be V1. If light of frequency ν2 irradiates the surface, the stopping
potential will be

(a) (a) V1 + (h/e) (ν1 + ν2)

(b) V1 + (h/e) (ν2 – ν1)
(c) V1 + (e/h) (ν2 – ν1)
(d) (d) V1 - (h/e) (ν1 + ν2)
102 The retarding potential required to stop the emission of photoelectrons when a B
photosensitive material of work function 1.2 eV is irradiated with ultraviolet rays of
wave length 2000 A.U. is

(a) 4V
(b) 5V
(c) 6V
(d) (d) 8V
103 The photoelectric effect is __________. D

(a) a relativistic effect

(b) the production of current by silicon solar cells when exposed to sunlight
(c) the total reflection of light by metals giving them their typical luster
(d) (d) the ejection of electrons by a metal when struck by lightens
104 Substances which allow electric current to pass through them are called A

(a) Conductors
(b) insulation
(c) semi conductors
(d) (d) none of the above

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105 A copper wire of length l and diameter d has potential difference V applied at its two D
ends. The drift velocity is vd. If the diameter of wire is made d/3, then drift velocity
becomes

(a) 9 vd
(b) vd / 9
(c) vd /3
(d) (d) vd.
106 The unit of electrical conductivity is A

(a) mho / metre

(b) mho / sq. m
(c) ohm / metre
(d) (d) ohm / sq. m.
107 All good conductors have high D

(a) resistance
(b) electrical conductivity
(c) electrical and thermal conductivity
(d) (d) conductance.
108 A silicon sample is uniformly doped with 1016 phosphorus atoms/cm3 and 2 × 1016 B
boron atoms/cm3. If all the dopants are fully ionized, the material is:

(a) n-type with carrier concentration of 3 × 1016/cm3

(b) p-type with carrier concentration of 1016/cm3A
(c) p-type with carrier concentration of 4 × 1016/cm3
(d) Intrinsic
109 Measurement of Hall coefficient enables the determination of: B

(a) Mobility of charge carriers

(b) Type of conductivity and concentration of charge carriers
(c) Temperature coefficient and thermal conductivity
(d) (d) None of the above
110 The probability that an electron in a metal occupies the Fermi-level, at any C
temperature (>0 K) is:

(a) 0
(b) 1
(c) 0.5
(d) (d) None of these
111 the conductivity of an intrinsic semiconductor is given by (symbols have the usual C
meanings):

(a) σi = eni2 (µn – µp)

(b) σi = eni (µn – µp)
(c) σi = eni (µn + µp)
(d) (d) none of the above
112 The Hall coefficient of sample (A) of a semiconductor is measured at room C
temperature. The Hall coefficient of (A) at room temperature is 4×10–4 m3 coulomb–1.
The carrier concentration in sample A at room temperature is:

(a) ~ 1021 m–3

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 (b) ~ 1020 m–3
(c) ~ 1022 m–3
(d) (d) None of the above
113 If the drift velocity of holes under a field gradient of 100v/m is 5m/s, the mobility (in A
the same SI units) is

(a) 0.05
(b) 0.55
(c) 500
(d) (d) 50
114 The Hall Effect voltage in intrinsic silicon is: C

(a) Positive
(b) Zero
(c) Negative
(d) None of the above
115 The Hall coefficient of an intrinsic semiconductor is: B

(a) Positive under all conditions

(b) Negative under all conditions
(c) Zero under all conditions
(d) (d) None of the above
116 Consider the following statements: pure germanium and pure silicon are examples of: A

1. Direct band-gap semiconductors

2. Indirect band-gap semiconductors
3. Degenerate semiconductors
which of these statements are true

(a) 1 alone is correct

(b) 2 alone is correct
(c) 3 alone is correct
(d) (d) None of the above
117 When ne and nh are electron and hole densities, and µe and µn are the carrier mobilities, B
the Hall coefficient is positive when
(a) nh µh > neµe
(b) nh µh2 > neµe2
(c) nhµh < neµh
(d) (d) None of the above
118 The electron and hole concentrations in a intrinsic semiconductor are ni and pi C
respectively. When doped with a p-type material, these change to n and p,
respectively. Then:
(a) n + p = ni + pi
(b) n + ni = p + pi
(c) np = nipi
(d) (d) None of the above
119 If the temperature of an extrinsic semiconductor is increased so that the intrinsic C
carrier concentration is doubled, then:

(a) The majority carrier density doubles

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 (b) The minority carrier density doubles
(c) Both majority and minority carrier densities double
(d) (d) None of the above
120 The mobility is given by (notations have their usual meaning): A

(a) µ = V0/E0
(b) µ = V02/E0
(c) µ = V0/E02
(d) None of the above
121 A sample of n-type semiconductor has electron density of 6.25 x 1018/cm3 at 300K. If B
the intrinsic concentration of carriers in this sample is 2.5 x 1013/cm3, at this
temperature, the hole density becomes:

(a) 1016/cm3
(b) 107/cm3
(c) 1017/cm3
(d) (d) None of the above
122 The intrinsic carrier density at 300K is 1.5 x 1010/cm3 in silicon. For n-type silicon D
doped to 2.25 x 1015 atoms/cm3, the equilibrium electron and hole densities are:

(a) n0 = 1.5 x 1016/cm3, p0 = 1.5 x 1012/cm3

(b) n0 = 1.5 x 1010/cm3, p0 = 2.25 x 1015/cm3
(c) n0 = 2.25 x 1017/cm3, p0 = 1.0 x 1014/cm3
(d) (d) None of the above

123 In a p-type silicon sample, the hole concentration is 2.25 x 1015/cm3. If the intrinsic D
carrier concentration 1.5 x 1010/cm3, the electron concentration is

(a) 1021/cm3
(b) 1010/cm3
(c) 1016/cm3
(d) (d) None of the above

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