UNISONIC TECHNOLOGIES CO.

, LTD
4N60 Power MOSFET

4A, 600V N-CHANNEL

POWER MOSFET
1 1

TO-220 TO-220F
„ DESCRIPTION
The UTC 4N60 is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually 1 1
used at high speed switching applications in power supplies, PWM
TO-220F1 TO-220F2
motor controls, high efficient DC to DC converters and bridge
circuits.
„ FEATURES
* RDS(ON) = 2.5Ω @VGS = 10 V
1 1
* Ultra Low Gate Charge ( typical 15 nC )
* Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) TO-252 TO-251
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness
„ SYMBOL
1 1

TO-262
TO-263

„ ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
4N60L-TA3-T 4N60G-TA3-T TO-220 G D S Tube
4N60L-TF1-T 4N60G-TF1-T TO-220F1 G D S Tube
4N60L-TF2-T 4N60G-TF2-T TO-220F2 G D S Tube
4N60L-TF3-T 4N60G-TF3-T TO-220F G D S Tube
4N60L-TM3-T 4N60G-TM3-T TO-251 G D S Tube
4N60L-TN3-R 4N60G-TN3-R TO-252 G D S Tape Reel
4N60L-TN3-T 4N60G-TN3-T TO-252 G D S Tube
4N60L-T2Q-T 4N60G-T2Q-T TO-262 G D S Tube
4N60L-TQ3-R 4N60G-TQ3-R TO-263 G D S Tape Reel
4N60L-TQ3-T 4N60G-TQ3-T TO-263 G D S Tube
Note: Pin Assignment: G: Gate D: Drain S: Source

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4N60 Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS ±30 V
Avalanche Current (Note 2) IAR 4.4 A
Continuous ID 4.0 A
Drain Current
Pulsed (Note 2) IDM 16 A
Single Pulsed 4N60 260 mJ
EAS
Avalanche Energy (Note 3) 4N60-E 200 mJ
Repetitive (Note 2) EAR 10.6 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns
TO-220/TO-262/TO-263 106
TO-220F/TO-220F1 36
Power Dissipation PD W
TO-220F2 38
TO-251/ TO-252 50
Junction Temperature TJ +150 °С
Operating Temperature TOPR -55 ~ +150 °С
Storage Temperature TSTG -55 ~ +150 °С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
„ THERMAL DATA
PARAMETER PACKAGE SYMBOL RATINGS UNIT
TO-220/TO-262/TO-263 62.5
TO-220F/TO-220F1 62.5
Junction to Ambient θJA °С/W
TO-220F2 62.5
TO-251/ TO-252 83
TO-220/TO-262/TO-263 1.18
TO-220F/TO-220F1 3.47
Junction to Case θJc °С/W
TO-220F2 3.28
TO-251/ TO-252 2.5

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4N60 Power MOSFET

„ ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 600 V
Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 10 μA
Forward VGS = 30V, VDS = 0V 100 nA
Gate-Source Leakage Current IGSS
Reverse VGS = -30V, VDS = 0V -100 nA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C 0.6 V/°С
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 2.2A 2.2 2.5 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 520 670 pF
VDS = 25V, VGS = 0V,
Output Capacitance COSS 70 90 pF
f = 1MHz
Reverse Transfer Capacitance CRSS 8 11 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) 13 35 ns
Turn-On Rise Time tR VDD = 300V, ID = 4.0A, 45 100 ns
Turn-Off Delay Time tD(OFF) RG = 25Ω (Note 1, 2) 25 60 ns
Turn-Off Fall Time tF 35 80 ns
Total Gate Charge QG 15 20 nC
VDS= 480V,ID= 4.0A,
Gate-Source Charge QGS 3.4 nC
VGS= 10V (Note 1, 2)
Gate-Drain Charge QGD 7.1 nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 4.4A 1.4 V
Maximum Continuous Drain-Source Diode
IS 4.4 A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM 17.6 A
Forward Current
Reverse Recovery Time trr VGS = 0 V, IS = 4.4A, 250 ns
Reverse Recovery Charge QRR dIF/dt = 100 A/μs (Note 1) 1.5 μC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature

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4N60 Power MOSFET

„ TEST CIRCUITS AND WAVEFORMS

D.U.T. +

VDS

- L

RG
Driver VDD
* dv/dt controlled by RG
Same Type * ISD controlled by pulse period
VGS as D.U.T. * D.U.T.-Device Under Test

Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS= 10V

IFM, Body Diode Forward Current

ISD
(D.U.T.)
di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

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4N60 Power MOSFET

„ TEST CIRCUITS AND WAVEFORMS (Cont.)

VDS
90%

10%
VGS
tD(ON) tD(OFF)
tR tF

Switching Test Circuit Switching Waveforms

VGS

QG
10V

QGS QGD

Charge

Gate Charge Test Circuit Gate Charge Waveform

BVDSS
IAS

ID(t)
VDS(t)
VDD

tp Time

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

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4N60 Power MOSFET

„ TYPICAL CHARACTERISTICS
Drain-Source Breakdown Voltage,

Drain-Source On-Resistance,
RDS(ON) (Normalized) (Ω)
BVDSS (Normalized) (V)

On-State Characteristics Transfer Characteristics

VGS
10 Top: 10V 10
9V
8V
7V
6V
5.5V 25°С
5 V Bottorm:5.0V

1 5.0V
150°С
1

0.1
Notes:
Notes:
1. 250µs Pulse Test
1. VDS=50V
2. TC=25°С 2. 250µs Pulse Test
0.1
0.1 1 10 2 4 6 8 10
Drain-to-Source Voltage, VDS (V) Gate-Source Voltage, VGS (V)

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4N60 Power MOSFET

„ TYPICAL CHARACTERISTICS(Cont.)

Capacitance Characteristics Gate Charge Characteristics

(Non-Repetitive)
12
1200 Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds+Cgd Crss=Cgd
10
1000 VDS=300V
Ciss
8 VDS=480V
800
Notes: VDS=120V
Coss 1. VGS=0V 6
600
2. f = 1MHz
400 4

200 2
Crss
Note: ID=4A
0 0
0.1 1 10 0 5 10 15 20 25

Drain-SourceVoltage, VDS (V) Total Gate Charge, QG (nC)

Thermal Response, θJC (t)

PD (w)

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4N60 Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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