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Post Lab Report 05 (2019-2-80-011)

1. The student measured parameters and output characteristics of an N-channel MOSFET using PSpice simulation. 2. Key parameters extracted from simulation include a threshold voltage of 1.823V and process transconductance of 100.74 uA/V^2. 3. Output curves were generated by sweeping the gate voltage and recording drain current and saturation drain voltage.

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Mohammad Fahim Nur
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56 views5 pages

Post Lab Report 05 (2019-2-80-011)

1. The student measured parameters and output characteristics of an N-channel MOSFET using PSpice simulation. 2. Key parameters extracted from simulation include a threshold voltage of 1.823V and process transconductance of 100.74 uA/V^2. 3. Output curves were generated by sweeping the gate voltage and recording drain current and saturation drain voltage.

Uploaded by

Mohammad Fahim Nur
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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DEPARTMENT OF ELECTRICAL & ELECTRONIC ENGINEERING

POST LAB REPORT

Course Name : Electrical circuits 1


Course No : EEE 102
Section No : 01
Experiment No : 05
Experiment Name : Parameters and I-V characteristics measurement of an
N-channel MOSFET.
Student’s Name & ID : Foysal Mohammad Fahim : 2019-2-80-011

Submitted To : A A Ferdous sir

Performance Date : 28-03-2021


Submission Date : 04-04-2021
OBJECTIVE: The objective of this experiment is to measure the parameters, namely the
threshold voltage, Vt and the process transconductance kn(W/L), and the output characteristics
(ID vs. VDS) of an N-channel enhancement MOSFET.

CIRCUIT DIAGRAMS:

Fig. 01

Fig. 02
QUESTION ANSWERS:

1. The ID-VDS curves from Pspice simulation window


600uA

(3.0082,510.108u)

400uA

(2.0082,240.026u)

200uA

(1.0000,69.892u)

0A
0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V
ID(M1)
VD(M1)

Fig.03

2. The value of threshold voltage that I input to the model is 1.8 volt.

3. The value of threshold voltage that I obtained from simulation is 1.823 volt.

4. The value of process transconductance that I input to the model is 100uA/V2.

5. The value of process transconductance that I obtained from simulation is


100.74 uA/V2.

6. The values of VDS_sat obtained my simulation,

VGG(V) VDS_sat (V)


3 1.0000
4 2.0082
5 3.0082

I was not able to calculate other value


7. Calculating the VDS_sat = VGS – VT
At 3V,

VDS_sat = (3-1.8)= 1.2 V

At 4V,

VDS_sat = (4-1.8)= 2.2 V

At 5V,

VDS_sat = (5-1.8)= 3.2 V

VDS_sat (from simulation) VDS_sat (from calculation)

1.0000 V 1.2 V

2.0082 V 2.2 V

3.0082 V 3.2 V

Comment: There is little bit difference between simulation and calculation values which
is avoidable.

8. Now,
2𝐼𝐷
gm=
(𝑉𝐺𝑆−𝑉𝑇)

At 3V,
2𝐼𝐷
gm= = (2×72×10-3)/(3-1.8) = 0.12 mA/V.
(𝑉𝐺𝑆−𝑉𝑇)

At 4V,
2𝐼𝐷
gm= = (2×242×10-3)/(4-1.8) = 0.22 mA/V.
(𝑉𝐺𝑆−𝑉𝑇)

At 5V,
2𝐼𝐷
gm= = (2×512×10-3)/(5-1.8) = 0.32 mA/V.
(𝑉𝐺𝑆−𝑉𝑇)
Discussion: From This Experiment we have learned about the Parameters and I-
V characteristics measurement of an N-channel MOSFET. Since this a crucial
situation for everyone ,so that we are performing this experiments via online
platforms. To do this experiments :
--- We need to be carefull while performing in the pspise window.
--- We have to take all the readings carefully.
--- We need to be carefull about the calculations.

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