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Bataan Peninsula State University - Main Campus College of Engineering and Architecture

The document provides specifications for designing an amplifier circuit using a JFET. It gives the internal capacitances of the FET as well as the desired frequency range of 500 Hz to 2 kHz. Calculations are shown to determine the drain current, transconductance, voltage gain, and high and low frequency responses. The amplifier is designed to have a voltage gain of -5.12 V with a low frequency cutoff of 9.65 Hz and a high frequency cutoff of 2 kHz.

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RAF REYKOONS SIMBUL
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75 views

Bataan Peninsula State University - Main Campus College of Engineering and Architecture

The document provides specifications for designing an amplifier circuit using a JFET. It gives the internal capacitances of the FET as well as the desired frequency range of 500 Hz to 2 kHz. Calculations are shown to determine the drain current, transconductance, voltage gain, and high and low frequency responses. The amplifier is designed to have a voltage gain of -5.12 V with a low frequency cutoff of 9.65 Hz and a high frequency cutoff of 2 kHz.

Uploaded by

RAF REYKOONS SIMBUL
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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BATAAN PENINSULA STATE UNIVERSITY – MAIN CAMPUS

COLLEGE OF ENGINEERING AND ARCHITECTURE

ECEC – 0224
FINAL REQUIREMENT

SIMBUL, RAF REYKOONS T.


BSECE2B

ENGR. ANGELO RODRIGUEZ


INSTRUCTOR

JUNE 20,2021
In reference to the problem and specification assigned to you in the midterm examination,
design the amplifier in such that it will accept the frequency range of 500 hz to 2 khz only.
Consider Rsig = 300 ohms and the following internal capacitances of the FET.
1. CWi = 2 pF
2. CWo = 3pF 

Vg-Vgs-IdRs=0

Vgs=Vg-IdRs

R2
Vg= xVDD
R 1+ R 2
10 MΩ
= x 24 V
90 M Ω+10 M Ω
Vg=2.4V

2
Vgs
(
Id= Idss 1−
Vp )
2
( 2.4−480 Id )
=44 1−( −8 V )
=44 ( 1+ 0.3−60 Id )2
=44 ( 1.3−60 Id )2

=44 (1.69−156 Id + 3.6 I d 2)

Id=73.36 mA −6.86 Id + 158.4 I d 2

•158.4 I d2 −7.86 Id + 74.36 mA=0

Id1=49.61 mA Id2=9.46 mA

FOR ID1:

Vgs=Vg−480 Id=2.4−480(49.61)

=-21.4V

FOR ID2:

Vgs=Vg−480 Id=2.4−480(9.46)

=-2.14V

2 Idss Vgs 2 ( 44 ) (−2.14 )


gM=
Vp (
1−
Vp
= ) 8
(1−
(−8 )
)

gM=8.06ms

−1
Av=−gM ( RD /¿ RL ) =−8.06 ( 1.5−1 +1.1−1 )

Av=-5.12

FET LOW FREQUENCY RESPONSE:

Cd=10µ Cs=40µF Cwi=2pF

Cg=7µF Rsig=30Ω Cwo=3pF

1 1
flc= = =9.65 Hz
2 π ( RD+ RL ) Cd 2 π ( 1.5+1.1 )( 10 )
1 1
fls= = =40.38 Hz
2 πReqCs 2 π ( 98.54 ) ( 40 )

Req= RS/¿ 1/ gM =480 /¿ 1/8.06=480 /¿124

=98.54Hz

1 1
flg= = =7.36 Hz
2 π ( Rsig+ Ri ) Cg 2 π ( 300+9 ) ( 7 )

Ri= Rg=R 1/¿ R 2=10/¿ 90=9 MΩ

FET HIGH FREQUENCY RESPONSE:

GIVEN:
Id=9.46mA gM=8.06ms

Vgs=-2.14V Av=-5.12V

Rin= R 1/¿ R 2 /¿ Rsig=10 /¿ 90 /¿300=8.74 MΩ

1 1
fcl(in)= = =500 Hz
2 πRinCi 2 π ( 8.74 )( 36.42 )

1 1
Ci= = =36.42
2 πRinfcl ( ¿ ) 2 π ( 8.74 )( 500 )

1 1
fcl(out)= = =500 Hz
2 π ( RD+ RL ) C 3 2 π ( 1.5+ 1.1 )( 12.24 )
1 1
C3= = =12.24 nF
2 π ( RD+ RL ) fcl ( out ) 2 π ( 1.5+ 1.1 ) 500 Hz

Cgs=1pF Cds=0.01pF Cgd=0.5pF

1 1
fhi= = =2 KHz
2 πRTH 1 Ci 2 π ( 8.74 )( 9.12 )

RTH1= R 1/¿ R 2 /¿ Rsig=10 /¿ 90 /¿300=8.74 MΩ

Ci=Cwi+Cgs+Cmi=2 pF+1 pF+ ( 1−Av ) Cgd

=3 pF+6.12=9.12
1 1
fho= = =2.8 KHz
2 πRTH 2 Co 2 π ( 0.63 )( 9,04 )

RTH2= RD /¿ RL=1.5 /¿1.1=0.63 KΩ

Co=Cwo+ Cds+Cmo=3 pF +0.01+ 1− ( 51 ) 0.5 pF


=9.04

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