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Silicon NPN Power Transistors: Quality Semi-Conductors

This document provides specifications for the 2N6688 silicon NPN power transistor. It has a TO-3 package, fast switching speed, and low collector saturation voltage. It is suitable for power supplies and other high-voltage switching applications. The document lists maximum ratings, thermal characteristics, pin descriptions, and electrical characteristics including current gain, cutoff currents, and transition frequency.

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74 views

Silicon NPN Power Transistors: Quality Semi-Conductors

This document provides specifications for the 2N6688 silicon NPN power transistor. It has a TO-3 package, fast switching speed, and low collector saturation voltage. It is suitable for power supplies and other high-voltage switching applications. The document lists maximum ratings, thermal characteristics, pin descriptions, and electrical characteristics including current gain, cutoff currents, and transition frequency.

Uploaded by

jjtrivedi8717
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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20 STERN AVE. TELEPHONE: (973) 376-2922


SPRINGFIELD. NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960
Silicon NPN Power Transistors 2N6688

DESCRIPTION
•With TO-3 package
•Fast switching speed
•Low collector saturation voltage

APPLICATIONS
•For power supplies and other high-voltage
switching applications

PINNING

PIN DESCRIPTION

1 Base

2 Emitter
Fig.1 simplified outline (TO-3) and symbol
3 Collector

Absolute maximum ratings(Ta=n)

SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 300 V

VCEO Collector-emitter voltage Open base 200 V

VEBO Emitter-base voltage Open collector 8 V

lo Collector current 20 A

ICM Collector current-peak 50 A

IB Base current 8 A

PC Collector power dissipation TC=25L 200 W

T| Junction temperature 200 i_

Tstg Storage temperature -65-200 L

THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT

Rthj-c Thermal resistance junction to case 0.875 L/W

NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Downloaded from: http://www.datasheetcatalog.com/
Silicon NPN Power Transistors 2N6688

CHARACTERISTICS
Tj=25G unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VcEO(SUS) Collector-emitter sustaining voltage lc=0.2A ;IB=0 200 V

VcEsat Collector-emitter saturation voltage lc=20A; IB=2A 1.5 V

VsEsat Base-emitter saturation voltage lc=20A; IB=2A 1.8 V

ICEV Collector cut-off current VCE=300V; VBE=-1 -5V 50 MA

IEBO Emitter cut-off current VEB=8V; lc=0 100 MA

hpE-1 DC current gain lc=1A;V CE =2V 25

hpE-2 DC current gain lc=10A;VCE=2V 20 80

HpE-3 DC current gain lc=20A ; VcE=2V 15

fr Transition frequency lc=1A;VGE=10V 20 100 MHz

3.84-4.21

LU 22.22/efMAX
CO CO
S5CD i
O
\ , 1 j I CD
^-16.89H X
1 CD
-29.90-30.40- h- rri
-40.13MAX— o
p
0.966-1.092 o7
0
CO 06
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

Downloaded from: http://www.datasheetcatalog.com/


This datasheet has been downloaded from:

www.DatasheetCatalog.com

Datasheets for electronic components.

Downloaded from: http://www.datasheetcatalog.com/

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