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Section 4 - 8 The MOSFET High Frequency Model Lecture

The document discusses the MOSFET high frequency model and unity gain frequency. It explains that MOSFETs have internal parasitic capacitances that limit amplifier bandwidth. The high frequency MOSFET small signal model combines these internal capacitances. The unity gain frequency ωT is the frequency where the short circuit current gain is equal to one. It is calculated as ωT = gm / (Cgs + Cgd), where gm is the transconductance and Cgs and Cgd are the gate-source and gate-drain capacitances. A higher unity gain frequency indicates better high frequency performance for a MOSFET.

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Pina Nasa
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395 views

Section 4 - 8 The MOSFET High Frequency Model Lecture

The document discusses the MOSFET high frequency model and unity gain frequency. It explains that MOSFETs have internal parasitic capacitances that limit amplifier bandwidth. The high frequency MOSFET small signal model combines these internal capacitances. The unity gain frequency ωT is the frequency where the short circuit current gain is equal to one. It is calculated as ωT = gm / (Cgs + Cgd), where gm is the transconductance and Cgs and Cgd are the gate-source and gate-drain capacitances. A higher unity gain frequency indicates better high frequency performance for a MOSFET.

Uploaded by

Pina Nasa
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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5/4/2011 section 4_8 The MOSFET High Frequency Model 1/1

4.8 The MOSFET Internal


Capacitances and
High-Frequency Model
Reading Assignment: pp. 320-325

Like the BJT, MOSFETs have internal parasitic


capacitances that will ultimately limit amplifier
bandwidth.

HO: The MOSFET High-Frequency Model

A measure of a MOSFETs “bandwith” is its unity gain


frequency.

HO: MOSFET Unity Gain Frequency

Jim Stiles The Univ. of Kansas Dept. of EECS


5/4/2011 The MOSFET High Frequency Small Signal Model 1/1

The MOSFET
High-Frequency
Small-Signal Model
Combine the internal capacitances in a modified MOSFET small-
signal model. id (ω )
G gi (ω )
C gd D
+ gmv gs
vgs ro
C gs +
- vds
-
is (ω )
S
* Therefore use this model to construct small-signal circuit
when vi is operating at high frequency.

* Note since , all currents and voltages will be dependent on


operating frequency ω.

* Note that at high frequencies, the gate current is non-zero


(i.e., i g (ω ) ≠ 0 )!!! Therefore, id (ω ) ≠ is (ω ) .

* Note at low-frequencies, the model reverts to the original


MOSFET small-signal model.
5/4/2011 The MOSFET Unity Gain Frequency 1/2

The MOSFET Unity


Gain Frequency
Consider the short-circuit current gain of the high-frequency
MOSFET small-signal model:
ios (ω )
G
ii (ω ) D
C gd +
+
vi (ω ) vds ro
+
vgs C gs
gmv gs
_
- -
S S

Note that because of the output short, vd = vs , so that


vi = v gs = v gd .

Therefore:
ios (ω ) = gm v gs (ω ) − jωC gd v gd (ω )
= gm v gs (ω ) − jωC gd v gs (ω )
= ( gm − jωC gd )vi (ω )
and
ii (ω ) = jωC gs v gs (ω ) + jωC gd v gd (ω )
= jωC gs v gs (ω ) + jωC gd v gs (ω )
= jω ( C gs + C gd ) vi (ω )
5/4/2011 The MOSFET Unity Gain Frequency 2/2

The short-circuit current gain of the MOSFET is thus:

ios ( gm − jωC gd )vi (ω )


=
ii jω (C gs + C gd ) vi (ω )
( gm − jωC gd )
=
jω ( C gs + C gd )
gm
≈
jω ( C gs + C gd )

Note that this is not a low-pass function! Therefore, there is


no “break” frequency associated with this frequency response.

However, there is a “unity gain” frequency ωT —it’s the


frequency where the short-circuit current gain is equal to one:

ios (ω = ωT ) gm
=1=
ii (ω = ωT ) ωT (C gs + C gd )

Therefore we find that the unity-gain frequency of a MOSFET


is:
gm
ωT =
C gs + C gd

Note as the capacitances get smaller, the unity gain frequency


gets larger. The unity gain frequency is a MOSFET device
parameter—the larger the value, the better the MOSFET high
frequency performance.

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