FDS8884 N-Channel PowerTrench® MOSFET

FDS8884
N-Channel PowerTrench® MOSFET
30V, 8.5A, 23mΩ
General Descriptions Features
This N-Channel MOSFET has been designed specifically „ Max rDS(on) = 23mΩ at VGS = 10V, ID = 8.5A
to improve the overall efficiency of DC/DC converters using
„ Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.5A
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low „ Low gate charge
rDS(on) and fast switching speed.
REE I „ 100% RG Tested
DF
A
MP
LE

„ RoHS Compliant
LE
M ENTATIO
N

D
D 5 4
D
D 6 3

7 2
G
S 8 1
S
SO-8 S

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter Ratings Units
VDS Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±20 V
Drain Current Continuous (Note 1a) 8.5 A
ID
Pulsed 40 A
EAS Single Pulse Avalanche Energy (Note 2) 32 mJ
Power dissipation 2.5 W
PD
Derate above 25oC 20 mW/oC
o
TJ, TSTG Operating and Storage Temperature -55 to 150 C

Thermal Characteristics
oC/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50
o
RθJA Thermal Resistance, Junction to Case (Note 1) 25 C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FDS8884 FDS8884 SO-8 330mm 12mm 2500 units

©2006 Semiconductor Components Industries, LLC. 1 Publication Order Number:

October-2017, Rev. 1 FDS8884/D
 FDS8884 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 V
∆BVDSS Breakdown Voltage Temperature ID = 250µA, referenced to
23 mV/oC
∆ TJ Coefficient 25oC
VDS = 24V 1
IDSS Zero Gate Voltage Drain Current µA
VGS = 0V TJ = 125oC 250
IGSS Gate to Source Leakage Current VGS = ±20V ±100 nA

On Characteristics (Note 3)
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 1.7 2.5 V
∆VGS(th) Gate to Source Threshold Voltage ID = 250µA, referenced to
-4.9 mV/oC
∆ TJ Temperature Coefficient 25oC
VGS = 10V, ID = 8.5A, 19 23
VGS = 4.5V , ID = 7.5A, 23 30
rDS(on) Drain to Source On Resistance mΩ
VGS = 10V, ID = 8.5A,
26 32
TJ = 125oC

Dynamic Characteristics
Ciss Input Capacitance 475 635 pF
VDS = 15V, VGS = 0V,
Coss Output Capacitance 100 135 pF
f = 1MHz
Crss Reverse Transfer Capacitance 65 100 pF
RG Gate Resistance f = 1MHz 0.9 1.6 Ω

Switching Characteristics (Note 3)

td(on) Turn-On Delay Time 5 10 ns
VDD = 15V, ID = 8.5A
tr Rise Time 9 18 ns
VGS = 10V, RGS = 33Ω
td(off) Turn-Off Delay Time 42 68 ns
tf Fall Time 21 34 ns
VDS = 15V, VGS = 10V
Qg Total Gate Charge 9.2 13 nC
ID = 8.5A
Qg Total Gate Charge VDS = 15V, VGS = 5V 5.0 7 nC
Qgs Gate to Source Gate Charge ID = 8.5A 1.5 nC
Qgd Gate to Drain Charge 2.0 nC

Drain-Source Diode Characteristics

ISD = 8.5A 0.9 1.25 V
VSD Source to Drain Diode Voltage
ISD = 2.1A 0.8 1.0 V
trr Reverse Recovery Time IF = 8.5A, di/dt = 100A/µs 33 ns
Qrr Reverse Recovery Charge 20 nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.

a) 50°C/W when b) 105°C/W when c) 125°C/W when

mounted on a 1 in2 mounted on a .04 in2 mounted on a
pad of 2 oz copper pad of 2 oz copper minimun pad

Scale 1 : 1 on letter size paper

2: Starting TJ = 25°C, L = 1mH, IAS = 8A, VDD = 27V, VGS = 10V.

3: Pulse Test:Pulse Width <300µs, Duty Cycle <2%.

www.onsemi.com
2
 FDS8884 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted

40 3.0

DRAIN TO SOURCE ON-RESISTANCE

PULSE DURATION = 80µs PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX DUTY CYCLE = 0.5%MAX
VGS = 3V
ID, DRAIN CURRENT (A)

VGS = 10V 2.5

30
VGS = 5.0V VGS = 3.5V

NORMALIZED
VGS = 3.5V 2.0
VGS = 4.5V VGS = 4V
20 VGS = 4.5V
VGS = 4.0V 1.5

10 VGS = 3V
1.0
VGS = 5V VGS = 10V

0 0.5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5 10 15 20 25 30 35 40
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A)

Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain

current and Gate Voltage

1.6 60
DRAIN TO SOURCE ON-RESISTANCE

ID = 8.5A ID = 8.5A PULSE DURATION = 80µs

VGS = 10V 55
DUTY CYCLE = 0.5%MAX
rDS(ON), DRAIN TO SOURCE

1.4
ON-RESISTANCE (mΩ)

50
45
NORMALIZED

1.2
40

1.0 35 TJ = 150oC
30
0.8 25
20 TJ = 25oC
0.6 15
-80 -40 0 40 80 120 160 2 4 6 8 10
TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance vs Junction Figure 4. On-Resistance vs Gate to Source

Temperature Voltage

40 40
PULSE DURATION = 80µs VGS = 0V
IS, REVERSE DRAIN CURRENT (A)

35 DUTY CYCLE = 0.5%MAX 10

ID, DRAIN CURRENT (A)

30
VDD = 5V TJ = 25oC TA = 150oC
1 TJ = 25oC
25

20
0.1
15 TJ = -55oC
TJ = 150oC
10 0.01
5 TJ = -55oC

0 1E-3
1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage

vs Source Current

www.onsemi.com
3
Typical Characteristics TJ = 25°C unless otherwise noted

FDS8884 N-Channel PowerTrench® MOSFET

VGS, GATE TO SOURCE VOLTAGE(V) 10 700

600
8 Ciss

CAPACITANCE (pF)
VDD = 15V 500
VDD = 10V f = 1MHz
6 VGS = 0V
400

4 VDD = 20V
300
Coss
200
2
100 Crss

0
0 2 4 6 8 10 0.1 1 10 30
Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage

20 9
IAS, AVALANCHE CURRENT(A)

8
VGS = 10V
10 ID, DRAIN CURRENT (A) 7
6
STARTING TJ = 25oC
5 VGS = 4.5V

4
3
STARTING TJ = 125oC
2
1 RθJA = 50oC/W
1 0
0.01 0.1 1 10 20 25 50 75 100 125 150
tAV, TIME IN AVALANCHE(ms)
TA, AMBIENT TEMPERATURE(oC)

Figure 9. Unclamped Inductive Switching Figure 10. Maximum Continuous Drain Current vs
Capability Ambient Temperature

100 2000
P(PK), PEAK TRANSIENT POWER (W)

TA = 25oC
1000
10us FOR TEMPERATURES
ID, DRAIN CURRENT (A)

ABOVE 25oC DERATE PEAK

10 CURRENT AS FOLLOWS:
100us 150 – T
A
I = I25 ------------------------
100 125
VGS=10V
1 1ms

OPERATION IN THIS 10ms

AREA MAY BE
LIMITED BY rDS(on) 100ms 10
0.1
SINGLE PULSE 1s
TJ = MAX RATED
o DC SINGLE PULSE
TA = 25 C
0.01 1
0.1 1 10 100 10
-5
10
-4
10
-3
10
-2
10 10
-1 0
10
1
10
2

VDS, DRAIN TO SOURCE VOLTAGE (V) t, PULSE WIDTH (s)

Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power
Dissipation

www.onsemi.com
4
 FDS8884 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted

2
1 DUTY CYCLE-DESCENDING ORDER

D = 0.5
NORMALIZED THERMAL

0.2
IMPEDANCE, ZθJA

0.1
0.1 0.05
0.02 PDM
0.01

t1
0.01
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
1E-3
-5 -4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10 10
t, RECTANGULAR PULSE DURATION(s)
Figure 13. Transient Thermal Response Curve

www.onsemi.com
5
 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local
Email: [email protected] Phone: 81−3−5817−1050 Sales Representative

❖ © Semiconductor Components Industries, LLC www.onsemi.com